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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Multimodal characterization of solution-processed Cu3SbS4 absorbers for thin film solar cells

The most efficient inorganic thin film chalcogenide-based solar cells use CdTe or CuInGaSe2 (CIGS) as absorber layers, which rely on toxic (Cd) and/or scarce elements (In, Te). The desire for more sustainable solar cells has led to the development of Earth abundant and non-hazardous chalcogenide absorbers. Cu3SbS4 (famatinite) is a promising Earth abundant p-type semiconductor that has a low direct band gap (0.9–1.05 eV), is a superabsorber (absorption coefficient 104–105 cm1), and has potential in low-cost, thin-film solar cells. Although these properties make the Cu3SbS4 phase stand out as a promising material for photovoltaics, to date Cu3SbS4 solar cells have only achieved low efficiencies. In this study, we demonstrate a method for synthesizing Cu3SbS4 nanocrystals and formation of thin-films by coating nanocrystal precursors onto substrates. Optical, structural, and chemical state characterization were performed before and after thermal processing of the Cu3SbS4 films. A detailed experimental analysis of the bulk and surfaces of the Cu3SbS4 absorber films indicate that phase stability and preferential copper oxidation at the surface may limit device performance for Cu3SbS4 based solar cells. These findings may provide significant insight on how to improve Cu3SbS4 based solar cell performance by controlling processing conditions. This research was funded by the United States National Science Foundation – Scalable Nanomanufacturing program (Grant CBET-1449383). A portion of this research was performed at the Northwest Nanotechnology Infrastructure, a member of the National Nanotechnology Coordinated Infrastructure, which is supported by the National Science Foundation (Grant ECCS- 1542101). The acquisition of the OSU Titan TEM was supported by the National Science Foundation via the Major Research Instrumentation (MRI) program under Grant No. 1040588, the Murdock Charitable Trust, and the Oregon Nanoscience and Microtechnologies Institute (ONAMI). XANES spectra were obtained through an approved program user proposal at the Advanced Light Source, which is a DOE Office of Science User Facility under contract no. DE-AC02-05CH11231. The ALS approved program user proposal beam time was obtained through the chemical imaging initiative, an LDRD program at PNNL. We acknowledge Trey Diulus and Dr Igor Lyubinetsky for their assistance with the XPS experiments.

Albuquerque, Gustavo H.↗
DOE OSTI2014

Solution processed nickel oxide anodes for organic photovoltaic devices

Nickel oxide thin films have been prepared from a nickel acetylacetonate (Ni(acac)) precursor for use in bulk heterojunction organic photovoltaic devices. The conversion of Ni(acac) to NiO{sub x} has been investigated. Oxygen plasma treatment of the NiO layer after annealing at 400 °C affords solar cell efficiencies of 5.2%. Photoelectron spectroscopy shows that high temperature annealing converts the Ni(acac) to a reduced form of nickel oxide. Additional oxygen plasma treatment further oxidizes the surface layers and deepens the NiO work function from 4.7 eV for the annealed film, to 5.0 eV allowing for efficient hole extraction at the organic interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Solution-processed amorphous silicon surface passivation layers

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8 mol. % of boron concentration demonstrated field-effect mobility value of 1.2 cm{sup 2} V{sup −1} s{sup −1} and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Nanoscale current spreading analysis in solution-processed graphene oxide/silver nanowire transparent electrodes via conductive atomic force microscopy

We use conductive atomic force microscopy (CAFM) to study the origin of long-range conductivity in model transparent conductive electrodes composed of networks of reduced graphene oxide (rGO{sub X}) and silver nanowires (AgNWs), with nanoscale spatial resolution. Pristine networks of rGO{sub X} (1–3 monolayers-thick) and AgNWs exhibit sheet resistances of ∼100–1000 kΩ/□ and 100–900 Ω/□, respectively. When the materials are deposited sequentially to form bilayer rGO{sub X}/AgNW electrodes and thermally annealed at 200 °C, the sheet resistance reduces by up to 36% as compared to pristine AgNW networks. CAFM was used to analyze the current spreading in both systems in order to identify the nanoscale phenomena responsible for this effect. For rGO{sub X} networks, the low intra-flake conductivity and the inter-flake contact resistance is found to dominate the macroscopic sheet resistance, while for AgNW networks the latter is determined by the density of the inter-AgNW junctions and their associated resistance. In the case of the bilayer rGO{sub X}/AgNWs' networks, rGO{sub X} flakes are found to form conductive “bridges” between AgNWs. We show that these additional nanoscopic electrical connections are responsible for the enhanced macroscopic conductivity of the bilayer rGO{sub X}/AgNW electrodes. Finally, the critical role of thermal annealing on the formation of these nanoscopic connections is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Nanosecond carrier lifetimes in solution-processed enargite (Cu 3 AsS 4 ) thin films

Enargite (ENG) Cu 3 AsS 4 is a promising material for photovoltaic applications due to its constituent earth abundant elements of differing ionic radii, ideal predicted optoelectronic properties, and demonstrated use in a working thin-film solar cell. However, little is known about ENG's defect properties; such knowledge is necessary to assess its potential for future use in high-efficiency devices. One indicator of a material's quality is its photogenerated carrier lifetime, which can be related to its bulk defect properties. Here, we use a combination of time-resolved terahertz spectroscopy and time-resolved photoluminescence to assess carrier dynamics in ENG thin films processed from nanoparticle precursors. The Shockley–Read–Hall (SRH) lifetimes are on the multi-nanosecond scale, which exceed those reported in more mature systems and represent promising values for a candidate photovoltaic material. These results suggest that ENG is worthy of further research and development effort with an eye toward future photovoltaic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

3ω techniques for measurement of volumetric heat capacity and anisotropic thermal conductivity of a solution processable, hybrid organic/inorganic film, Te-PEDOT:PSS

We report that measuring the thermal properties of anisotropic films of hybrid materials poses a challenge to existing metrology techniques. We have developed a new approach for measuring the volumetric heat capacity and anisotropic thermal conductivity of these systems using the 3ω method. While there exist many avenues for measuring the thermal properties of thin films, most carry with them difficult requirements such as smooth surfaces or advanced lithography. Here, we present measurements of a film's in-plane and cross-plane conductance and its volumetric heat capacity using relatively simple sample configurations, each requiring a single heater. For the measurement of volumetric heat capacity, we present a new model fitting method, relying on a standard film-on-substrate configuration. For the measurement of in-plane thermal conductance by 3ω, we have developed the use of an embedded micro-wire heater in suspended drop cast films, allowing for a 12 μm wide heater without the need for advanced lithography. We also expose the surprisingly significant effect of thermal radiation in the suspended film measurement and its associated error. Our measurements reveal a large anisotropy in the thermal conductivity of our test material, Te-PEDOT:PSS, of k in-plane / k cross-plane = 19, consistent with the nanoscale morphology of the material.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Delineating magnetization dynamics in solution-processed doped yttrium iron garnet thin films

Here, in this work, thin films of ruthenium-doped and cerium-doped yttrium iron garnet were deposited on silicon using solgel chemistry. Doped YIG could be produced in phase pure form up to a precursor stoichiometry of Y 3 Ru 0.1 Fe 4.9 O 12 and Ce 0.7 Y 2.3 Fe 5 O 12 . Both dopants significantly increase the coercivity and anisotropy field of the materials either due to domain wall pinning or increased spin–orbit coupling from the dopant. To delineate these two effects, the dynamic magnetic properties were studied using strip line ferromagnetic resonance (FMR). The FMR linewidth was separated into intrinsic loss and inhomogeneous line broadening. Inhomogeneous line broadening was found to dominate the magnetic losses in all the films likely due to magnon scattering off grain boundaries, but the Gilbert damping remained fairly low. By comparing the two dopants, it was found that Gilbert damping increased more in Ce:YIG films than in Ru:YIG films. This finding was corroborated by changes in the anisotropy field of the films, indicating a larger contribution from spin–orbit coupling from cerium than from ruthenium. Surprisingly, while magnetic loss globally increased with higher substitution, adding a small amount of dopant actually reduced the inhomogeneous line broadening in both sets of films. This was corroborated by crystallite size. The damping in Ru:YIG also decreased with a small amount of the dopant, which has been predicted by Kittel for doped garnets. Thus, it follows that there is an ideal doping regime where solgel YIG can be doped at low levels without increasing magnetic loss.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe 2 SiS 4 and Fe 2 GeS 4 Photovoltaics

Fe 2 SiS 4 and Fe 2 GeS 4 crystalline materials posses direct bandgaps of ~1.55 and ~1.4 eV respectively and an absorption coefficient larger than 10^5 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe 2 SiS 4 or Fe 2 GeS 4 have been reported to date. In the presented work, nanoprecursors to Fe 2 SiS 4 and Fe 2 GeS 4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Fe 2 SiS 4 and Fe 2 GeS 4 . Fabricating of ultra-thin-film photovoltaic devices utilizing Fe 2 SiS 4 and Fe 2 GeS 4 as solar absorber material is presented.

14 SOLAR ENERGY↗
DOE OSTI2017

Non-Invasive Acoustic-Based Monitoring of Heavy Water and Uranium Process Solutions

This presentation includes slides on Project Goals; Heavy Water Production Monitoring: A New Challenge for the IAEA; Noninvasive Measurements in SFAI Cell; Large Scatter in Literature Values; Large Scatter in Literature Values; Highest Precision Sound Speed Data Available: New Standard in H/D; ~400 pts of data; Noninvasive Measurements in SFAI Cell; New funding from NA241 SGTech; Uranium Solution Monitoring: Inspired by IAEA Challenge in Kazakhstan; Non-Invasive Acoustic-Based Monitoring of Uranium in Solutions; Non-Invasive Acoustic-Based Monitoring of Uranium in Solutions; and finally a summary.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Photo-Crosslinkable Naphthalene Diimide Polymer for Solution Processed n-i-p Perovskite Solar cells

Lead-halide perovskite has attracted tremendous attention due to its extraordinary optoelectronic properties.1 Charge transport layers play an important role in both solar cell device efficiency and long-term stability.2 Here we used a photo-crosslinkable polymer for n-i-p perovskite solar cells. Compared to the non-crosslinkable counterpart, we see an overall improved open-circuit voltage and efficiency in mixed-cation mixed-halide perovskite solar cell using the crosslinked naphthalene diimide polymer (NDI-CL) as cathode modification layer.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2026

Solution-Processed Oxide Thin Films for Perovskite Photovoltaics (Final Report)

The overarching goal of the voucher project is to evaluate the suitability of NexTC materials as functional layers in perovskite photovoltaic technology. There are several different perovskite device configurations that are being pursued for commercialization. Most are superstrate configuration (light enters the device through the glass substrate) and can be subdivided into two categories: PIN and NIP. At minimum, PIN devices have a transparent conductor (typically Indium Tin Dioxide [ITO] or Fluorine-Doped Tin Oxide [FTO]) and hole transport layer (HTL) deposited on glass before the perovskite is deposited. Alternatively, NIP devices have a transparent conductor and electron transport layer (ETL) deposited before the perovskite is deposited. NexTC produces several inks that can be deposited to replace or modify the transparent conductor and/or the ETL or HTL, depending on the device. NLR will produce PIN and NIP perovskite devices on substrates that have been coated by NexTC and compare to NLR-standard devices that perform among the best for research labs across the world. The work will ultimately expose NexTC products to the up-and-coming perovskite PV industry.

14 SOLAR ENERGY↗
DOE OSTI2016

Effects of solvent additive on “s-shaped” curves in solution-processed small molecule solar cells

A novel molecular chromophore, p-SIDT(FBTThCA8) 2 , is introduced as an electron-donor material for bulk heterojunction (BHJ) solar cells with broad absorption and near ideal energy levels for the use in combination with common acceptor materials. It is found that films cast from chlorobenzene yield devices with strongly s-shaped current–voltage curves, drastically limiting performance. We find that addition of the common solvent additive diiodooctane, in addition to facilitating crystallization, leads to improved vertical phase separation. This yields much better performing devices, with improved curve shape, demonstrating the importance of morphology control in BHJ devices and improving the understanding of the role of solvent additives.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗