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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Methods, systems, and devices for identifying computational operations based on power measurements

Disclosed herein are methods, systems, and devices for identifying computational operations based on power measurements. Disclosed herein are systems that may include a phase measurement unit configured to generate a first measurement based on a power signal, the first measurement characterizing a phase angle of the power signal. The systems may also include a power measurement unit configured to generate a second measurement based on the power signal, the second measurement characterizing an amplitude of one or more aspects of the power signal. The systems may further include a processing unit configured to identify a computational operation implemented by a target processing device, the identifying of the computational operation being based on a comparison of the first measurement and the second measurement with reference measurements.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Process for fabrication of enhanced β″-alumina solid electrolytes for energy storage devices and energy applications

A dense β″-alumina/zirconia composite solid electrolyte and process for fabrication are disclosed. The process allows fabrication at temperatures at or below 1600° C. The solid electrolytes include a dense composite matrix of β″-alumina and zirconia, and one or more transition metal oxides that aid the conversion and densification of precursor salts during sintering. The composite solid electrolytes find application in sodium energy storage devices and power-grid systems and devices for energy applications.

Lu, Xiaochuan↗
DOE OSTI2021

Cybersecurity Certification Recommendations for Interconnected Grid Edge Devices and Inverter Based Resources

Escalating deployment of PV and grid-edge devices on the distribution grid has increased the sustainability and efficiency of the electric grid. However, the increasing number of distributed energy resources (DERs) deployed creates a heightened cyber-physical interdependency on the distribution grid and thus creates more vectors for cyber-attacks to exploit through information and communication technology (ICT) systems and networks. For example, control signal packets can be modified, intercepted, or corrupted due to vulnerabilities in communication protocols used by microgrid controllers and grid edge devices for power control. Therefore, to mitigate and prevent cyber-attacks on grid edge devices and the inverter-based resources connected to the distribution grid, the U.S. Department of Solar Energy Technologies Office (SETO) awarded funding to the National Renewable Energy Laboratory and Sandia National Laboratory (SNL) to research, develop, and harmonize cybersecurity standards for Photovoltaic (PV) systems and for other kinds of DERs. To help develop a standard for DER cybersecurity, NREL established certification recommendations and test cases, in consensus with the solar industry and UL, for ensuring intrinsic design security for DERs. These recommendations were developed to bolster the cybersecure functionalities such as TLS, MAC, CRL, session resumption/renegotiation, and password, system, and service security management within the DER devices. The proposed test cases verify authentication, authorization, confidentiality, and data integrity for data and communications of DERs that use Transmission Control Protocol/Internet Protocol (TCP/IP). They were also developed to protect DER communications from eavesdropping, replay, man-in-the-middle, denial of service (DoS), spoofing through security certificates, least-privilege violation, and brute-force credentials. This report, which has been validated and reviewed by UL, expands upon those test cases to provide DER cybersecurity certification recommendations which increase DER resiliency and help to mitigate cyber-attacks. UL's collaboration with NREL and approval of this document will accelerate the adoption of a UL standard for DER cybersecurity.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

TEAMER: FOSWEC Mooring Modeling and Analysis, Post Access Report and Data

Floating oscillating surge wave energy converters (FOSWECs) offer several advantages over bottom-hinged oscillating surge wave energy converters, including large wave potential at deep-water sites with fewer permitting and environmental concerns outside territorial waters. As a team, Stevens Institute of Technology, Virginia Tech and Resolute Marine Energy are designing a 100 kW FOSWEC with DOE support (2020-2021) for the PacWave test site "PacWave". The proposed FOSWEC consists of a floating platform, two pivoting flaps, and an innovative power-take-off (PTO). The distance between the two flaps is around half the typical wavelength, resulting in out-of-phase motion and a reduction in motion of the frame and mooring loads. The overall goal of the project is to design, build, deploy and analyze a 1:2 scale (100-kW annual averaged electrical power output) device with reduced levelized cost of energy (LCOE) and peak-to-average power ratio, through the co-design and control of the PTO, WEC, and floating platform. This submission includes a Post Access Report and data for the project of Mooring Modeling and Analysis for Floating Oscillating Surge Wave Energy Converter that Powers Marine Aquaculture of RFTS2 (request for technical support). The data are used to generate all figures in the Post Access Report. Project was a collaboration between Virginia Tech and the National Renewable Energy Lab, with funding from TEAMER.

16 TIDAL AND WAVE POWER↗
DOE OSTI2026

Reliable Power for Remote Applications

Optical power beaming - using lasers to transmit energy across distances - could change how remote devices receive power. The National Laboratory of the Rockies (NLR) seeks partners to explore the next stage in long-distance power beaming for terrestrial and space-based applications.

14 SOLAR ENERGY↗
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

InP- and GaAs-Based 0.6 eV GaInAs Devices for Thermophotovoltaics and Laser Power Conversion

Emerging applications such as thermal energy grid storage, waste heat recovery and portable power generation require efficient thermophotovoltaic (TPV) converters tuned to temperatures near 1000 Degrees Celsius or below. Metamorphic GaInAs with larger lattice constants than InP present a promising option for these needs. The ability to grow these devices on GaAs substrates instead of more expensive InP would enhance the scalability of these devices. In this talk, we present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. These devices are realized using InAsP or GaInP/InAsP compositionally graded buffers which exhibit threading dislocation densities of 1.3 +/- 0.6 x 106 cm-2 and 8.9 +/- 1.7 x 106 cm-2 on InP and GaAs, respectively. Despite this difference in defect density, the devices generate similar open-circuit voltages of 0.386 V and 0.383 V, respectively, under irradiance producing a short-circuit current density of -10 A/cm2, with bandgap-voltage offsets of 0.20 and 0.21 V. We estimate their thermophotovoltaic efficiency using these measurements coupled with broadband reflectance measurments. The InP-based cell is estimated to yield 1.09 W/cm2 at 1100 Degrees Celsius vs. 0.92 W/cm2 for the GaAs-based cell, with TPV efficiencies of 16.8 vs. 9.2%. Both devices are limited by sub-bandgap absorption, which we assess largely occurs in the graded buffers. We estimate that the 1100 Degrees Celsius thermophotovoltaic efficiencies would increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application as laser power converters in the 2.0-2.3 um atmospheric window. We estimate efficiencies of 36.8% and 32.5% under 2.0 um monochromatic irradiance of 1.86 W/cm2 and 2.81 W/cm2, respectively.

ENGINEERING,MATERIALS SCIENCE,SOLAR ENERGY↗
DOE OSTI2020

Growth and characterization of homoepitaxial β-Ga 2 O 3 layers

ß-Ga 2 O 3 is a next-generation ultra-wide bandgap semiconductor (E g = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generation power electronic devices among other important applications. Analyzing the quality of deposited homoepitaxial layers used in such devices is challenging, in part due to the large probing depth in traditional x-ray diffraction (XRD) and also due to the surface-sensitive nature of atomic force microscopy (AFM). Here, a combination of evanescent grazing-incidence skew asymmetric XRD and AFM are investigated as an approach to effectively characterize the quality of homoepitaxial ß-Ga 2 O 3 layers grown by molecular beam epitaxy at a variety of Ga/O flux ratios. Accounting for both structure and morphology, optimal films are achieved at a Ga/O ratio of ~1.15, a conclusion that would not be possible to achieve by either XRD or AFM methods alone. Finally, fabricated Schottky barrier diodes with thicker homoepitaxial layers are characterized by J-V and C-V measurements, revealing an unintentional doping density of 4.3×10 16 cm -3 - 2×10 17 cm -3 in the epilayer. These results demonstrate the importance of complementary measurement methods for improving the quality of the ß-Ga 2 O 3 homoepitaxial layers used in power electronic and other devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Office Building Plug Load Disaggregation

This case study focuses on the National Renewable Energy Lab's succesful effort to develop a disaggregated breakdown of device-level power consumption in a zero energy office building by combining smart plug metering with a device inventory.

plug and process loads, PPLs, device-level meterin↗
DOE OSTI2020

Localized Flow Modification to Increase Power Capture of a Small-Scale Floating Undershot Waterwheel

The goal of the work described in this thesis is to design a flow augmentation device to increase the power capture and efficiency of a small-scale floating Under-Shot Water Wheel (USWW) currently being developed by Florida Atlantic University research funded by the U.S Department of Energy. The flow concentrator subsystem is intended to maximize the kinetic energy extracted by the marine hydrokinetic (MHK) energy collection device through modification of the local flow field across the capture plane. The primary objective is to increase the velocity and/or rate of mass inflow through the turbine through inserting a streamlined body in the region of interest. By utilizing the resulting flow field to increase hydraulic forcing on the waterwheel blades, the torque and/or RPM of the USWW can be increased. Based on experimental testing in the FAU wave tank at 1:5 prototype scale (280 mm wheel diameter) the flow concentrator was shown to produce an increase in device power coefficient of 17-55% measured over a velocity range of 0.16-0.45 m/s.

Hess, Sullivan↗
DOE OSTI2025

Suppression of phase separation in AlGaInAs compositionally graded buffers for 1550 nm photovoltaic converters on GaAs

We investigate strategies to suppress phase separation and reduce threading dislocation density (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining the results from high resolution x-ray diffraction, cathodoluminescence, transmission electron microscopy, and photovoltaic device measurements, we correlate the choices of epitaxial growth conditions with the defect structure of the CGBs and subsequent device performance. Both the use of substrates with high misorientation off (100) toward the (111)A plane and Zn doping instead of Si doping are shown to suppress phase separation and reduce TDD. We demonstrate a 0.74 eV GaInAs device grown on a GaAs substrate offcut 19.5° toward (111)A using a Zn-doped AlGaInAs CGB with TDD = 3.5 ± 0.2 × 10 6 cm -2 that has a bandgap-open circuit voltage offset of only 0.434 V measured under the AM1.5G solar spectrum. We characterized this device under high-intensity irradiance from a 1570 nm laser and measured a 31.9% peak laser power conversion efficiency at 3.6 W/cm 2 irradiance. These results provide a roadmap to the manufacture of laser- and thermal-power conversion devices with the performance and cost-effectiveness needed to drive adoption of these technologies at scale.

14 SOLAR ENERGY↗
DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Carbazole-Based Hole-Transport Materials for High-Efficiency and Stable Perovskite Solar Cells

As organic–inorganic halide perovskite solar cells (PSCs) near commercialization, stability challenges during real-world conditions, such as durability at elevated temperatures, still need to be addressed. We have previously reported that doping of triarylamine-based hole-transport layers (HTLs) with a triarylamine-based radical cation salt (EHCz-3EtCz/EH44-ox) leads to enhanced PSC stability at elevated temperatures. While it was shown the radical cation dopant did not need to be identical to the HTL matrix, little was known about dopant exchange to realize the maximum impact on device-level properties (e.g., increase in low intrinsic conductivity, mobility, hydrophobic properties, ease of synthesis, and thermal stability). In this paper, we study the impact of dopant exchange among stable, low-cost, high-glass-transition temperature (Tg), and easily synthesized triarylamine-based HTL and radical triarylamine cation salts as dopants. Using EH44-ox as dopant leads to the improved device-level power conversion efficiency (PCE) for all HTL matrices assessed. Moreover, increasing the number of ethylhexyl chains from one to two per molecule and positioning these chains at the periphery rather than the core resulted in improved hydrophobicity. PSCs based on our HTL formulations have similar power conversion efficiencies (PCE) as those of PSCs based on commercially available HTLs while demonstrating greatly improved device-level stability at elevated temperatures.

14 SOLAR ENERGY↗
DOE OSTI2022

A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters

Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.

current commutation, current source inverter, powe↗
DOE OSTI2024

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

The need for reliable bonded interface materials is critical to realize the performance benefits of wide-bandgap devices in power electronic modules, especially in operating temperatures greater than 150 degrees Celsius. In this paper, we investigate the thermomechanical performance of sintered copper (Cu) as a large-area attachment, bonded between Cu baseplates and active-metal-bonded substrates, under accelerated thermal shock (-40 degrees Celsius to 200 degrees Celsius) conditions. In the fabrication phase of the samples, we used different stencil patterns and found out that the grid and stripe patterns resulted in a better outgassing of the residual organics during the sintering process, thereby ensuring a substantially improved bond quality than a full-area print. The paste consisted of Cu microflakes and we performed sintering using a Budatec SP300 sintering press at 275 degrees Celsius with 15 MPa of bonding pressure for 5 minutes in a nitrogen atmosphere. Under accelerated experiments, we monitored the degradation of the sintered Cu bond in the samples through C-mode scanning acoustic microscope (C-SAM) images. To quantify the defect percentage in C-SAM images, we investigated image denoising techniques to exclude the pattern prints. Finally, we cross-sectioned a sample and obtained digital microscope images, which revealed adhesive fracture as the dominant failure mechanism.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Low-cost connectors for inverters and converters and methods of manufacturing and using the same

In some embodiments, systems and methods for connector assembly for use with an AC or DC power interface of a power conversion device, such as a converter and an inverter, are provided. The connector assembly can include a circuit board, a power connector, and a pin. The power connector can have a base configured to be secured relative to the circuit board and define a first channel extending through the power connector along a first channel axis. The first pin can have a first pin body that extends along a first pin axis and a first connection element that extends along the first pin axis from the first pin body to a first terminal end that is skewed relative to the first pin axis.

Khaligh, Alireza↗
DOE OSTI2023

Envisioning the Future Renewable and Resilient Energy Grids—A Power Grid Revolution Enabled by Renewables, Energy Storage, and Energy Electronics

Today’s power grids are facing tremendous challenges because of the ever-increasing power demand, system complexity, infrastructure cost, knowledge base, and policy and regulatory issues to achieve supply–demand power balance and resiliency with respect to more frequent extreme weather events and cyberattacks. It is particularly challenging when the transition toward 100% intermittent renewable energy sources is considered. Many countries are calling for building up more transmission and distribution lines to increase power delivery capacities. This article is an attempt to answer two urgent questions: Is more transmission and distribution infrastructure really needed to meet the increasing power demand? What kind of future grid infrastructure should we envision and build? This article attempts to answer these questions and proposes the concept of community-centric asynchronous renewable and resilient energy grids. By clearly differentiating the concepts of grid resilience and reliability, the importance of building resilient power electronics’ devices and robust system-level control algorithms to achieve 100% renewable energy integrated resilient grids is presented. To identify the shortcomings and propose advancements, power electronics’ technologies are categorized using the proposed concepts of natural source frequencies (NSf), energy storage, direct energy conversion/control and fault protection (DeCaFp), and high-efficiency energy consumption and buffering (heECaB) technology. The ability of networked microgrids to greatly reduce power outages and power system restoration time is demonstrated by leveraging robust decentralized and centralized control algorithms, identified through a comprehensive literature review. Future research areas are proposed to further enhance grid stability, controllability, cybersecurity, and protection against faults in the presence of 100% renewable sources by leveraging the advanced capabilities of NSf, DeCaFp, and heECaB devices and system-level control algorithms.

14 SOLAR ENERGY↗