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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Multilayer Architecture Barriers for High Temperature Nuclear Applications

Innovative thin film multilayer metal/ceramic barrier coatings have been developed by Argonne National Laboratory to protect fuel cladding against different phenomena that can be encountered under the harsh operating conditions of advanced nuclear reactors. One phenomenon is Fuel-Cladding Chemical Interaction (FCCI), which can represent a challenge to the performance of steel-clad metallic fuels in sodium-cooled fast reactors (SFRs), especially when operating to high burnups at elevated cladding temperatures, and long fuel residence time. Another phenomenon is the corrosion of zirconium-based cladding under prototypic boiling water reactor (BWR) conditions and associated cladding during off normal conditions, including loss of coolant accidents (LOCA). This work provides details of the development and testing of a thin film (few microns) multilayer metal/ceramic (CrY/Y 2 O 3 ) coatings on steel cladding and its performance against FCCI. The coating architecture evolved through systematic mechanical testing, radiation tolerance assessments, and high-temperature diffusion studies from a preliminary multilayer concept to an optimized high-performance design. The optimized structure leverages stoichiometric Y 2 O 3 for its exceptional radiation stability, chemical inertness, and ultra-low fission product diffusivity (e.g., Ce diffusivity ~10 -20 m 2 /s in irradiated Y 2 O 3 at 650 °C). This is paired with ductile chromium-rich interlayers (Cr 95 Y 5 ), which significantly enhance fracture toughness and mechanical resilience. Design refinements, including increased ceramic layer thickness and optimized Cr–Y interlayer composition, eliminated fracture propagation and preserved coating integrity under extreme mechanical stress (>10× typical reactor conditions) and prolonged radiation exposure (~300 dpa). Those conditions are well beyond expected conditions during normal operations in SFR, and cover some of the transient conditions as well. In addition, the coating deposition was demonstrated to be applied uniformly to the inner surface of steel tubes representing prototypic SFR cladding. Another phenomenon under consideration in this work is the corrosion of zirconium-based cladding under prototypic boiling water reactor (BWR) conditions and associated off normal conditions including loss of coolant accident (LOCA). Another multilayer thin film coating is considered for mitigation of this phenomenon, where a coating of yttrium aluminum and yttrium aluminum ceramic/metal thin film coating. Preliminary results on the coating performance during high temperature thermal cycling (up to 1000 C) have shown promising performance of the coating. On-going optimization of the coating will continue in FY26.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
NASA NTRS2007

Post Irradiation Evaluation of Thermal Control Coatings and Solid Lubricants to Support Fission Surface Power Systems

The development of a nuclear power system for space missions, such as the Jupiter Icy Moons Orbiter or a lunar outpost, requires substantially more compact reactor design than conventional terrestrial systems. In order to minimize shielding requirements and hence system weight, the radiation tolerance of component materials within the power conversion and heat rejection systems must be defined. Two classes of coatings, thermal control paints and solid lubricants, were identified as material systems for which limited radiation hardness information was available. Screening studies were designed to explore candidate coatings under a predominately fast neutron spectrum. The Ohio State Research Reactor Facility staff performed irradiation in a well characterized, mixed energy spectrum and performed post irradiation analysis of representative coatings for thermal control and solid lubricant applications. Thermal control paints were evaluated for 1 MeV equivalent fluences from 10(exp 13) to 10(exp 15) n per square centimeters. No optical degradation was noted although some adhesive degradation was found at higher fluence levels. Solid lubricant coatings were evaluated for 1 MeV equivalent fluences from 10(exp 15) to 10(exp 16) n per square centimeters with coating adhesion and flexibility used for post irradiation evaluation screening. The exposures studied did not lead to obvious property degradation indicating the coatings would have survived the radiation environment for the previously proposed Jupiter mission. The results are also applicable to space power development programs such as fission surface power for future lunar and Mars missions.

Bowman, Cheryl L.↗
DOE OSTI2020

Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation

In this paper, we studied the total ionization dose (TID) effects on the multilevel-cell (MLC) 3-D NAND flash memory using Co-60 gamma radiation. We found a significant page-to-page bit error variation within a physical memory block of the irradiated memory chip. Our analysis showed that the origin of the bit error variation is the unique vertical layer-dependent TID response of the 3-D NAND. We found that the memory pages located at the upper and lower layers of the 3-D stack show higher fails compared to the middle-layer pages of a given memory block. We confirmed our findings by comparing radiation response of four different chips of the same specification. In addition, we compared the TID response of the MLC 3-D NAND with that of the 2-D NAND chip, which showed less page-to-page variation in bit error within a given memory block. We discuss the possible application of our findings for the radiation-tolerant smart memory controller design.

3-D NAND flash↗
NASA NTRS2012

A Radiation Hardened by Design CMOS ASIC for Thermopile Readouts

A radiation hardened by design (RHBD) mixed-signal application specific integrated circuit (ASIC) has been designed for a thermopile readout for operation in the harsh Jovian orbital environment. The multi-channel digitizer (MCD) ASIC includes 18 low noise amplifier channels which have tunable gain/filtering coefficients, a 16-bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The 18 channels, SDADC and controller were designed to operate with immunity to single event latchup (SEL) and to at least 10 Mrad total ionizing dose (TID). The ASIC also contains a radiation tolerant 16-bit 20 MHz Nyquist ADC for general purpose instrumentation digitizer needs. The ASIC is currently undergoing fabrication in a commercial 180 nm CMOS process. Although this ASIC was designed specifically for the harsh radiation environment of the NASA led JEO mission it is suitable for integration into instrumentation payloads 011 the ESA JUICE mission where the radiation hardness requirements are slightly less stringent.

Quilligan, G.↗
DOE OSTI2021

The effects of microstructures and radiation damage on the deformation behavior of a HT-9 alloy using microtensile testing

Understanding the influence of radiation damage on the mechanical properties of HT-9 and other tempered martensitic alloys is part of the mission in developing radiation-tolerant materials for the next generation of nuclear reactors. Although there has been extensive data on the macroscopic mechanical properties of the irradiated HT-9 alloys and microstructural changes, it is not well-understood how radiation damage and the resulting microstructural changes influence the local mechanical properties. In this study, we utilized in situ SEM microtensile testing to investigate the deformation behavior of specific martensitic boundaries in 1 dpa proton-irradiated HT-9 and answered the question of what is the weakest link. Additionally, we provided the direct observation of the failure modes of microtensiles containing high angle and low angle martensitic boundaries. In the unirradiated condition, the deformation is ductile and no martensitic boundary failure is observed. In the irradiated condition, the high angle martensitic boundaries are more susceptible to radiation-induced boundary failure as compared to the low angle martensitic boundaries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗
NASA NTRS2002

Recent photonics activites under the NASA electronic parts and packaging (NEPP) program

With the rapidly increasing insertion of photonic devices, circuits and subsystems into NASA spacecraft, a variety of issues associated with reliability and radiation tolerance have arisen. In this paper, we discuss these issues from the perspective of the work currently ongoing in the NASA Electronic Parts and Packaging (NEPP) Program. This Program is focused on evaluating the reliability and radiation response of advanced and emerging microelectronics and photonics technologies of interest to NASA spacecraft system designers.

NEEP↗
NASA NTRS1989

Advances in thin-film solar cells for lightweight space photovoltaic power

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, Geoffrey A.↗
DOE OSTI2024

Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect and eliminate because of their highly localized nature. We propose that their high-stored internal energy makes potential sites for defect nucleation sites under radiation, particularly if their locations coincide with the electrically sensitive regions of a transistor. In this study, we validate this hypothesis with molecular dynamic simulation and experiments exposing both pristine and annealed HEMTS to 2.8 MeV Au +3 irradiation. Our unique annealing process uses mechanical momentum of electrons, also known as the electron wind force (EWF) to mitigate the residual stress at room temperature. High-resolution transmission electron microscopy and cathodoluminescence spectra reveal the reduction of point defects and dislocations near the two-dimensional electron gas region of EWF-treated devices compared to pristine devices. The EWF-treated HEMTs showed relatively higher resilience with approximately 10% less degradation of drain saturation current and ON-resistance and 5% less degradation of peak transconductance. Both mobility and carrier concentration of the EWF-treated devices were less impacted compared to the pristine devices. Our results suggest that the lower density of nanoscale stress localization contributed to the improved radiation tolerance of the EWF-treated devices. Intriguingly, the EWF is found to modulate the defect distribution by moving the defects to electrically less sensitive regions in the form of dislocation networks, which act as sinks for the radiation induced defects and this assisted faster dynamic annealing.

AlGaN/GaN HEMTs↗
NASA NTRS1977

Development of a high efficiency thin silicon solar cell

A key to the success of this program was the breakthrough development of a technology for producing ultra-thin silicon slices which are very flexible, resilient, and tolerant of moderate handling abuse. Experimental topics investigated were thinning technology, gaseous junction diffusion, aluminum back alloying, internal reflectance, tantalum oxide anti-reflective coating optimization, slice flexibility, handling techniques, production rate limiting steps, low temperature behavior, and radiation tolerance.

Lindmayer, J.↗
NASA NTRS2005

Radiation Testing and Evaluation Issues for Modern Integrated Circuits

Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.

LaBel, Kenneth A.↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
NASA NTRS1984

Radiation Damage Workshop

The availability of data regarding the radiation behavior of GaAs and silicon solar cells is discussed as well as efforts to provide sufficient information. Other materials are considered too immature for reasonable radiation evaluation. The lack of concern over the possible catastrophic radiation degradation in cascade cells is a potentially serious problem. Lithium counterdoping shows potential for removing damage in irradiated P-type material, although initial efficiencies are not comparable to current state of the art. The possibility of refining the lithium doping method to maintain high initial efficiencies and combining it with radiation tolerant structures such as thin BSF cells or vertical junction cells could provide a substantial improvement in EOL efficiencies. Laser annealing of junctions, either those formed ion implantation or diffusion, may not only improve initial cell performance but might also reduce the radiation degradation rate.

Stella, P. M.↗
NASA NTRS2018

Commercial Off-The-Shelf GPU Qualification for Space Applications

With increased sensor data rates, and limited downlink capability, NASA missions have increased demands for onboard processing for applications ranging from synthetic aperture radar (SAR) data reduction to hyperspectral image processing and recognition, and even artificial intelligence (AI). Graphics Processor Units (GPUs) offer an attractive processing architecture for many of the applications due to their massive parallelism. As no radiation hardened GPU devices currently exist, any near term GPU-based onboard processors must use commercially available devices. To address this need NASA GSFC is collaborating with Cubic Aerospace Incorporated to, (a) characterize the capability of GPUs to meet the demands of a candidate onboard processing application, thereby demonstrating their ability to improve mission performance, reduce spacecraft SWaP, and potentially enable new missions, and (b) evaluate the radiation tolerance of capable COTS GPU devices to determine their suitability for spaceflight applications and understand any mitigations that are needed. A candidate onboard processing image has been prototyped and evaluated on a commercial GPU board and has demonstrated significantly increased processing throughput. Radiation tests for commercial GPU devices are planned for early fiscal year 2019.

Onboard processing↗
DOE OSTI2020

Recent Studies on Void Shrinkage in Metallic Materials Subjected to In Situ Heavy Ion Irradiations

The continuous formation and growth of voids induced by radiations in metallic materials may lead to significant microstructure damage and degradation of mechanical properties. In sharp contrast to the void swelling commonly observed in irradiated metallic materials, nanovoids in nanoporous metallic materials are found to shrink during radiation and thus nanovoids enhance the radiation tolerance of metallic materials. This article reviews recent studies on size-dependent void shrinkage in metallic materials subject to in situ heavy ion irradiation. Furthermore, we demonstrate the capability of machine learning in identifying and tracking the evolution of nanovoids. Finally, the physical mechanisms of radiation induced void shrinkage revealed by simulation studies are briefly summarized.

36 MATERIALS SCIENCE↗
NASA NTRS2015

Radiation-Resistant Photon-Counting Detector Package Providing Sub-ps Stability for Laser Time Transfer in Space

We are reporting on a design, construction and performance of photon-counting detector packages based on silicon avalanche photodiodes. These photon-counting devices have been optimized for extremely high stability of their detection delay. The detectors have been designed for future applications in fundamental metrology and optical time transfer in space. The detectors have been qualified for operation in space missions. The exceptional radiation tolerance of the detection chip itself and of all critical components of a detector package has been verified in a series of experiments.

radiation hardness↗