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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

Wilt, David M.↗
NASA NTRS2001

Enabling technology for NASA's Europa Orbiter mission

The authors will describe the drivers for the subsystem requirements in the Europa Orbiter mission, in particular the mission criticality of the IMU and the predicted natural space radiation environments that require enabling technologies to be identified. Descriptions of the Europa IMU and the HRG technology are given with emphasis on the inherent radiation hardness in the HRG principle of operation and sensor construction, as well as the steps taken to further harden the sensor electronics.

inertial measurement unit inertial reference unit ↗
NASA NTRS1997

(abstract) 9 (micro)m Cutoff 640x480 Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

Long wavelength infrared (LWIR) detectors, 8 (micro)m to 12 (micro)m, are of great interest for a variety of ground-based and space-borne applications. These applications have placed stringent requirements on the performance of the infrared detectors and arrays including high detectivity, low dark current, uniformity, radiation hardness, and low power dissipation. I will discuss the development and progress of GaAs based long-wavelength quantum well infrared photodetectors (QWIPs) to meet those stringent requirements and the demonstration of a 9 (micro)m cutoff 640x480 QUIP focal plane array camera. The noise equivalent temperature difference of the focal plane array is 25 mK at 300 K background and the operating temperature is 70 K.

long wavelength infrared detectors LWIR detector a↗
NASA NTRS1995

16 Infrared Hot Electron Transistor

Very long wavelength infrared (VWIR) photodetectors, 14 20 , are of a great interest for variety of space-borne applications. These space applications have placed stringent requirements on the performance of the infrared detectors and arrays including high detectivity, low dark current, uniformity, radiation hardness and lower power dissipation. I will discuss the development and progress of AlxGal- xAs/GaAs VWIR quantum well infrared photodetectors (QWIPs) to meet those stringent requirements and the demonstration of a 15 128x128 QWIP focal plane array camera. The noise equivalent temperature difference of the focal plane array is 30 mK at 300 K background, and operating temperature is 45 K.

Electron Transistor↗
NASA NTRS2006

Application of Solar-Electric Propulsion to Robotic and Human Missions in Near-Earth Space

Solar-electric propulsion (SEP) is becoming of interest for application to a wide range of missions. The benefits of SEP are strongly influenced by system element performance, especially that for the power system. Solar array performance is increasing rapidly and promises to continue to do so for another 10 to 20 years (Fig. 1). At the same time, cost per watt is decreasing. Radiation hardness is increasing. New concepts for how to design a SEP are emerging. These improvements lead to changes in the best ways to apply SEP technology to missions, and broadening of the practical uses of SEP technology compared to competing technologies. This paper addresses the evolving characteristics of SEP technology from the point of view of mission design, and how mission profile characteristics can be designed to best take advantage of evolving SEP characteristics. Mission concepts include robotic lunar landers and orbiters; scientific planetary spacecraft; delivery of spacecraft to geosynchronous orbit from inclined and low-inclination launch orbits; and lunar cargo delivery from Earth orbit to lunar orbit. Expendable and re-usable SEP profiles are considered. Flight control considerations are abstracted from recent papers by the author to describe how these influence SEP design and operations.

Woodcock, Gordon↗
NASA NTRS2007

Materials-of-Construction Radiation Sensitivity for a Fission Surface Power Convertor

A fission reactor combined with a free-piston Stirling convertor is one of many credible approaches for producing electrical power in space applications. This study assumes dual-opposed free-piston Stirling engines/linear alternators that will operate nominally at 825 K hot-end and 425 K cold-end temperatures. The baseline design options, temperature profiles, and materials of construction discussed here are based on historical designs as well as modern convertors operating at lower power levels. This notional design indicates convertors primarily made of metallic components that experience minimal change in mechanical properties for fast neutron fluences less than 10(sup 20) neutrons per square centimeter. However, these radiation effects can impact the magnetic and electrical properties of metals at much lower fluences than are crucial for mechanical property integrity. Moreover, a variety of polymeric materials are also used in common free-piston Stirling designs for bonding, seals, lubrication, insulation and others. Polymers can be affected adversely by radiation doses as low as 10(sup 5) - 10(sup 10) rad. Additionally, the absorbing dose rate, radiation hardness, and the resulting effect (either hardening or softening) varies depending on the nature of the particular polymer. The classes of polymers currently used in convertor fabrication are discussed along possible substitution options. Thus, the materials of construction of prototypic Stirling convertor engines have been considered and the component materials susceptible to damage at the lowest neutron fluences have been identified.

Bowman, Cheryl L.↗
NASA NTRS2001

Integrated semiconductor-magnetic random access memory system

The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

Katti, Romney R.↗
NASA NTRS2000

Programmable Logic Application Notes

This column will be provided each quarter as a source for reliability, radiation results, NASA capabilities, and other information on programmable logic devices and related applications. This quarter will continue a series of notes concentrating on analysis techniques with this issue's section discussing: Digital Timing Analysis Tools and Techniques. Articles in this issue include: SX and SX-A Series Devices Power Sequencing; JTAG and SXISX-AISX-S Series Devices; Analysis Techniques (i.e., notes on digital timing analysis tools and techniques); Status of the Radiation Hard reconfigurable Field Programmable Gate Array Program, Input Transition Times; Apollo Guidance Computer Logic Study; RT54SX32S Prototype Data Sets; A54SX32A - 0.22 micron/UMC Test Results; Ramtron FM1608 FRAM; and Analysis of VHDL Code and Synthesizer Output.

Katz, Richard↗
NASA NTRS2008

Fast Electromechanical Switches Based on Carbon Nanotubes

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Kaul, Anupama↗
NASA NTRS2008

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

Zheng, Xinyu↗
NASA NTRS2007

Stretched Lens Array Squarerigger (SLASR) Technology Maturation

Since April 2005, our team has been underway on a competitively awarded program sponsored by NASA s Exploration Systems Mission Directorate to develop, refine, and mature the unique solar array technology known as Stretched Lens Array SquareRigger (SLASR). SLASR offers an unprecedented portfolio of performance metrics, SLASR offers an unprecedented portfolio of performance metrics, including the following: Areal Power Density = 300 W/m2 (2005) - 400 W/m2 (2008 Target) Specific Power = 300 W/kg (2005) - 500 W/kg (2008 Target) for a Full 100 kW Solar Array Stowed Power = 80 kW/cu m (2005) - 120 kW/m3 (2008 Target) for a Full 100 kW Solar Array Scalable Array Capacity = 100 s of W s to 100 s of kW s Super-Insulated Small Cell Circuit = High-Voltage (300-600 V) Operation at Low Mass Penalty Super-Shielded Small Cell Circuit = Excellent Radiation Hardness at Low Mass Penalty 85% Cell Area Savings = 75% Lower Array Cost per Watt than One-Sun Array Modular, Scalable, & Mass-Producible at MW s per Year Using Existing Processes and Capacities

O'Neill, Mark↗
NASA NTRS2005

Demonstration of the First 4H-SiC EUV Detector with Large Detection Area

Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short penetration depth. Most of the carries are absorbed at the surface and recombined there due to the high surface recombination before reach the depletion region, resulting very low quantum efficiency. On the other hand, for Schottky structures, the active region starts from the surface and carriers generated from the surface can be efficiently collected. 4H-Sic has a bandgap of 3.26eV and is immune to visible light background noise. Also, 4H-Sic detectors usually have very good radiation hardness and very low noise, which is very important for space applications where the signal is very weak. The E W photodiodes presented in this paper are based on Schottky structures. Platinum (Pt) and Nickel (Ni) are selected as the Schottky contact metals, which have the highest electron work functions (5.65eV and 5.15eV, respectively) among all the known metals on 4H-Sic.

Xin, Xiaobin↗
NASA NTRS2007

Wide-Temperature-Range Integrated Operational Amplifier

A document discusses a silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) integrated- circuit operational amplifier to be replicated and incorporated into sensor and actuator systems of Mars-explorer robots. This amplifier is designed to function at a supply potential less than or equal to 5.5 V, at any temperature from -180 to +120 C. The design is implemented on a commercial radiation-hard SOI CMOS process rated for a supply potential of less than or equal to 3.6 V and temperatures from -55 to +110 C. The design incorporates several innovations to achieve this, the main ones being the following: NMOS transistor channel lengths below 1 m are generally not used because research showed that this change could reduce the adverse effect of hot carrier injection on the lifetimes of transistors at low temperatures. To enable the amplifier to withstand the 5.5-V supply potential, a circuit topology including cascade devices, clamping devices, and dynamic voltage biasing was adopted so that no individual transistor would be exposed to more than 3.6 V. To minimize undesired variations in performance over the temperature range, the transistors in the amplifier are biased by circuitry that maintains a constant inversion coefficient over the temperature range.

Mojarradi, Mohammad↗
NASA NTRS2010

Smart Power Supply for Battery-Powered Systems

A power supply for battery-powered systems has been designed with an embedded controller that is capable of monitoring and maintaining batteries, charging hardware, while maintaining output power. The power supply is primarily designed for rovers and other remote science and engineering vehicles, but it can be used in any battery alone, or battery and charging source applications. The supply can function autonomously, or can be connected to a host processor through a serial communications link. It can be programmed a priori or on the fly to return current and voltage readings to a host. It has two output power busses: a constant 24-V direct current nominal bus, and a programmable bus for output from approximately 24 up to approximately 50 V. The programmable bus voltage level, and its output power limit, can be changed on the fly as well. The power supply also offers options to reduce the programmable bus to 24 V when the set power limit is reached, limiting output power in the case of a system fault detected in the system. The smart power supply is based on an embedded 8051-type single-chip microcontroller. This choice was made in that a credible progression to flight (radiation hard, high reliability) can be assumed as many 8051 processors or gate arrays capable of accepting 8051-type core presently exist and will continue to do so for some time. To solve the problem of centralized control, this innovation moves an embedded microcontroller to the power supply and assigns it the task of overseeing the operation and charging of the power supply assets. This embedded processor is connected to the application central processor via a serial data link such that the central processor can request updates of various parameters within the supply, such as battery current, bus voltage, remaining power in battery estimations, etc. This supply has a direct connection to the battery bus for common (quiescent) power application. Because components from multiple vendors may have differing power needs, this supply also has a secondary power bus, which can be programmed a priori or on-the-fly to boost the primary battery voltage level from 24 to 50 V to accommodate various loads as they are brought on line. Through voltage and current monitoring, the device can also shield the charging source from overloads, keep it within safe operating modes, and can meter available power to the application and maintain safe operations.

Krasowski, Michael J.↗
NASA NTRS2011

Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose Rates

We have presented results of ultra-low dose rate irradiations (< or = 10 mrad(Si)/s) for a variety of radiation hardened and commercial linear bipolar devices. We observed low dose rate enhancement factors exceeding 1.5 in several parts. The worst case of dose rate enhancement resulted in functional failures, which occurred after 10 and 60 krad(Si), for devices irradiated at 0.5 and 10 mrad(Si)/s, respectively. Devices fabricated with radiation hardened processes and designs also displayed dose rate enhancement at below 10 mrad(Si)/s. Furthermore, the data indicated that these devices have not reached the damage saturation point. Therefore the degradation will likely continue to increase with increasing total dose, and the low dose rate enhancement will further magnify. The cases presented here, in addition to previous examples, illustrate the significance and pervasiveness of low dose rate enhancement at dose rates lower than 10 mrad(Si). These results present further challenges for radiation hardness assurance of bipolar linear circuits, and raise the question of whether the current standard test dose rate is conservative enough to bound degradations due to ELDRS.

Chen, Dakai↗
NASA NTRS2011

Compact Micromachined Bandpass Filters for Infrared Planetary Spectroscopy

The thermal instrument strawman payload of the Jupiter Europa Orbiter on the Europa Jupiter Science Mission will map out thermal anomalies, the structure, and atmospheric conditions of Europa and Jupiter within the 7-100 micron spectral range. One key requirement for the payload is that the mass cannot exceed 3.7 kg. Consequently, a new generation of light-weight miniaturized spectrometers needs to be developed. On the path toward developing these spectrometers is development of ancillary miniaturized spectroscopic components. In this paper, we present a strategy for making radiation hard and low mass FIR band pass metal mesh filters. Our strategy involves using MEMS-based fabrication techniques, which will permit the quasi-optical filter structures to be made with micron-scale precision. This will enable us to achieve tight control over both the pass band of the filter and the micromachined silicon support structure architecture, which will facilitate integration of the filters for a variety of applications.

Brown, Ari D.↗
NASA NTRS2006

Alpha-Voltaic Sources Using Diamond as Conversion Medium

A family of proposed miniature sources of power would exploit the direct conversion of the kinetic energy of a particles into electricity in diamond semiconductor diodes. These power sources would function over a wide range of temperatures encountered in terrestrial and outer-space environments. These sources are expected to have operational lifetimes of 10 to 20 years and energy conversion efficiencies >35 percent. A power source according to the proposal would include a pair of devices like that shown in the figure. Each device would contain Schottky and p/n diode devices made from high-band-gap, radiation-hard diamond substrates. The n and p layers in the diode portion would be doped sparsely (<1014 cm-3) in order to maximize the volume of the depletion region and thereby maximize efficiency. The diode layers would be supported by an undoped diamond substrate. The source of a particles would be a thin film of 244Cm (half-life 18 years) sandwiched between the two paired devices. The sandwich arrangement would force almost every a particle to go through the active volume of at least one of the devices. Typical a particle track lengths in the devices would range from 20 to 30 microns. The a particles would be made to stop only in the undoped substrates to prevent damage to the crystalline structures of the diode portions. The overall dimensions of a typical source are expected to be about 2 by 2 by 1 mm. Assuming an initial 244Cm mass of 20 mg, the estimated initial output of the source is 20 mW (a current of 20 mA at a potential of 1 V).

Patel, Jagadish U.↗