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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Preemptible I/O Scheduling of Garbage Collection for Solid State Drives

Unlike hard disks, flash devices use out-of-place updates operations and require a garbage collection (GC) process to reclaim invalid pages to create free blocks. This GC process is a major cause of performance degradation when running concurrently with other I/O operations as internal bandwidth is consumed to reclaim these invalid pages. The invocation of the GC process is generally governed by a low watermark on free blocks and other internal device metrics that different workloads meet at different intervals. This results in an I/O performance that is highly dependent on workload characteristics. In this paper, we examine the GC process and propose a semipreemptible GC (PGC) scheme that allows GC processing to be preempted while pending I/O requests in the queue are serviced. Moreover, we further enhance flash performance by pipelining internal GC operations and merge them with pending I/O requests whenever possible. Our experimental evaluation of this semi-PGC scheme with realistic workloads demonstrates both improved performance and reduced performance variability. Write-dominant workloads show up to a 66.56% improvement in average response time with a 83.30% reduced variance in response time compared to the non-PGC scheme. In addition, we explore opportunities of a new NAND flash device that supports suspend/resume commands for read, write, and erase operations for fully PGC (F-PGC). Our experiments with an F-PGC enabled flash device show that request response time can be improved by up to 14.57% compared to semi-PGC.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

Grounding related issues are critical for safe and reliable operation of solid-state transformer (SST) in medium-voltage (MV) applications, e.g., solar photovoltaic and energy storage integration, date center, electric vehicle fast charging, etc. This article presents for the first time the issue of additional device voltage stress due to grounding-loop current in current-source SST, using the soft-switching solid-state transformer (S4T) as an example. The S4T features single-stage isolated AC-AC, AC-DC, or DC-DC conversion with full-range ZVS, derived from flyback converter or current-source converter (CSC). However, the flyback operation for CSC-based SST means that magnetizing current flows through the reverse-blocking devices on only one side of the medium-frequency transformer (MFT) at a time. Then, the voltages across the devices, especially those on the other side of the MFT, can be influenced by parasitic current. A parasitic model of a modular S4T (M-S4T) prototype is developed from direct measurements and datasheets. Using the developed parasitic model and equivalent circuits, the causes of the voltage stress are analyzed. A voltage-stress mitigation scheme of connecting additional grounding capacitors is proposed. Damping resistors are also installed to damp out the grounding-loop resonance. A robust parameter design of the proposed scheme is given. The existence of the voltage stress issue and the effectiveness of the proposed scheme are verified experimentally on an MV SiC M-S4T prototype with inherent parameter variations among the five modules in the prototype. Here, both single-module and stacked-module operation are demonstrated during steady state and dynamic conditions up to 4 kV peak.

42 ENGINEERING↗
DOE OSTI2019

Atom–by–Atom Fabrication of Single and Few Dopant Quantum Devices

Atomically precise fabrication has an important role to play in developing atom-based electronic devices for use in quantum information processing, quantum materials research, and quantum sensing. Atom-by-atom fabrication has the potential to enable precise control over tunnel coupling, exchange coupling, on-site charging energies, and other key properties of basic devices needed for solid-state quantum computing and analog quantum simulation. Using hydrogen-based scanning probe lithography, individual dopant atoms are deterministically placed relative to atomically aligned contacts and gates to build single electron transistors, single atom transistors, and gate-controlled quantum sensing devices. Here, the key steps required to fabricate and demonstrate the essential building blocks needed for spin selective initialization/readout and coherent quantum manipulation are described.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Tunable Solid‐State Properties and Anisotropic Charge Mobility in Hydrogen‐Bonded Diketopyrrolopyrrole Polymers via Automated Device Fabrication and Characterization

The optoelectronic properties of semiconducting polymers and device performance rely on a delicate interplay of design and processing conditions. However, screening and optimizing the relationships between these parameters for reliably fabricating organic electronics can be an arduous task requiring significant time and resources. To overcome this challenge, Polybot is developed—a robotic platform within a self‐driving lab that can efficiently produce organic field‐effect transistors (OFETs) from various semiconducting polymers via high‐throughput blade coating deposition. Polybot not only handles the fabrication process but also can conduct characterization tests on the devices and autonomously analyze the data gathered, thus facilitating the rapid acquisition of data on a large scale. This work leverages the capabilities of this platform to investigate the fabrication of OFETs using hydrogen bonding‐containing semiconducting polymers. Through high‐throughput fabrication and characterization, various data trends are analyzed, and large extents of anisotropic charge mobility are observed in devices. The materials are thoroughly characterized to understand the role of processing conditions in solid state and electronic properties of these organic semiconductors. The findings demonstrate the effectiveness of automated fabrication and characterization platforms in uncovering novel structure–property relationships, facilitating refinement of rational chemical design, and processing conditions, ultimately leading to new semiconducting materials.

automated fabrication and characterization↗
DOE OSTI2017

Enhancing the Efficiency of Organic Photovoltaics by a Photoactive Molecular Mediator

High boiling-point solvent additives, such as 1,8-diiodooctane, have been widely used to tune nanoscale phase morphology for increased efficiency in bulk heterojunction organic solar cells. However, liquid-state solvent additives remain in the active films for extended times and later migrate or evaporate from the films, leading to unstable device performance. Here, a solid-state photoactive molecular mediator, namely N(BAI) 3 , is reported that could be employed to replace the commonly used solvent additives to tune the morphology of bulk heterojunction films for improved device performance. The N(BAI) 3 mediator not only resides in the active films locally to fine tune the phase morphology, but also contributes to the additional absorption of the active films, leading to ~11% enhancement of power conversion efficiency of P3HT:PC 60 BM devices. Comparative studies are carried out to probe the nanoscale morphologies using grazing incidence wide-angle X-ray scattering and complementary neutron reflectometry. The use of 1 wt% N(BAI) 3 is found to effectively tune the packing of P3HT, presumably through balanced π-interactions endowed by its large conjugated π surface, and to promote the formation of a PC 60 BM-rich top interfacial layer. Finally, these findings open up a new way to effectively tailor the phase morphology by photoactive molecular mediators in organic photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2024

Ordered porous solid electrolyte structures, electrochemical devices with same, methods of making same

Provided are solid-state electrolyte structures. The solid-state electrolyte structures are ion-conducting materials. The solid-state electrolyte structures may be formed by 3-D printing using 3-D printable compositions. 3-D printable compositions may include ion-conducting materials and at least one dispersant, a binder, a plasticizer, or a solvent or any combination of one or more dispersant, binder, plasticizer, or solvent. The solid-state electrolyte structures can be used in electrochemical devices.

Wachsman, Eric D.↗
DOE OSTI2019

The impact of thermoelectric leg geometries on thermal resistance and power output

Thermoelectric devices enable direct, solid-state conversion of heat to electricity and vice versa. Rather than designing the shape of thermoelectric units or legs to maximize this energy conversion, the cuboid shape of these legs has instead remained unchanged in large part because of limitations in the standard manufacturing process. However, the advent of additive manufacturing (a technique in which freeform geometries are built up layer-by-layer) offers the potential to create unique thermoelectric leg geometries designed to optimize device performance. This work explores this new realm of novel leg geometry by simulating the thermal and electrical performance of various leg geometries such as prismatic, hollow, and layered structures. The simulations are performed for two materials, a standard bismuth telluride material found in current commercial modules and a higher manganese silicide material proposed for low cost energy conversion in high-temperature applications. The results include the temperature gradient and electrical potential developed across individual thermoelectric legs as well as thermoelectric modules with 16 legs. Even simple hollow and layered leg geometries result in larger temperature gradients and higher output powers than the traditional cuboid structure. As a result, the clear dependence of thermal resistance and power output on leg geometry provides compelling motivation to explore additive manufacturing of thermoelectric devices.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2016

White emission materials from glass doped with rare Earth ions: A review

Solid State Lighting (SSL) based devices are predicted to play a crucial role in the coming years. Development of W-LED, which have an edge over traditional lighting sources due to their compact size, higher reliability, shock resistance, interesting design possibilities, higher transparency and an extremely long lifetime. Over the fifteen trivalent lanthanide ions, Dy{sup 3+} ions doped glasses are most appropriate for white light generation because of the fact that it exhibits two intense emission bands corresponds to the {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} (magnetic dipole) and {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} (electric dipole) transitions at around 480-500 nm and 580-600 nm pertaining to blue and yellow regions respectively. In this work, the developments of Dy3+ doped in several glass structures for white emitting materials application have reviewed. Properties of Dy{sup 3+} doped in glasses were discussed for use as a solid state lighting materials application.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Ion beam irradiation as a tool to improve the ionic conductivity in solid polymer electrolyte systems

Solid polymer electrolytes (SPEs) have potential applications in solid state electronic and energy devices. The optimum conductivity of SPEs required for such applications is about 10{sup −1} – 10{sup −3} Scm{sup −1}, which is hard to achieve in these systems. It is observed that ionic conductivity of SPEs continuously increase with increasing concentration of inorganic salt in the host polymer. However, there is a critical concentration of the salt beyond which the conductivity of SPEs decreases due to the formation of ion pairs. In the present study, solid polymer thin films based on poly (ethylene oxide) (PEO) complexed with NaBr salt with different concentrations have been prepared and the concentration at which ion pair formation occurs in PEO{sub x}NaBr is identified. The microstructure of the SPE with highest ionic conductivity is modified by irradiating it with low energy O{sup +1} ion (100 keV) of different fluencies. It is observed that the ionic conductivity of irradiated SPEs increases by one order in magnitude. The increase in ionic conductivity may be attributed to the enhanced segmental motion of the polymer chains due to radiation induced micro structural modification.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Electrochemical Random-Access Memory: Progress, Perspectives, and Opportunities

Non-von Neumann computing using neuromorphic systems based on analogue synaptic and neuronal elements has emerged as a potential solution to tackle the growing need for more efficient data processing, but progress toward practical systems has been stymied due to a lack of materials and devices with the appropriate attributes. Recently, solid state electrochemical ion-insertion, also known as electrochemical random access memory (ECRAM) has emerged as a promising approach to realize the needed device characteristics. ECRAM is a three terminal device that operates by tuning electronic conductance in functional materials through solid-state electrochemical redox reactions. This mechanism can be considered as a gate-controlled bulk modulation of dopants and/or phases in the channel. Early work demonstrating that ECRAM can achieve nearly ideal analogue synaptic characteristics has sparked tremendous interest in this approach. More recently, the realization that electrochemical ion insertion can be used to tune the electronic properties of many types of materials including transition metal oxides, layered two-dimensional materials, organic and coordination polymers, and that the changes in conductance can span orders of magnitude has further attracted interest in ECRAM as the basis for analogue synaptic elements for inference accelerators as well as for dynamical devices that can emulate a wide range of neuronal characteristics for implementation in analogue spiking neural networks. At its core, ECRAM shares many fundamental aspects with rechargeable batteries, where ion insertion materials are used extensively for their ability to reversibly store charge and energy. Computing applications, however, present drastically different requirements: systems will require many millions of devices, scaled down to tens of nanometers, all while achieving reliable electronic-state tuning at scaled-up rates and endurances, and with minimal energy dissipation and noise. Further, in this review, we discuss the history, basic concepts, recent progress, as well as the challenges and opportunities for different types of ECRAM, broadly grouped by their primary mobile ionic charge carrier, including Li, protons, and oxygen vacancies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Guest Editorial Special Section on Advanced Medium-Voltage Power Electronics for Grid Interactive Applications

Medium-voltage power electronics (MVPE) plays essential roles in power grid modernization and links the MV distribution grid with low-voltage consumers and prosumers. Various MVPE devices, such as solid-state transformers or circuit breakers, inverter-based resources, power flow controllers, etc., bring the benefits of voltage conversion and power regulation in small footprint, power quality and efficiency improvements, and enhancements of grid controllability, flexibility, stability, and resilience. The MVPE also makes it possible for sustainable energy systems, such as solar/wind farms and energy storage generating facilities, to directly access to MV grids without multistage conversions. With their intrinsic intelligence and communications, MVPE enables many new smart grid functions and applications, e.g., dc interconnections and electric vehicle charging, which were not envisioned by traditional power grids otherwise. In addition, the integration of physical power processing units with cyber components forms a cyber-physical system, which is essential for long-term sustainability, development, and environmental preservation. Nonetheless, technical challenges on MVPE device reliability, scalable and efficient converter topologies, control stability, large-scale modeling and simulation, to name a few, need to be addressed and advanced to the next level. In conclusion, this Special Section on Advanced MV Power Electronics for Grid Interactive Applications in IEEE Transactions on Power Electronics (TPEL) provides an insight on some of the recent advances in MVPE and emerging challenges and potential solutions.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2012

Preemptible I/O Scheduling of Garbage Collection for Solid State Drives

Abstract Unlike hard disks, flash devices use out-of-update operations and they require a garbage collection (GC) process to reclaim invalid pages to create free blocks. This GC process is a major cause of performance degradation when running concurrently with other I/O operations as internal bandwidth is consumed to reclaim these invalid pages. The invocation of the GC process is generally governed by a low watermark on free blocks and other internal device metrics that different workloads meet at different intervals. This results in I/O performance that is highly dependent on workload characteristics. In this paper, we examine the GC process and propose a semi-preemptible GC scheme that allows GC processing to be preempted while pending I/O requests in the queue are serviced. Moreover, we further enhance flash performance by pipelining internal GC operations and merge them with pending I/O requests whenever possible. Our experimental evaluation of this semipreemptible GC scheme with realistic workloads demonstrate both improved performance and reduced performance variability. Write-dominant workloads show up to a 66.56% improvement in average response time with a 83.30% reduced variance in response time compared to the non-preemptible GC scheme. In addition, we explore opportunities of a new NAND flash device that supports suspend/resume commands for read, write and erase operations for fully preemptible GC. Our experiments with a fully preemptible GC enabled flash device show that request response time can be improved by up to 14.57% compared to semi-preemptible GC.

Flash Memory↗
DOE OSTI2015

Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO{sub 2} high-k stack

Electrical and optical properties of the solid state incandescent light emitting devices made of zirconium doped hafnium oxide high-k films with and without an embedded nanocrystalline CdSe layer on the p-type Si wafer have been studied. The broad band white light was emitted from nano sized conductive paths through the thermal excitation mechanism. Conductive paths formed from the dielectric breakdown have been confirmed from scanning electron microscopic and atomic force microscopic images and the secondary ion mass spectrometric elemental profiles. Si was diffused from the wafer to the device surface through the conductive path during the high temperature light emission process. There are many potential applications of this type of device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

GaN based nanorods for solid state lighting

In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Simultaneous oxygen and boron trifluoride functionalization of hexagonal boron nitride: a designer cathode material for energy storage

Covalent functionalization is a way to tune the electrochemical properties of hexagonal boron nitride (h-BN) monolayers. The wide bandgap insulator h-BN may become metallic conductor upon functionalization with strong oxidants, such as (fluorosulfonyl)oxy radicals (·OSO 2 F), as known since 1978 ( Bartlett et al in J Chem Soc Chem Commun 5:200, 1978), with electrical conductivity of 1.5 S/cm (Shen et al in J Solid State Chem 147:74, 1999) that greatly surpasses commercial cathode material Li x CoO 2 while retaining excellent ionic conductivity. Functionalized boron nitrides (FBN-s) have great potential for cathode applications in energy storage devices, for example, in solid-state batteries. While (fluorosulfonyl)oxy functionalization is unlikely to result in rechargeable cathodes, similarly to graphene fluoride (CF x ), some other FBN-s discussed here may do. In the present work, fluorene, oxygen and combined oxygen and boron trifluoride functionalizations are studied, on the basis of band structure calculations. Due to the open surfaces of FBN-s, fast ionic diffusion with Li, Na and Mg ions is possible, enabling batteries with voltages of 2.1–5.6 V, theoretical energy densities of 800–1200 Wh/kg and fast charge and discharge.

Chemistry↗
DOE OSTI2026

Surface-Functionalized, Two-Dimensional Polymer Electrochromic Layers as Ultrafast, Multi-State Infrared Optical Gates

Electrochromic devices have widespread application potential, but the currently available switching speeds limit broad real-world implementation of this technology. Here, we report surface-engineered two-dimensional polymers with ionophilic pores that offer unprecedented switching speeds in solid-state, two-terminal, electrochromic devices. In particular, we demonstrate that a crystalline donor–acceptor 2DP functionalized with ethylene glycol oligomers exhibits multistate infrared absorption that is 4× faster (t c = 320 ms) with 3× coloration efficiency (491 cm 2 C –1 ) compared to an alkyl functionalized 2DP constructed from the same chromophores. The functionalized nanoporous surfaces enable rapid switching in these materials under either oxidative or reductive conditions, allowing us to access a range of robust, stable optical responses in a single electrochromic layer. These attributes led us to leverage surface-functionalized 2DPs as multistate infrared logic gates. Collectively, this work demonstrates that surface engineering of nanoporous crystalline lattices is a promising approach to co-optimize the electronic and ionic conductivities required to achieve rapidly switchable electrochromic layers. Beyond speed and efficiency, the demonstration of multistate infrared characteristics shows that electrochromic frameworks are useful in integrated optoelectronic circuits. This positions surface-engineered 2DPs as improved electrochromic coatings and a new material platform for photonic information processing and adaptive devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗