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Results for “SWITCHING CIRCUIT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1965

Flux switching in multipath cores

Flux switching in multipath ferrimagnetic core materials - computational analyses for unloaded core, loaded core, core-diode-transistor binary counter, and loaded three-leg core

SWITCHING CIRCUIT↗
NASA NTRS1968

High-efficiency step-up regulator

Single-ended step-up regulator-chopper power supply /employing conventional chopper circuitry/ combines the advantages of the chopper and switching regulator circuits. Schematic of the power supply incorporating the step-up regulator is shown.

Lister, L. R.↗
NASA NTRS1969

Isolated, multiple-output voltage dc-to-dc converter

Isolated, multiple output voltage dc-to-dc converter provides power for television transmitter used in space vehicles. The isolation is accomplished by using a single-end switching transformer circuit. The converter is completely solid state.

Source record↗
NASA NTRS1969

Accurate nine-decade temperature-compensated logarithmic amplifier

Transistor-driven temperature-stable amplifier with logarithmic operating characteristics permits presentation of the entire range of the reactor without range switching. This circuit is capable of monitoring ion chamber currents over spans of 8 or 9 decades and is used in nuclear reactor instrumentation. Application is found in materials under ultrahigh vacuum.

Bobis, J. P.↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗