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At least 235 records · Page 13

Performance of Embedded Sensors in 3D Printed SiC

This report summarizes recent advances in embedding sensors in 3D printed silicon carbide (SiC) ceramic components under the Transformational Challenge Reactor (TCR) program. The additive manufacturing technologies developed under this program will enable fabrication of complex structures with embedded fuels and sensors. The sensors will be capable of characterizing fuel performance using spatially distributed measurements at the most strategic locations that would be otherwise inaccessible using conventional manufacturing techniques. While previous programmatic updates describe initial concepts for embedding sensors, materials selection, and initial characterization of the embedded sensors, the technology requires further demonstration, and quality-significant procedures must be established before the embedding technology is ready for adoption by industry. To this end, this report describes the most effective techniques that have been used to embed functional sensors in 3D printed components using a combination of binder-jet additive manufacturing and chemical vapor infiltration (CVI). A detailed procedure describes each step in the process and is available upon request. Molybdenum (Mo)-sheathed thermocouples have been successfully embedded in complex SiC components, and temperatures were monitored in situ during the embedding process. Post-embedding measurements showed no significant hysteresis, and characterization of the interface revealed qualitatively strong bonding around the entire perimeter of the sensor sheath. Distributed fiber-optic temperature sensors were able to briefly measure temperature profiles during CVI, but they ultimately failed prior to completion of the CVI run. The failure appears to be related to the fiber coating at temperatures close to 1,000°C. Future work will focus on irradiation testing of embedded thermocouples and other sheathed electrical sensors, as well as the identification of fiber-optic sensor coatings that can survive CVI.

42 ENGINEERING↗

High Power Test Results For A Cylindrical-Shell SiC Higher-Order-Mode DAMPER

The next high-current Electron Ion Collider (EIC) is a new accelerator to be built at Brookhaven National Laboratory (BNL) in collaboration with Thomas Jefferson National Accelerator Facility (TJNAF). In the EIC Electron Storage Ring (ESR), there will be beam currents up to 2.5 A, which will excite massive Higher-Order-Modes (HOM) power in the 17 single-cell 591 MHz Superconducting Radio Frequency (SRF) cavities. To damp the HOM power in the ESR SRF cavities is a challenge. A room temperature cylindrical shell shape Silicon Carbide (SiC) Beamline HOM Absorber (BLA) was chosen as the baseline design, due to its broadband and high-power capability, and previous demonstrations at other accelerator facilities, albeit at much lower power. Because the EIC BLA HOM power dissipation is significantly greater than the previous applications, it is imperative to carry out high power testing to determine the maximum device performance levels achievable for thermal transport, RF breakdown, and mechanical stress, prior to finalizing the design. A SiC HOM absorber with state-of-the-art geometry size was prototyped to verify shrink-fit technique, test outgassing rate, and high power handling capability. This paper presents the HOM damper’s prototyping and test results.

43 PARTICLE ACCELERATORS↗

High Efficiency Powertrain for Heavy Duty Trucks Using Silicon Carbide (SiC) Inverter

The objective of the High Efficiency Propulsion (HEP) project is to research, develop, and demonstrate life cycle cost-effective Class 8 battery electric vehicles utilizing an 800 V high efficiency and compact 250 kW continuous power SiC inverter designed to support the commercial operations of the high continuous loads and challenging shock/vibration environment of heavy-duty trucks with an electrified axle specifically designed for high performance and efficiency in battery-electric Class 8 trucks used in medium range (~250 miles) distribution, and compared to the baseline Peterbilt 579 electric truck fleet performance using an IGBT inverter. The project was split into 3 budget periods, with the first two being design and development focused, and the final one is an on-vehicle demonstration phase of the high efficiency SiC traction drive inverter with daily mileage accumulation.

33 ADVANCED PROPULSION SYSTEMS↗

Advancing SiC clad fuel performance model: bridging micro- and macro-scale models and experimental validation

This report presents a workflow for advancing fuel performance modeling of SiC composite cladding for light-water reactors by linking microscale, experimental data-informed finite element analysis with rod-scale fuel performance codes such as BISON. The workflow uses X-ray computed tomography (XCT) to capture the actual geometry and processing-induced defects of as-fabricated SiC composite tube specimens, particularly porosity and wall-thickness variations, and converts the segmented XCT volumes into image-based finite element meshes for high fidelity structural analysis.

Koyanagi, Takaaki [Oak Ridge National Laboratory (↗

Data for: Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide, provided an important step towards integration of the graphene-based system into active components in post-silicon micro- and nano-electronics. However, the exact atomic-scale structure and the complex bonding configurations of the first epitaxial graphene carbon layer remain an open problem. Our recent report has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the Cbuffer-SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present the direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Experimental STM and density functional theory modeling data were used in the preparation of figures in a published article in the Journal of Physical Chemistry Letters. Files related to the figures and supplementary materials in the article are present in this dataset in .txt format.

Condensed matter imaging↗

Data for: Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001)

Recently realized high-mobility semiconducting epitaxial graphene on silicon carbide, provided an important step towards integration of the graphene-based system into active components in post-silicon micro- and nano-electronics. However, the exact atomic-scale structure and the complex bonding configurations of the first epitaxial graphene carbon layer remain an open problem. Our recent report has shed new light on understanding this interface, where the external transverse electric field-dependent dynamic switching behavior of the Cbuffer-SiC bonds was observed. Here, using scanning tunneling microscopy and spectroscopy (STM and STS), we present the direct evidence of silicon (Si) vacancies at the interface and provide their distribution at the topmost reconstructed SiC(0001) layer. Experimental STM and density functional theory modeling data were used in the preparation of figures in a published article in the Journal of Physical Chemistry Letters. Files related to the figures and supplementary materials in the article are present in this dataset in .txt format.

Condensed matter imaging↗

High Char Yield and Flowable Preceramic Resin Enabled with the Monomer Functionalized SiC Particle

Ceramic matrix composites (CMCs) are used in diverse high temperature applications; however, manufacturing CMCs is highly time consuming and costly. We address this challenge by introducing a methodology for fabricating CMCs using an innovative composite preceramic resin. This composite resin contains 40% mass loading of SiC particles, which are chemically functionalized with a resin monomer. The functionalization facilitates a homogenous dispersion of SiC particles within the resin matrix, resulting in high char yield (83.6%) and enhanced impregnation efficiency through reduced melt viscosity, ~10 Pa.s for relevant shear rates. This breakthrough represents a significant stride towards developing a more economically viable and efficient manufacturing process for CMCs.

14 SOLAR ENERGY↗

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗

Micro-Tensile Properties of Irradiated AGR-2 TRISO Fuel Pyrolytic Carbon (PyC) and Silicon Carbide (SiC) Coatings

Tristructural isotropic (TRISO) coated nuclear fuel particles are emerging as a versatile option for new reactor designs, with the silicon carbide (SiC) layer crucial for retaining fission products. However, the mechanical properties of TRISO coating layers, particularly after irradiation, are not fully understood due to their small size and high radioactivity. Recent in situ micro-tensile testing of various TRISO layers aims to better understand the SiC layer's failure mechanisms, advancing TRISO fuel qualification. These micro-tensile results will be presented.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Coverage-dependent structures and thermodynamic stability of intercalated Gd layers beneath buffer-layer graphene on SiC(0001)

Electronic properties of two-dimensional (2D) materials are strongly influenced by their atomic arrangements, making the theoretically-aided characterization of experimentally-synthesized 2D structures crucial. Using first-principles density functional theory, we analyze nearly 200 configurations of intercalated Gd layers beneath buffer-layer graphene on SiC(0001) over a Gd coverage range of 0.01 < θ < 1.2. By fully relaxing selectively-constructed configurations at each coverage within a large, low-strain supercell, we determine the coverage dependence of the chemical potential for intercalated Gd structures. Thermodynamically-preferred configurations below θ ≈ 0.8 form single-atom-thick monolayers, while 3D-like or multilayer structures emerge beyond θ ≈ 0.9. Most structures are amorphous-like, including the configuration at the chemical potential minimum around θ ≈ 0.4. In contrast, a strongly stretched Gd(0001)-like monolayer at θ = 1/3 and a nearly perfect Gd(0001) monolayer at θ = 1 are significantly less favorable with 0.16 eV and 0.82 eV higher chemical potentials above the minimum, respectively. Furthermore, the graphene layer decoupled by intercalated Gd near the chemical potential minimum is significantly flatter compared to its morphology above intercalated 3D structures at higher coverages and nearly isolated Gd atoms in the lowest coverage region. In conclusion, these findings align with our experimental results and underscore the need for further research on this unique intercalated system, which holds significant potential for diverse applications.

36 MATERIALS SCIENCE↗

Evaluation of the effects of neutron irradiation on first-generation corrosion mitigation coatings on SiC for accident-tolerant fuel cladding

In this work, high purity SiC and SiC/SiC composites coated with commercial TiN, Cr, CrN, or CrN/Cr multilayer coatings were irradiated in Ar or flowing PWR water in the Massachusetts Institute of Technology Nuclear Reactor Laboratory (MITR). Irradiation in Ar was performed in the core. In the water environment, identical samples were placed in one of three different locations: in-core, providing exposure to neutron damage and radiolysis-affected water; above-core, where samples were exposed to radiolysis-affected water but not neutron damage, or outside of the core, where samples were exposed to the coolant water without the effects of radiation. Radiation in Ar revealed significant cracking of all but the TiN coatings, attributed to differential swelling between the coating and substrate. Lattice swelling was not observed in any of the coatings, but 0.2% void swelling was observed in the Cr coating. All of the coatings failed during water exposures in the core. Likewise, CrN/Cr spalled in each condition. Cr was protective, except under radiation damage as a result of cracking, and TiN severely degraded in the core with no coating was found following exposure. A SiC/coating ATF cladding system is anticipated to perform adequately following improvements in coating ductility and purity.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Oxide evolution on the SiC layer of TRISO particles during extended air oxidation

Tristructural isotropic (TRISO) fuel particles have been primarily developed for high-temperature gas-cooled nuclear reactors and can be subjected to oxidizing environments for extended periods in an off-normal accident scenario. Surrogate TRISO fuel particles were oxidized in air at 1,000 or 1,100 °C for up to 120 h. Here, the oxide scale morphology and thickness were studied via scanning electron microscopy, focused ion beam, and atomic force microscopy. TRISO particles oxidized at 1,100 °C exhibited a highly crystalline oxide scale, which led to significant cracking and irregularly shaped closed porosity, whereas those oxidized at 1,000 °C possessed a primarily amorphous oxide scale, which contained small, rounded internal pores and no larger defects. The observed phenomena deviated from the expected behavior based on models for oxide growth on flat-plate and fiber SiC. The oxidation kinetics of TRISO fuel particles in high-temperature air were investigated without mechanically deforming the surface and were analyzed with respect to oxide morphology.

36 MATERIALS SCIENCE↗

Impact damage of narrow silicon carbide (SiC) ceramics with and without environmental barrier coatings (EBCs) by various foreign object debris (FOD) simulants

The leading and trailing edges of turbine airfoils are highly susceptible to impact by foreign object debris (FOD) entrained in the gas stream of turbine engines. In this study, a narrow specimen geometry is implemented to study the FOD impact behavior of low curvature airfoil edges. Silicon carbide (SiC) ceramic specimens with and without an environmental barrier coating (EBC) are used as target materials. The EBC consists of an air plasma sprayed mullite topcoat (~ 166 µm) and silicon bond coat (~ 58 µm). Spherical (∅ 1.5 mm) FOD simulants of silicon nitride (Si3N4), partially stabilized zirconia (PSZ), and steel are used as impactors. Additionally, a modified gas gun is used to generate impact damage at normal incidence and velocities ranging between 300 to 400 m/s. In situ phase contrast X-ray radiographs, which render 2D representations of the internal transient damage, are captured during the impact experiments. Impactor hardness and toughness are found to primarily influence damage in the coating. Relative to wide specimens, the narrow specimens experience a greater level of cracking and this is postulated to result from reduced self-confinement. Irrespective of specimen geometry and impactor material type, limited cracking (i.e. enhanced shielding) is observed for the coated condition.

36 MATERIALS SCIENCE↗

Optimized AC/DC Dual Active Bridge Converter using Monolithic SiC Bidirectional FET (BiDFET) for Solar PV Applications

Grid interface power conversion systems for commercial, industrial and residential solar power generation are becoming ubiquitous due to the competitive cost of solar energy. The AC/DC dual active bridge (DAB) converter is an upcoming topology in industrial PV energy and energy storage applications, providing bidirectional power transfer and galvanic isolation. In this paper, the properties of a DAB-type converter are leveraged to propose a design optimization process. It can optimize the high-frequency RMS current, size of magnetic elements and zero-voltage-switching (ZVS) region of the converter. The resulting design is compared against that derived from a conventional approach. In addition, an algorithm to compute the harmonic currents at the DC and line frequency AC ports of the system is proposed, and the respective filter designs are presented. The optimized design of the AC/DC DAB converter is implemented using the newly developed, 1200 V, 46 mΩ, four quadrant, SiC-based monolithic bidirectional FETs (BiDFET). Experimental results from the 2.3 kW, 400V/277VRMS hardware prototype are finally presented to verify the design process.

Bidirectional isolated AC-DC conversion, solar ene↗

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.

4-Quadrant switch↗

Packaging Development for a 1200V SiC BiDFET Switch Using Highly Thermally Conductive Organic Epoxy Laminate

A novel 1.2 kV/10A, 4H-SiC monolithic, bidirectional switch has been developed for use in cycloconverter applications to facilitate high-frequency direct AC-to-AC power conversion and enables new power converter topologies. A new packaging solution, utilizing a 100 µm flexible polyimide organic laminate substrate is developed to mitigate thermo-mechanical stress during power cycling and enable smaller form factor and lower cost. Multiphysics simulations and static tests were conducted to show performance characterization of the module and compare it against metallic substrates. A new organic laminate epoxy resin composite dielectric (ERCD) is also evaluated for superior thermal performance and shows 63% reduction in junction to case resistance compared to DBC substrates.

Silicon Carbide, Bi-directional switch, BiDFET, MO↗

Improved Double Pulse Test for Accurate Dynamic Characterization of Medium Voltage SiC Devices

This article presents an improved double pulse test (DPT) for accurate dynamic characterization of the medium voltage (MV) silicon carbide device. The difference between low voltage (LV) and MV DPT setup grounding is first introduced, which results in different measurement considerations. Then, parasitic capacitances in the DPT and their impact on the DPT are discussed considering different grounding points and device connections. Approaches are proposed to minimize the impact of parasitic capacitances on DPT results. In addition, the impact of switching V-I timing alignment on the testing results is discussed, compared to that in the LV DPT; a V-I alignment approach is introduced for the MV DPT. A 10 kV/20 A SiC mosfet -based DPT is taken as an example of the improved DPT, and test results show that it can minimize the impact from parasitic and improve the accuracy of the device switching loss estimation.

42 ENGINEERING↗

Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/us common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

auxiliary power supply↗