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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

Halbig, Michael C.↗
NASA NTRS2004

Nitrogen and Carbon Isotopic Composition of Silicon Carbide in the CO3.0 Meteorite ALHA 77307, a NanoSIMS Study

Presolar grains have been identified in primitive members of all chondrite classes [1, 2]. The study of the isotopic compositions of presolar grains provides information on galactic evolution and nucleosynthesis in stars [3, 4], while the abundances and characteristics of presolar grains contain a record of thermal processing in the solar system [2, 5]. Much of the detailed work on presolar silicon carbide grains has focused on Murchison [e.g., 2] and Orgueil [4], but several other carbonaceous [6, 7], ordinary, and enstatite chondrites [8-11] have also been studied. This study investigates the isotopic composition of silicon carbide from the CO3.0 carbonaceous chondrites ALHA77307 and Colony. SiC is present in ALHA77307 at a matrix normalized abundance of ~8.8 ppm [5], which is approximately twice the abundance of Colony [5], but less than in CI chondrites and the matrices of CM and primitive ordinary and enstatite chondrites [3]. The abundances of SiC and other presolar grains in ALHA77307 seem to correlate with the degree of chemical processing that produced CO3 chondrites [2, 5]. This implies that the same nebular processing that produced the bulk composition of the CO3 chondrite class also modified the assemblage of known presolar grains [5]. To test whether all chondrite classes originated from the same reservoir of presolar dust it is necessary to look for primary differences, not related to thermal processing, between SiC in CO3 chondrites and other chondritic meteorites.

Smith, J. B.↗
NASA NTRS2014

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

silicon carbide (SiC)↗
NASA NTRS2004

Surface Figure Measurement at 20K: Silicon Carbide and Cesic Mirrors

This report presents the facility, methods, and results of testing cryogenically-cooled spherical mirrors, using standard phase-shifting interferometry, at the Goddard Space Flight Center (GSFC). Two mirrors were supplied to GSFC by the European Space Technology Center, so that GSFC could render a second, independent cryo-measurement of their surface figures at 20K. These mirrors, produced by Galileo Avionica and its partners, demonstrate the technology of silicon carbide and SiC-composite lightweighted mirrors, designed for high accuracy (10 nm rms surface figure error) at both room temperature and 20K. The two mirrors provided for testing at GSFC include one made of sintered silicon carbide (mirror blank by Bettini), and a second made of the C/Si/SiC composite known as Cesic (supplied by ECM). Both mirrors are f/2 spheres with 150 mm clear aperture, and with integral mounts. At GSFC, the mirrors will be measured first at at room temperature, making use of standard techniques, with a predicted uncertainty of 2 nm. Then each mirror will be tested in the cryostat, down to 20K: first freely supported and, second, mounted to a Cesic plate that models a Cesic optical bench. The uncertainty of the resultant surface figure error is predicted to be about 5 nm rms. Details of the uncertainty budget are discussed in a related poster. GSFC's techniques and results can be usefully compared to the measurements performed on the same two mirrors by and for Galileo Avionica, who used a somewhat different test configuration and alignment approach.

Blake, Peter↗
NASA NTRS1998

Silicon Carbide Mixers Demonstrated to Improve the Interference Immunity of Radio-Based Aircraft Avionics

Concern over the interference of stray radiofrequency (RF) emissions with key aircraft avionics is evident during takeoff and landing of every commercial flight when the flight attendant requests that all portable electronics be switched off. The operation of key radio-based avionics (such as glide-slope and localizer approach instruments) depends on the ability of front-end RF receivers to detect and amplify desired information signals while rejecting interference from undesired RF sources both inside and outside the aircraft. Incidents where key navigation and approach avionics malfunction because of RF interference clearly represent an increasing threat to flight safety as the radio spectrum becomes more crowded. In an initial feasibility experiment, the U.S. Army Research Laboratory and the NASA Lewis Research Center recently demonstrated the strategic use of silicon carbide (SiC) semiconductor components to significantly reduce the susceptibility of an RF receiver circuit to undesired RF interference. A pair of silicon carbide mixer diodes successfully reduced RF interference (intermodulation distortion) in a prototype receiver circuit by a factor of 10 (20 dB) in comparison to a pair of commercial silicon-based mixer diodes.

Neudeck, Philip G.↗
NASA NTRS1993

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Gokoglu, S. A.↗
NASA NTRS2013

Silicon Carbide Telescope Investigations for the LISA Mission

Space-based gravitational wave (GW) detectors are conceived to detect GWs in the low frequency range (mili-Hertz) by measuring the distance between free-falling proof masses in spacecraft (SC) separated by 5 Gm. The reference in the last decade has been the joint ESA-NASA mission LISA. One of the key elements of LISA is the telescope since it simultaneously gathers the light coming from the far SC (approximately or equal to 100 pW) and expands, collimates and sends the outgoing beam (2 W) to the far SC. Demanding requirements have been imposed on the telescope structure: the dimensional stability of the telescope must be approximately or equal to 1pm Hz(exp−1/2) at 3 mHz and the distance between the primary and the secondary mirrors must change by less than 2.5 micrometer over the mission lifetime to prevent defocussing. In addition the telescope structure must be light, strong and stiff. For this reason a potential on-axis telescope structure for LISA consisting of a silicon carbide (SiC) quadpod structure has been designed, constructed and tested. The coefficient of thermal expansion (CTE) in the LISA expected temperature range has been measured with a 1% accuracy which allows us to predict the shrinkage/expansion of the telescope due to temperature changes, and pico-meter dimensional stability has been measured at room temperature and at the expected operating temperature for the LISA telescope (around -6[deg]C). This work is supported by NASA Grants NNX10AJ38G and NX11AO26G,

carbide↗
NASA NTRS2007

Genesis Silicon Carbide Concentrator Target 60003 Preliminary Ellipsometry Mapping Results

The Genesis concentrator was custom designed to focus solar wind ions primarily for terrestrial isotopic analysis of O-17/O-16 and O-18/O-16 to +/-1%, N-15/N-14 to +/-1%, and secondarily to conduct elemental and isotopic analysis of Li, Be, and B. The circular 6.2 cm diameter concentrator target holder was comprised of four quadrants of highly pure semiconductor materials that included one amorphous diamond-like carbon, one C-13 diamond, and two silicon carbide (SiC). The amorphous diamond-like carbon quadrant was fractured upon impact at Utah Test and Training Range (UTTR), but the remaining three quadrants survived fully intact and all four quadrants hold an important collection of solar wind. The quadrants were removed from the target holder at NASA Johnso n Space Center Genesis Curation Laboratory in April 2005, and have been housed in stainless steel containers under continual nitrogen purge since time of disintegration. In preparation for allocation of a silicon carbide target for oxygen isotope analyses at UCLA, the two SiC targets were photographed for preliminary inspection of macro particle contamination from the hard non-nominal landing as well as characterized by spectroscopic ellipsometry to evaluate thin film contamination. This report is focused on Genesis SiC target sample number 60003.

Calaway, M. J.↗
NASA NTRS1991

Second harmonic conversion in cubic silicon carbide at 1.06 micron

This letter describes second harmonic conversion in cubic silicon carbide (beta-SiC) at a wavelength of 1.06 micron. Epitaxial layers of beta-SiC formed by vapor phase growth on silicon are indeed birefringent, and thus phase matchable. Phase-matched films of beta-SiC have respectable conversion efficiencies even in the presence of adsorption at 532 nm. The measured value of the effective second order nonlinear susceptibility for beta-SiC is chi super (2) eff = 1.05 +/- 0.3 x 10 exp -9 esu.

Harris, G. L.↗
NASA NTRS1990

Meteoritic silicon carbide - Pristine material from carbon stars

All five gases in interstellar silicon carbide grains have grossly nonsolar isotopic and elemental abundances that vary with grain size but are strikingly similar to calculated values for the helium-burning shell of low-mass carbon stars. Apparently these grains formed in carbon-star envelopes, and were impregnated with noble gas ions from a stellar wind. Meteoritic SiC provides a detailed record of nuclear and chemical processes in carbon stars.

Lewis, Roy S.↗
NASA NTRS2000

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

A process for producing polycrystalline silicon carbide includes heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Barnard, Thomas Duncan↗
NASA NTRS2001

Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

Barnard, Thomas Duncan↗
NASA NTRS1988

Ceramic Fabric Coated With Silicon Carbide

Material used as high-temperature shell. Ceramic fabric coated with silicon carbide (SiC) serves as tough, heat-resistant covering for other refractory materials. Developed to protect reusable insulating tiles on advanced space transportation systems. New covering makes protective glaze unnecessary. Used on furnace bricks or on insulation for engines.

Riccitiello, S. R.↗
NASA NTRS1989

Improved silicon carbide for advanced heat engines

The development of high strength, high reliability silicon carbide parts with complex shapes suitable for use in advanced heat engines is studied. Injection molding was the forming method selected for the program because it is capable of forming complex parts adaptable for mass production on an economically sound basis. The goals were to reach a Weibull characteristic strength of 550 MPa (80 ksi) and a Weibull modulus of 16 for bars tested in four-point loading. Statistically designed experiments were performed throughout the program and a fluid mixing process employing an attritor mixer was developed. Compositional improvements in the amounts and sources of boron and carbon used and a pressureless sintering cycle were developed which provided samples of about 99 percent of theoretical density. Strengths were found to improve significantly by annealing in air. Strengths in excess of 550 MPa (80 ksi) with Weibull modulus of about 9 were obtained. Further improvements in Weibull modulus to about 16 were realized by proof testing. This is an increase of 86 percent in strength and 100 percent in Weibull modulus over the baseline data generated at the beginning of the program. Molding yields were improved and flaw distributions were observed to follow a Poisson process. Magic angle spinning nuclear magnetic resonance spectra were found to be useful in characterizing the SiC powder and the sintered samples. Turbocharger rotors were molded and examined as an indication of the moldability of the mixes which were developed in this program.

Whalen, Thomas J.↗
NASA NTRS1991

Synthesis of multifilament silicon carbide fibers by chemical vapor deposition

A process for development of clean silicon carbide fiber with a small diameter and high reliability is presented. An experimental evaluation of operating conditions for SiC fibers of good mechanical properties and devising an efficient technique which will prevent welding together of individual filaments are discussed. The thermodynamic analysis of a different precursor system was analyzed vigorously. Thermodynamically optimum conditions for stoichiometric SiC deposit were obtained.

Revankar, Vithal↗
NASA NTRS1998

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

DeAnna, Russell G.↗