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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Total Dose Effects on Single Event Transients in Linear Bipolar Systems

Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.

Buchner, Stephen↗
NASA NTRS2012

CREME96 and Related Error Rate Prediction Methods

Predicting the rate of occurrence of single event effects (SEEs) in space requires knowledge of the radiation environment and the response of electronic devices to that environment. Several analytical models have been developed over the past 36 years to predict SEE rates. The first error rate calculations were performed by Binder, Smith and Holman. Bradford and Pickel and Blandford, in their CRIER (Cosmic-Ray-Induced-Error-Rate) analysis code introduced the basic Rectangular ParallelePiped (RPP) method for error rate calculations. For the radiation environment at the part, both made use of the Cosmic Ray LET (Linear Energy Transfer) spectra calculated by Heinrich for various absorber Depths. A more detailed model for the space radiation environment within spacecraft was developed by Adams and co-workers. This model, together with a reformulation of the RPP method published by Pickel and Blandford, was used to create the CR ME (Cosmic Ray Effects on Micro-Electronics) code. About the same time Shapiro wrote the CRUP (Cosmic Ray Upset Program) based on the RPP method published by Bradford. It was the first code to specifically take into account charge collection from outside the depletion region due to deformation of the electric field caused by the incident cosmic ray. Other early rate prediction methods and codes include the Single Event Figure of Merit, NOVICE, the Space Radiation code and the effective flux method of Binder which is the basis of the SEFA (Scott Effective Flux Approximation) model. By the early 1990s it was becoming clear that CREME and the other early models needed Revision. This revision, CREME96, was completed and released as a WWW-based tool, one of the first of its kind. The revisions in CREME96 included improved environmental models and improved models for calculating single event effects. The need for a revision of CREME also stimulated the development of the CHIME (CRRES/SPACERAD Heavy Ion Model of the Environment) and MACREE (Modeling and Analysis of Cosmic Ray Effects in Electronics). The Single Event Figure of Merit method was also revised to use the solar minimum galactic cosmic ray spectrum and extended to circular orbits down to 200 km at any inclination. More recently a series of commercial codes was developed by TRAD (Test & Radiations) which includes the OMERE code which calculates single event effects. There are other error rate prediction methods which use Monte Carlo techniques. In this chapter the analytic methods for estimating the environment within spacecraft will be discussed.

Adams, James H., Jr.↗
NASA NTRS2017

An Improved SEL Test of the ADV212 Video Codec

Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latchup (SEL) protection circuitry.

Single-event effect (SEE); microelectronic devices↗
NASA NTRS2017

An Improved SEL Test of the ADV212 Video Codec

Single-event effect (SEE) test data is presented on the Analog Devices ADV212. Focus is given to the test setup used to improve data quality and validate single-event latch-up (SEL) protection circuitry.

Single-event effect (SEE); microelectronic devices↗
NASA NTRS1997

An Examination of Environment Perturbation Effects on Single Event Upset Rates

This paper presents an analysis of the sensitivity of single event upset (SEU) rate predictions to changes in the direct ionization-inducing environment. An examination based on the nature of the SEU rate equation is presented for the case in which the perturbation is constant across varying particle linear energy transfer (LET). It is shown that the relative variation in SEU rate is equal to the relative perturbation in flux. Results are also presented for the case in which the environment perturbations exist in small LET bins. Through this analysis it is shown that the relative variation in expected SEU rate is equal to that in flux only for the LET regime in which the product of the cross section and differential flux is maximum.

Gates, Michele M.↗
NASA NTRS2010

Localized Triple Modular Redundancy vs. Distributed Triple Modular Redundancy on a ProASIC3E Reprogrammable FPGA

Field programmable gate arrays (FPGA) are used in every space application. Currently, most space flight applications use radiation hardened (RH) FPGAs, which are very expensive. There is a desire to use cheaper, commercial off the shelf reprogrammable FPGAs, which are more susceptible to radiation effects known as single-event effects (SEE). The RH parts have SEE and total ionizing dose (TID) hardened elements pre-integrated into the part. This means that the designer does not need to implement any hardening techniques while configuring the device. The COTS parts on the other hand must be mitigated by design in order to insure any form of mitigation. The design techniques this project examines concern the use of localized triple modular redundancy (LTMR) and distributed triple modular redundancy (DTMR). LTMR triples every flip flop in the device architecture while DTMR triples everything except for the global routes (clocks, resets, and enables). The testing was performed on a ProASIC3E FPGA at the Texas A&M cyclotron facility. Two design architectures were used: shift registers and counters, both with LTMR and DTMR mitigation techniques. The test results prove that DTMR is more effective at reducing SEE than LTMR. We also determined that there was not a significant difference between the use of shift registers and counters for test purposes. More testing is required to obtain additional linear energy transfer values for each architecture and mitigation technique in order to determine the most cost-effective method of SEE mitigation.

McGuffey, Alex↗
NASA NTRS2011

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Adell, Philippe C.↗
NASA NTRS2016

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Single Event Effects (SEE)↗
NASA NTRS2019

Proton Testing of AMD e9173 GPU

Single-Event Effects (SEE) testing was conducted on the AMD e9173 Graphics Processor Unit (GPU). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center.

Single-Event Effects (SEE)↗
NASA NTRS1989

Effects of space radiation on electronic microcircuits

The single event effects or phenomena (SEP), which so far have been observed as events falling on one or another of the SE classes: Single Event Upset (SEU), Single Event Latchup (SEL) and Single Event Burnout (SEB), are examined. Single event upset is defined as a lasting, reversible change in the state of a multistable (usually bistable) electronic circuit such as a flip-flop or latch. In a computer memory, SEUs manifest themselves as unexplained bit flips. Since latchup is in general caused by a single event of short duration, the single event part of the SEL term is superfluous. Nevertheless, it is used customarily to differentiate latchup due to a single heavy charged particle striking a sensitive cell from more ordinary kinds of latchup. Single event burnout (SEB) refers usually to total instantaneous failure of a power FET when struck by a single particle, with the device shorting out the power supply. An unforeseen failure of these kinds can be catastrophic to a space mission, and the possibilities are discussed.

Kolasinski, W. A.↗
NASA NTRS2017

Tutorial: Radiation Effects in Electronic Systems

This tutorial presentation will give an overview of radiation effects in electrical, electronic, and electromechanical (EEE) components as it applies to civilian space systems of varying size and complexity. The natural space environment presents many unique threats to electronic systems regardless of where the systems operate from low-Earth orbit to interplanetary space. The presentation will cover several topics, including: an overview and introduction to the applicable space radiation environments common to a broad range of mission designs; definitions and impacts of effects due to impinging particles in the space environment e.g., total ionizing dose (TID), total non-ionizing dose (TNID), and single-event effects (SEE); and, testing for and evaluation of TID, TNID, and SEE in EEE components.

total non-ionizing dose (TNID)↗
NASA NTRS2017

Current Status and Future Challenges in Risk-Based Radiation Engineering

This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.

Total Ionizing Dose (TID)↗
NASA NTRS1991

Assessment of environmental effects on Space Station Freedom Electrical Power System

Analyses of EPS (electrical power system) interactions with the LEO (low earth orbit) environment are described. The results of these analyses will support EPS design so as to be compatible with the natural and induced environments and to meet power, lifetime, and performance requirements. The environmental impacts to the Space Station Freedom EPS include aerodynamic drag, atomic oxygen erosion, ultraviolet degradation, VXB effect, ionizing radiation dose and single event effects, electromagnetic interference, electrostatic discharge, plasma interactions (ion sputtering, arcing, and leakage current), meteoroid and orbital debris threats, thermal cycling effects, induced current and voltage potential differences in the SSF due to induced electric field, and contamination degradation.

Lu, Cheng-Yi↗