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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13

An Examination of Heavy Ion-Induced Persistent Visual Error Signatures in an Electronic Display Driver Integrated Circuit

Heavy ion irradiation of a display driver integrated circuit (DDIC) was performed, and persistent visual error signatures were captured. Based on the heavy ion results, error signatures were localized to configuration registers motivate potential mitigation techniques and observations relating to single event effect susceptibility. DDICs serve as an integral component of integrated display systems that will require the development of single event effects test methodologies in anticipation of extensive use in crewed spacecrafts outside of the Earth’s geomagnetic protection.

Electronic Displays↗

Space Radiation Effects on SiC Power Device Reliability

Heavy-ion radiation can result in silicon carbide power device degradation and/or catastrophic failure. Test procedures and data interpretation must consider the impact that heavy-ion induced off-state leakage current increases will have on subsequent single-event effect susceptibility and testability. On orbit, reliable performance in the presence of increased off-state leakage currents due to cumulative ion-induced non-catastrophic single-event effects must be assured over the mission lifetime. This work presents a large body of heavy-ion test data for different diode, power MOSFET, and JFET devices. Susceptibility to single-event effects is compared between SiC and Si power devices. Initial recommendations on heavy-ion radiation test methods for silicon carbide power devices are made and radiation hardness assurance is discussed with the goal of moving one step closer to reliably getting this technology off the ground into a broad array of spacecraft and instruments that will benefit from its unique capabilities.

diode↗

Development of COTS ADC SEE Test System for the ATLAS LArCalorimeter Upgrade

Radiation-tolerant, high speed, high density and low power commercial off-the-shelf (COTS) analog-to-digital converters (ADCs) are planned to be used in the upgrade to the Liquid Argon (LAr) calorimeter front end (FE) trigger readout electronics. Total ionization dose (TID) and single event effect (SEE) are two important radiation effects which need to be characterized on COTS ADCs. In our initial TID test, Texas Instruments (TI) ADS5272 was identified to be the top performer after screening a total 17 COTS ADCs from different manufacturers with dynamic range and sampling rate meeting the requirements of the FE electronics. Another interesting feature of ADS5272 is its 6.5 clock cycles latency, which is the shortest among the 17 candidates. Based on the TID performance, we have designed a SEE evaluation system for ADS5272, which allows us to further assess its radiation tolerance. In this paper, we present a detailed design of ADS5272 SEE evaluation system and show the effectiveness of this system while evaluating ADS5272 SEE characteristics in multiple irradiation tests. According to TID and SEE test results, ADS5272 was chosen to be implemented in the full-size LAr Trigger Digitizer Board (LTDB) demonstrator, which will be installed on ATLAS calorimeter during the 2014 Long Shutdown 1 (LS1).

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Decline in Radiation Hardened Microcircuit Infrastructure

Two areas of radiation hardened microcircuit infrastructure will be discussed: 1) The availability and performance of radiation hardened microcircuits, and, and 2) The access to radiation test facilities primarily for proton single event effects (SEE) testing. Other areas not discussed, but are a concern include: The challenge for maintaining radiation effects tool access for assurance purposes, and, the access to radiation test facilities primarily for heavy ion single event effects (SEE) testing. Status and implications will be discussed for each area.

performance of radiation hardened microcircuits↗

Updated Electronic Testbed System

As we continue to advance in exploring space frontiers, technology must also advance. The need for faster data recovery and data processing is crucial. In this, the less equipment used, and lighter that equipment is, the better. Because integrated circuits become more sensitive in high altitude, experimental verification and quantification is required. The Center for Applied Radiation Research (CARR) at Prairie View A&M University was awarded a grant by NASA to participate in the NASA ER-2 Flight Program, the APEX balloon flight program, and the Student Launch Program. These programs are to test anomalous errors in integrated circuits due to single event effects (SEE). CARR had already begun experiments characterizing the SEE behavior of high speed and high density SRAM's. The research center built a error testing system using a PC-104 computer unit, an Iomega Zip drive for storage, a test board with the components under test, and a latchup detection and reset unit. A test program was written to continuously monitor a stored data pattern in the SRAM chip and record errors. The devices under test were eight 4Mbit memory chips totaling 4Mbytes of memory. CARR was successful at obtaining data using the Electronic TestBed System (EBS) in various NASA ER-2 test flights. These series of high altitude flights of up to 70,000 feet, were effective at yielding the conditions which single event effects usually occur. However, the data received from the series of flights indicated one error per twenty-four hours. Because flight test time is very expensive, the initial design proved not to be cost effective. The need for orders of magnitude with more memory became essential. Therefore, a project which could test more memory within a given time was created. The goal of this project was not only to test more memory within a given time, but also to have a system with a faster processing speed, and which used less peripherals. This paper will describe procedures used to build an updated Electronic Testbed System.

Brewer, Kevin L.↗

Single Event Upset Effects on the Clementine Solid State Data Recorder

The sensitivity of the Clementine 2.1 Gbit Solid State Data Recorder (SSDR) to single event upsets was characterized in ground tests. Subsequent in-situ measurements of the ambient radiation environment by experiments on-board Clementine permitted evaluation of the ability of models of the single event phenomenon in the SSDR to be tested using actual data. Initial results from the analysis reveal a nearly constant background upset rate of ~71 bit flips/day for the SSDR. There is no obvious correlation with a solar proton event recorded by Clementine and several other spacecraft on 20-21 February 1994, indicating that the SSDR was not sensitive to protons. The constant rate is thus interpreted as being a function of the Galactic Cosmic Ray heavy ion environment. A pronounced lunar orbit altitude dependence has also been identified in the data though the cause has not yet been unambiguously identified.

Clementine↗

On the use of Lineal Energy Measurements to Estimate Linear Energy Transfer Spectra

This paper examines the error resulting from using a lineal energy spectrum to represent a linear energy transfer spectrum for applications in the space radiation environment. Lineal energy and linear energy transfer spectra are compared in three diverse but typical space radiation environments. Different detector geometries are also studied to determine how they affect the error. LET spectra are typically used to compute dose equivalent for radiation hazard estimation and single event effect rates to estimate radiation effects on electronics. The errors in the estimations of dose equivalent and single event rates that result from substituting lineal energy spectra for linear energy spectra are examined. It is found that this substitution has little effect on dose equivalent estimates in interplanetary quiet-time environment regardless of detector shape. The substitution has more of an effect when the environment is dominated by solar energetic particles or trapped radiation, but even then the errors are minor especially if a spherical detector is used. For single event estimation, the effect of the substitution can be large if the threshold for the single event effect is near where the linear energy spectrum drops suddenly. It is judged that single event rate estimates made from lineal energy spectra are unreliable and the use of lineal energy spectra for single event rate estimation should be avoided.

Adams, David A.↗

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

NAND flash memory↗

Multiscale System Modeling of Single-Event-Induced Faults in Advanced Node Processors

Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor’s scope makes physically correct modeling computationally intractable. Without useful models, presilicon evaluation of fault-tolerance approaches becomes impossible. To incorporate accurate transistor-level effects at a system scope, we present a multiscale simulation framework. Charge collection at the 1) device level determines 2) circuit-level transient duration and state-upset likelihood. Circuit effects, in turn, impact 3) register-transfer-level architecture-state corruption visible at 4) the system level. Furthermore, the physically accurate effects of SEEs in large-scale systems, executed on a high-performance computing (HPC) simulator, could be used to drive cross-layer radiation hardening by design. We demonstrate the capabilities of this model with two case studies. First, we determine a D flip-flop’s sensitivity at the transistor level on 14-nm FinFet technology, validating the model against published cross sections. Second, we track and estimate faults in a microprocessor without interlocked pipelined stages (MIPS) processor for Adams 90% worst case environment in an isotropic space environment.

42 ENGINEERING↗

The Impact on Space Radiation Requirements and Effects on ASIMS

The evolution of highly miniaturized electronic and mechanical systems will be accompanied by new problems and issues regarding the radiation response of these systems in the space environment. In this paper we discuss some of the more prominent radiation problems brought about by miniaturization. For example, autonomous micro-spacecraft will require large amounts of high density memory, most likely in the form of stacked, multichip modules of DRAM's, that must tolerate the radiation environment. However, advanced DRAM's (16 to 256 Mbit) are quite susceptible to radiation, particularly single event effects, and even exhibit new radiation phenomena that were not a problem for older, less dense memory chips. Another important trend in micro-spacecraft electronics is toward the use of low-voltage microelectronic systems that consume less power. However, the reduction in operating voltage also caries with it an increased susceptibility to radiation. In the case of application specific integrated microcircuits (ASIM's), advanced devices of this type, such as high density field programmable gate arrays (FPGA's) exhibit new single event effects (SEE), such as single particle reprogramming of anti-fuse links. New advanced bipolar circuits have been shown recently to degrade more rapidly in the low dose rate space environment than in the typical laboratory total dose radiation test used to qualify such devices. Thus total dose testing of these parts is no longer an appropriately conservative measure to be used for hardness assurance. We also note that the functionality of micromechanical Si-based devices may be altered due to the radiation-induced deposition of charge in the oxide passivation layers.

Barnes, C.↗

Analyzing System on A Chip Single Event Upset Responses using Single Event Upset Data, Classical Reliability Models, and Space Environment Data

We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data. We expect to relate SEU behavior to system performance requirements. Our proposed methodology will provide better prediction of SEU responses in harsh radiation environments with confidence metrics. single event upset (SEU), single event effect (SEE), field programmable gate array devises (FPGAs)

single event effect (SEE)↗

Validation techniques for fault emulation of SRAM-based FPGAs

A variety of fault emulation systems have been created to study the effect of single-event effects (SEEs) in static random access memory (SRAM) based field-programmable gate arrays (FPGAs). These systems are useful for augmenting radiation-hardness assurance (RHA) methodologies for verifying the effectiveness for mitigation techniques; understanding error signatures and failure modes in FPGAs; and failure rate estimation. For radiation effects researchers, it is important that these systems properly emulate how SEEs manifest in FPGAs. If the fault emulation systems does not mimic the radiation environment, the system will generate erroneous data and incorrect predictions of behavior of the FPGA in a radiation environment. Validation determines whether the emulated faults are reasonable analogs to the radiation-induced faults. In this study we present methods for validating fault emulation systems and provide several examples of validated FPGA fault emulation systems.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗

Radiation 101: Effects on Hardware and Robotic Systems

We present basic information on different types of radiation effects, including total ionizing dose, displacement damage, and single-event effects. The content is designed to educate space weather professionals, space operations professionals, and other science and engineering stakeholders.

radiation effects↗

Radiation 101: Effects on Hardware and Robotic Systems

We present basic information on different types of radiation effects, including total ionizing dose, displacement damage, and single-event effects. The content is designed to educate space weather professionals, space operations professionals, and other science and engineering stakeholders.

non-ionizing energy loss (NIEL)↗

Report from the Inaugural Meeting on the Opportunities at the SEEMS Facility June 11-12, 2019

The Inaugural Meeting on the Opportunities at the Single Event Effects—Muon Spectroscopy (SEEMS) facility was held June 11–12, 2019, at Oak Ridge National Laboratory (ORNL). Capabilities of the SEEMS facility concept were reviewed, with emphasis on particle beams for single event effects (SEE) testing of electronic devices (integrated circuits) and systems—a topic of growing interest and concern in aerospace avionics, satellites, supercomputing, autonomous cars, unmanned aerial vehicles and more. Participants from these industries and their regulators attended. A clear consensus on the growing and urgent need for SEE test capabilities like those offered by SEEMS was expressed. Subsequent to the meeting, letters of support for SEEMS were sent by The Boeing Company and Honeywell to the ORNL Laboratory Director, Thomas Zacharia.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗