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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

First Results from Nb3Sn Coatings of 2.6 GHz Nb SRF Cavities Using DC Cylindrical Magnetron Sputtering System

A DC cylindrical magnetron sputtering system has been commissioned and operated to deposit Nb3Sn onto 2.6 GHz Nb SRF cavities. After optimizing the deposition conditions in a mock-up cavity, Nb-Sn films are deposited first on flat samples by multilayer sequential sputtering of Nb and Sn, and later annealed at 950 {\deg}C for 3 hours. X-ray diffraction of the films showed multiple peaks for the Nb3Sn phase and Nb (substrate). No peaks from any Nb3Sn compound other than Nb3Sn were detected. Later three 2.6 GHz Nb SRF cavities are coated with ~1 $\mu$m thick Nb3Sn. The first Nb3Sn coated cavity reached close to Eacc = 8 MV/m, demonstrating a quality factor Q0 of 3.2 x 108 at Tbath = 4.4 K and Eacc = 5 MV/m, about a factor of three higher than that of Nb at this temperature. Q0 was close to 1.1 x 109, dominated by the residual resistance, at 2 K and Eacc = 5 MV/m. The Nb3Sn coated cavities demonstrated Tc in the range of 17.9 - 18 K. Here we present the commissioning experience, system optimization, and the first results from the Nb3Sn fabrication on flat samples and SRF cavities.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Exploring the relationship between deposition method, microstructure, and performance of Nb/Si-based superconducting coplanar waveguide resonators

Superconducting quantum circuits (SQC) are one of the most promising hardware platforms for quantum computing, yet their performance is currently limited by the presence of various structural defects inside the circuit's structure. Despite impressive progress in the past decade, a precise understanding of the origin of these defects from various fabrication processes and their impact on coherence is still lacking. Here, in this study, we performed a comprehensive investigation on the microstructure, superconductivity, and resonator quality factor of Nb films deposited by high-power impulse magnetron sputtering (HiPIMS) and direct current (DC) magnetron sputtering. A suite of characterization techniques, including electron microscopy with spectroscopy, secondary ion mass spectrometry, magneto-optical microscopy, and pump-probe reflectivity spectroscopy is used. We reveal that niobium (Nb) resonators fabricated using HiPIMS exhibit a smaller average grain size, thicker surface oxide with larger thickness variations (rougher surface), and a thicker amorphous Nb/Si interface layer compared to samples deposited by DC sputtering. We identified that the amorphous Nb oxides (mainly located at the Nb surface and along the grain boundaries) and Nb-Si amorphous layers (at the Nb/Si interface) are major and potential sources of two-level system (TLS), while off-stochiometric oxides and suboxides of Nb close to the surface, crystalline defects (i.e., dislocations at grain boundary, point defects introduced during deposition) are main contributors of non-TLS sources. Our findings clarify the relationship between different defects and coherence loss mechanisms, highlighting the importance of material microstructure control on performance optimization in SQC.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Experimental evaluation of direct current magnetron sputtered and high-power impulse magnetron sputtered Cr coatings on SiC for light water reactor applications

Two types of physical vapor deposition Cr coatings were deposited on chemical vapor deposited SiC coupons using conventional direct current magnetron sputtering (DCMS) and high-power impulse magnetron sputtering (HiPIMS) to mitigate the corrosion of SiC, an advanced fuel and structural material in light water nuclear reactor cores. Coating microstructure was characterized using scanning electron microscopy and scanning transmission election microscopy. X-ray diffraction analysis was conducted for phase identification and qualitative analysis of residual stresses. The mechanical integrity of the coatings was evaluated using scratch testing, micro-indentation, and nano-indentation tests. Additionally, the microstructure of the DCMS coating consisted of fine columnar grains with nanoscale intercolumnar channels, while the HiPIMS microstructure was denser and free of any columnar defects. The DCMS coating showed a small tensile residual stress, while the HiPIMS coating was under compressive stress. Both types of coatings showed good mechanical integrity in terms of ductility and adhesion to the substrate. Corrosion performance of the coatings was assessed with a 30-day high temperature water autoclave test. Both types of coatings formed a protective Cr 2 O 3 surface layer 20-30 nm thick during the autoclave test. In the DCMS coating, the columnar defects provided permeation pathways for water penetration resulting in oxide formation in the intercolumnar regions in the interior of the coating. Overall, both types of Cr coatings offer promise for the mitigation of hydrothermal corrosion of SiC in light water reactor operating environments.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effects of substrate bias and tilt on magnetron sputtered boron carbide films

Maintaining high density and good mechanical properties at oblique angles for magnetron sputtered amorphous boron carbide films remains a challenge. In this study, we investigate the effect of the substrate bias on density, residual stress, mechanical properties, and morphology of boron carbide films deposited via direct current magnetron sputtering with a full-face erosion magnetron source in a mixed Ar-Ne plasma. Results show that films deposited at oblique substrate tilt angles on substrates biased at -50 V possess significantly lower oxygen content, superior mechanical properties, and higher density compared to their electrically grounded counterparts. In conclusion, these enhancements observed at oblique angles, while promising, come at the cost of larger residual compressive stress and higher Ne incorporation in films.

Materials science↗
DOE OSTI2021

Theoretical Analysis of Experimental Data of Sodium Diffusion in Oxidized Molybdenum Thin Films

In this work, the diffusion process of sodium (Na) in molybdenum (Mo) thin films while it was deposited on soda lime glass (SLG) was studied. A small amount of oxygen was present in the chamber while the direct-current (DC) magnetron sputtering was used for the deposition. The substrate temperatures were varied to observe its effect. Such molybdenum films, with or without oxidations, are often used in thin film solar cells, either as back contact or as hole transport layers. Secondary ion mass spectrometry (SIMS) was used to quantify the concentration of the species. A grain diffusion mechanistic model incorporating the effect of grain and grain boundary geometrical shape and size was developed. The model was used to provide an in-depth theoretical analysis of the sodium diffusion in molybdenum thin films that lead to the measured SIMS data. It was observed that not only diffusion coefficients should be considered when analyzing diffusion processes in thin films but also the ratio of grain boundary size to grain size. Both depend on substrate temperature and directly affect the amount of diffused species in the film. The data were analyzed under the light of the film growth speed versus diffusion front speed, the effect of oxygen content, and the effect of substrate temperature on the overall diffusion process. The temperature inversely affects the ratio of grain boundary size and grain size and directly affects the diffusion coefficient, which leads to a preferable temperature at which the highest amount of alkali can be found in the film.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thin film combinatorial sputtering of Al-Ce alloys: Investigating the phase separation of as-deposited solid solutions and determining the coefficient of thermal expansion

Al x Ce 100–x thin films with a composition range of ~75.0 < x < 99.5 at% (36.5 < x < 97.5 wt%) were synthesized via combinatorial co-sputtering from an Al and an Al 50 Ce 50 target. The crystal structure, phase fraction, film morphology, electrical resistivity, and temperature-dependent coefficients of thermal expansion (CTE) are all correlated to the Al x Ce 100–x composition. The as-deposited films form a metastable solid-solution, and annealing leads to the formation of the thermodynamically stable two-phase system of Al and the α-Al 11 Ce 3 intermetallic. Temperature dependent x-ray diffraction (XRD) reveals that the two phases expand independently of one another, and the thin film Al temperature-dependent CTE is similar to bulk Al. The thin film Al 11 Ce 3 intermetallic phase has a nearly constant CTE of ~1.5 × 10 –5 /°C within the temperature range studied (25–550 °C). To confirm the thin film Al 11 Ce 3 results, bulk stoichiometric Al 11 Ce 3 and +/- 1 wt% Ce samples were prepared and the CTE of each was measured with the same conditions. A Rietveld analysis of the bulk data enabled an estimation of the CTE in each of the 3 orthorhombic lattice parameters, which displayed anisotropic behavior. The thin film and bulk CTE measurements were in very good agreement. Estimations of the temperature dependent CTE of the two-phase alloys are made via the Reuss and Voigt models. Finally, by demonstrating the efficacy of the approach, more complex multi-component rapid materials discovery of low CTE Al-alloys can be pursued via the combinatorial thin film synthesis and XRD measurement.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Broadband, 920-nm mirror thin film damage competition

This year’s competition proposed to survey the state-of-the-art broadband, near-IR multilayer dielectric (MLD) mirrors designed for ultra-short, pulsed laser applications. The requirements for the coatings were a minimum reflection of 99.5% at 45-degree incidence angle for S-polarization from 830 nm to 1010 nm and group delay dispersion (GDD) < ± 50 fs 2 . The participants in this effort selected the coating materials, coating design, and deposition method. Samples were damage tested at a single testing facility to enable direct comparison among the participants using a 25 ± 5 fs OPCPA laser system operating at 5 Hz. A double blind test assured sample and submitter anonymity. The damage performance results, sample rankings, details of the deposition processes, coating materials and substrate cleaning methods are shared here. We found that multilayer coatings using tantala and/or hafnia as high index materials were top performers within several coating deposition groups. Specifically, dense coatings by ion-beam sputtering (IBS), magnetron sputtering (MS), and electron-beam ion assisted deposition (e-beam IAD) exhibited highest damage initiation onset (LIDT) while e-beam coatings were low performers. In addition, damage growth onset (LDGT) was also examined and the results are reported here for all samples as this performance metric plays an important role in establishing the safe operational conditions for larger aperture, ultrashort pulsed lasers. As a result, not all coating samples in the survey met the GDD requirements stated above and associated measurements are discussed in the context of the present and past competitions focused on similar broadband, near-IR MLD coatings.

42 ENGINEERING↗
DOE OSTI2025

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗
DOE OSTI2021

Searching for a route to synthesize in situ epitaxial Pr 2 Ir 2 O 7 thin films with thermodynamic methods

In situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO 3 (g) and IrO 2 (g) at high temperatures and high P O2 . To address this challenge, we combine thermodynamic analysis of the Pr-Ir-O 2 system with experimental results from the conventional physical vapor deposition (PVD) technique of co-sputtering. Our results indicate that only high growth temperatures yield films with crystallinity sufficient for utilizing and tailoring the desired topological electronic properties and the in situ synthesis of Pr 2 Ir 2 O 7 thin films is fettered by the inability to grow with P O2 on the order of 10 Torr at high temperatures, a limitation inherent to the PVD process. Thus, we suggest techniques capable of supplying high partial pressure of key species during deposition, in particular chemical vapor deposition (CVD), as a route to synthesis of Pr 2 Ir 2 O 7 .

Chemistry↗
DOE OSTI2024

Initial design concepts for solid boron injection in ITER

As part of ITER’s consideration to change its first wall material from beryllium to tungsten, the ITER Organization has proposed studying the feasibility of real-time solid boron injection (SBI) into the plasma to coat the walls and divertor to supplement glow discharge boronization (GDB). Boron deposits getter oxygen and reduce sputtering of tungsten from plasma facing components (PFCs). Particularly in areas with significant plasma wall interactions, boron coatings are expected to be short-lived under high performance plasma conditions. The proposed SBI system aims to maintain boron layers in these areas to avoid excessive radiation from tungsten in the plasma as a risk mitigation to ensure ITER will be able to reach and sustain Q = 10 conditions. The system will be used sparingly, as redeposition of boron can lead to significant tritium retention, which must be minimized in ITER to comply with nuclear safety concerns. SBI is proposed to limit and precisely control the amount of boron injected in real-time during plasma operation. Here, some of the design requirements and initial concepts for an SBI system in ITER are presented based on previous results carried out with SBI systems on a number of tokamaks and stellarators around the world. Previous results using SBI systems installed by PPPL have injected boron particles from 5 µm–2 mm diameter at calibrated rates of 2–200 mg/s in real-time during plasma operation on AUG, DIII-D, EAST, KSTAR, LHD, TFTR, WEST, and W7-X, leading to improved wall conditions with reduced plasma impurity concentrations and radiated power and improved plasma performance. The boron is ionized in the plasma edge and then deposited on plasma-wetted surfaces. On AUG, EAST and WEST reduced tungsten sputtering sources were observed following several discharges with SBI. Extrapolation of these SBI results are presented to estimate the amount of boron needed for wall conditioning in ITER. Real-time SBI control requirements and plasma operation scenarios for ITER are also described.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Combinatorial Cu-Ni Alloy Thin-Film Catalysts for Layer Number Control in Chemical Vapor-Deposited Graphene

We synthesized a combinatorial library of CuxNi1−x alloy thin films via co-sputtering from Cu and Ni targets to catalyze graphene chemical vapor deposition. The alloy morphology, composition, and microstructure were characterized via scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and X-ray diffraction (XRD), respectively. Subsequently, the CuxNi1−x alloy thin films were used to grow graphene in a CH4-Ar-H2 ambient at atmospheric pressure. The underlying rationale is to adjust the CuxNi1−x composition to control the graphene. Energy dispersive x-ray spectroscopy (EDS) analysis revealed that a continuous gradient of CuxNi1−x (25 at. % < x < 83 at.%) was initially achieved across the 100 mm diameter substrate (~0.9%/mm composition gradient). The XRD spectra confirmed a solid solution was realized and the face-centered cubic lattice parameter varied from ~3.52 to 3.58 A˙, consistent with the measured composition gradient, assuming Vegard’s law. Optical microscopy and Raman analysis of the graphene layers suggest single layer growth occurs with x > 69 at.%, bilayer growth dominates from 48 at.% < x < 69 at.%, and multilayer (≥3) growth occurs for x < 48 at.%, where x is the Cu concentration. Finally, a large area of bi-layer graphene was grown via a CuxNi1−x catalyst with optimized catalyst composition and growth temperature.

2D materials↗
DOE OSTI2023

Deposition and dielectric characterization of highly oriented V 2 O 5 thin films

The possibility of ferroelectricity in orthorhombic V 2 O 5 thin flms was investigated. Films were deposited via either a chemical solution deposition (CSD) route or by RF magnetron sputtering. Highly (001) oriented V 2 O 5 flms were achieved with both deposition routes at temperatures as low as 300°C. No evidence for ferroelectricity was observed, even in flms which had been doped to provide local nuclei for polarization reversal. Loss originated from mid-gap trap states stemming from oxygen vacancies that were observed with photoluminescence, supplemented by piezoresponse force microscopy measurements. Furthermore, these trap states may have helped mimic ferroelectricity in previous reports on V 2 O 5 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Stable magnesium zinc oxide by reactive Co-Sputtering for CdTe-based solar cells

Magnesium zinc oxide (MZO) is a promising front contact material for CdTe solar cells. Due to its higher band gap than traditional CdS, MZO can reduce parasitic absorption to significantly increase short-circuit current density while also providing a benefit of conduction band offset tuning through Mg:Zn ratio optimization. MZO has been successfully implemented into CdTe devices, however its stability has been of concern. The MZO stability issue has been attributed to the presence of oxygen in the CdTe device processing ambient, leading to double-diode behavior (S-kink) in the current density-voltage curves. Here we report on MZO thin films deposited by reactive co-sputtering. The reactively co-sputtered MZO thin films have encouraging stability, show no significant variation in work function of the surface over a period of 6 months, as measured by Kelvin probe. Energy conversion efficiencies of around 16% have been achieved both with and without presence of oxygen in device processing ambients across multiple research facilities. Finally, these efficiencies should be possible to increase further by tuning of the thin film deposition and device processing parameters, especially through optimization of the back contact.

14 SOLAR ENERGY↗
DOE OSTI2021

Synthesis of model sodium sulfide films

We report the direct deposition of model sodium sulfide films by RF magnetron sputtering from Na 2 S and Na 2 S 2 deposition targets. Analytical characterization and electrochemical cycling indicate that the deposited films are amorphous with stoichiometries that correspond to Na 2 S 3 and Na 2 S 2 formed from the Na 2 S and Na 2 S 2 targets, respectively. We propose that the loss of Na in the case of the Na 2 S target is due to preferential sputtering of Na resulting from the higher energy required to break the Na–S bonds in Na 2 S. Here, the development of thin film sodium sulfides opens a new route to understanding their fundamental properties, such as Na + transport, conductivity, and reactivity.

preferential sputtering↗
DOE OSTI2022

3rd harmonic magnetometry assessment of NbTiN-based SIS structures

In the quest for alternative superconducting materials to bring accelerator cavity performance beyond the bulk niobium (Nb) intrinsic limits, a promising concept proposes that superconductor-insulator-superconductor (SIS) thin film structures can delay magnetic flux penetration in accelerator cavities to higher fields [1]. NbTiN is a candidate superconductor for such structures. We have demonstrated high quality NbTiN and AlN deposited by reactive direct current magnetron sputtering (DCMS), both for individual layers and multilayers. Interface quality has been assessed for bi-layer stacks with various NbTiN and AlN thicknesses from 500 and 30 nm down to 3 and 1 nm. These SIS structures show continued sharp interfaces. The Hfp enhancement of the films was examined with 3rd harmonic magnetometry. The system was designed and built in an ongoing collaboration with CEA Saclay. It can measure 1? to 2? samples on a temperature controlled stage. This contribution presents the assessment of the first penetration field enhancement with 3rd harmonic magnetometry for standalone films and multilayer nanostructures.

Valente, Anne-Marie↗
DOE OSTI2020

Investigating the Chemical Reactivity of Lithium Silicate Model SEI Layers

Silicon anodes suffer from an unstable solid electrolyte interphase (SEI) layer that contributes to undesirable capacity fade with cycling. A key part to addressing this unstable SEI formation is to examine how certain components of the SEI react with the electrolyte over time. One SEI component that has not been thoroughly studied in the context of the chemical reactivity against the electrolyte is lithiated silicate. Four model silicate thin films with increasing lithium content were deposited by radio frequency (RF) magnetron sputtering to study how the lithiation of the native oxide on a silicon anode affects the chemical stability of the anode surface. SiO2, Li2Si2O5, Li2SiO3, and Li3SiOx films were exposed to 1.2 M LiPF6 in the 3:7 wt% ethylene carbonate/ethyl methyl carbonate (EC/EMC) electrolyte for periods of time that are representative of the amount of time it takes to undergo cell formations. Soaked samples were rinsed, dried, and characterized by a combination of attenuated total reflectance-infrared spectroscopy (ATR-IR), focused ion beam-secondary electron microscopy (FIB-SEM), and X-ray photoelectron spectroscopy (XPS) depth profiling. It was found that the rate of the decrease in film thickness of the silicates exposed to the electrolyte over time increases as a function of the lithium content in the thin film. This reaction involves HF etching and LiPF6 salt degradation leading to silicate loss and fluorination throughout the bulk. Understanding this chemical instability is critical to determining the overall mechanism of SEI degradation over time.

ADVANCED PROPULSION SYSTEMS,ENERGY STORAGE↗
DOE OSTI2022

Smooth Modified Surfaces of Silicon for the Study of Ionic Liquid Interfaces by Neutron Reflectometry

Silicon surfaces with termination of hydrogen (H–Si), quartz, native silicon (native-Si), and chemically deposited (Au–Si) cd and sputtered gold (Au–Si) s were fabricated with roughness less than 6 Å to study the solid–liquid interface of the ionic liquid (IL) methyltrioctylammonium bis(trifluoromethylsulfonyl)imide, [N 1888 ][TFSI], by neutron reflectometry (NR). The modifications made to the silicon surface were to obtain a native positive or negative charge similar to a charged surface in electrochemical systems. The differences in scattering length density (SLD) based on mass density and composition of IL were examined. Perpendicular to the substrate surface, a distinct transition between the first ion layer and the bulk liquid is resolved out of the reflectivity data for the gold surfaces and in particular the chemically deposited Au–Si. Other interfaces are best described by a diffuse transition between regions of different SLDs. The diffuse transitions between SLDs observed here suggest that the interfacial structure of IL, while ordered, is best described by a continuous variation in composition as opposed to distinct layers of ions.

25 ENERGY STORAGE↗