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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH{sub 3} molecular beam epitaxy

Unipolar-light emitting diode like structures were grown by NH{sub 3} molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In{sub 0.14}Ga{sub 0.86}N and In{sub 0.19}Ga{sub 0.81}N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

We report the enhancement of the minority carrier lifetime of GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties of the grown samples are studied by transmission electron microscopy and photoluminescence, which reveal the formation of vertically aligned bright and dark slabs corresponding to Ga-rich and In-rich GaInP regions, respectively, with good crystal quality. With the decrease of V/III ratio during LCM GaInP growth, it is seen that the band gap of LCM GaInP is reduced, while the PL intensity remains high and is comparable to that of bulk GaInP. We also investigate the minority carrier lifetime of LCM structures made with different flux ratios. It is found that the minority carrier lifetime of LCM GaInP is ∼37 times larger than that of bulk GaInP material, due to the spatial separation of electrons and holes by In-rich and Ga-rich regions of the LCM GaInP, respectively. We further demonstrate that the minority carrier lifetime of the grown LCM GaInP structures can easily be tuned by simply adjusting the V/III flux ratio during MBE growth, providing a simple yet powerful technique to tailor the electrical and optical properties at will. The exceptionally high carrier lifetime and the reduced band gap of LCM GaInP make them a highly attractive candidate for forming the top cell of multi-junction solar cells and can enhance their efficiency, and also make them suitable for other optoelectronics devices, such as photodetectors, where longer carrier lifetime is beneficial.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of 8 MeV electron beam irradiation on the structural and optical properties of CeO{sub 2} nanoparticles

The effect of 8 MeV electron beam irradiation on the structural and optical properties of cerium oxide nanoparticles was investigated. Ceria nanoparticles were synthesized by chemical precipitation method, and characterized by X-ray diffraction, transmission electron microscopy, ultraviolet–visible, photoluminescence and Raman spectroscopy. Ultraviolet–visible absorption spectra, photoluminescence and Raman spectra of beam irradiated samples were modified, and shifted to blue region, which were attributed to quantum size effect. Systematic observations found that nonstoichiometry, defects and size reduction caused by beam irradiation have great influence on optical band gap, blue shift, photoluminescence and Raman band modifications. Moreover, electron beam irradiation is a suitable technique to enhance the structural and optical properties of nanoceria by controlling the particle size, which may lead to potentially useful technological applications. - Highlights: • Investigated effect of beam irradiation on CeO{sub 2} nanoparticles • Beam irradiation caused size reduction and surface modification. • It increases microstrain, decreases d-spacing and broadens XRD peaks. • It also modifies optical band gap, absorption, PL and Raman bands.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

36 MATERIALS SCIENCE↗
DOE OSTI2016

CoCrMo cellular structures made by Electron Beam Melting studied by local tomography and finite element modelling

The work focuses on the structural and mechanical characterization of Co-Cr-Mo cellular samples with cubic pore structure made by Electron Beam Melting (EBM). X-ray tomography was used to characterize the architecture of the sample. High resolution images were also obtained thanks to local tomography in which the specimen is placed close to the X-ray source. These images enabled to observe some defects due to the fabrication process: small pores in the solid phase, partially melted particles attached to the surface. Then, in situ compression tests were performed in the tomograph. The images of the deformed sample show a progressive buckling of the vertical struts leading to final fracture. The deformation initiated where the defects were present in the strut i.e. in regions with reduced local thickness. The finite element modelling confirmed the high stress concentrations of these weak points leading to the fracture of the sample. - Highlights: • CoCrMo samples fabricated by Electron Beam Melting (EBM) process are considered. • X-ray Computed Tomography is used to observe the structure of the sample. • The mechanical properties are tested thanks to an in situ test in the tomograph. • A finite element model is developed to model the mechanical behaviour.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Gallium beam lithography for superconductive structure formation

The present invention relates to the use of gallium beam lithography to form superconductive structures. Generally, the method includes exposing a surface to gallium to form an implanted region and then removing material adjacent to and/or below that implanted region. In particular embodiments, the methods herein provide microstructures and nanostructures in any useful substrate, such as those including niobium, tantalum, tungsten, or titanium.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Modeling of the interaction of a volumetric metallic metamaterial structure with a relativistic electron beam

We present the design of a volumetric metamaterial (MTM) structure and its interaction with a relativistic electron beam. This novel structure has promising applications in particle beam diagnostics, acceleration and microwave generation. The volumetric MTM has a cubic unit cell allowing structures of arbitrary size to be configured as an array of identical cells. This structure allows the exploration of the properties of a metamaterial structure without having to consider substrates or other supporting elements. The dispersion characteristics of the unit cell are obtained using eigenmode simulations in the HFSS code and also using an effective medium theory with spatial dispersion. Good agreement is obtained between these two approaches. The lowest order mode of the MTM structure is found to have a negative group velocity in all directions of propagation. The frequency spectrum of the radiation from a relativistic electron beam passing through the MTM structure is calculated analytically and also calculated with the CST code, with very good agreement. The radiation pattern from the relativistic electron beam is found to be backward Cherenkov radiation, which is a promising tool for particle diagnostics. Calculations are also presented for the application of a MTM-based wakefield accelerator as a possible all-metal replacement for the conventional dielectric wakefield structure. The proposed structure may also be useful for MTM-based vacuum electron devices for microwave generation and amplification.

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

Reflection of a TE-polarised Gaussian beam from a layered structure under conditions of resonance excitation of waveguide modes

The problem of reflection of a TE-polarised Gaussian light beam from a layered structure under conditions of resonance excitation of waveguide modes using a total internal reflection prism is considered. Using the spectral approach we have derived the analytic expressions for the mode propagation lengths, widths and depths of m-lines (sharp and narrow dips in the angular dependence of the specular reflection coefficient), depending on the structure parameters. It is shown that in the case of weak coupling, when the propagation lengths l{sub m} of the waveguide modes are mainly determined by the extinction coefficient in the film, the depth of m-lines grows with the mode number m. In the case of strong coupling, when l{sub m} is determined mainly by the radiation of modes into the prism, the depth of m-lines decreases with increasing m. The change in the TE-polarised Gaussian beam shape after its reflection from the layered structure is studied, which is determined by the energy transfer from the incident beam into waveguide modes that propagate along the structure by the distance l{sub m}, are radiated in the direction of specular reflection and interfere with a part of the beam reflected from the working face of the prism. It is shown that this interference can lead to the field intensity oscillations near m-lines. The analysis of different methods for determining the parameters of thin-film structures is presented, including the measurement of mode angles θ{sub m} and the reflected beam shape. The methods are based on simultaneous excitation of a few waveguide modes in the film with a strongly focused monochromatic Gaussian beam, the waist width of which is much smaller than the propagation length of the modes. As an example of using these methods, the refractive index and the thickness of silicon monoxide film on silica substrate at the wavelength 633 nm are determined. (fibre and integrated-optical structures)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1972

Electron beam welding of aircraft structures

Requirements for advanced aircraft have led to more extensive use of titanium alloys and the resultant search for joining processes which can produce lightweight, high strength airframe structures efficiently. As a result, electron beam welding has been investigated. The following F-14A components are now being EB welded in production and are mainly annealed Ti-6Al-4V except for the upper wing cover which is annealed Ti-6Al-6V-2Sn: F-14A wing center section box, and F-14A lower and upper wing covers joined to wing pivot fitting assemblies. Criteria for selection of welding processes, the EB welding facility, development work on EB welding titanium alloys, and F-14A production and sliding seal electron beam welding are reported.

Witt, R. H.↗
DOE OSTI2018

Defects and 3D structural inhomogeneity in electron beam additively manufactured Inconel 718

Highlights: • A protocol for 3D characterization of structure and defects in additively manufactured EBM 718 is presented. • Lack of fusion defects disrupt local microstructure, creating isolated regions of equiaxed grains. • Clustering of micron-scale nitrides is attributed to a particle rafting process. • Normalized size-number density relationship of carbides matches that of industrial ingots. • Removal of porosity via post-processing will not correct microstructural inhomogeneities created by lack of fusion defects. - Abstract: Material structure and defects created during additive manufacturing contribute to the variability in mechanical properties of these parts, limiting their use for critical applications. Three-dimensional crystallographic, structural, and chemical information in electron beam melted Inconel 718 was collected from the sub-micron to the millimeter scale using the TriBeam tomography system. The relationship of defects to the surrounding microstructure has been studied in detail. Lack of fusion defects created sharp discontinuities in the grain morphology that extended several build layers beyond the layer where the defect originated. Nitrides and carbides in the size range of 1.25 μm to 10 μm were observed throughout the volume, with pronounced nitride clustering. The similarities between solidification in additive manufacturing and traditional manufacturing processes are demonstrated by the comparable size and distribution of carbides measured for industrial-scale samples of 718. Defects created during additive manufacturing cannot be easily remedied via standard post-processing techniques, and will likely diminish the mechanical performance of additively manufactured parts.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Accelerated Electron-Beam Formation with a High Capture Coefficient in a Parallel Coupled Accelerating Structure

An electron beam with a high (close to 100%) coefficient of electron capture into the regime of acceleration has been obtained in a linear electron accelerator based on a parallel coupled slow-wave structure, electron gun with microwave-controlled injection current, and permanent-magnet beam-focusing system. The high capture coefficient was due to the properties of the accelerating structure, beam-focusing system, and electron-injection system. Main characteristics of the proposed systems are presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Atomic‐Resolution Imaging of Halide Perovskites Using Electron Microscopy

Abstract Atomic‐resolution imaging of halide perovskites (HPs) using transmission electron microscopy (TEM) is challenging because of the sensitivity of their structures to the electron beam. In this article, recent achievements in this area are reviewed, covering both all‐inorganic and organic–inorganic hybrid HPs, with an emphasis on the specific imaging conditions that have proven to be effective in avoiding electron beam‐induced structural damage. The discussion focusses on the total electron dose that HPs can bear before being damaged and the effects of different imaging modes, accelerating voltages, and temperatures. The crucial role of a direct‐detection electron‐counting camera in reducing the required electron dose is outlined, which is indispensable for imaging extremely sensitive organic–inorganic hybrid perovskites. In addition to reviewing published works, the results of initial attempts to perform atomic‐resolution elemental mapping for an all‐inorganic HP and image a hybrid HP using scanning TEM are introduced. The preparation of a TEM specimen from macroscopic crystals or devices of HPs, which is very important for practical applications but has not yet received attention, is also discussed. This article aims to provide guidance on the acquisition of atomic‐resolution TEM images of HPs and inspire the development of more imaging technologies for sensitive materials.

Song, Kepeng↗
DOE OSTI2013

What Limits the Gap in a Flat Dechirper for an X-ray FEL

In a linac-based X-ray free electron laser (FEL) there is often a need for energy chirp control of the beam before it enters the undulator. In a corrugated, metallic beam pipe in round geometry is suggested and analyzed as a device that can be used to passively “dechirp” the beam. Compared to round geometry, flat geometry—having the beam pass between two flat, corrugated plates—has the advantage of allowing the dechirper strength to be adjustable by changing the separation of the plates. And, indeed, such a device was recently tested in a proof-of-principle experiment at the PAL injector test facility in Pohang, Republic of Korea, and another at BNL’s ATF. One disadvantage of flat geometry is that, in addition to the usual dipole wakefield that is excited when the beam passes through the structure off axis, there is also a quadrupole wake excited, even when structure and beam are perfectly aligned.

ACCPHY↗
DOE OSTI2014

Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877 × 10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112 × 10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300 K to 77 K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

High-density InAs/GaAs{sub 1−x}Sb{sub x} quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

InAs quantum-dot structures were grown using a GaAs{sub 1−x}Sb{sub x} matrix on a GaAs(001) substrate. The use of GaAs{sub 1−x}Sb{sub x} for the buffer and cap layers effectively suppressed coalescence between dots and significantly increased the dot density. The highest density (∼3.5 × 10{sup 11}/cm{sup 2}) was obtained for a nominal 3.0 monolayer deposition of InAs with an Sb composition of x = 13–14% in the GaAs{sub 1−x}Sb{sub x} matrix. When the Sb composition was increased to 18%, the resulting large photoluminescent red shift (∼90 meV) indicated the release of compressive strain inside the quantum dots. For x > 13%, we observed a significant decrease in photoluminescence intensity and an increase in the carrier lifetime (≥4.0 ns). This is attributed to the type-II band alignment between the quantum dots and matrix material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Multiphysics Simulation of the Thermal Response of a Nanofibrous Target in a High-Intensity Beam

Nanofibrous structures are of high interest to the fields of engineering and materials science, and investigation of their properties as well as discovery of novel applications for them both constitute lively areas of research. A very promising application of nanofiber mats lies in the field of accelerator technology: beam targets made from nanofiber mats offer a solution to the problem of advancing the "intensity frontier"–-the limit on the beam intensities that can be realized in fixed target experiments and neutrino production facilities. However, testing has shown that the survivability of these nanofiber targets depends strongly on their manufacturing parameters, such as the packing density of fibers. In this work, we will use multiphysics simulations to perform a thermal study on how nanofiber targets react to high intensity beams, so that the dependency of the targets’ lifetime on their construction parameters can be better understood.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

Temporal and spatial structure of a runaway electron beam in air at atmospheric pressure

The time- and spatial structure of a runaway electron beam generated in air at atmospheric pressure by a high-voltage pulse with a rise time of {approx}300 ps is studied experimentally and numerically. It is obtained that the duration of the runaway electron current is a few tens of picoseconds, and it can consist of two or many peaks. It is shown that the many-peak temporal structure of the beam is caused by the non-simultaneous appearance of several emission centers on the cathode edge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗