Damage to field-effect transistors under 22 and 128 MeV proton bombardments
Damage to field effect transistors by proton irradiation
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Damage to field effect transistors by proton irradiation
High voltage pulse causing beta degradation and junction resistance drop in transistor
Ionizing radiation effects on silicon planar bipolar transistors to determine degradation mechanisms
Compound diode-transistor structure with current gain invariant with temperature
Design theory and fabrication procedure for n-p-n 100 ampere silicon switching transistor
Small current measurements with insulated-gate field effect transistor electrometers
Gamma radiation tests on n-p-n silicon epitaxial transistors
Feasibility of fabricating thick film, insulated gate field effect transistor using integrated screened circuit technology
Fabrication of thin film transistors compatible with passive components
Phenomenological study of radiation damage and recovery of metal oxide semiconductor field effect transistors
Low noise amplifier design with field effect transistors, random noise characteristics, and noise measurements on commercial devices
Proton irradiation effects in MOS and junction field effect transistors and integrated circuits
Silicon switching transistor with saturation voltage of 0.1 V at 75 A collector current
Ionizing radiation effects on silicon planar bipolar transistors determine degradation mechanisms
Low noise transistor switch design capable of switching 1A and meeting military current probe EMI specifications
We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.
We report on our effort to develop the world's fastest transistor with the ultimate goal of utilizing them in electronic devices for advancing the present state of RF electronic systems.