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At least 235 records · Page 13

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NASA NTRS2017

The JPL Neptune Radiation Model (NMOD)

The objective of this study is the development of a comprehensive radiation model of the Neptunian environment for JPL mission planning. The ultimate goal is to provide a description of the high-energy electron and proton environments and the magnetic field at Neptune that can be used for engineering design. The JPL Neptune Radiation Model (NMOD) models the high-energy electrons and protons between 0.025 MeV and 5 MeV based on the California Institute of Technology's Cosmic Ray Subsystem and the Applied Physics Laboratory's Low Energy Charged Particle Detector on Voyager 2. As in previous JPL radiation models, the form of the Neptunian model is based on magnetic field coordinates and requires a conversion from spacecraft coordinates to Neptunian-centered magnetic "B-L" coordinates. Two types of magnetic field models have been developed for Neptune: 1) simple "offset, tilted dipoles" (OTD), and 2) a complex, multi-pole expansion model ("O8"). A review of the existing data on Neptune and a search of the NASA Planetary Data System (PDS) were completed to obtain the most current descriptions of the Neptunian high-energy particle environment. These data were fit in terms of the O8 B-L coordinates to develop the electron and proton flux models. The flux predictions of the new model were used to estimate the total ionizing dose (TID) rate along the Neptunian equator, meridional flux contours for the electrons and protons, and for flux and dose comparisons with the other radiation belts in the Solar System.

Garrett, Henry↗

NASA NTRS2017

The JPL Neptune Radiation Model (NMOD)

magnetic field↗

NASA NTRS2017

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Power semiconductor devices↗

NASA NTRS2010

Localized Triple Modular Redundancy vs. Distributed Triple Modular Redundancy on a ProASIC3E Reprogrammable FPGA

Field programmable gate arrays (FPGA) are used in every space application. Currently, most space flight applications use radiation hardened (RH) FPGAs, which are very expensive. There is a desire to use cheaper, commercial off the shelf reprogrammable FPGAs, which are more susceptible to radiation effects known as single-event effects (SEE). The RH parts have SEE and total ionizing dose (TID) hardened elements pre-integrated into the part. This means that the designer does not need to implement any hardening techniques while configuring the device. The COTS parts on the other hand must be mitigated by design in order to insure any form of mitigation. The design techniques this project examines concern the use of localized triple modular redundancy (LTMR) and distributed triple modular redundancy (DTMR). LTMR triples every flip flop in the device architecture while DTMR triples everything except for the global routes (clocks, resets, and enables). The testing was performed on a ProASIC3E FPGA at the Texas A&M cyclotron facility. Two design architectures were used: shift registers and counters, both with LTMR and DTMR mitigation techniques. The test results prove that DTMR is more effective at reducing SEE than LTMR. We also determined that there was not a significant difference between the use of shift registers and counters for test purposes. More testing is required to obtain additional linear energy transfer values for each architecture and mitigation technique in order to determine the most cost-effective method of SEE mitigation.

McGuffey, Alex↗

NASA NTRS2010

Statistical Model Selection for TID Hardness Assurance

Radiation Hardness Assurance (RHA) methodologies against Total Ionizing Dose (TID) degradation impose rigorous statistical treatments for data from a part's Radiation Lot Acceptance Test (RLAT) and/or its historical performance. However, no similar methods exist for using "similarity" data - that is, data for similar parts fabricated in the same process as the part under qualification. This is despite the greater difficulty and potential risk in interpreting of similarity data. In this work, we develop methods to disentangle part-to-part, lot-to-lot and part-type-to-part-type variation. The methods we develop apply not just for qualification decisions, but also for quality control and detection of process changes and other "out-of-family" behavior. We begin by discussing the data used in ·the study and the challenges of developing a statistic providing a meaningful measure of degradation across multiple part types, each with its own performance specifications. We then develop analysis techniques and apply them to the different data sets.

Ladbury, R.↗

NASA NTRS2018

Robust, Radiation Tolerant Command and Data Handling and Power System Electronics for SmallSats

In today's budgetary environment, there is significant interest within the National Aeronautics and Space Administration (NASA) to enable small robotic science missions that can be executed faster and cheaper than previous larger missions. To help achieve this, focus has shifted from using exclusively radiation-tolerant or radiation-hardened parts to using more commercial-off-the-shelf (COTS) components for NASA small satellite missions that can last at least one year in orbit. However, there are some portions of a spacecraft's avionics, such as the Command and Data Handling (C&DH) subsystem and the Power System Electronics (PSE) that need to have a higher level of reliability that goes beyond what is attainable with currently available COTS parts. While there are a number of COTS components that can withstand a total ionizing dose (TID) of tens or hundreds of kilorads, there is still a great deal of concern about tolerance to and mitigation of single-event effects (SEE).

6U satellite↗

NASA NTRS2018

Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

Sun, Xiaoli↗

NASA NTRS2018

The Probability of False Go/No-Go Determined by GOES Proton Flux: Proposed Launch Constraints for Avoiding Damaging Solar Energetic Particle Events

The space environment is full of harmful radiation and high energy particles that can cause damage to materials and affect computer systems by e.g., single event effects (SEEs), total ionizing dose (TID), etc. There are three main sources of high energy particles: Trapped radiation in Earth's Van Allen belts (electrons and protons); Solar energetic particles (SEPs) (protons and heavy ions); Galactic cosmic rays (GCRs) (protons and heavy ions). In this study, we focus on the SEPs and their time series and energy spectrum to quantify probabilities of launch go/no-go. The SEPs originate from solar particle events (SPEs) that are associated with a solar flare and/or a coronal mass ejection (CME). These events are difficult to predict. Recent work has been done on these prediction techniques. The Geostarionary Operational Environmental Satellite (GOES) has been observing SEPs for decades. The greater than 10 megaelectronvolt proton flux is shown in Figure 2 since 1986. The SEPs are influenced by the 11-year solar cycle and typically come from active regions on the Sun.

DeStefano, Anthony M.↗

NASA NTRS2017

Radiation Hardness Study on SiC Power MOSFETs

As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for higher temperature/power rating, higher efficiency, and reduction in size and weight, which makes this technology ideal for high temperature, harsh environment applications such as downhole, medical, avionic, or even space applications. Radiation tolerance therefore becomes a critical aspect of the device performance in such environments. In this work, we explored radiation hardness of SiC devices to total ionizing dose (TID), neutron-induced single-event burnout (SEB), and heavy-ion induced single-event effects (SEE).

SiC↗

NASA NTRS2016

Radiation Tolerance Studies of Long Wavelength Infrared InAs/GaSb Detectors

In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λ(sub c) = 10.2µm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from j(sub d) = 5x10(exp -5) A/sq cm at V(sub b) = 0.1V and T = 80K to j(sub d) = 6x10(exp -3) A/sq cm at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.

InAs/GaSb photodiodes↗

NASA NTRS2017

Effect of Radiation and Endurance on Pulsed Programming of Commercial NAND Flash Memory

Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results.

Narasimham, Avyaya Jayanthi↗

NASA NTRS2017

High Density Packaging Technologies for RF Electronics in Small Spacecraft

This paper will describe a few high density packaging technologies which we are currently exploring for use in current and future small spacecraft applications. The three categories of technologies include organic multichip modules (MCMs), ceramic leadless surface mount technology (SMT) and 3D printed waveguide structures. There are many other packaging technologies that currently exist but these three were selected in part due to their long heritage in various commercial, military and space applications along with each having a relatively clear path to flight. For each of these technologies, detailed examples will be included in which hardware has been fabricated and tested for use in RF electronics for spacecraft transponders. The organic MCM example will be described in most detail and it utilizes a packaging technology by the name of CoreEZ which is a trademark of i3 Electronics. This MCM has shrunk a portion of our electronics down to 1/8th of its previous area. The CoreEZ technology has been shown to be rad hard beyond a total ionizing dose (TID) of 300kRad and the MCM which was fabricated has gone through thermal cycling and shown to have no degradation in performance. The ceramic leadless package examples include packages from high reliability manufactures by the name of KCB solutions and Barry Industries. In the case of KCB solutions, we have multiple products that will be described including a hermetic ceramic carrier which houses three microwave monolithic integrated circuits (MMICs) along with small discrete components. Finally, we will discuss the results of our search for a 3D printing process that allows us to reduce the cost and volume of our waveguide filters and diplexers for low cost small satellite applications. We have fabricated a few prototypes using direct metal laser sintering (DMLS) and metal coated plastics. Each of these packaging technology discussions will have a brief overview of its current and future use.

Aquirre, Fernando↗

NASA NTRS2019

Goddard Modular SmallSat Architecture (GMSA) Hardware Presentation

In today's rapidly advancing technology roadmap for space applications there is an emphasis on completing missions faster and cheaper than previous large-scale missions at the National Aeronautics and Space Administration (NASA) such as the Magnetospheric Multiscale (MMS) mission. As part of this effort, focus has shifted from using mostly radiation-tolerant or radiation-hardened parts to more commercial-off-the-shelf (COTS) components for missions that can last at least one year in orbit. However, there are some portions of a spacecraft's avionics, such as the command and data handling (C&DH) system and the Electrical Power Systems (EPS) that need to have some level of predictable reliability that goes beyond the capabilities of currently available COTS parts. While there are a number of COTS components that can withstand a total ionizing dose (TID) of tens or hundreds of kilorads, there is still a great deal of concern about tolerance to and mitigation of single-event effects (SEE).

Fraction, James↗

NASA NTRS2019

Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.

Lauenstein, Jean-Marie↗

NASA NTRS2018

Wide-bandgap Semiconductors in Space: Appreciating the Benefits but Understanding the Risks

Dr. Jean-Marie Lauenstein, NASA Goddard Space Flight Center, will present the radiation challenges of adopting wide-bandgap semiconductors for space applications. Wide-bandgap devices are attractive for space applications due to improved performance such as faster switching speeds, lower power losses, and their ability to operate at higher temperature as compared with their silicon counterparts. Their tolerance to total ionizing dose levels (> 100 krad(Si)) further enhances the desirability of these technologies. This short course will focus on silicon carbide and gallium nitride power rectifying, switching, and RF devices as these technologies are now readily available commercially. The radiation hardness assurance issues presented by the heavy-ion radiation environment will be discussed.

Lauenstein, Jean-Marie↗

NASA NTRS2017

A CubeSat-Payload Radiation-Reliability Assurance Case using Goal Structuring Notation

CubeSats have become an attractive platform for universities, industry, and government space missions because they are cheaper and quicker to develop than full-scale satellites. One way CubeSats keep costs low is by using commercial off-the-shelf parts (COTS) instead of space-qualified parts. Space-qualified parts are often costlier, larger, and consume more power than their commercial counterparts precluding their use within the CubeSat form-factor. Given typical power budgets, monetary budgets, and timelines for CubeSat missions, conventional radiation hardness assurance, like the use of space-qualified parts and radiation testing campaigns of COTS parts, is not practical. Instead, a system-level approach to radiation effects mitigation is needed. In this paper an assurance case for a system-level approach to mitigate radiation effects of a CubeSat science experiment is expressed using Goal Structuring Notation (GSN), a graphical argument standard. The case specifically looks at three main mitigation strategies for the radiation environment: total ionizing dose (TID) screening of parts, detection and recovery from single-event latch-ups (SEL) and single-event functional interrupts (SEFI). The graphical assurance case presented makes a qualitative argument for the radiation reliability of the CubeSat experiment using part and system-level mitigation strategies.

COTS↗

NASA NTRS2020

Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI

This invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm2/mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.

Integrated Circuits↗

NASA NTRS2009

Commercial Sensor Survey Fiscal Year 2009 master compendium radiation test report

The NASA Electronic Parts and Packaging (NEPP) Program Sensor Technology Commercial Sensor Survey task is geared toward benefiting future NASA space missions with low-cost, short-duty-cycle, visible-wavelength imaging needs. Such applications could include imaging for educational outreach purposes or short surveys of spacecraft, planetary, or lunar surfaces. Under the task, inexpensive, low-power, commercial grade CMOS sensors were surveyed in fiscal year 2007 (FY07), and three sensors were selected and tested for total ionizing dose (TID) and displacement damage dose (DDD) tolerance in fiscal year 2008 (FY08). The selected sensors had to meet selection criteria chosen to support small, low-mass cameras that produce good resolution color images. The commercial CMOS sensors tested under the task in FY08 showed very promising response to typical outreach and survey camera TID and DDD levels. In fiscal year 2009 (FY09), the survey was broadened to include two additional, similar sensor products. This compendium provides results for all radiation testing performed on the Micron and OmniVision sensors that were selected for radiation tolerance testing in FY08 and FY09.

Thorbourn, Dennis O.↗