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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Improved substrate holder preferentially provides more uniform substrate cooling and increases the proportion of vapor flowing over the substrate during growth. Nitrogen gas is constricted in the substrate holder to cool the substrate.
Ni-Fe alloy films composition gradients produced by W boats evaporation, noting vapor pressures effect
Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.
A process for forming a thin metal coating on a substrate wherein a gas stream heated by an electrical current impinges on a metallic target in a vacuum chamber to form a molten pool of the metal and then vaporize a portion of the pool, with the source of the heated gas stream being on one side of the target and the substrate being on the other side of the target such that most of the metallic vapor from the target is directed at the substrate.
Research is directed at development of a detailed model of mass and heat transfer and chemical reaction in the pyrolysis of silane for the growth of thin amorphous silicon substrates incorporating laser heating of the gas phase above the film. The model will be the basis for evaluation of the relative importances of the decomposition of SiH4 in the vapor phase, mass transfer of the intermediate species, e.g., SiH2, and the evolution of hydrogen gas. Plans are also underway for developing a model for homogeneous nucleation of Si in the vapor phase to model the rate limitations observed at high gas-phase temperatures and high partial pressures of silane. Work was concentrated on an almost one-dimensional model for the coupling of the CO2 laser beam for heat transfer of the vapor phase with simple kinetic models for SiH4 decomposition and subsequent absorption of Si vapor on the substrate. Mass transfer in the vapor phase is assumed to be solely by diffusion. The role of convection in the vapor phase caused by the large changes in density in and around the center of the laser beam will be analyzed to evaluate the potential of microgravity experiments for increasing the uniformity of the film and the deposition rate.
Sets of Apollo 15 and 17 samples consisting of soil, breccia and breccia glass coating were selected for a study of regolith evolution. The data are inconclusive with respect to local cratering effects or rock weathering. A large number of samples from all missions fall into one of five groups based on their water leachable Cl and Br fractions. A limited number of vapor clouds with distinct labile Cl/Br ratios is suggested. One such vapor cloud may have particular significance since it has a primordial Cl/Br ratio.
The present 1000 C and 1300 C oxidation tests on 111-oriented single-crystal Si and dense CVD Si3N4 notes the oxidation rates of the latter in wet O2, dry O2, wet inert gas, and steam atmosphere conditions to be several orders of magnitude lower than the rates for the former in identical atmospheric conditions. Although the parabolic rate constant for Si increased linearly as the water vapor pressure increased, the parabolic rate constant for Si3N4 exhibited a nonlinear dependency on water vapor pressure in the presence of O2. NO and NH3 formation at the reaction interface of Si3N4, and the counterpermeation of these reaction products, are noted to dominate reaction kinetics.
Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.
Vacuum deposition of gold thin films on nickel, nickel-chromium, and nickel-rhenium substrates for use as lubricants
Fabrication techniques for high temperature thermocouples bind all components so that differential thermal expansion and contraction do not result in mechanical slippage and localized stress concentrations. Installation space is reduced or larger thermoelements and thicker insulation can be used to improve temperature measurement accuracy.
Variable spacing planar thermionic converter with tungsten emitter, niobium collector and niobium guard ring
Preferred crystal orientations and vacuum work functions of planar tungsten deposits formed by hydrogen reduction of tungsten chloride
Electron diffraction in scattering of rare gases from vacuum-deposited silver crystals
Performance of deposited tungsten as thermionic converter
Performance characteristics of parallel plane, variable spaced thermionic converter with tungsten emitter and molybdenum-niobium collector
Method extends scope of ion plating technique to include deposition of alloy films without changing composition of plating alloy. Coatings flow with specimen material without chipping or peeling. Technique is most effective vacuum deposition method for depositing alloys for strong and lasting adherence.
Process is accomplished by reducing tungsten hexafluoride with hydrogen. Metallic tungsten of essentially 100 percent purity and density is produced and built up as dense deposit on heated mandrel assembly. Process variations are building up, sealing or bonding refractory metals at temperatures below transition temperatures of base metal substrates.
Spatter proof evaporant source design for use in vacuum deposition of solid thin films on substrates