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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Development and performance of power processor system for 2-gigahertz, 200-watt amplifier for communications technology satellite

The electrical and environmental requirements for a power processor system (PPS) designed to supply the appropriate voltages and currents to a 200-watt traveling wave tube (TWT) for a communication technology satellite is described. A block diagram of the PPS, the interface requirements between the PPS and spacecraft, the interface requirements between the PPS and 200-watt TWT, and the environmental requirements of the PPS are presented. Also included are discussions of protection circuits, interlocking sequences, and transient requirements. Predictions of the flight performance, based on ground test data, are provided.

Siegert, C. E.↗
NASA NTRS1988

Development of 20 GHz monolithic transmit modules

The history of the development of a transmit module for the band 17.7 to 20.2 GHz is presented. The module was to monolithically combine, on one chip, five bits of phase shift, a buffer amplifier and a power amplifier to produce 200 mW to the antenna element. The approach taken was MESFET ion implanted device technology. A common pinch-off voltage was decided upon for each application. The beginning of the total integration phases revealed hitherto unencountered hazards of large microwave circuit integration which were successfully overcome. Yield and customer considerations finally led to two separate chips, one containing the power amplifiers and the other containing the complete five bit phase shifter.

Higgins, J. A.↗
NASA NTRS1973

Electronic control circuits: A compilation

A compilation of technical R and D information on circuits and modular subassemblies is presented as a part of a technology utilization program. Fundamental design principles and applications are given. Electronic control circuits discussed include: anti-noise circuit; ground protection device for bioinstrumentation; temperature compensation for operational amplifiers; hybrid gatling capacitor; automatic signal range control; integrated clock-switching control; and precision voltage tolerance detector.

Source record↗
NASA NTRS1976

Optical technique for measurement of random water wave surfaces

An optical system using the refraction of a vertical light ray has been developed for measuring the slope of random wind-generated water waves. The basic elements of the system are photovoltaic cells which are connected to individual amplifiers so that when the refracted light beam is incident on a cell, the output of the cell is amplified and then supplied as input to a comparator. The comparator then provides a specified voltage output, independent of the incident light intensity, as long as it is above a designated background value. The comparators are designed to give output voltages comparable with standard TTL. This arrangement provides a high signal from the cell when it experiences incident light, and a low signal when there is only background light, with the high and low signals at TTL voltage levels.

Sorrell, F. Y.↗
NASA NTRS2005

Event-driven charge-coupled device design and applications therefor

An event-driven X-ray CCD imager device uses a floating-gate amplifier or other non-destructive readout device to non-destructively sense a charge level in a charge packet associated with a pixel. The output of the floating-gate amplifier is used to identify each pixel that has a charge level above a predetermined threshold. If the charge level is above a predetermined threshold the charge in the triggering charge packet and in the charge packets from neighboring pixels need to be measured accurately. A charge delay register is included in the event-driven X-ray CCD imager device to enable recovery of the charge packets from neighboring pixels for accurate measurement. When a charge packet reaches the end of the charge delay register, control logic either dumps the charge packet, or steers the charge packet to a charge FIFO to preserve it if the charge packet is determined to be a packet that needs accurate measurement. A floating-diffusion amplifier or other low-noise output stage device, which converts charge level to a voltage level with high precision, provides final measurement of the charge packets. The voltage level is eventually digitized by a high linearity ADC.

Doty, John P.↗
NASA NTRS2008

Total Dose Effects on Single Event Transients in Linear Bipolar Systems

Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.

Buchner, Stephen↗
NASA NTRS1994

p-MOSFET total dose dosimeter

A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.

Buehler, Martin G.↗
NASA NTRS2009

Wide-temperature integrated operational amplifier

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Mojarradi, Mohammad↗
NASA NTRS2015

Solid-State Cloud Radar System (CRS) Upgrade and Deployment

The recent decade has brought rapid development in solid-state power amplifier (SSPA) technology. This has enabled the use of solid-state precipitation radar in place of high-power and high-voltage systems such as those that use Klystron or Magnetron transmitters. The NASA Goddard Space Flight Center has recently completed a comprehensive redesign of the 94 gigahertz Cloud Radar System (CRS) to incorporate a solid-state transmitter. It is the first cloud radar to achieve sensitivity comparable to that of a high-voltage transmitter using solid-state. The NASA Goddard Space Flight Center's Cloud Radar System (CRS) is a 94 gigahertz Doppler radar that flies on the NASA ER-2 high-altitude aircraft. The upgraded CRS system utilizes a state-of-the-art solid-state 94 gigahertz power amplifier with a peak transmit power of 30 watts. The modernized CRS system is detailed here with data results from its deployment during the 2014 Integrated Precipitation and Hydrology Experiment (IPHEX).

Radar Radiometer Sampling↗
NASA NTRS1966

FET comparator detects analog signal levels without loading analog device

FET comparator circuit detects discrete analog computer output levels without excessively loading the output amplifier of the computer. An FET common source amplifier is coupled by a differential amplifier to a bistable transistor flip-flop. This circuit provides a digital output for analog voltages above or below a predetermined level.

Wallace, H. L.↗
NASA NTRS1973

Derivation of a tangent function using an integrated circuit four-quadrant multiplier

A tangent function generator is provided which utilizes input signals proportionate to the sine and cosine of a given angle. The equipment accomplishes a trigonometric manipulation which forms an output signal substantially independent of the input reference voltage but proportional to the tangent of the angle. The device uses a multiplier and operational amplifier.

Bregman, B. J.↗
NASA NTRS1974

Microbial detection method based on sensing molecular hydrogen

A simple method for detecting bacteria, based on the time of hydrogen evolution, was developed and tested against various members of the Enterobacteriaceae group. The test system consisted of (1) two electrodes, platinum and a reference electrode, (2) a buffer amplifier, and (3) a strip-chart recorder. Hydrogen evolution was measured by an increase in voltage in the negative (cathodic) direction. A linear relationship was established between inoculum size and the time hydrogen was detected (lag period). Lag times ranged from 1 h for 1 million cells/ml to 7 h for 1 cell/ml. For each 10-fold decrease in inoculum, length of the lag period increased 60 to 70 min. Based on the linear relationship between inoculum and lag period, these results indicate the potential application of the hydrogen-sensing method for rapidly detecting coliforms and other gas-producing microorganisms in a variety of clinical, food, and other samples.

Wilkins, J. R.↗
NASA NTRS1990

Welding-Current Indicator

Light flashes on to indicate high current. Simple, inexpensive display circuit indicates when 3,000-A welding current flows in welding gun. Onset of welding current induces voltage and current in 1,000-turn, 28-gauge copper-wire coil. Single-transistor amplifier amplifies induced current, energizing light-emitting diode (LED) connected to collector of transistor. Light from LED gives simple, direct indication of welding current.

Hensley, Milton C.↗
NASA NTRS1994

Isolation Amplifier Based On Sigma-Delta Modulation

Improved isolation amplifier transmits dc or low-frequency analog signal by use of digital pulses. Relatively imprecise digital pulses convey analog signal with relatively high precision. Amplifier implements sigma-delta modulation scheme. Circuit used wherever conventional amplifier needed. Includes medical instrumentation, switching-type power supplies, and other applications in which input voltages must be measured in presence of large common-mode voltages.

Harres, Daniel N.↗
NASA NTRS2010

Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

Patterson, Richard L.↗
DOE OSTI2025

InAs sidewall tunnel diodes enabled by surface states

Negative differential resistance (NDR), where the device current decreases with increasing bias voltage, is a representative phenomenon where quantum mechanics induces counterintuitive physical behavior and offers promising applications such as high-frequency oscillators, amplifiers, and multilevel logic circuits. While the NDR behavior has been extensively studied in various materials and devices, the role of surface properties in NDR, particularly in InAs-based diodes, remains underexplored. In this work, we report the observation of NDR in vertically structured InAs p + n diodes that exhibit a peak-valley current ratio of ∼6, which is suitably high for applications. Circumference-normalized current–voltage characterization revealed that the NDR originates from band-to-band tunneling between the valence band of p + -InAs and the conduction band of an n + -InAs surface, where the n + surface is due to surface states on otherwise n − -InAs. In addition, by comparing devices with various surface passivation methods (without intentional passivation, benzocyclobutene polymer, and silicon nitride), we found that the surface termination significantly affects the NDR characteristics. We present an equivalent circuit model to explain the observed device behavior. These findings offer insights into surface-enabled NDR phenomena and present new knobs for engineering NDR devices.

Circuit theorems↗
NASA NTRS1966

Digitally controlled pulse-level discriminator operates over wide voltage range

Low power drain discriminator circuit generates an output pulse when an input pulse exceeds a discrete digitally controlled threshold voltage. The discriminator operates over a wide linear or nonlinear range of threshold levels. It uses several amplifier stages ahead of a fixed-reference threshold detector.

Cancro, C. A.↗
NASA NTRS1967

Vibrator elapsed time is automatically controlled

Circuit determines elapsed operating time for vibrators when three vibrators are located in one room and are powered by two amplifiers through either of two control systems. It operates the control system elapsed time clocks only when voltage is applied to the vibrator armatures.

Burowick, E. A.↗