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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

On the Feasibility of Deep Geothermal Wells Using Numerical Reservoir Simulation

This study examines the geothermal energy extraction potential from the basement rock within the Denver–Julesburg Basin, focusing on the flow performance and heat extraction efficiency of different geothermal well configurations. It specifically compares U-shaped, V-shaped, inclined V-shaped, and pipe-in-pipe configurations against enhanced geothermal system setups. Through numerical modeling, we evaluated the thermal behavior of these systems under various operational scenarios and fracture conditions. The results suggest that while closed-loop systems offer moderate temperature increases, Enhanced geothermal system configurations show substantial potential for high-temperature extraction. This underscores the importance of evaluating well configurations in complex geological settings. The insights from this study aid in strategic geothermal energy planning and development, marking significant advancements in geothermal technology and setting a foundation for future explorations and optimizations.

15 GEOTHERMAL ENERGY↗
DOE OSTI2024

The Carousel Lens: A Well-modeled Strong Lens with Multiple Sources Spectroscopically Confirmed by VLT/MUSE

Over the past few years alone, the lensing community has discovered thousands of strong lens candidates, and spectroscopically confirmed hundreds of them. In this time of abundance, it becomes pragmatic to focus our time and resources on the few extraordinary systems, in order to most efficiently study the Universe. In this paper, we present such a system: DESI-090.9854-35.9683, a cluster-scale lens at z l = 0.49, with seven observed lensed sources around the core, and additional lensed sources further out in the cluster. From the number and the textbook configuration of the lensed images, a tight constraint on the mass potential of the lens is possible. This would allow for detailed analysis on the dark and luminous matter content within galaxy clusters, as well as a probe into dark energy and high-redshift galaxies. We present our spatially resolved kinematic measurements of this system from the Very Large Telescope Multi Unit Spectroscopic Explorer, which confirm five of these source galaxies (in ascending order, at z s = 0.962, 0.962, 1.166, 1.432, and 1.432). With previous Hubble Space Telescope imaging in the F140W and F200LP bands, we also present a simple flux-based lens model consisting of two power-law profiles that, for a cluster lens, well models the five lensed arc families with redshifts. We determine the mass to be M(< θ E ) = 4.78 × 10 13 M ⊙ for the primary mass potential. From the model, we extrapolate the redshift of one of the two source galaxies not yet spectroscopically confirmed to be at $z_s = 4.52^{+1.03}_{-0.71}$.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1965

Removable well in reaction flask facilitates carbon dioxide collection

Removable plastic well with a flange that seats on the rim of an Erlenmeyer screwcap flask aids quantitative collection of carbon dioxide liberated in the flask. The well can be removed without danger of cross-contamination. It can collect other gases using appropriate absorbents.

Source record↗
NASA NTRS1971

Noninteracting Fermi gas in a square-well potential.

The problem of a noninteracting Fermi gas in a finite square-well potential is solved analytically in the limit that the well becomes infinitely wide. The errors of previous authors using this model as a first approximation to the problem of a simple metal with surfaces are pointed out.

Nash, C. E.↗
NASA NTRS1981

Sidewall penetrator for oil wells

Penetrator bores horizontal holes in well casing to increase trapped oil drainage. Several penetrators operated by common drive are inserted into well at once. Shaft, made from spiraling cable, rotates and thrusts simultaneously through rigid curvilinear guide tube forcing bit through casing into strata. Device pierces more deeply than armor-piercing bullets and shaped explosive charges.

Collins, E. R., Jr.↗
NASA NTRS1983

Expected cycle life vs. depth of discharge relationships of well-behaved single cells and cell strings

The present investigation is concerned with the factors which might influence the cycle life vs. depth of discharge relationship, taking into account the rate of loss of cell capacity, the amount of excess capacity built into the cells, and the penalty in capacity loss resulting from the use of deep depths of discharge. 'First principles' are used to develop a cell life model for somewhat arbitrary conditions. This model is then used to estimate the cycle life vs. depth of discharge relationships for 'well behaved' cells. The stochastic variations associated with groupings of single cells are then introduced to the battery pack cycle life model. The term 'well behaved' cell is used to describe a single cell which does not suffer any abrupt failure mode during the course of its operation. It gradually loses capacity for any number of the usual reasons at a rate which is the product of the fractional depth of discharge and a factor which is characteristic of the cell under consideration.

Thaller, L. H.↗
NASA NTRS1986

Field-dependent linewidths and photoluminescence energies in GaAs-AlGaAs multiquantum well modulators

Photoluminescence linewidths and transition energies have been measured in GaAs-AlGaAs multiple quantum wells with large (equal to or greater than 160 A) barrier widths as a function of applied transverse electric field. The experimental data agree well with values calculated by using a recently developed variational technique. It is apparent that heterointerface roughness is the dominant line broadening mechanism. The emission intensity decreases rapidly with field, principally due to carrier tunneling at high fields. At 80 kV/cm a shift of 20 meV in the emission energy is observed.

Juang, F.-Y.↗
NASA NTRS1987

Anisotropic transport in modulation doped quantum well structures

The degree of anisotropy in the anisotropic electron transport that has been observed in GaAs modulation-doped quantum wells grown by MBE on Al(0.3)Ga(0.7)As is related to the thickness and growth parameters of this substrate, which is grown just prior to the inverted interface. It is presently observed that the inverted interface has an anisotropic roughness which affects the 77 K low field electron transport parallel to the interface, and gives rise to anisotropic electron scattering in the GaAs modulation-doped quantum well.

Radulescu, D. C.↗
NASA NTRS1987

Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

Radulescu, D. C.↗
NASA NTRS1987

Nonlinear intersubband optical absorption in a semiconductor quantum well

The third-order nonlinear intersubband absorption in a semiconductor quantum well is studied theoretically using the density matrix formalism including intrasubband relaxation. It is shown that the peak absorption is reduced by half for an optical intensity 1 MW/sq cm for the well size L = 126.5 A with 3.0 x 10 to the 16th/cu cm electrons.

Ahn, D.↗
NASA NTRS1987

InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide

A monolithically integrated guided-wave modulator has been realized by using molecular-beam epitaxial regrowth and ion-milling techniques. The guiding and modulating regions consist, respectively, of In-doped GaAs and GaAs/In(0.34)Ga(0.66)As strained-layer multiquantum wells. Modulation is achieved by field-enhanced electroabsorption in the multiquantum wells. The insertion loss of the modulator is 0.9 dB, and the transmission loss in the guides is less than or equal to 1 dB/cm. The temporal response of similar GaAs/InGaAs as-grown photodiodes to pulsed laser excitation is characterized by a rise time of 115 psec.

Das, Utpal↗
NASA NTRS1989

Photovoltaic-Driven Multiple-Quantum-Well Modulator

Proposed high-performance spatial light modulator consists of multiple-quantum-well, strain-layer superlattice similar to one described in accompanying article, "Strain-Layer-Superlattice Light Modulator" (NPO-16915). Device differs from other one, operates in transmission rather than in resonant reflection and therefore includes only one stack of GaAs/InAs layers having total thickness less than penetration depth (1 to 2 micrometer) of optical modulating signal. Alternating, semitransparent semiconductor layers contain space-charge barriers forming quantum wells. Modulating light (with photon energy greater than semiconductor band gap) induces photovoltaic action, which affects transmission of modulated light (having photon energy less than band gap).

Maserjian, Joseph↗
NASA NTRS1989

Optically controlled absorption modulator based on state filling of In(x)Ga(1-x)As/GaAs quantum wells

The first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped In(x)Ga(1-x)As/GaAs multiple quantum well structure is reported. Differential absorption of approximately 10,000/cm is observed in the quantum wells of the test structure at saturation pump powers. Photoluminescence and time-resolved modulation measurements confirm the predicted behavior of carrier recombination and give a measure of enhanced carrier lifetime of approximately 1 ms. These initial results show the potential for developing these structures into optically addressed spatial light modulators.

Iannelli, J. M.↗
NASA NTRS1989

Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

A novel approach to determining absorption coefficients in thin films using luminescence is described. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. The absorption edge for GaAs/AlGaAs multiple quantum well structures, with quantum well widths ranging from 54 to 193 A is examined. Urbach (1953) parameters and excitonic linewidths are tabulated.

Kost, Alan↗
NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗
NASA NTRS1990

An isolated, well-defined infrared cirrus cloud

High spatial resolution H I measurements of a high-latitude FIR cirrus cloud (l = 9 deg, b = 51 deg) were obtained with the Arecibo 310 m telescope. The cloud is well isolated spatially and has a velocity well-separated from other H I clouds, providing an ideal laboratory for studying diffuse interstellar clouds. The Iv(100)/N(H) and Iv(60)/Iv(100) ratios are consistent with the Draine and Anderson model which includes a distribution of grain sizes down to 3 A. The small grains undergo transient heating and affect the 60 micron FIR continuum emission. Current models, however, underpredict Iv(12)/Iv(100) and Iv(25)/Iv(100) by more than a factor of 2. The effects small grains have on the thermal equilibrium of diffuse interstellar clouds are discussed.

Herter, T.↗
NASA NTRS1989

Low-cost DH and quantum well laser array development

The intial results of a program aimed at developing low-cost diode laser arrays for use as solid-state laser pumps are reported. MOCVD is used to demonstrate excellent run-to-run reproducibility in emission wavelength, threshold current density, and quantum efficiency. For this first experimental series, J(th) values of approximately 1310 Amps/sq cm were obtained for broad-area unthinned devices from the growth runs. Differential quantum efficiencies of between 41 percent and 47 percent were measured on the non-facet-coated devices from all four runs. Single quantum well, separate confinement heterostructure lasers fabricated from wafers grown in the same MOCVD reactor exhibited near single-mode emission, with J(th) values of approximately 300 Amps/sq cm. Photoluminescence data confirm quantum well widths of 80 A and 150 A for two different MOCVD growth runs.

Linden, Kurt J.↗