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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

High-Loading Single-Atom Catalyst via On-Surface Synthesis of a Metal-Covalent Organic Framework for Oxygen Reduction Reaction

The development of active catalysts with both high metal efficiency and use of earth abundant metals is the ultimate goal for advancing the required commercially viable and sustainable energy conversion technologies of the future. Metal-organic frameworks (MOFs) have emerged as promising candidates due to their high surface area and tunable active sites. Here, this study aims to fabricate a new type of high metal loading single-atom catalysts (SACs) based on 2D metal-organic covalent organic frameworks (MCOFs) with uniform, active and stable Fe-N 3 sites. The MCOFs were synthesized through an on-surface polymerization process using Fe and melamine as precursors. The polymerization steps were characterized using operando high-pressure scanning tunneling microscopy (HP-STM), in situ X-ray photoelectron spectroscopy (XPS), low-temperature STM (LT-STM), and computational calculations. The synthesized MCOFs demonstrated favorable adsorption and activation of O 2 at the Fe-N 3 sites, and it is predicted to be active for the oxygen reduction reaction (ORR). The surface chemistry and functionality of 2D MCOFs can be rationally designed by varying the metal atoms and organic linkers, offering a versatile platform for diverse applications.

25 ENERGY STORAGE↗
DOE OSTI2022

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Coupling of electroelastic dynamics and direct contact ultrasonic drying formulation for annular piezoelectric bimorph transducers

A newly developed technique for drying clothes without thermal energy has been developed through the utilization of ultrasonic vibrations from piezoelectric transducers. The novel technique incorporates the actuation of a thin stainless steel disk in contact with wet fabric via annular piezoelectric rings, where water in the liquid form is atomized, transported through microchannels in the disk, and ejected as a mist. In such a system, resonance matching between the actuation portion of the transducer and the portion contacting fabric must be realized, with theoretical results from the developed electromechanical model showing a reduction in energy consumption by 50% when resonance matching is achieved. The electrically coupled distributed parameter model for an annular bimorph piezoelectric transducer is developed for optimization of ultrasonic drying technology. The thickness mode vibrations are shown to dominate the behavior of the system, where the analytically developed model can be optimized to increase the output acceleration of the transducer, thus increasing drying performance. Here, the electromechanical equation developed will be connected to the drying rates of fabrics in contact with said vibrations, where the novelty of the coupled equations and its description of the physics of ultrasonic drying will be discussed.

36 MATERIALS SCIENCE↗
NASA NTRS2006

MISSE PEACE Polymers Atomic Oxygen Erosion Results

Forty-one different polymer samples, collectively called the Polymer Erosion and Contamination Experiment (PEACE) Polymers, have been exposed to the low Earth orbit (LEO) environment on the exterior of the International Space Station (ISS) for nearly 4 years as part of Materials International Space Station Experiment 2 (MISSE 2). The objective of the PEACE Polymers experiment was to determine the atomic oxygen erosion yield of a wide variety of polymeric materials after long term exposure to the space environment. The polymers range from those commonly used for spacecraft applications, such as Teflon (DuPont) FEP, to more recently developed polymers, such as high temperature polyimide PMR (polymerization of monomer reactants). Additional polymers were included to explore erosion yield dependence upon chemical composition. The MISSE PEACE Polymers experiment was flown in MISSE Passive Experiment Carrier 2 (PEC 2), tray 1, on the exterior of the ISS Quest Airlock and was exposed to atomic oxygen along with solar and charged particle radiation. MISSE 2 was successfully retrieved during a space walk on July 30, 2005, during Discovery s STS-114 Return to Flight mission. Details on the specific polymers flown, flight sample fabrication, pre-flight and post-flight characterization techniques, and atomic oxygen fluence calculations are discussed along with a summary of the atomic oxygen erosion yield results. The MISSE 2 PEACE Polymers experiment is unique because it has the widest variety of polymers flown in LEO for a long duration and provides extremely valuable erosion yield data for spacecraft design purposes.

deGroh, Kim, K.↗
DOE OSTI2020

Simultaneously Integrating Single Atomic Cobalt Sites and Co 9 S 8 Nanoparticles into Hollow Carbon Nanotubes as Trifunctional Electrocatalysts for Zn–Air Batteries to Drive Water Splitting

The development of rechargeable metal–air batteries and water electrolyzers are highly constrained by electrocatalysts for the oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER). However, the construction of efficient trifunctional electrocatalysts for ORR/OER/HER are highly desirable yet challenging. Herein, hollow carbon nanotubes integrated single cobalt atoms with Co9S8 nanoparticles (CoSA + Co 9 S 8 /HCNT) are fabricated by a straightforward in situ self-sacrificing strategy. The structure of the CoSA + Co 9 S 8 /HCNT are verified by X-ray absorption spectroscopy and aberration-corrected scanning transmission electron microscopy. Theoretical calculations and experimental results embrace the synergistic effects between Co 9 S 8 nanoparticles and single cobalt atoms through optimizing the electronic configuration of the CoN4 active sites to lower the reaction barrier and facilitating the ORR, OER, and HER simultaneously. Consequently, rechargeable liquid and all-solid-state flexible Zn–air batteries based on CoSA + Co 9 S 8 /HCNT exhibit remarkable stability and excellent power density of 177.33 and 51.85 mW cm -2 , respectively, better than Pt/C + RuO 2 counterparts. Moreover, the as-fabricated Zn–air batteries can drive an overall water splitting device assembled with CoSA + Co 9 S 8 /HCNT and achieve a current density of 10 mA cm -2 at a low voltage of 1.59 V, also superior to Pt/C + RuO 2 . Therefore, we conclude, this work presents a promising approach to an efficient trifunctional electrocatalyst toward practical applications.

25 ENERGY STORAGE↗
DOE OSTI2020

Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells

Metal halide perovskite solar cells (PSCs) have rapidly evolved over the past decade to become a photovoltaic technology on the cusp of commercialization. In the process, numerous fabrication strategies have been explored with the goal of simultaneously optimizing for device efficiency, stability, and scalability. Atomic layer deposition (ALD) and chemical vapor deposition (CVD) have proven to be effective tools for the fabrication of various components of PSCs. This review article examines the application of ALD and CVD for the deposition and modification of charge transport layers, passivation layers, absorber materials, encapsulants, and electrodes. It outlines the use of these vapor deposition techniques in state-of-the-art, multi-junction solar cell devices, and also contains a discussion of the stability of metal halide perovskite materials under ALD and CVD conditions based on in situ characterization reported in literature. Finally, this article concludes with insights into future ALD and CVD research directions that could be undertaken to further aid the deployment of PSCs in emerging solar photovoltaic markets.

14 SOLAR ENERGY↗
DOE OSTI2022

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Abstract Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface‐mediated growth process for the controlled synthesis of high‐quality monolayer hBN is proposed and further demonstrated. It is discovered that the in‐plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single‐domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep‐ultraviolet emission at 6.12 eV stems from the 1s‐exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer‐scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.

2D heterostructures↗
DOE OSTI2020

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Abstract New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm 2 V −1 s −1 , due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm 2 V –1 s –1 and a subthreshold slope of 0.29 V dec –1 . Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐ k gate insulator (ALD Al 2 O 3 ), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.

Allemang, Christopher R.↗
DOE OSTI2022

CFD simulations of electric motor end ring cooling for improved thermal management

Proper thermal management of an electric motor for vehicle applications extends its operating range. One cooling approach is to impinge Automatic Transmission Fluid (ATF) onto the rotor end ring. Increased ATF coverage correlates to enhanced heat transfer. Computational Fluid Dynamics (CFD) analytical tools provide a mechanism to assess motor thermal management prior to hardware fabrication. The complexity of the fluid flow (e.g., jet atomization, interface tracking, wall impingement) and heat transfer makes these simulations challenging. Computational costs are high when solving these flows on high-speed rotating meshes. Typically, a Volume-of Fluid (VOF) technique (i.e., two-fluid system) is used to resolve ATF dynamics within this rotating framework. Suitable numerical resolution of the relevant physics for thin films under strong inertial forces at high rotor speeds is computationally expensive, further increasing the run times. In this work, a numerical study of rotor-ring cooling by ATF is presented using a patent automated Cartesian cut-cell based method coupled with Automatic Mesh Refinement (AMR). This approach automatically creates the Cartesian mesh on-the-fly and can effectively handle complex rotating geometries by adaptively refining the mesh based on local gradients in the flow field which results in better resolution of the air-ATF interface. A Single non-inertial Reference Frame (SRF) approach is used to account for the rotating geometry and to further improve the overall computational efficiency. Quasi-steady state conditions are targeted in the analysis of the results. Important physics such as ATF jet structure, velocity detail near the air-jet interface, ATF coverage/accumulation on the ring surface, and cooling capacity are presented for a low-resolution Reynolds averaged Navier-Stokes (RANS), high-resolution RANS, and high-resolution Large-Eddy Simulation (LES) models. Computations are scaled over hundreds of cores on a supercomputer to maximize turnaround time. Each numerical approach is shown to capture the general trajectory of the oil jet prior to surface impingement. The high-resolution LES simulation, however, is superior in capturing small scale details and heat transfer between the free jet and surrounding air.

42 ENGINEERING↗
DOE OSTI2020

Intrinsic Photoconductivity of few-layered ZrS 2 Phototransistors via Multiterminal Measurements

We report intrinsic photoconductivity studies on one of the least examined layered compounds, ZrS 2 .Few-atomic layer ZrS 2 field-effect transistors were fabricated on the Si/SiO 2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurations under the illumination of 532 nm laser source. We measured photocurrent as a function of the incident optical power at several source-drain (bias) voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to that in the two-terminal configuration. For an incident optical power of 90 nW, the estimated photosensitivity and the external quantum efficiency (EQE) measured in two-terminal configuration are 0.5 A/W and 120%, respectively, under a bias voltage of 650 mV. Under the same conditions, the four-terminal measurements result in much higher values for both the photoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. This significant improvement in photoresponsivity and EQE in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface, which greatly impacts the carrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS 2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗
NASA NTRS1986

Development of composite tube protective coatings

Protective coatings for graphite/epoxy (Gr/Ep) tubular structures proposed for the Space Station are evaluated. The program was divided into four parts; System Definition, Coating Concept Selection and Evaluation, Scale-up and Assembly, and Reporting. System Definition involved defining the structural and environmental properties required of the Gr/Ep tubes. The prepreg and ply sequence selected was a P75S/934 (O2, + or - 20, O2)sub s layup which meets the various structural requirements of the Space Station. Coating Concept and Selection comprised the main emphasis of the effort. Concepts for protectively coating the Gr/Ep tubes included the use of metal foil and electroplating. The program results demonstrated that both phosphoric and chromic acid anodized Al foil provided adequate adhesion to the Gr/Ep tubes and stability of optical properties when subjected to atomic oxygen and thermal cycling representative of the LEO environment. SiO2/Al coatings sputtered onto Al foils also resulted in an excellent protective coating. The electroplated Ni possessed unacceptable adhesion loss to the Gr/Ep tubes during atomic oxygen testing. Scale-Up and Assembly involved fabricating and wrapping 8-ft-long by 2-in-diameter Gr/EP tubes with chromic acid anodized foil and delivering these tubes, along with representative Space Station erectable end fittings, to NASA LaRC.

Dursch, H.↗
NASA NTRS1996

Scaling Properties of Algorithms in Nanotechnology

At the present time, several technologies are pressing the limits of microminiature manufacturing. In semiconductor technology, for example, the Intel Pentium Pro (which is used in the Department of Energy's ASCI 'red' parallel supercomputer system) and the DEC Alpha 21164 (which is used in the CRAY T3E) both are fabricated using 0.35 micron process technology. Recently Texas Instruments (TI) announced the availability of 0.25 micron technology chips by the end of 1996 and plans to have 0.18 micron devices in production within two years. However, some significant challenges lie down the road. These include the skyrocketing cost of manufacturing plants, the 0.1 micron foreseeable limit of the photolithography process, quantum effects, data communication bandwidth limitations, heat dissipation, and others. Some related microminiature technologies include micro-electromechanical systems (MEMS), opto-electronic devices, quantum computing, biological computing, and others. All of these technologies require the fabrication of devices whose sizes are approaching the nanometer level. As such they are often collectively referred to with the name 'nanotechnology'. Clearly nanotechnology in this general sense is destined to be a very important technology of the 21st century. The ultimate dream in this arena is 'molecular nanotechnology', in other words the fabrication of devices and materials with most or all atoms and molecules in a pre-programmed position, possibly placed there by 'nano-robots'. This futuristic capability will probably not be achieved for at least two decades. However, it appears that somewhat less ambitious variations of molecular nanotechnology, such as devices and materials based on 'buckyballs' and 'nanotubes' may be realized significantly sooner, possibly within ten years or so. Even at the present time, semiconductor devices are approaching the regime where quantum chemical effects must be considered in design.

Saini, Subhash↗
DOE OSTI2024

Support size regulated ruthenium-sulfoacid-nitrogen sites intensify cellulose hydrogenolysis to 1,2-propylene glycol

Rational design of metal-acid-base multifunctional catalysts for upgrading cellulose to 1,2-propylene glycol (1,2-PG) is of great significance for building a sustainable world. However, it is time-consuming and tedious to regulate metal-acid-base sites to balance major reactions to render a high 1,2-PG yield. We herein report support size simultaneously regulated ruthenium-sulfoacid-nitrogen (Ru–SO 3 H–N) sites for cellulose hydrogenolysis to high yield 1,2-PG. Originated from the depolymerization and reassembly of zinc-1,3,5-benzenetricarboxylic acid (ZnBTC) fiber with zeolitic imidazolate framework (ZIF-8) in water, 2-methylimidazole infiltrated nanorod (ZnBTC(mIM)) with a varied aspect ratio was fabricated by varying the feed ratio of ZIF-8/ZnBTC. Upon being pyrolyzed, sulfonated and impregnated with Ru ions, the supported sites were tailored in terms of Ru single-atom/nanocluster ratio, SO 3 H acidity and N basicity. Further, the elaborately fabricated catalyst delivers 32.3% yield of 1,2-PG, corresponding to a high productivity of 67.71 mol h -1 g Ru -1 and a large turnover number of 34193, two and three orders of magnitude higher than those by using other Ru-containing catalytic systems for cellulose hydrogenolysis. The excellent performance can be attributed to optimized electronic and molecular structure of Ru–SO 3 H–N sites that can improve rate-determining cellulose hydrolysis/fructose hydrogenolysis, pivotal glucose isomerization with others to proceed at a matched rate. This study opens a new avenue to facilely tailor the metal-acid-base sites by rational design of size controlled supporting matrix.

1,2-Propylene glycol↗
DOE OSTI2020

Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators

Niobium nitride (NbN) is a useful material for fabricating detectors because of its high critical temperature and relatively high kinetic inductance. In particular, NbN can be used to fabricate nanowire detectors and mm-wave transmission lines. When deposited, NbN is usually sputtered, leaving room for concern about uniformity at small thicknesses. In this work, we present atomic layer deposition niobium nitride (ALD NbN) as an alternative technique that allows for precision control of deposition parameters such as film thickness, stage temperature, and nitrogen composition. Atomic-scale control over film thickness admits a high degree of uniformity for films 4–30 nm thick; control over deposition temperature gives rise to growth rate changes, which can be used to optimize film thickness and critical temperature. In order to charac- terize ALD NbN in the radio-frequency regime, we construct single-layer micro- wave resonators and test their performance as a function of stage temperature and input power. ALD processes can admit high resonator quality factors, with ≥ 43% of resonators above Q i = 10 6 , which in turn increase detector multiplexing capabilities. i Furthermore, we find critical temperatures in the range of 7.5–10.9 K that vary as a function of cycle count and deposition temperature.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Entropy-stabilized single-atom Pd catalysts via high-entropy fluorite oxide supports

Single-atom catalysts (SACs) have attracted considerable attention in the catalysis community. However, fabricating intrinsically stable SACs on traditional supports (N-doped carbon, metal oxides, etc.) remains a formidable challenge, especially under high-temperature conditions. Here, we report a novel entropy-driven strategy to stabilize Pd single-atom on the high-entropy fluorite oxides (CeZrHfTiLa)O x (HEFO) as the support by a combination of mechanical milling with calcination at 900 °C. Characterization results reveal that single Pd atoms are incorporated into HEFO (Pd1@HEFO) sublattice by forming stable Pd–O–M bonds (M = Ce/Zr/La). Compared to the traditional support stabilized catalysts such as Pd@CeO 2 , Pd 1 @HEFO affords the improved reducibility of lattice oxygen and the existence of stable Pd–O–M species, thus exhibiting not only higher low-temperature CO oxidation activity but also outstanding resistance to thermal and hydrothermal degradation. This work therefore exemplifies the superiority of high-entropy materials for the preparation of SACs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Orientation-selected micro-pillar compression of additively manufactured 316L stainless steels: Comparison of as-manufactured, annealed, and proton-irradiated variants

In this work, irradiation response and deformation mechanisms of additively manufactured (AM) 316L stainless steel were studied by atomic scale characterization and micro-pillar compression. The AM 316L stainless steels were fabricated by direct energy deposition, a laser-based additive manufacturing process. Irradiation with 2 MeV protons at 360°C was performed to create ~1.8 displacements-per-atom (dpa) damage in AM 316L. Deformation behaviors of the as-manufactured, annealed, and proton-irradiated variants were studied, focusing on the effects of manufacturing-induced pores, residual stress, and irradiation-introduced defects (dislocation loops and voids). Micro-pillars were prepared from grains of pre-selected orientation, avoiding contributions of grain boundaries and allowing determination of resolved shear stress on {111} glide planes. Transmission electron microscopy was used to characterize the pre- and post-deformation microstructure. It was found that in the as-manufactured alloy variant, moving dislocations were the major deformation carrier, with noticeable blocking by fabrication-induced pores, In the annealed variant, hardness was reduced, and deformation was also accomplished by dislocation gliding. In the proton-irradiated variant, significant twinning was observed. Comparing measured resolved shear stress and predicted critical stress for dislocation dissociation, we conclude that irradiation hardening became high enough to activate twinning. Therefore, the deformation mechanism changes from dislocation gliding to twinning. The study is important for both processing optimization and performance evaluation of AM alloys for reactor applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High- Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO 2

Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. In this work, we developed an integrated photonics platform based on templated atomic layer deposition of TiO 2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach is suitable for a broad range of both wavelengths and substrates and can enable high-cooperativity interfacing between cavity photons and coherent defects in diamond or silicon carbide, rare earth ions, or other material systems.

42 ENGINEERING↗