Procedure for applying reflective vapor barrier to polyurethane foam insulation panels
Application of reflective vapor barrier to polyurethane foam insulation panels
FOAMED MATERIAL↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Research and development in CdS photovoltaic cells Third quarterly report, 29 Dec. 1965 - 29 Mar. 1966
Barrier formation studies of copper sulfide and cadmium sulfide in photovoltaic cells
PHOTOVOLTAIC CELL↗
Effect of dielectric and high-resistivity barriers on the superconducting transition temperature of thin films.
Thin films deposited onto substrates cooled to low temperatures investigated for transition temperature in structures of superconductor- dielectric-superconductor
SANDWICH CONSTRUCTION↗
Effects of ultrathin oxides in conducting MIS structures on GaAs
Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.
Childs, R. B.↗
Development of Low Cost Contacts to Silicon Solar Cells
Commercial electroless Cu solutions were used. Satisfactory adhesion (and fairly good cell performance) resulted from the use of thin layers of barrier metals such as Au, Cr or Pd. In these tests, photoresist masks were used to contact silicon P-type slices with diffused N+ and alloyed P+ surfaces; and electrolytic Cu solution was used to build up the contact thickness to provide good cell behavior. In addition some cells with evaporated Cr-Cu contacts were also made (along with evaporated Ti-Pd-Ag contacts as controls), with the intention of subjecting cells to gradually increasing heat-treatments, to determine whether Cu causes the cells to be inherently unstable.
Iles, P. A.↗
Photonitride passivating coating for IC's
Increased reliability and simplified fabrication result from postassembly preencapsulation passivation process. Photonitride reaction chamber receives silane, ammonia, and mercury from mixing manifold to form passivating coating on IC's. Photonitride layer is barrier to moisture and penetration by mobile ions, and helps to protect IC devices subjected to severe mechanical handling or circuit repair procedures. Process is compatible with variety of wire-bonded lead frame assemblies. Advantages over plasma and sputtering deposition processes are low deposition temperature and zero stray radiation and ion levels.
Hall, T. C.↗
Schottky-Barrier Photocell With Intermediate Metal Layer
Device output and durability increased. Photosensitive GaAs Schottkybarrier device modified by addition of intermediate layer of refractory or alkaline earth metal. Photovoltaic cells and photosensors made with new design put out higher short-circuit currents and better able to withstand rigors of handling and connection to other circuit components.
Alcorn, G. E.↗
Effect of hot electrons on the polar wind
A semikinetic model is used to describe the steady state collisionless flow of H(+), O(+), and electrons along diverging geomagnetic field lines in the high-latitude topside ionosphere. The effect that hot electron populations have on the polar wind is emphasized. Several such populations are considered, including the polar rain, polar showers, and polar squall. Hot electron densities and temperatures are calculated from the characteristic energy and flux measurements. The results indicate that the hot/cold electron temperature ratio varies from 10 to 10,000 and that the hot/cold electron density ratio varies from 0.001 to 0.1 at the baropause. For higher hot electron temperatures and a greater percentage of hot electrons, there is a discontinuity in the kinetic solution, which indicates the presence of a sharp transition corresponding to a contact surface between the hot and cold electrons. Along this surface, a double-layer potential barrier exists which reflects the cold ionospheric electrons and prevents their penetrations to higher altitudes.
Barakat, A. R.↗
A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots
Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.
Bell, L. D.↗
NASA Tech Briefs, July 2008
Topics covered include: Torque Sensor Based on Tunnel-Diode Oscillator; Shaft-Angle Sensor Based on Tunnel-Diode Oscillator; Ground Facility for Vicarious Calibration of Skyborne Sensors; Optical Pressure-Temperature Sensor for a Combustion Chamber; Impact-Locator Sensor Panels; Low-Loss Waveguides for Terahertz Frequencies; MEMS/ECD Method for Making Bi(2-x)Sb(x)Te3 Thermoelectric Devices; Low-Temperature Supercapacitors; Making a Back-Illuminated Imager with Back-Side Contact and Alignment Markers; Compact, Single-Stage MMIC InP HEMT Amplifier; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Improved Sand-Compaction Method for Lost-Foam Metal Casting; Improved Probe for Evaluating Compaction of Mold Sand; Polymer-Based Composite Catholytes for Li Thin-Film Cells; Using ALD To Bond CNTs to Substrates and Matrices; Alternating-Composition Layered Ceramic Barrier Coatings; Variable-Structure Control of a Model Glider Airplane; Axial Halbach Magnetic Bearings; Compact, Non-Pneumatic Rock-Powder Samplers; Biochips Containing Arrays of Carbon-Nanotube Electrodes; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Neon as a Buffer Gas for a Mercury-Ion Clock; Miniature Incandescent Lamps as Fiber-Optic Light Sources; Bidirectional Pressure-Regulator System; and Prism Window for Optical Alignment. Single-Grid-Pair Fourier Telescope for Imaging in Hard-X Rays and gamma Rays Range-Gated Metrology with Compact Optical Head Lossless, Multi-Spectral Data Compressor for Improved Compression for Pushbroom-Typetruments.
Source record↗
Carrier Dynamics in Quantum Dot Structures with Different Interdot Spacings
The time of carrier transfer into a dot decreases with increasing dot density as well as with photoexcited carrier denstiy and temperature. It is suggested that potential barriers at the barrier, wetting layer and quantum dot interfaces hinder the carrier capture in low-density quantum dot structures.
quantum↗
Measurement techniques of thermoelectric devices and modules
Thermoelectric (TE) energy conversion devices are designed based on measured material transport properties. Although an ideal device efficiency can be calculated using the figure of merit, zT, the actual efficiency of a thermoelectric module is smaller and must be measured. TE device performance testing techniques and procedures are reviewed with a focus on energy conversion efficiency. One of the areas that attract less attention in the literature is the transition from basic thermoelectric materials research to the production of modules and devices. The effects of interface layers, diffusion barriers, thermal insulations, and heat sinks are reviewed. Finally, device performance from single couples to standard modules and long-term reliability are discussed.
Wang, Hsin↗
Barrier film constructions and methods of making same
A barrier film including a substrate; a base polymer layer adjacent to the substrate; an oxide layer adjacent to the base polymer layer; a adhesion-modifying layer adjacent to the oxide layer; and a top coat polymer layer adjacent to the adhesion-modifying layer. An optional inorganic layer can be applied over the top coat polymer layer. The inclusion of a adhesion-modifying layer provides for enhanced resistance to moisture and improved peel strength adhesion of the top coat polymer layer to the underlying barrier stack layers.
Spagnola, Joseph C.↗
Ultrathin corrosion barrier films enabled by layer-by-layer polymer clay nanocomposites.
Abstract not provided.
Schindelholz, Erik↗
Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions
We have used a lithography free technique for the direct fabrication of vertically stacked two-dimensional (2D) material-based tunnel junctions and characterized by Raman, AFM, XPS. We fabricated Graphene/h-BN/Graphene devices by direct deposition of graphene (bottom layer), h-BN (insulating barrier) and graphene (top layer) sequentially using a plasma enhanced chemical vapor deposition on Si/SiO 2 substrates. The thickness of the h-BN insulating layer was varied by tuning the plasma power and the deposition time. Samples were characterized by Raman, AFM, and XPS. The I-V data follows the barrier thickness dependent quantum tunneling behavior for equally doped graphene layers. The resonant tunneling behavior was observed at room temperature for oppositely doped graphene layers where hydrazine and ammonia were used for n-doping of one of the graphene layers. The resonance with negative differential conductance occurs when the band structures of the two electrodes are aligned. The doping effect of the resonant peak is observed for varying doping levels. The results are explained according to the Bardeen tunneling model.
2D-materials↗
GaAs Schottky barrier photo-responsive device and method of fabrication
A gallium arsenide photo-responsive device is provided with an intermediate, transparent layer of a refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer and a noble metal Schottky barrier layer. The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer is formed to cover the epitaxial layer, and the transparent metal layer followed by the noble metal layer are deposited upon the oxide layer. An interdigitated ohmic contact is then formed upon the noble metal layer.
Alcorn, G. E.↗
Effect of an Opaque Reflecting Layer on the Thermal Behavior of a Thermal Barrier Coating
A parametric study using a two-flux approximation of the radiative transfer equation was performed to examine the effects of an opaque reflective layer on the thermal behavior of a typical semitransparent thermal barrier coating on an opaque substrate. Some ceramic materials are semitransparent in the wavelength ranges where thermal radiation is important. Even with an opaque layer on each side of the semitransparent thermal barrier coating, scattering and absorption can have an effect on the heat transfer. In this work, a thermal barrier coating that is semitransparent up to a wavelength of 5 micrometers is considered. Above 5 micrometers wavelength, the thermal barrier coating is opaque. The absorption and scattering coefficient of the thermal barrier was varied. The thermal behavior of the thermal barrier coating with an opaque reflective layer is compared to a thermal barrier coating without the reflective layer. For a thicker thermal barrier coating with lower convective loading, which would be typical of a combustor liner, a reflective layer can significantly decrease the temperature in the thermal barrier coating and substrate if the scattering is weak or moderate and for strong scattering if the absorption is large. The layer without the reflective coating can be about as effective as the layer with the reflective coating if the absorption is small and the scattering strong. For low absorption, some temperatures in the thermal barrier coating system can be slightly higher with the reflective layer. For a thin thermal barrier coating with high convective loading, which would be typical of a blade or vane that sees the hot sections of the combustor, the reflective layer is not as effective. The reflective layer reduces the surface temperature of the reflective layer for all conditions considered. For weak and moderate scattering, the temperature of the TBC-substrate interface is reduced but for strong scattering, the temperature of the substrate is increased slightly.
Spuckler, Charles M.↗