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At least 235 records · Page 13

Pore-scale simulation of drying in porous media using a hybrid lattice Boltzmann: pore network model

In this work, a hybrid method coupling a pseudo-potential lattice Boltzmann model (LBM) and a pore network model (PNM) to simulate drying in porous media is proposed. Based on the watershed method, the porous medium is firstly decomposed into pore regions. According to the liquid–vapor phase distribution at a given time, the pore regions are further divided into four pore types, namely two-phase pores where a liquid–vapor interface exists, buffer pores next to the two-phase pores, single-liquid and single-vapor phase pores. The pseudo-potential LBM is used in the two-phase and buffer pores to simulate liquid drying and track the movement of the interfaces, while the single-phase PNM simulations are conducted in the buffer and single-phase pores to simulate vapor or liquid flow. LBM and PNM are coupled in the buffer pores through exchange of boundary information. The hybrid method is applied to simulate liquid drying in a porous medium. The whole-domain LBM simulation is considered as the reference solution to validate the hybrid method. Liquid saturation variation during the drying process and detailed phase and pressure distributions obtained by the two methods match quite well, demonstrating the accuracy of the hybrid method. For the specific case studied, the hybrid method saves more than 60% computational time compared to the whole-domain LBM simulation. In addition, the speedup of the hybrid method becomes more significant for a larger computational domain. In summary, the hybrid method developed in this work combines the accuracy of LBM and the efficiency of PNM to simulate drying in porous media at pore scale and can lead to significant reduction of computation time, thus allowing the pore-scale consideration of drying in larger porous systems.

36 MATERIALS SCIENCE↗

1.1 eV GaInAs Cell Development for Dual-Use Solar and 1070 nm Laser Power Converters

Dual-use power converter cells can receive solar and laser power simultaneously to generate current, an application relevant to space and terrestrial industries. This study investigates two concepts of solar cells optimized for dual-use 1070 nm laser and solar power conversion, a single-junction and triple-junction cell. Because it is bandgap-tuned for a 1070 nm laser, the 1.1 eV junction is incorporated into each of the two designs, making its development key to the success of both concepts. Efficiency data for a one junction GaInAs cell demonstrates a laser conversion efficiency of 38% at 1070nm wavelength without an anti-reflection coating. However, the single-junction device requires optimization to reduce short wavelength absorption of the broad solar spectrum. In both devices, the graded buffer layers in the GaInAs cell affects the cell's performance by reducing threading dislocations in the active junction. However, the buffer in the three-junction device also acts as a lateral transport layer and so affects the fill factor depending on its sheet resistance. By varying the buffer thickness, we demonstrate a direct relationship between buffer thickness and sheet resistance reduction, while considering implications to open-circuit voltages. We also performed resistance modeling to determine the optimal grid spacing and thickness of the grid fingers to minimize losses due to sheet resistance and grid shading.

junctions↗

Airport and Heliport Setbacks

This dataset represents a first-order quantification of airport and heliport setback requirements based on the Federal Aviation Administration (FAA) 14 CFR Part 77.9. It defines the following FAA notice criteria that we use to create runway buffers. Runways longer than 3,200 feet receive a 20,000 foot buffer, runways less than 3,200 feet long receive a buffer of 10,000 feet, and heliports receive a buffer of 5,000 feet. A setback requirement is a minimum distance from an airport or heliport that an energy project may be developed. For further details and citation, please refer to the publication linked below: Lopez, Anthony, Pavlo Pinchuk, Michael Gleason, Wesley Cole, Trieu Mai, Travis Williams, Owen Roberts, Marie Rivers, Mike Bannister, Sophie-Min Thomson, Gabe Zuckerman, and Brian Sergi. 2024. Solar Photovoltaics and Land-Based Wind Technical Potential and Supply Curves for the Contiguous United States: 2023 Edition. Golden, CO: National Renewable Energy Laboratory. NREL/TP-6A20-87843.

airport↗

Runtime extension for neural network training with heterogeneous memory

Systems, apparatuses, and methods for managing buffers in a neural network implementation with heterogeneous memory are disclosed. A system includes a neural network coupled to a first memory and a second memory. The first memory is a relatively low-capacity, high-bandwidth memory while the second memory is a relatively high-capacity, low-bandwidth memory. During a forward propagation pass of the neural network, a run-time manager monitors the usage of the buffers for the various layers of the neural network. During a backward propagation pass of the neural network, the run-time manager determines how to move the buffers between the first and second memories based on the monitored buffer usage during the forward propagation pass. As a result, the run-time manager is able to reduce memory access latency for the layers of the neural network during the backward propagation pass.

Mappouras, Georgios↗

1.1 eV GaInAs Cell Development for Dual-Use Solar and 1075 nm Laser Power Converters

Dual-use power converter cells can receive solar and laser power simultaneously to generate current, an application relevant to space and terrestrial industries. This study investigates two concepts of solar cells optimized for dual- use 1070 nm laser and solar power conversion, a single-junction and triple-junction cell. Because it is bandgap-tuned for a 1070 nm laser, the 1.1 eV junction is incorporated into each of the two designs, making its development key to the success of both concepts. Efficiency data for a one junction GaInAs cell demonstrates a laser conversion efficiency of 38% at 1070nm wavelength without an anti-reflection coating. However, the single-junction device requires optimization to reduce short wavelength absorption of the broad solar spectrum. In both devices, the graded buffer layers in the GaInAs cell affects the cell's performance by reducing threading dislocations in the active junction. However, the buffer in the three-junction device also acts as a lateral transport layer and so affects the fill factor depending on its sheet resistance. By varying the buffer thickness, we demonstrate a direct relationship between buffer thickness and sheet resistance reduction, while considering implications to open-circuit voltages. We also performed resistance modeling to determine the optimal grid spacing and thickness of the grid fingers to minimize losses due to sheet resistance and grid shading.

dual-use↗

A Synthesis Methodology for Intelligent Memory Interfaces in Accelerator Systems

Domain-specific systems improve the performance of a specific set of applications compared to general-purpose processing systems by deploying custom hardware accelerators. These hardware accelerators are generated using high-level synthesis (HLS) tools. The HLS tools enable a comprehensive design space exploration to optimize the compute performance of the generated accelerators. However, they often ignore the challenges of implementing the accelerators in a system-on-chip, particularly how the accelerators access memory. Our work introduces a buffering system design that improves accelerators' memory accesses by intelligently employing burst transactions to prefetch useful data from external memory to on-chip local buffers. Our design is dynamic, parametric, and transparent to the accelerators generated by HLS tools. We derive the buffering system parameters using appropriate compiler-based analysis passes and memory channel latency constraints. The proposed buffering system design results in, on average, 8.8x performance improvements while lowering memory channel utilization on average by 53.2% for a set of PolyBench kernels.

Limaye, Ankur M. (ORCID:0000000194062584)↗

Neutralization Short-Circuiting with Weak Electrolytes Erodes the Efficiency of Bipolar Membranes

Bipolar membranes (BPMs) are critical components of a variety of electrochemical energy technologies. Many electrochemical applications require the use of buffers to maintain stable, nonextreme pH environments, yet the impact of buffers or weak acids/bases on the electrochemical behavior of BPMs remains poorly understood. Here, our data for a cell containing weak electrolytes is consistent with internal pH gradients within the anion exchange membrane (AEM) or cation exchange membrane (CEM) component of the BPM that form via ionic short-circuiting processes at open-circuit. Short-circuiting results from the coupling of co-ion crossover and parasitic neutralization and leads to buffering of the bipolar interface. This phenomenon, which we term neutralization short-circuiting, serves to erode BPM efficiency by attenuating the open-circuit membrane voltage and introducing parasitic reverse bias currents associated with weak acid/base dissociation at the interface. These findings establish a mechanistic basis for the operation of BPM cells in the presence of weak acid/base electrolytes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Assessment of TMT Labeling Efficiency in Large-Scale Quantitative Proteomics: The Critical Effect of Sample pH

Isobaric labeling via tandem mass tag (TMT) reagents enables sample multiplexing prior to LC–MS/MS, facilitating high-throughput large-scale quantitative proteomics. Consistent and efficient labeling reactions are essential to achieve robust quantification; therefore, embedded in our clinical proteomic protocol is a quality control (QC) sample that contains a small aliquot from each sample within a TMT set, referred to as “Mixing QC.” This Mixing QC enables the detection of TMT labeling issues by LC–MS/MS before combining the full samples to allow for salvaging of poor TMT labeling reactions. While TMT labeling is a valuable tool, factors leading to poor reactions are not fully studied. We observed that relabeling does not necessarily rescue TMT reactions and that peptide samples sometimes remained acidic after resuspending in 50 mM HEPES buffer (pH 8.5), which coincided with low labeling efficiency (LE) and relatively low median reporter ion intensities (MRIIs). To obtain a more resilient TMT labeling procedure, we investigated LE, reporter ion missingness, the ratio of mean TMT set MRII to individual channel MRII, and the distribution of log 2 reporter ion ratios of Mixing QC samples. We discovered that sample pH is a critical factor in LE, and increasing the buffer concentration in poorly labeled samples before relabeling resulted in the successful rescue of TMT labeling reactions. Moreover, resuspending peptides in 500 mM HEPES buffer for TMT labeling resulted in consistently higher LE and lower missing data. By better controlling the sample pH for labeling and implementing multiple methods for assessing labeling quality before combining samples, we demonstrate that robust TMT labeling for large-scale quantitative studies is achievable.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

X-Ray and Electron Spectroscopy of the CdS/(Ag,Cu)(In,Ga)Se 2 Interface With RbF Treatment

The chemical and electronic structure of the CdS/(Ag,Cu)(In,Ga)Se 2 (CdS/ACIGSe) interface for thin-film solar cells, involving an absorber with a bulk [Ag]/([Ag]+[Cu]) (AAC) ratio of 0.06, a state-of-the-art RbF post-deposition treatment (PDT), and a chemical-bath deposited CdS buffer layer, is studied. To gain a detailed and depth-resolved picture of the CdS/ACIGSe interface, synchrotron- and laboratory-based hard X-ray, soft X-ray, and UV photoelectron spectroscopy, inverse photoemission spectroscopy, and X-ray emission spectroscopy are combined. Compared to the bulk of the absorber, a Cu- and Ga-poor ACIGSe surface is found, with a slightly increased AAC ratio. Strong evidence of a Rb–In–Se species (possibly with some Ag) at the absorber surface is compiled, with a corresponding band gap of 2.79 ± 0.12 eV. This finding is in clear contrast to comparable Ag-free Cu(In,Ga)Se 2 absorbers with RbF-PDT. The Rb–In–Se surface species is not removed by the (wet-chemical) CdS deposition process, while some Se diffuses into the CdS layer and segregates at its surface. The CdS buffer layer shows a band gap of 2.48 ± 0.12 eV, and a cliff (≈ -0.4 eV) is determined in the conduction band alignment at the interface between the Rb–In–Se species and the CdS buffer.

36 MATERIALS SCIENCE↗

Top Stack Optimization for Cu 2 BaSn(S, Se) 4 Photovoltaic Cell Leads to Improved Device Power Conversion Efficiency beyond 6%

Earth-abundant and air-stable Cu 2 BaSnS 4-x Se x (CBTSSe) and related thin-film absorbers are regarded as prospective options to meet the increasing demand for low-cost solar cell deployment. Devices based on vacuum-deposited CBTSSe absorbers have achieved record power conversion efficiency (PCE) of 5.2 % based on a conventional device structure using CdS buffer and i-ZnO/ITO window layers, with open-circuit voltage (V OC ) posing the major bottleneck for improving solar cell performance. The current study demonstrates a >20 % improvement in V OC (from 0.62 V to 0.75 V) and corresponding enhancement in PCE (from 5.1 % to 6.2 % without anti-reflection coating; to 6.5 % with MgF 2 anti-reflection coating) for solution-deposited CBTSSe solar cells. This performance improvement is realized by introducing an alternative successive ionic layer adsorption and reaction (SILAR)-deposited Zn 1-x Cd x S buffer combined with sputtered Zn 1-x Mg x O/Al-doped ZnO window/top contact layer, which offer lower electron affinities relative to the conventional CdS/i-ZnO/ITO stack and better matching with the low electron affinity of CBTSSe. A combined experimental (temperature- and light intensity-dependent V OC measurements) and device simulation (SCAPS-1D) evaluation points to the importance of addressing relative band offsets for both the buffer and window layers relative to the absorber in mitigating interfacial recombination and optimizing CBTSSe solar cell performance.

25 ENERGY STORAGE↗

Effect of Ionic Strength and Anion Identity on Rare‐Earth Element Chelation by Poly(acrylic acid)

Abstract Rare‐earth elements (REEs) are critical components of many modern technologies, but their efficient separation and purification continue to pose significant challenges. Metal‐binding polymers may enable the development of promising alternative approaches to conventional separation techniques (e.g., solvent extraction), and insights into the interactions between the metal ions and polymers in solution are crucial to such development. In this work, the effect of ionic strength on the chelation of REEs by poly(acrylic acid) is investigated using isothermal titration calorimetry (ITC) to measure the metal‐binding thermodynamics. ITC experiments revealed that when ionic strength increases from increasing the sodium acetate buffer strength, polymer‐REE binding becomes increasingly disfavored. However, when ionic strength is increased by the addition of sodium chloride, binding again becomes increasingly disfavored, but to a lesser extent than when ionic strength increases from increasing the buffer strength. Additionally, the reduction in binding affinity is enthalpically driven when ionic strength is raised with sodium chloride, while it is entropically driven when raised with sodium acetate buffer, suggesting competive binding by the acetate ions. These results highlight the importance of ionic strength in polymer‐metal binding thermodynamics and will guide the development of new processes for the purification of critical metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Separation of radium and actinium in acetic acid/acetate solutions using TK101 resin

Here, the uptake and elution behavior of Ra and Ac was studied on TK101 resin using acetic acid and acetate buffer (acetic acid/lithium acetate) solutions. There is high extraction of Ra (>10 3 ) over a wide range of acetic acid concentrations (0.02 to 4 M) with slightly lower extraction (>10 2 ) in the acetate buffer solutions (pH 3.9 to 5.6). The Ac extraction is considerably lower with a maximum D w of ∼100, and negligible extraction at high acetic acid concentrations (> 1 M) and in the acetate buffer solutions. The difference in D w can be leveraged for highly efficient separations of Ac from Ra, with no detectable Ra in the Ac fractions and high Ac yields (∼100%). These separations may be useful for radiopharmaceutical applications as the Ac purity is extremely high and the elution conditions can be optimized to be biologically safe and appropriate for chelation to molecules relevant to targeted alpha therapy.

and nuclear chemistry↗

Distributed fiber optic strain sensing of bending deformation of a well mockup in the laboratory

Well integrity is critical to the safety and success of subsurface energy exploration and management, as leakage of fluids from subsurface reservoirs is often induced by compromised wells. This study investigates bending deformation of a mockup of an oil/gas well that is subjected to loads expected in deviated wells under reservoir compaction and assesses the feasibility of utilizing distributed fiber optic strain sensing to monitor the deformation. Here, a well mockup, which consists of outer and inner steel pipes with a cemented annulus, is tested under three-point bending loading and its strain and curvature development is monitored by Brillouin optical time domain reflectometry/analysis (BOTDR/A) as well as optical frequency domain reflectometry (OFDR). The primary objective of this research is to assess the strain sensing performance of newly fabricated fiber optic cables and to identify key cable characteristics which could improve the quality of distributed strain measurements with BOTDR/A. Results show that the tight-buffered cable is best suited for strain sensing as its maximum errors in the strain measurement were -36% and -24% against conventional sensors at the maximum elastic and plastic bending loads, respectively, whereas those of the non-tight-buffered cable were -45% and -71%, respectively. Similar trends were obtained in the bending curvature measurement. The detailed design of the tight-buffered cable is presented to elucidate key characteristics of such a cable, which will facilitate accurate distributed strain sensing in oil and gas wells.

42 ENGINEERING↗

In-Use Interfacial Stability of Monoclonal Antibody Formulations Diluted in Saline i.v. Bags

The use of monoclonal antibodies (mAbs) for the treatment of a variety of diseases is rapidly growing each year. Many mAbs are administered intravenously using i.v. bags containing 0.9% NaCl (normal saline). We studied the aggregation propensity of these antibody solutions in saline and compared it with a low ionic strength formulation buffer. Furthermore, the mAb studied in this work is prone to aggregate, and is known to form a viscoelastic network at the air-solution interface. We observed that this interfacial elasticity increased when formulated in saline. In the bulk, the mAbs exhibited a tendency to self-associate that was higher in saline. We also studied the aggregation of the mAbs in the presence of polysorbate-20, typically added to formulations to mitigate interfacial aggregation. We observed that with surfactants, the presence of salt in the buffer led to a greater mAb adsorption at the interface and resulted in the formation of more particulate aggregates. Our results show that the addition of salt to the buffer led to differences in the interfacial aggregation in mAb formulations, showing that stress studies used to screen for mAb aggregation intended for i.v. administration should be performed in conditions representative of their intended route of administration.

60 APPLIED LIFE SCIENCES↗

Two-color polarization spectroscopy measurements of Zeeman state-to-state collision induced transitions of nitric oxide in binary gas mixtures

We investigated collision induced transitions in the (0, 0) band of the A2Σ+–X2Π electronic transition of nitric oxide (NO) using two-color polarization spectroscopy (TCPS). Two sets of TCPS spectra for 1% NO, diluted in different buffer gases at 295 K and 1 atm, were obtained with the pump beam tuned to the R11(11.5) and OP12(1.5) transitions. The buffer gases were He, Ar, and N2. The probe was scanned while the pump beam was tuned to the line center. Theoretical TCPS spectra, calculated by solving the density matrix formulation of the time-dependent Schrödinger wave equation, were compared with the experimental spectra. A collision model based on the modified exponential-gap law was used to model the rotational level-to-rotational level collision dynamics. A model for collisional transfer from an initial to a final Zeeman state was developed based on the difference in cosine of the rotational quantum number J projection angle with the z-axis for the two Zeeman states. Rotational energy transfer rates and Zeeman state collisional dynamics were varied to obtain good agreement between theory and experiment for the two different TCPS pump transitions and for the three different buffer gases. One key finding, in agreement with quasi-classical trajectory calculations, is that the spin-rotation changing transition rate in the A2Σ+ level of NO is almost zero for rotational quantum numbers ≥8. It was necessary to set this rate to near zero to obtain agreement with the TCPS spectra.

Chemistry↗

Superconducting phase of Ti x O y thin films grown by molecular beam epitaxy

Here we investigate the complex relationship between the growth conditions and the structural and transport properties of Ti x O y thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure P Ox for films grown on (0001)-Al 2 O 3 substrates at 850° C. A cubic c-TiO 1±δ buffer layer is formed for low O/Ti ratios, while a corundum cr-Ti 2 O 3 layer is formed under higher-oxidizing conditions. Metallicity is observed for c-TiO 1-δ buffer layers. The superconducting γ -Ti 3 O 5 Magnéli phase is found to nucleate on a c-TiO 1-δ buffer for intermediate POx conditions, and an insulator-superconducting transition is observed at 4.5 K (T$^{onset}_{C}$ = 6K) for 85 nm thick films. Strain relaxation of γ -Ti 3 O 5 occurs with increasing film thickness and correlates with a thickness-dependent increase in T C observed for Ti x O y thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

In Situ MOVPE Smoothing of Acoustically Spalled GaAs for Substrate Reuse

High material costs, especially for substrates, have limited the widespread adoption of III-V photovoltaics. A potential to reduce this cost is to reuse the III-V substrate via acoustic spalling, however this technique can leave a rough surface, hindering subsequent device performance. This research investigates the potential of using metalorganic vapor-phase epitaxy growth as a buffer layer to smooth the surface of acoustically spalled germanium and gallium arsenide (GaAs) substrates for improved III-V photovoltaic cell yield and performance, while retaining the maximum number of reuses of a substrate. Three potential smoothing layers were explored: lightly doped C:GaAs, highly doped Se:GaInP, and lightly doped Se:GaInP. C:GaAs showed the most promise as a smoothing layer, while Se:GaInP tended to conform to the underlying morphology, potentially increasing roughness in some areas. Utilizing 5 ..mu..m of C:GaAs as a planarizing buffer increased the average efficiency (without an antireflection coating) from an as-spalled baseline from 2.1% to 4.9% and performing a 5-min 30 degrees C 8:1:1 H2SO4:H2O2:H2O etch prior to a 5 ..mu..m of C:GaAs as a planarizing buffer further increased efficiency to 11.1%.

14 SOLAR ENERGY↗

GPU Direct I/O with HDF5

Exascale HPC systems are being designed with accelerators, such as GPUs, to accelerate parts of applications. In machine learning workloads as well as large-scale simulations that use GPUs as accelerators, the CPU (or host) memory is currently used as a buffer for data transfers between GPU (or device) memory and the file system. If the CPU does not need to operate on the data, then this is sub-optimal because it wastes host memory by reserving space for duplicated data. Furthermore, this “bounce buffer” approach wastes CPU cycles spent on transferring data. A new technique, NVIDIA GPUDirect Storage (GDS), can eliminate the need to use the host memory as a bounce buffer. Thereby, it becomes possible to transfer data directly between the device memory and the file system. This direct data path shortens latency by omitting the extra copy and enables higher-bandwidth. To take full advantage of GDS in existing applications, it is necessary to provide support with existing I/O libraries, such as HDF5 and MPI-IO, which are heavily used in applications. In this paper, we describe our effort of integrating GDS with HDF5, the top I/O library at NERSC and at DOE leadership computing facilities. We design and implement this integration using a HDF5 Virtual File Driver (VFD). The GDS VFD provides a file system abstraction to the application that allows HDF5 applications to perform I/O without the need to move data between CPUs and GPUs explicitly. We compare performance of the HDF5 GDS VFD with explicit data movement approaches and demonstrate superior performance with the GDS method.

Ravi, J↗