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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

The Nakhlites. I - Petrography and mineral chemistry. II - Where, when, and how

The two Nakhlite meteorites (Nakhla and Lafayette) are described, and their possible origin is discussed. It is shown that both objects are cumulates of clinopyroxene with augite as the major mineral and with lesser abundances of olivine, plagioclase, K-feldspar, Fe-Ti oxides, FeS, pyrite, chalcopyrite, and possibly iddingsite. Also, both meteorites are unbrecciated, and their texture is dominated by elongate subhedral to euhedral prisms of clinopyroxene. The data are shown to be compatible with the Nakhlites' being cumulative rocks from a common basaltic parent liquid. It is established that these objects are not of lunar origin, and it is concluded that the position of the parent body relative to other planetary bodies remains to be determined.

Bunch, T. E.↗
NASA NTRS1981

The mineralogy and the isotopic composition of sulfur in hydrothermal sulfide/sulfate deposits on the East Pacific Rise, 21 deg N latitude

The mineralogy and isotopic composition of sulfur found in hydrothermal deposits associated with five groups of vents along the ridge axis of the East Pacific Rise near 21 deg N latitude are investigated. Solid samples of mixed sulfides and sulfates from mounds, chimneys and the surrounding sediment as well as fresh basaltic glass were examined with a portable X-ray fluorescence spectrometer and by scanning electron microscopy, X-ray diffractometry, and electron microprobe analysis. For the three vents of exit temperature close to 350 C, the chimneys are found to be rich in copper sulfides, while for those of temperatures around 300 C, zinc sulfide is found to predominate. The major sulfides found in the chimneys include wurtzite, chalcopyrite, pyrite and cubanite, with anhydrite the dominant sulfate. Significant mineralogical differences are found between active and inactive vents. The isotopic composition of sulfur in anhydrites from active vents is observed to be close to that of sea water and consistent with a derivation from sea water sulfate. The isotopic composition of sulfur in the sulfide minerals is explained in terms of precipitation from solutions with reduced sulfur derived from basalts or basaltic magmas, and sea water sulfate. Finally, the deposits are interpreted as the results of the mixing of H2S-dominated hydrothermal fluids with cold sea water near the sea floor.

Styrt, M. M.↗
NASA NTRS1983

Growth and evaluation of AgGaS2 and AgGaSe2 for infrared nonlinear applications

The crystal growth technology for the two chalcopyrite compounds AgGaS2 and AgGaSe2 was studied. These two materials demonstrated their promise as important nonlinear crystals for infrared applications ten years ago. However, at the time, a number of various growth related problems such as cracking, twinning and the occurrence of optical scattering centers made it difficult to obtain high quality specimens in sizes exceeding 1 cm. Using seeding and precision-tapered fused quartz growth ampoules, a Bridgman/Stockbarger growth technology was developed to grow crack and twin-free boules in increasingly larger dimensions with an ultimate goal of 4 cm crystals harvested obliquely from c-axis boules. The post-growth heat treatment procedures were studied to understand the solid state chemical reactions and to avoid crystal damage which frequently occurs during these annealing procedures.

Byer, R. L.↗
NASA NTRS1984

Progress in optical parametric oscillators

It is pointed out that tunable coherent sources are very useful for many applications, including spectroscopy, chemistry, combustion diagnostics, and remote sensing. Compared with other tunable sources, optical parametric oscillators (OPO) offer the potential advantage of a wide wavelength operating range, which extends from 0.2 micron to 25 microns. The current status of OPO is examined, taking into account mainly advances made during the last decade. Attention is given to early LiNbO3 parametric oscillators, problems which have prevented wide use of parametric oscillators, the demonstration of OPO's using urea and AgGaS2, progress related to picosecond OPO's, a breakthrough in nanosecond parametric oscillators, the first demonstration of a waveguide and fiber parametric amplification and generation, the importance of chalcopyrite crystals, and theoretical work performed with the aim to understand the factors affecting the parametric oscillator performance.

Fan, Y. X.↗
NASA NTRS1984

AgGaS2 infrared parametric oscillator

A report is presented of the first operation of an optical parametric oscillator in a chalcopyrite crystal, AgGaS2. Tuning from 1.4 to 4.0 microns is demonstrated for 1.06-micron Nd:yttrium aluminum garnet pumping. The potential tuning range extends to the 12-micron transparency limit of the crystal.

Fan, Y. X.↗
NASA NTRS1988

Mineralogy and phase-chemistry of the Cretaceous/Tertiary section in the Lattengebirge, Bavarian Alps

The Lattengebirge K/T section reveals three distinct Ir spikes. Two of them are contained in the K/T transition zone sensu-strictu termed clayey interval, with 4.4 ppb Ir at the actual K/T boundary, and 2.8 ppb Ir 10 cm above the boundary. The highest Ir enrichment of 9 ppb, however, was detected in semi-cleaned organic material from a thin sandstone layer of Upper Maastrichtian age at 16 cm below the boundary. In this layer various discernible phases are preserved, contrasting with the worldwide observed K/T transition zones which are generally entirely composed of diagenetically altered materials. Given that, important clues to understanding the Cretaceous terminal events may be provided. The phases of the Cretaceous Ir bearing layer at Lattengebirge consist of: sandstone fragmental minerals in a carbonate matrix, coal which is partly burnt, melt glasses presumably of combustion-metamorphic origin, and sulfides, mainly chalcopyrite, contained in the coal. Like many known K/T sections and the Lattengebirge boundary sensu-strictu, the Cretaceous horizon is enriched in Ir and chalcophile elements as well. Although the Lattengebirge section offers the freshest materials, including melt glasses, of all K/T localities investigated, no unequivocal evidence of formation by impact has been found there.

Graup, G.↗
NASA NTRS1993

Production of Ultrafine, High-purity Ceramic Powders Using the US Bureau of Mines Developed Turbomill

Turbomilling, an innovative grinding technology developed by the U.S. Bureau of Mines in the early 1960's for delaminating filler-grade kaolinitic clays, has been expanded into the areas of particle size reduction, material mixing, and process reaction kinetics. The turbomill, originally called an attrition grinder, has been used for particle size reduction of many minerals, including natural and synthetic mica, pyrophyllite, talc, and marble. In recent years, an all-polymer version of the turbomill has been used to produce ultrafine, high-purity, advanced ceramic powders such as SiC, Si3N4, TiB2, and ZrO2. In addition to particle size reduction, the turbomill has been used to produce intimate mixtures of high surface area powders and whiskers. Raw materials, TiN, AlN, and Al2O3, used to produce a titanium nitride/aluminum oxynitride (TiN/AlON) composite, were mixed in the turbomill, resulting in strength increases over samples prepared by dry ball milling. Using the turbomill as a leach vessel, it was found that 90.4 pct of the copper was extracted from the chalcopyrite during a 4-hour leach test in ferric sulfate versus conventional processing which involves either roasting of the ore for Cu recovery or leaching of the ore for several days.

Hoyer, Jesse L.↗
NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗
NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates

The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.

Xing, G. C.↗
NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗
NASA NTRS1998

Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Hollingsworth, Jennifer A.↗
NASA NTRS2001

Vapor Growth of Binary and Ternary Chalcogenides in Preparation for Microgravity Experiments

In the bulk crystal growth of some technologically important semiconducting chalcopyrites, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials. The realization of routine production of high-quality single crystals of these semiconductors requires a fundamental, systematic and in-depth study on the PVT growth process and crystal growth by vapor transport in low gravity offers a set of unique conditions for this study. Previously, two reasons have been put forward to account for this. The first is weight-related reductions in crystal strain and defects. These are thought to be caused by the weight of the crystals during processing at elevated temperatures and retained on cooling, particularly for materials with a low yield strength. The second, and more general, reason is related to the reduction in density-gradient driven convection. The PVT crystal growth process consists of essentially three processes: sublimation of the source material, transport of the vapor species and condensation of the vapor species to form the crystal. The latter two processes can be affected by the convection caused by gravitational accelerations on Earth. Reductions in such convection in low gravity is expected to yield a nearly diffusion-limited growth condition which results in more uniform growth rates (on the microscopic scale) and hence greater crystalline perfection and compositional homogeneity. The reduction of convective contamination by performing flight experiments in a reduced gravity environment will help to understand the relation between fluid phase processes (growth parameters) and defect and impurity incorporation in grown crystals.

Su, C.↗
NASA NTRS2001

Vapor Growth of Binary and Ternary Chalcogenides in Preparation for Microgravity Experiments

In the bulk crystal growth of some technologically important semiconducting chalcopyrites, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials. The realization of routine production of high-quality single crystals of these semiconductors requires a fundamental, systematic and in-depth study on the PVT growth process and crystal growth by vapor transport in low gravity offers a set of unique conditions for this study. Previously, two reasons have been put forward to account for this. The first is weight-related reductions in crystal strain and defects. These are thought to be caused by the weight of the crystals during processing at elevated temperatures and retained on cooling, particularly for materials with a low yield strength. The second, and more general, reason is related to the reduction in density-gradient driven convection. The PVT crystal growth process consists of essentially three processes: sublimation of the source material, transport of the vapor species and condensation of the vapor species to form the crystal. The latter two processes can be affected by the convection caused by gravitational accelerations on Earth. Reductions in such convection in low gravity is expected to yield a nearly diffusion-limited growth condition which results in more uniform growth rates (on the microscopic scale) and hence greater crystalline perfection and compositional homogeneity. The reduction of convective contamination by performing flight experiments in a reduced gravity environment will help to understand the relation between fluid phase processes (growth parameters) and defect and impurity incorporation in grown crystals.

Su, Ching-Hua↗
NASA NTRS2002

Thin Film CuInS2 Prepared by Spray Pyrolysis with Single-Source Precursors

Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.

Jin, Michael H.↗
NASA NTRS2005

Physics of Quantum Structures in Photovoltaic Devices

There has been considerable activity recently regarding the possibilities of using various nanostructures and nanomaterials to improve photovoltaic conversion of solar energy. Recent theoretical results indicate that dramatic improvements in device efficiency may be attainable through the use of three-dimensional arrays of zero-dimensional conductors (i.e., quantum dots) in an ordinary p-i-n solar cell structure. Quantum dots and other nanostructured materials may also prove to have some benefits in terms of temperature coefficients and radiation degradation associated with space solar cells. Two-dimensional semiconductor superlattices have already demonstrated some advantages in this regard. It has also recently been demonstrated that semiconducting quantum dots can also be used to improve conversion efficiencies in polymeric thin film solar cells. Improvement in thin film cells utilizing conjugated polymers has also be achieved through the use of one-dimensional quantum structures such as carbon nanotubes. It is believed that carbon nanotubes may contribute to both the disassociation as well as the carrier transport in the conjugated polymers used in certain thin film photovoltaic cells. In this paper we will review the underlying physics governing some of the new photovoltaic nanostructures being pursued, as well as the the current methods being employed to produce III-V, II-VI, and even chalcopyrite-based nanomaterials and nanostructures for solar cells.

Raffaelle, Ryne P.↗
NASA NTRS2007

Improved Single-Source Precursors for Solar-Cell Absorbers

Improved single-source precursor compounds have been invented for use in spray chemical vapor deposition (spray CVD) of chalcopyrite semiconductor absorber layers of thin-film cells. A "single-source precursor compound" is a single molecular compound that contains all the required elements, which when used under the spray CVD conditions, thermally decomposes to form CuIn(x)Ga(1-x)S(y)Se(2-y).

Banger, Kulbinder K.↗
NASA NTRS2007

Making Single-Source Precursors of Ternary Semiconductors

A synthesis route has been developed for the commercial manufacture of single- source precursors of chalcopyrite semiconductor absorber layers of thin-film solar photovoltaic cells. A closely related class of single-source precursors of these semiconductors, and their synthesis routes, were reported in "Improved Single-Source Precursors for Solar-Cell Absorbers" (LEW-17445-1), NASA Tech Briefs, Vol. 31, No. 6 (June 2007), page 56. The present synthesis route is better suited to commercialization because it is simpler and involves the use of commercially available agents, yet offers the flexibility needed for synthesis of a variety of precursors. A single-source precursor of the type of interest here is denoted by the general formula L2M'(mu-ER)2M(ER)2, where L signifies a Lewis base; M signifies Al, In, or Ga; M' signifies Ag or Cu; R signifies an alkyl, aryl, silyl, or perfluorocarbon group; E signifies O, S, Se, or Te; and mu signifies a bridging ligand. This compound can be synthesized in a "one-pot" procedure from ingredients that are readily available from almost any chemical supplier. In a demonstration, the following synthesis was performed: Under anaerobic conditions, InCl3 was reacted with sodium ethanethiolate in methanol in a 1:4 molar ratio to afford the ionic stable intermediate compound Na+[In(SEt)4]- (where Et signifies ethyl group). After approximately 15 minutes, a heterogeneous solution of CuCl and the Lewis base PPh3 (where Ph signifies phenyl) in a 1:2 ratio in a mixture of CH3CN and CH2Cl2 was added directly to the freshly prepared Na+[In(SEt)4]-. After 24 hours, the reaction was essentially complete. The methanolic solution was concentrated, then the product was extracted with CH2Cl2, then the product was washed with dry ether and pentane. The product in its final form was a creamy white solid. Spectroscopic and elemental analysis confirmed that the product was (PPh3)2Cu(mu-SEt)2In(mu-SEt)2, which is known to be a precursor of the ternary semiconductor CuInS2.

Hepp, Aloysius↗