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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Thermal Conductivity Measurement of Extrusion-Printed Silver Using Modulated Photothermal Radiometry

Flexible printed electronics is a rapidly growing field with applications in conformal and flexible devices. However, the physical properties of the films created by many state-of-the-art printing methods become highly dependent on printing parameters, resulting in varying thermal properties often differing significantly from their bulk ink components. To understand the influence of the printing process, we build upon our previous work, where a noncontact optical technique, known as modulated photothermal radiometry (MPTR), was used to measure the thermal conductivity of aerosol-jet-printed thin films. In this work, we use the method to study the thermal properties of extrusion-printed silver on glass and alumina substrates. A noise-resistant data analysis fitting technique is applied using a 2-D heat transfer model. Here, the thermal conductivity measurement is validated using the Weidemann-Franz (WF) relationship from measured electrical conductivity values.

42 ENGINEERING↗
DOE OSTI2024

From Design to Device: Challenges and Opportunities in Computational Discovery of p -Type Transparent Conductors

A high-performance p -type transparent conductor (TC) does not yet exist but could lead to advances in a wide range of optoelectronic applications and enable new architectures for, e.g., next-generation photovoltaic (PV) devices. High-throughput computational material screenings have been a promising approach to filter databases and identify new p -type TC candidates and some of these predictions have been experimentally validated. However, most of these predicted candidates do not have experimentally achieved properties on par with n -type TCs used in solar cells and therefore have not yet been used in commercial devices. Thus, there is still a significant divide between transforming predictions into results that are actually achievable in the laboratory and an even greater lag in scaling predicted materials into functional devices. In this perspective, we outline some of the major disconnects in this materials discovery process—from scaling computational predictions into synthesizable crystals and thin films in the laboratory to scaling laboratory-grown films into real-world solar devices—and share insights to inform future strategies for TC discovery and design. Published by the American Physical Society 2024

14 SOLAR ENERGY↗
DOE OSTI2023

Dislocation-Assisted Quasi-Two-Dimensional Semiconducting Nanochannels Embedded in Perovskite Thin Films

Defect engineering in perovskite thin films has attracted extensive attention recently due to the films’ atomic-scale modification, allowing for remarkable flexibility to design novel nanostructures for next generation nanodevices. However, the defect-assisted three-dimensional nanostructures in thin film matrices usually has large misfit strain and thus causes unstable thin film structures. In contrast, defect-assisted one- or two-dimensional nanostructures embedded in thin films can sustain large misfit strains without relaxation, which make them suitable for defect engineering in perovskite thin films. Here, we reported the fabrication and characterization of edge-type misfit dislocation-assisted two-dimensional BiMnO x nanochannels embedded in SrTiO 3 /La 0.7 Sr 0.3 MnO 3 /TbScO 3 perovskite thin films. The nanochannels are epitaxially grown from the surrounding films without noticeable misfit strain. Diode-like current rectification was spatially observed at nanochannels due to the formation of Schottky junctions between BiMnO x nanochannels and conducting La 0.7 Sr 0.3 MnO 3 thin films. Such atomically scaled heterostructures constitute more flexible ultimate functional units for nanoscale electronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Chemically Stable Polyarylether-Based Metallophthalocyanine Frameworks with High Carrier Mobilities for Capacitive Energy Storage

Covalent organic frameworks (COFs) with efficient charge transport and exceptional chemical stability are emerging as an import class of semiconducting materials for opto-/electronic devices and energy-related applications. However, the limited synthetic chemistry to access such materials and the lack of mechanistic understanding of carrier mobility greatly hinder their practical applications. Herein, we report the synthesis of three chemically stable polyarylether-based metallophthalocyanine COFs (PAE-PcM, M = Cu, Ni, and Co) and facile in situ growth of their thin films on various substrates (i.e., SiO 2 /Si, ITO, quartz) under solvothermal conditions. We show that PAE-PcM COFs thin films with van der Waals layered structures exhibit p -type semiconducting properties with the intrinsic mobility up to ~19.4 cm 2 V -1 s -1 and 4 orders of magnitude of increase in conductivity for PAE-PcCu film (0.2 S m -1 ) after iodine doping. Density functional theory calculations reveal that the carrier transport in the framework is anisotropic, with the out-of-plane hole transport along columnar stacked phthalocyanine more favorable. Furthermore, PAE-PcCo shows the redox behavior maximumly contributes ~88.5% of its capacitance performance, giving rise to a high surface area normalized capacitance of ~19 μF cm -2 . Overall, this work not only offers fundamental understandings of electronic properties of polyarylether-based 2D COFs but also paves the way for their energy-related applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Achieving High Thermoelectric Performance and Metallic Transport in Solvent-Sheared PEDOT:PSS

Polymer-based materials hold great potential for use in thermoelectric applications but are limited by their poor electrical properties. Through a combination of solution-shearing deposition and directionally applied solvent treatments, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films with metallic-like conductivities can be obtained with high power factors in excess of 800 µW m -1 K -2 . X-ray scattering and absorption data indicate that structural alignment of PEDOT chains and larger-sized domains are responsible for the enhanced electrical conductivity. Overall, it is expected that further enhancements to the power factor can be obtained through device geometry and postdeposition solvent shearing optimization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Enhancing the metal–insulator transition in VO 2 heterostructures with graphene interlayers

In this work, studies were conducted on epitaxial VO 2 thin films to assess to the effect of remote epitaxy on the metal–insulator transition (MIT). The epitaxial VO 2 heterostructures were synthesized on both bare Al 2 O 3 (0001) substrates and Al 2 O 3 substrates coated with two monolayer-thick graphene. While both systems exhibit the MIT, the film grown by remote epitaxy on graphene demonstrates improved transport properties. Electrical transport measurements show that the on/off ratio is enhanced by a factor of ~7.5 and the switching temperature window is narrower for VO 2 thin films grown on graphene. By characterizing the heterostructures with a suite of structural, chemical, and spectroscopic tools, we find that the graphene interlayer inhibits oxygen vacancy diffusion from Al 2 O 3 (0001) during the VO 2 growth, resulting in improved electrical behavior at the MIT.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Low temperature atomic layer deposition of PbO 2 for electrochemical applications

A low temperature atomic layer deposition (ALD) process for PbO 2 was developed using bis(1-dimethylamino-2-methyl-2-propanolate)lead(II), Pb(DMAMP) 2 , and O 3 as the reactants, with a high growth rate of 2.6 Å/cycle. PbO 2 readily reduces under low oxygen partial pressures at moderate temperatures making it challenging to deposit ALD PbO 2 from Pb 2+ precursors. However, thin films deposited with this process showed small crystalline grains of α-PbO 2 and β-PbO 2 , without signs of reduced PbO x phases. The ALD PbO 2 thin films show the high electrical conductivity characteristic of bulk PbO 2 . In situ measurements of ALD PbO 2 film conductivity during growth suggest a reaction mechanism by which sub-surface oxygen mobility contributes to the growth of resistive PbO or PbO x during the Pb(DMAMP) 2 surface reaction step, which is only fully oxidized from Pb 2+ to Pb 4+ during the O 3 reaction step. These films were electrochemically reduced to PbSO 4 in H 2 SO 4 and then reoxidized to PbO 2 , demonstrating their suitability for use as an electrode material for fundamental battery research and other electrochemical applications.

atomic layer deposition↗
DOE OSTI2024

Absence of hydrogen insertion into highly crystalline superconducting infinite layer nickelates

Here, the discovery of superconductivity in the infinite layer nickelates introduced a materials system analogous to the cuprates for the study of unconventional superconductivity. The synthesis of infinite layer nickelates, (RNiO 2 , R = lanthanide) often uses calcium hydride (CaH 2 ) to facilitate the deintercalation of apical site oxygen atoms from a precursor perovskite (RNiO 3 ) phase via topotactic reduction. However, it remains uncertain whether the use of CaH 2 results in the insertion of hydrogen into the infinite layer structure, and if it does, what the implications are for superconductivity. To quantify the hydrogen composition of highly crystalline infinite layer nickelates, we synthesized Nd 1-x⁢ Sr x ⁢NiO 2 thin films on LSAT substrates and conducted time-of-flight secondary ion mass spectroscopy measurements to generate hydrogen depth profiles. We compare the hydrogen density of nickelates prepared with and without a SrTiO 3 capping layer. Additionally, we measure the hydrogen content in nickelate samples at various doping levels spanning the superconducting phase space, including the underdoped, optimally doped, and overdoped regime. We report no significant increase in hydrogen density between the perovskite and infinite layer phases in any of the measured samples. Furthermore, we put an upperbound on the hydrogen concentration of our nickelate samples to Nd 1-x Sr x ⁢NiO 2 ⁢H 0.05 . Our results imply that hydrogen is not responsible for the emergence of superconductivity in the infinite layer nickelates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Theoretical investigations on Kerr and Faraday rotations in topological multi-Weyl Semimetals

Motivated by the recent proposal of giant Kerr rotation in WSMs, we investigate the Kerr and Faraday rotations in time-reversal broken multi-Weyl semimetals (mWSMs) in the absence of an external magnetic field. Using the framework of Kubo response theory, we find that both the longitudinal and transverse components of the optical conductivity in mWSMs are modified by the topological charge ( n n ). Engendered by the optical Hall conductivity, we show in the thin film limit that, while the giant Kerr rotation and corresponding ellipticity are independent of n n , the Faraday rotation and its ellipticity angle scale as n n and n^2 n 2 , respectively. In contrast, the polarization rotation in semi-infinite mWSMs is dominated by the axion field showing n n dependence. In particular, the magnitude of Kerr (Faraday) angle decreases (increases) with increasing n n in Faraday geometry, whereas in Voigt geometry, it depicts different n n -dependencies in different frequency regimes. The obtained results on the behavior of polarization rotations in mWSMs could be used in experiments as a probe to distinguish single, double, and triple WSMs, as well as discriminate the surfaces of mWSMs with and without hosting Fermi arcs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Mechanisms of Water-Stimulated Mg 2+ Intercalation in Vanadium Oxide: Toward the Development of Hydrated Vanadium Oxide Cathodes for Mg Batteries

As lithium-ion batteries approach their theoretical limits for energy density, magnesium-ion batteries are emerging as a promising next-generation energy storage technology. However, progress in magnesium-ion battery research has been stymied by a lack of available high capacity cathode materials that can reversibly insert magnesium ions. Vanadium Oxide (V 2 O 5 ) has emerged as one of the more promising candidate cathode materials, owing to its high theoretical capacity, facile synthesis methods, and relatively high operating voltage. This review focuses on the outlook of hydrated V 2 O 5 structures as a high capacity cathode material for magnesium-ion batteries. In general, V 2 O 5 structures exhibit poor experimental capacity for magnesium-ion insertion due to sluggish magnesium-ion insertion kinetics and poor electronic conductivity. However, several decades ago, it was discovered that the addition of water to organic electrolytes significantly improves magnesium-ion insertion into V 2 O 5 . This review clarifies the various mechanisms that have been used to explain this observation, from charge shielding to proton insertion, and offers an alternative explanation that examines the possible role of structural hydroxyl groups on the V 2 O 5 surface. While the mechanism still needs to be further studied, this discovery fueled new research into V 2 O 5 electrodes that incorporate water directly as a structural element. The most promising of these hydrated V 2 O 5 materials, many of which incorporate conductive additives, nanostructured architectures, and thin film morphologies, are discussed. Ultimately, however, these hydrated V 2 O 5 structures still face a significant barrier to potential applications in magnesium-ion batteries. During full cell electrochemical cycling, these hydrated structures tend to leach water into the electrolyte and passivate the surface of the magnesium anode, leading to poor cycle life and low capacity retention. Recently, some promising strides have been made to remedy this problem, including the use of artificial solid electrolyte interphase layers as an anode protection scheme, but a call to action for more anode protection strategies that are compatible with trace water and magnesium metal is required.

25 ENERGY STORAGE↗
NASA NTRS1981

Balloon material characterization

Experimental data are reviewed to study the state of stress and strain in a typical balloon fabricated from thin polyethylene film. Relaxation tests are conducted over a temperature range of -60 C to 140 C for a constant strain of 1%, and loads measured with the load cell are converted to values of the relaxation modulus. A log-log plot is made of the modulus as a function of time, and the maximum stress is found to occur at times of the order of one-half second. The film behaves as a nonlinear viscoelastic material, and by examining various theoretical relationships of stress and strain with temperature and time histories, a material testing program is developed which yields the necessary data to characterize the film.

Wilbeck, J. S.↗
DOE OSTI2022

High thermal conductivity in wafer-scale cubic silicon carbide crystals

High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m –1 K –1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.

42 ENGINEERING↗
DOE OSTI2023

Synthesis, Hole Doping, and Electrical Properties of a Semiconducting Azatriangulene-Based Covalent Organic Framework

Two-dimensional covalent organic frameworks (2D COFs) containing heterotriangulenes have been theoretically identified as semiconductors with tunable, Dirac-cone-like band structures, which are expected to afford high charge-carrier mobilities ideal for next-generation flexible electronics. However, few bulk syntheses of these materials have been reported, and existing synthetic methods provide limited control of network purity and morphology. Here, we report transimination reactions between benzophenone-imine-protected azatriangulenes (OTPA) and benzodithiophene dialdehydes (BDT), which afforded a new semiconducting COF network, OTPA-BDT. The COFs were prepared as both polycrystalline powders and thin films with controlled crystallite orientation. Here, the azatriangulene nodes are readily oxidized to stable radical cations upon exposure to an appropriate p type dopant, tris(4-bromophenyl)ammoniumyl hexachloroantimonate, after which the network’s crystallinity and orientation are maintained. Oriented, hole-doped OTPA-BDT COF films exhibit electrical conductivities of up to 1.2 × 10 –1 S cm –1 , which are among the highest reported for imine-linked 2D COFs to date.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Signatures of superconducting triplet pairing in Ni–Ga-bilayer junctions

Ni–Ga bilayers are a versatile platform for exploring the competition between strongly antagonistic ferromagnetic and superconducting phases. We characterize the impact of this competition on the transport properties of highly-ballistic Al/Al 2 O 3 (/EuS)/Ni–Ga tunnel junctions from both experimental and theoretical points of view. While the conductance spectra of junctions comprising Ni (3 nm)–Ga (60 nm) bilayers can be well understood within the framework of earlier results, which associate the emerging main conductance maxima with the junction films’ superconducting gaps, thinner Ni (1.6 nm)–Ga (30 nm) bilayers entail completely different physics, and give rise to novel large-bias (when compared to the superconducting gap of the thin Al film as a reference) conductance-peak subseries that we term conductance shoulders. These conductance shoulders might attract considerable attention also in similar magnetic superconducting bilayer junctions, as we predict them to offer an experimentally well-accessible transport signature of superconducting triplet pairings that are induced around the interface of the Ni–Ga bilayer. We further substantiate this claim performing complementary polarized neutron reflectometry measurements on the bilayers, from which we deduce (1) a nonuniform magnetization structure in Ga in a several nanometer-thick area around the Ni–Ga boundary and can simultaneously (2) satisfactorily fit the obtained data only considering the paramagnetic Meissner response scenario. While the latter provides independent experimental evidence of induced triplet superconductivity inside the Ni–Ga bilayer, the former might serve as the first experimental hint of its potential microscopic physical origin. Finally, we introduce a simple phenomenological toy model to confirm also from the theoretical standpoint that superconducting triplet pairings around the Ni–Ga interface can indeed lead to the experimentally observed conductance shoulders, which convinces that our claims are robust and physically justified. Arranging our work in a broader context, we expect that Ni–Ga-bilayer junctions could have a strong potential for future superconducting-spintronics applications whenever an efficient engineering of triplet-pairing superconductivity is required.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Direct Spectroscopic Observation of the Hole Polaron in Lead Halide Perovskites

Intrinsic photophysical origin of lead halide perovskites (LHPs) succeeding in optolectronic applications still remains hotly debated. In this study, by using the ultrafast X-ray transient absorption spectroscopy, we successfully tracked the fate of photogenerated charge carriers at room temperature within the thin films of two classic LHPs, namely MAPbBr 3 (MA: CH 3 NH 3 ) and FAPbBr 3 (FA: CH(NH 2 ) 2 ). We clearly observed in both thin films that the hole polaron is formed by localizing the photogenerated hole at Br 4p orbital and concurrently distorting the local structure surrounding Br atom after the photoexcitation. Furthermore, the bigger cation FA in the cavity of [PbBr 6 ] 4- octahedral framework induces larger hole polaron effect due to its p orbital hybridization into valence and conduction bands, correlating with the slower charge carrier recombination dynamics. Our direct experimental observation of the localized hole polaron in perovskites should advance the fundamental comprehension of charge carrier behavior within LHPs and their related devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

In-situ TEM EELS analysis of memristive thin films for neuromorphic computing

Neuromorphic computing stands as a promising frontier for advancing AI algorithms and applications like ChatGBT, offering significant energy efficiency gains. This paper delves into the hardware design intricacies of memristive thin films and their elementary switching mechanisms, including anion migration, electron migration, and phase transitions. Through comprehensive analysis of electron energy loss spectroscopy (EELS) data via in-situ transmission electron microscopy (TEM), we will deduce the primary memristive switching mechanisms vital for optimizing thin film fabrication parameters and achieving desired film thickness, conductivity, and memory retention. A single crystal ptype Si substrate was used with TiN as the bottom metal electrode, TiO x as the insulating dielectric layer, and Pt as the top metal electrode. In-situ TEM was able to tell us the thin film didn’t behave like a filamentary or phase transition material. EELS data deduced that electron trapping/detrapping was one of the primary switching mechanisms. By shedding light on these elementary mechanisms, our study aims to catalyze the development of more 2 efficient and effective neuromorphic computing systems to be deployed into mainstream technologies.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1985

Battery plate containing filler with conductive coating

The plate (10) comprises a matrix or binder resin phase (12) in which is dispersed particulate, conductive tin oxide such as tin oxide coated glass fibers (14). A monopolar plate (11) is prepared by coating a layer (18) of electrolytically active material onto a surface of the plate (10). Tin oxide is prevented from reduction by coating a surface of the plate (10) with a conductive, impervious layer resistant to reduction such as a thin film (22) of lead adhered to the plate with a layer (21) of conductive adhesive. The plate (10) can be formed by casting a molten dispersion from mixer (36) onto a sheet (30) of lead foil or by passing an assembly of a sheet (41) of resin, a sheet (43) of fiberglass and a sheet (45) of lead between the nip of heated rollers (48, 50).

Rowlette, John J.↗