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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2026

Chirality-induced spin selectivity as a mechanism to control product selectivity during electrochemical CO 2 reduction

Electrocatalytic CO 2 reduction often suffers from competition with the hydrogen evolution reaction (HER), which lowers efficiency and limits product selectivity. Recent studies suggest that electron spin, when controlled at an electrode surface, can influence reaction pathways, but direct evidence linking spin effects to suppressed HER has been limited. Here, in this work, we show that helical chiral copper (Cu) electrodes reduce competing HER during CO 2 reduction, consistent with spin polarization induced via the chiral-induced spin selectivity effect. The helically structured Cu electrodes are fabricated by electrodeposition with a chiral templating reagent. Time-resolved Kerr ellipticity measurements, which track spin-polarized carriers generated by an ultrafast Seebeck current, confirm spin accumulation at the chiral Cu surface. This spin polarization disfavours H—H bond formation, thereby suppressing HER and enabling formate production alongside CO. These findings demonstrate that chirality-based spin control offers a strategy for steering selectivity in CO 2 reduction and other reactions where HER is an undesired competitor.

14 SOLAR ENERGY↗
DOE OSTI2025

Analysis of Transformer Magnetizing Reactance Using Describing Function in Direct Power Control of Back-to-Back Modular Multilevel Converter with Advanced Grid Support

This paper presents a Port Controlled Hamiltonian based direct power control architecture for a back-to-back modular multilevel converter system connecting two ac sources at different frequencies. The system features advanced grid support functionalities based on IEEE 1547-2018, implemented on the inverter side. The rectifier side controller ensures reference following for active and/or reactive powers and maintains the commanded dc bus voltage. The inverter side controller ensures power command following for active and reactive powers.The proposed control architecture is designed to suppress second harmonic oscillations in powers during unbalanced grid voltage sags by dynamically adjusting the currents on each ac side. This also ensures effective elimination of any second harmonic oscillations in the equivalent dc bus voltage. Validation is performed on an OPAL-RT real-time platform with case studies on unbalanced and balanced sags, demonstrating the controller's effectiveness during real time implementation. A reduced-scale laboratory prototype further verifies these case studies, with experimental results for balanced sags due to grid simulator limitations. The results confirm the robustness and efficiency of the proposed control strategy in ensuring stable and reliable operation under various grid conditions.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Limited impact of jet-induced feedback in the multi-phase nuclear interstellar medium of 4C12.50

4C12.50 (IRAS 13451+1232) at z = 0.122 is an ultraluminous infared radio galaxy that has often been proposed as a prime candidate for the link between ultraluminous infared galaxies and young radio galaxies. It is also an interesting target to investigate whether and how radio-induced feedback affects the evolution of galaxies in the early phases of radio activity. We study, in detail for the first time, the hot (≥1500 K) molecular gas in 4C12.50. The potential impact of the radio jet on this gas phase, as well as on the star formation activity, are investigated. We also study the ionised (including coronal) gas as traced by the near-infrared lines. Using near-infrared long slit spectroscopy obtained with EMIR on GTC and X-shooter on VLT, we analyse the emission line spectrum of the ionised, coronal, and, specially, the hot molecular gas in the western nucleus hosting the compact radio jet. Based on high spatial resolution ALMA CO(2–1) data, we also revise the location of 4C12.50 in the Kennicutt-Schmidt diagram in order to investigate whether star formation is suppressed. 4C12.50 hosts (2.1 ± 0.4) × 10 4 M ⊙ of hot molecular gas. An unusually high rotational temperature T rot = 3020 ± 160 K is inferred. The molecular gas mass obeys a power-law temperature distribution, dM H2 /dT ∝ T –5 , from T ~300 K and up to ~3000 K. Both results support the idea that shocks (probably induced by the radio jet) contribute to the heating and excitation of the hot molecular gas. A molecular outflow is not detected. The coupling of the outflowing ionised and neutral outflows with the hot molecular gas is poor. Contrary to other studies, we claim that there is no evidence for star formation suppression in this object. If radio-induced feedback can regulate the star formation activity in galaxies, 4C12.50 is a promising candidate to reveal this phenomenon in action. However, we find no solid evidence for a current or past impact of this mechanism on the evolution of this system, neither by clearing out the dusty central cocoon efficiently, nor by suppressing the star formation activity.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

Time-Efficient Qudit Gates through Incremental Pulse Re-seeding

Current efforts to build quantum computers focus mainly on the two-state qubit, which often involves suppressing readily-available higher states. In this work, we break this abstraction and synthesize short-duration control pulses for gates on generalized d-state qudits. We present Incremental Pulse Reseeding, a practical scheme to guide optimal control software to the lowest-duration pulse by iteratively seeding the optimizer with previous results. We find a near-linear relationship between Hilbert space dimension and gate duration through explicit pulse optimization for one- and two-qudit gates on transmons. Furthermore, our results suggest that qudit operations are much more efficient than previously expected in the practical regime of interest and have the potential to significantly increase the computational power of current hardware.

pulse synthesis↗
DOE OSTI2020

From suppressed void growth to significant void swelling in NiCoFeCr complex concentrated solid-solution alloy

Void swelling can result in dimensional instability and undermine the safe operation of nuclear reactors. Current strategies to inhibit void swelling mainly focus on enhancing defect absorption and recombination by introducing high-density defect sinks. Complex concentrated solid-solution alloys (CSAs), including high-entropy alloys, can withstand severe radiation damage due to their inherent chemical complexity without interfaces. However, the underlying mechanisms for void suppression in CSAs are far from clear. In this research, we studied the void evolution with respect to irradiation depths, doses, and temperatures in equiatomic NiCoFeCr under 3 MeV Ni ion irradiations. At relatively low doses (16 and 54 displacements per atom, dpa), voids form mainly outside of the ion-damaged region, and void formation in the peak damage region is suppressed, leading to negligible swelling. However, with further increase of dose (86 up to 250 dpa), significant void growth occurs in the peak damage region and extended dislocation lines dominate instead of short dislocation lines and loops formed at lower doses. From 500 to 700 °C, the dislocation density decreases while dislocations grow. Although the overall void swelling increases dramatically from 500 to 580 °C at 54 dpa, void growth in the peak damage region is still suppressed. The transition from suppressed void growth to significant void swelling is attributed to dislocation evolution and local chemical inhomogeneity (enrichment of Fe/Cr in the matrix) at higher doses. Our study shows that controlling element diffusion and defect evolution through tuning chemical complexity can further enhance the swelling resistance of CSAs.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Modeling of transverse stimulated Raman scattering in KDP/DKDP in large-aperture plates suitable for polarization control

Transverse stimulated Raman scattering (TSRS) in potassium dihydrogen phosphate (KDP) and deuterated potassium dihydrogen phosphate (DKDP) plates for large-aperture, inertial confinement fusion (ICF)-class laser systems is a well-recognized limitation giving rise to parasitic energy conversion and laser-induced damage. The onset of TSRS is manifested in plates exposed to the ultraviolet section of the beam. TSRS amplification is a coherent process that grows exponentially and is distributed nonuniformly in the crystal and at the crystal surfaces. To understand the growth and spatial distribution of TSRS energy in various configurations, a modeling approach has been developed to simulate the operational conditions relevant to ICF-class laser systems. Specific aspects explored in this work include (i) the behavior of TSRS in large-aperture crystal plates suitable for third-harmonic generation and use as wave plates for polarization control in current-generation ICF-class laser system configurations; (ii) methods, and their limitations, of TSRS suppression and (iii) optimal geometries to guide future designs.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Probing the Effects of the First Atomic Layer on the Dynamic Behavior of Sub-2 nm MgO/Al 2 O 3 Memristors

As electronic devices continue to scale down from the current sub-5 nm range, atomic-scale control of defects becomes increasingly crucial to suppressing their impact on the physical properties of the devices. Memristors present an excellent example as a nonlinear and dynamic device with high speed and endurance required for electronic applications ranging from neuromorphic computing to nonvolatile memories. Herein we investigate the impact of atomic defects in sub-2 nm thick MgO/Al 2 O 3 atomic layer stack (ALS) memristors that use an M1 (switching layer)/M2 (oxygen vacancy reservoir layer) bilayer structure grown using in vacuo atomic layer deposition (iALD). Intriguingly, we revealed a direct correlation of the atomic defects in the M2 layer with the memristor dynamic behavior using a combined analysis of in situ scanning tunneling spectroscopy (iSTS) on the M2 layer and ex situ characterization on the memristors. Specifically, incomplete coverage of the 1st ALD atomic layer of M2 on the electrode yields defects at the M2/electrode interface. Despite the monotonic increase of ALD coverage, by almost three-fold from ~30% to >90%, at completion of the M2 layer of ~ 0.7 nm in thickness, the impact of the defects on the M2/electrode interface has been found detrimental to both memristor switching speed and endurance. Guided by atomistic simulation, we addressed the issue of interface defects via tuning of the Al surface hydroxylation to increase the first atomic layer ALD coverage to ~75%, leading to improved memristor switching speed and endurance by several orders of magnitude. In conclusion, these findings shed light on the correlation between the atomic defects and the dynamic behavior of sub-2 nm memristors and the importance of minimizing the atomic defects in memristors for future electronic applications.

Atomic Layer Deposition↗
DOE OSTI2021

Modification of favorable average curvature effect by changing parallel sound wave behavior in tokamak plasmas

Abstract The favorable average curvature effect, also known as the GGJ effect (Glasser et al 1975 Phys. Fluids 18 875), is intrinsically associated with parallel sound wave propagation in a tokamak plasma. This work investigates how the GGJ effect is modified by changing the parallel sound wave behavior. Two physics models beyond the standard single fluid theory, i.e. an anisotropic thermal transport model and a parallel sound wave damping model, are employed to change parallel sound waves in a toroidal plasma, and the consequence on the GGJ effect is demonstrated for two important classes of problems, i.e. the resistive plasma response to the applied resonant magnetic perturbation and the stability of the tearing mode. Toroidal modeling reveals that the GGJ effect is significantly altered by both of the aforementioned physics effects. Compared to the thermal transport physics, which completely removes the GGJ effect, the sound wave damping effect only offers partial mitigation. The differences between these two models are further illustrated in terms of the radial structure of the shielding current and the eigenfunction of the tearing instability. In particular, a fundamental reason for complete suppression of the GGJ effect by the thermal transport is identified as an extra toroidal coupling of the poloidal harmonics.

Physics↗
DOE OSTI2023

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Abstract Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10 −4 –10 −3 . This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO 2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Current status of the electron transport line from RCS to ESR: RTE line

The electron injection system of the U.S. Electron-Ion Collider (EIC) is located outside of the RHIC tunnel. Electrons beams accelerated by the Rapid Cycling Synchrotron (RCS) must be transported to the Electron Storage Ring (ESR), which resides within the RHIC tunnel. To accomplish this, a dedicated beam transport line, referred to as RTE (RCS-to-ESR) line is being designed. The proposed conceptual design comprises three main sections; RCS extraction, a vertical bend and dispersion suppression region, and ESR injection matching. The extraction section uses pulsed kickers and septum magnets to achieve a total deflection angle of 3 degrees. To align the injection section with ESR, the beamline must provide a vertical elevation of 1.68 m, and an array of FODO cells is used to suppress the vertical dispersion. The total length of the RTE line is approximately 133 m, and this paper presents the current design status and considerations for this transport line.

Accelerator Physics↗
DOE OSTI2023

Near-infrared absorbing acceptor with suppressed triplet exciton generation enabling high performance tandem organic solar cells

Reducing the energy loss of sub-cells is critical for high performance tandem organic solar cells, while it is limited by the severe non-radiative voltage loss via the formation of non-emissive triplet excitons. Herein, we develop an ultra-narrow bandgap acceptor BTPSeV-4F through replacement of terminal thiophene by selenophene in the central fused ring of BTPSV-4F, for constructing efficient tandem organic solar cells. The selenophene substitution further decrease the optical bandgap of BTPSV-4F to 1.17 eV and suppress the formation of triplet exciton in the BTPSV-4F-based devices. The organic solar cells with BTPSeV-4F as acceptor demonstrate a higher power conversion efficiency of 14.2% with a record high short-circuit current density of 30.1 mA cm –2 and low energy loss of 0.55 eV benefitted from the low non-radiative energy loss due to the suppression of triplet exciton formation. We also develop a high-performance medium bandgap acceptor O1-Br for front cells. By integrating the PM6:O1-Br based front cells with the PTB7-Th:BTPSeV-4F based rear cells, the tandem organic solar cell demonstrates a power conversion efficiency of 19%. The results indicate that the suppression of triplet excitons formation in the near-infrared-absorbing acceptor by molecular design is an effective way to improve the photovoltaic performance of the tandem organic solar cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Theoretical Analysis of Critical Conditions for Crack Formation and Propagation, and Optimal Operation of SOECs

A theoretical analysis on crack formation and propagation was performed based on the coupling between the electrochemical process, classical elasticity, and fracture mechanics. The chemical potential of oxygen, thus oxygen partial pressure, at the oxygen electrode-electrolyte interface ( μ O 2 OE∣El ) was investigated as a function of transport properties, electrolyte thickness and operating conditions (e.g., steam concentration, constant current, and constant voltage). Our analysis shows that: a lower ionic area specific resistance (ASR), r i O E , and a higher electronic ASR ( r e O E ) of the oxygen electrode/electrolyte interface are in favor of suppressing crack formation. The μ O 2 O E ∣ E l , thus local pO 2 , are sensitive towards the operating parameters under galvanostatic or potentiostatic electrolysis. Constant current density electrolysis provides better robustness, especially at a high current density with a high steam content. While constant voltage electrolysis leads to greater variations of μ O 2 O E ∣ E l . Constant current electrolysis, however, is not suitable for an unstable oxygen electrode because μ O 2 O E ∣ E l can reach a very high value with a gradually increased r i O E . A crack may only occur under certain conditions when p O 2 T P B > p c r .

42 ENGINEERING↗
DOE OSTI2020

Energy storage in magnetic textures driven by vorticity flow

Here, an experimentally feasible energy-storage concept is formulated based on vorticity (hydro)dynamics within an easy-plane insulating magnet. The free energy associated with the magnetic winding texture is built up in a circular easy-plane magnetic structure by injecting a vorticity flow in the radial direction. The latter is accomplished by electrically induced spin-transfer torque, which pumps energy into the magnetic system in proportion to the vortex flux. The resultant magnetic metastable state with a finite winding number can be maintained indefinitely because the process of its relaxation via phase slips is exponentially suppressed when the temperature is brought well below the Curie temperature. We characterize the vorticity-current interaction underlying the energy-loading mechanism through its contribution to the effective electric inductance in the rf response. Our proposal may open an avenue for naturally powering spintronic circuits and nontraditional magnet-based neuromorphic networks.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fouling mechanism in airblast atomizers and its suppression for water desalination

A detailed experimental study is presented on fouling behavior of the anti-clogging perforated plate atomizer designed for high salinity applications, and compared with a conventional (plain-jet) airblast atomizer. Low-pressure regions around fast moving air in the outer layer of spray (as in conventional atomizers: plain-jet and prefilming) due to Venturi suction were identified as the root cause of atomizer clogging, as they facilitate salt accumulation on the atomizer surface from spray. Accordingly, severe atomizer fouling, and fluctuations in spray cone angle were observed in the conventional airblast atomizer over 2 h at 100°C air and 50°C saline (44° to 76° at 35,000 ppm, and 44° to 91° at 100,000 ppm). In this regard, the perforated plate atomizer provides a novel liquid-film airblast atomization by maintaining a liquid-annulus film (around the air outlet) as the outer layer of spray. Doing so we achieved nearly complete suppression of fouling, and spray cone angle fluctuations (28° ± 1° at 35,000 ppm, and 30° ± 1° at 100,000 ppm). Later, novel liquid-film atomization was adopted in the conventional airblast atomizer. While, the conventional airblast atomization needed atomizer cleaning/maintenance after 35 min for 175°C air and 65°C saline at 100,000 ppm, the liquid-film atomization showed no sign of fouling over 14 h. Hence, current work establishes a benchmark liquid-film airblast atomization mechanism in the anti-clogging perforated plate atomizer for complete suppression of fouling in airblast atomization. Furthermore, this extends the application of airblast atomizers from high evaporation jet engines to ZLD-HDH desalination systems, spraying, powder metallurgy, pharmaceuticals and hospitals, and spray drying and cooling.

42 ENGINEERING↗
DOE OSTI2020

Periodic Porous 3D Electrodes Mitigate Gas Bubble Traffic during Alkaline Water Electrolysis at High Current Densities

We report alkaline water electrolysis at high current densities is plagued by gas bubble generation and trapping in stochastic porous electrodes (e.g., Ni foams), which causes a significant reduction in the number of electrolyte accessible catalyst active sites. Here, 3D printed Ni (3DPNi) electrodes with highly controlled, periodic structures are reported that suppress gas bubble coalescence, jamming, and trapping and, hence, result in rapid bubble release. The 3DPNi electrodes decorated with carbon-doped NiO achieve a high current density of 1000 mA cm -2 in 1.0 m KOH electrolyte at hydrogen evolution reaction and oxygen evolution reaction overpotentials of 245 and 425 mV, respectively. This work demonstrates a new approach to the deterministic design of 3D electrodes to facilitate rapid bubble transport and release to enhance the total electrode catalytic activity at commercially relevant current densities.

08 HYDROGEN↗
DOE OSTI2020

Enhanced multi-carbon alcohol electroproduction from CO via modulated hydrogen adsorption

Multi-carbon alcohols such as ethanol are valued as fuels in view of their high energy density and ready transport. Unfortunately, the selectivity toward alcohols in CO 2 /CO electroreduction is diminished by ethylene production, especially when operating at high current densities (>100 mA cm –2 ). Here we report a metal doping approach to tune the adsorption of hydrogen at the copper surface and thereby promote alcohol production. Using density functional theory calculations, we screen a suite of transition metal dopants and find that incorporating Pd in Cu moderates hydrogen adsorption and assists the hydrogenation of C 2 intermediates, providing a means to favour alcohol production and suppress ethylene. We synthesize a Pd-doped Cu catalyst that achieves a Faradaic efficiency of 40% toward alcohols and a partial current density of 277 mA cm –2 from CO electroreduction. The activity exceeds that of prior reports by a factor of 2.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

High Current Cycling in a Superconcentrated Ionic Liquid Electrolyte to Promote Uniform Li Morphology and a Uniform LiF-Rich Solid Electrolyte Interphase

High-energy-density systems with fast charging rates and suppressed dendrite growth are critical for the implementation of efficient and safe next-generation advanced battery technologies such as those based on Li metal. However, there are few studies that investigate reliable cycling of Li metal electrodes under high-rate conditions. in this work, by employing a superconcentrated ionic liquid (IL) electrolyte, we highlight the effect of Li salt concentration and applied current density on the resulting Li deposit morphology and solid electrolyte interphase (SEI) characteristics, demonstrating exceptional deposition/dissolution rates and efficiency in these systems. Operation at higher current densities enhanced the cycling efficiency, e.g., from 64 ± 3% at 1 mA cm –2 up to 96 ± 1% at 20 mA cm –2 (overpotential <±0.2 V), while resulting in lower electrode resistance and dendrite-free Li morphology. A maximum current density of 50 mA cm –2 resulted in 88 ± 3% cycling efficiency, displaying tolerance for high overpotentials at the Ni working electrode (0.5 V). X-ray photoelectron microscopy (XPS), time-of-flight secondary-ion mass spectroscopy (ToF-SIMS), and scanning electron microscopy (SEM) surface measurements revealed that the formation of a stable SEI, rich in LiF and deficient in organic carbon species, coupled with nondendritic and compact Li morphologies enabled enhanced cycling efficiency at higher currents. Reduced dendrite formation at high current is further highlighted by the use of a highly porous separator in coin cell cycling (1 mAh cm –2 at 50 °C), sustaining 500 cycles at 10 mA cm –2 .

25 ENERGY STORAGE↗