Search NASA⌕ Search

SEARCH · Search NASA

Results for “diode model”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13

KSC Tech Transfer News, Volume 2, No. 2

This issue contains articles about: (1) the Innovative Partnerships Program (IPP) and the manager of the program, Alexis Hongamen, (2) New Technology Report (NTR) on a Monte Carlo Simulation to Estimate the Likelihood of Direct Lightning Strikes, (3) Kennedy Space Center's Applied Physics Lab, (4) a virtual ruler that is used for many applications, (5) a portable device that finds low-level leaks, (6) a sun-shield, that supports in-space cryogenic propellant storage, (7) lunar dust modeling software, (8) space based monitoring of radiation damage to DNA, (9) the use of light-emitting diode (LED) arrays vegetable production system, (10) Dust Tolerant Intelligent Electrical Connection Systems, (11) Ice Detection Camera System Upgrade, (12) Repair Techniques for Composite Structures, (13) Cryogenic Orbital Testbed, and (14) copyright protection.

Makufka, David↗

Modeling, design, fabrication, and testing of InP Gunn devices in the D-band (110 GHz - 170 GHz)

The development of fundamental Gunn sources for D-band frequencies requires improvements of doping profiles, processing technology, and circuit design. We have developed a technology for fabricating InP Gunn diodes using an InGaAs etch-stop layer between the InP substrate and the device layers. The epitaxial layers were grown by CBE. During device processing, the substrate is completely removed. Substrateless devices with an n(+) InGaAs cap layer are expected to have reduced contact and series resistances, and skin effect losses. This technology gives better uniformity and control of the device geometry across the processed chip. InP Gunn devices with a 1.7 micron long active region (doping : 9 x 10(exp 15) cm(exp -3)) have been mounted on copper heat sinks. Two tapered leads were then bonded to the diode and to four quartz standoffs. As a preliminary result, an output power of 13 mW at 82 GHz was obtained. Based on these RF measurements, we determine appropriate material parameters to be used in the Ensemble Monte Carlo model. Subsequently, we use this model to design and evaluate the performance of InP Gunn Devices for D-band frequencies. Using the same technology, we are currently processing Gunn devices with a 1 micron long active region for operation at higher frequencies.

Kamoua, R.↗

A database for solid-state laser, optical, and nonlinear materials

The database contains the physical properties of laser, optical, and nonlinear materials used by the laser models of a laser-modeling software system. The database is subdivided into two parts: spectra and tabulated data. The spectra are ASCII files of laser-material's absorption and emission spectra, and laser-diode's emission spectra. The tabulated data contains physical properties of laser, optical, and nonlinear materials, including crystalline, thermal, and mechanical properties. A menu-driven interface allows the execution from a personal directory where the user can store files containing input parameters for a specific model or the results of model's calculations.

Cross, P. L.↗

Landfill Emissions of Methane Inferred from Unmanned Aerial Vehicle and Mobile Ground Measurements

Municipal solid waste landfills are significant sources of atmospheric methane, the second most important greenhouse gas after carbon dioxide. Large emissions of methane from landfills contribute not only to global climate change, but also to local ozone formation due to the enhancement of radical chain lengths in atmospheric reactions of volatile organic compounds and nitrogen oxides. Several advanced techniques were deployed to measure methane emissions from two landfills in the Southeast Michigan ozone nonattainment area during the Michigan–Ontario Ozone Source Experiment (MOOSE). These techniques included mobile infrared cavity ringdown spectrometry, drone-mounted meteorological sensors and tunable diode laser spectrometry, estimation of total landfill emissions of methane based on flux plane measurements, and Gaussian plume inverse modeling of distributed methane emissions in the presence of complex landfill terrain. The total methane emissions measured at the two landfills were of the order of 500 kg/h, with an uncertainty of around 50%. The results indicate that both landfill active faces and leaking gas collection systems are important sources of methane emissions.

Olaguer, Eduardo P.↗

Optical communication with semiconductor laser diodes

A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

Davidson, F.↗

NASA Tech Briefs, October 2006

Topics covered include: Protein Sensors Based on Optical Ring Resonators; Phase Sensor for Aligning a Segmented Telescope Mirror; Control Software for Advanced Video Guidance Sensor; Generating Control Commands From Gestures Sensed by EMG; Multiple-Flat-Panel System Displays Multidimensional Data; 3D X-Ray Luggage-Screening System; Probe Station and Near-Field Scanner for Testing Antennas; Photodetector Arrays for Multicolor Visible/Infrared Imaging; Semiconductor Bolometers Give Background-Limited Performance; Multichannel X-Band Dielectric-Resonator Oscillator; Automatic Alignment of Displacement-Measuring Interferometer; Earth Observing System Data Gateway; Power User Interface; Mercury Shopping Cart Interface; Cassini Archive Tracking System; Architecture Adaptive Computing Environment; Computing Fault Displacements from Surface Deformations; Oxygen-Permeable, Hydrophobic Membranes of Silanized alpha-Al2O3; SiC Composite Turbine Vanes; Retaining Device for the Interior Structure of a Spacecraft Payload; Tool for Torquing Circular Electrical-Connector Collars; System for Continuous Deaeration of Hydraulic Oil; Solar-Powered Cooler and Heater for an Automobile Interior; Improved Oxygen-Beam Texturing of Glucose-Monitoring Optics; Tool for Two Types of Friction Stir Welding; Stationary Apparatus Would Apply Forces of Walking to Feet; Instrument Would Detect and Collect Biological Aerosols; Boundary Condition for Modeling Semiconductor Nanostructures; Miniature Distillation Column for Producing LOX From Air; Even Illumination from Fiber-Optic-Coupled Laser Diodes; Optically Driven Deformable Mirrors; Algorithm for Automated Detection of Edges of Clouds; Exploiting Quantum Resonance to Solve Combinatorial Problems; Hybrid Terrain Database; On Release of Microbe-Laden Particles from Mars Landers; A Concept for Run-Time Support of the Chapel Language; Thermoelectric Inhomogeneities in (Ag(sub 1-y)SbTe2)(sub x)(PbTe)(sub 1-x); and Spacecraft Escape Capsule.

Source record↗

Multidisciplinary research in the space sciences

Research activities were carried out in the following areas during this reporting period: (1) astrophysics; (2) climate and atmospheric modeling; and (3) climate applications of earth observations & geological studies. An ultra-low-noise 115 GHz receiver based upon a superconducting tunnel diode mixer has been designed and constructed. The first laboratory tests have yielded spectacular results: a single-sideband noise temperature of 75 K considerably more sensitive than any other receiver at this frequency. The receiver will replace that currently in use on the Columbia-GISS CO Sky Survey telescope. The 1.2 meter millimeter-wave telescope at Columbia University has been used to complete two large-scale surveys of molecular matter in the part of the inner galaxy which is visible from the Northern hemisphere (the first galactic quadrant); one of the distant galaxy and one of the solar neighborhood. The research conducted during the past year in the climate and atmospheric modeling programs has been focused on the development of appropriate atmospheric and upper ocean models, and preliminary applications of these models. Principal models are a one-dimensional radiative-convective model, a three-dimensional global climate model, and an upper ocean model. During the past year this project has focused on development of 2-channel satellite analysis methods and radiative transfer studies in support of multichannel analysis techniques.

Broecker, W. S.↗

Magnetic skyrmion diode: Unidirectional skyrmion motion via symmetry breaking of potential energy barriers

In this work, we realize a magnetic skyrmion diode operated by a unidirectional skyrmion transport that flows in only one direction, which is highly significant for information processing in spintronic and nanoelectronic devices. We easily control the skyrmion transport by engineering asymmetric shapes of geometric structures. Here, we present a simple method to describe the underlying mechanism behind the unidirectional skyrmion transport by characterizing the topography of potential energy surfaces from a purely geometric perspective. Our approach enables a deeper physical insight into skyrmion transport manipulation and efficient design of skyrmion-based devices in geometric structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A far‐red‐emitting (Gd,Y) 3 (Ga,Al) 5 O 12 :Mn 2+ ceramic phosphor with enhanced thermal stability for plant cultivation

Abstract As for plants, far‐red (FR) light with wavelength from 700 nm to 740 nm is critical for processes of photosynthesis and photomorphogenesis. Light‐controlled development depends on light to control cell differentiation, structural and functional changes, and finally converge into the formation of tissues and organs. Phosphor converted FR emission under LED excitation is a cost‐effective and high‐efficient way to provide artificial FR light source. With the aim to develop an efficient FR phosphor that can promote the plant growth, a series of gadolinium yttrium gallium garnet (GYGAG) transparent ceramic phosphors co‐doped with Mn 2+ and Si 4+ have been fabricated via chemical co‐precipitation method, followed sintered in O 2 and hot isostatic pressing in this work. Under UV excitation, the phosphor exhibited two bright and broadband red emission spectra due to Mn 2+ : 4 T 1 → 6 A 1 spin‐forbidden transition, and one of which located in the right FR region. And then, Ce 3+ ions were co‐doped as the activator to enhance the absorption at blue light region and the emission of Mn 2+ . It turns out that the emission band of GYGAG transparent ceramic phosphors matches well with the absorption band of phytochrome P FR , which means they are promising to be applied in plant cultivation light‐emitting diodes (LEDs) for modulating plant growth. Besides, the thermal stability of this material was investigated systematically, and an energy transferring model involves defects was also proposed to explain the phenomenon of abnormal temperature quenching.

Qiu, Xuting↗

Miniature velocimeter

Laser velocimeter (LV) designed to use semiconductor-diode laser is 100 times smaller than continuous-wave gas-laser velocimeter permitting mounting within wind-tunnel models or on engine walls. Mini LV uses only 0.4 watts of power and measures velocities with accuracy of 98% or better.

Franke, J. M.↗

Laser diode initiated detonators for space applications

Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

Ewick, David W.↗

On the Relationship Between Schottky Barrier Capacitance and Mixer Performance at Cryogenic Temperatures

The flat-band voltage is the Schottky junction voltage required to shrink the depletion width to zero. At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the flat-band condition to minimize conversion loss and noise figure. This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure. A simple analytic expression for C(V) is usually used to model and predict mixer performance. This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique. Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation. The connection between junction capacitance, flat-band potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.

Romanofsky, Robert R.↗

Genetically Engineered Microelectronic Infrared Filters

A genetic algorithm is used for design of infrared filters and in the understanding of the material structure of a resonant tunneling diode. These two components are examples of microdevices and nanodevices that can be numerically simulated using fundamental mathematical and physical models. Because the number of parameters that can be used in the design of one of these devices is large, and because experimental exploration of the design space is unfeasible, reliable software models integrated with global optimization methods are examined The genetic algorithm and engineering design codes have been implemented on massively parallel computers to exploit their high performance. Design results are presented for the infrared filter showing new and optimized device design. Results for nanodevices are presented in a companion paper at this workshop.

Cwik, Tom↗

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Connolly, J. C.↗

Millimeter-wave diode-grid frequency doubler

Monolithic diode grids were fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter-wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field illumination conditions. A second-harmonic conversion efficiency of 9.5 percent and output powers of 0.5 W were achieved at 66 GHz when the diode grid was pumped with a pulsed source at 33 GHz. This grid had 760 Schottky-barrier varactor diodes. The average series resistance was 27 ohms, the minimum capacitance was 18 fF at a reverse breakdown voltage of -3 V. The measurements indicate that the diode grid is a feasible device for generating watt-level powers at millimeter frequencies and that substantial improvement is possible by improving the diode breakdown voltage.

Jou, Christina F.↗

Simulation of GaN-based light emitting diodes incorporating composition fluctuation effects

III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which has enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport mechanisms across InGaN/GaN heterostructures in these devices are not well explained. Fixed polarization sheet charges at InGaN/GaN interfaces lead to large interface dipole charges, which create large potential barriers to overcome. One-dimensional models for transport across such heterostructures predict turn-on voltages that are significantly higher than that found in real devices. As a result, conventional models for transport cannot predict the performance of new designs such as for longer wavelength LEDs or for multi-quantum well LEDs. In this work, we show that incorporating low and high indium compositions within quantum wells at the submicrometer scale can provide an accurate prediction of the characteristics of GaN/InGaN light emitting diodes.

36 MATERIALS SCIENCE↗