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At least 235 records · Page 13

Recirculation of Laser Power in an Atomic Fountain

A new technique for laser-cooling atoms in a cesium atomic fountain frequency standard relies on recirculation of laser light through the atom-collection region of the fountain. The recirculation, accomplished by means of reflections from multiple fixed beam-splitter cubes, is such that each of two laser beams makes three passes. As described below, this recirculation scheme offers several advantages over prior designs, including simplification of the laser system, greater optical power throughput, fewer optical and electrical connections, and simplification of beam power balancing. A typical laser-cooled cesium fountain requires the use of six laser beams arranged as three orthogonal pairs of counter-propagating beams to decelerate the atoms and hold them in a three-dimensional optical trap in vacuum. Typically, these trapping/cooling beams are linearly polarized and are positioned and oriented so that (1) counter-propagating beams in each pair have opposite linear polarizations and (2) three of the six orthogonal beams have the sum of their propagation directions pointing up, while the other three have the sum of their propagation directions pointing down. In a typical prior design, two lasers are used - one to generate the three "up" beams, the other to generate the three "down" beams. For this purpose, the output of each laser is split three ways, then the resulting six beams are delivered to the vacuum system, independently of each other, via optical fibers. The present recirculating design also requires two lasers, but the beams are not split before delivery. Instead, only one "up" beam and one oppositely polarized "down" beam are delivered to the vacuum system, and each of these beams is sent through the collection region three times. The polarization of each beam on each pass through the collection region is set up to yield the same combination of polarization and propagation directions as described above. In comparison with the prior design, the present recirculating design utilizes the available laser light more efficiently, making it possible to trap more atoms at a given laser power or the same number of atoms at a lower laser power. The present design is also simpler in that it requires fewer optical fibers, fiber couplings, and collimators, and fewer photodiodes for monitoring beam powers. Additionally, the present design alleviates the difficulty of maintaining constant ratios among power levels of the beams within each "up" or "down" triplet.

Enzer, Daphna G.↗

Wide-temperature integrated operational amplifier

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Mojarradi, Mohammad↗

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.

Siegel, Peter↗

Wirelessly Interrogated Position or Displacement Sensors

Two simple position or displacement sensors based on inductance-capacitance resonant circuits have been conceived. These sensors are both powered and interrogated without use of wires and without making contact with other objects. Instead, excitation and interrogation are accomplished by means of a magnetic-field-response recorder. Both of the present position or displacement sensors consist essentially of variable rectangular parallel-plate capacitors electrically connected in series with fixed inductors. Simple inductance-capacitance circuits of the type used in these sensors are inherently robust; their basic mode of operation does not depend on maintenance of specific environmental conditions. Hence, these sensors can be used under such harsh conditions as cryogenic temperatures, high pressures, and radioactivity.

Woodard, Stanley E.↗

Highly Efficient Multilayer Thermoelectric Devices

Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron-acceptor (p)-doped and electron-donor (n)-doped, nanometer- thick semiconductor layers.

Boufelfel, Ali↗

Testing of Liquid Metal Components for Nuclear Surface Power Systems

The Early Flight Fission Test Facility (EFF-TF) was established by the Marshall Space Flight Center (MSFC) to provide a capability for performing hardware-directed activities to support multiple in-space nuclear reactor concepts by using a non-nuclear test methodology. This includes fabrication and testing at both the module/component level and near prototypic reactor configurations. The EFF-TF is currently supporting an effort to develop an affordable fission surface power (AFSP) system that could be deployed on the Lunar surface. The AFSP system is presently based on a pumped liquid metal-cooled (Sodium-Potassium eutectic, NaK-78) reactor design. This design was derived from the only fission system that the United States has deployed for space operation, the Systems for Nuclear Auxiliary Power (SNAP) 10A reactor, which was launched in 1965. Two prototypical components recently tested at MSFC were a pair of Stirling power conversion units that would be used in a reactor system to convert heat to electricity, and an annular linear induction pump (ALIP) that uses travelling electromagnetic fields to pump the liquid metal coolant through the reactor loop. First ever tests were conducted at MSFC to determine baseline performance of a pair of 1 kW Stirling convertors using NaK as the hot side working fluid. A special test rig was designed and constructed and testing was conducted inside a vacuum chamber at MSFC. This test rig delivered pumped NaK for the hot end temperature to the Stirlings and water as the working fluid on the cold end temperature. These test were conducted through a hot end temperature range between 400 to 550C in increments of 50 C and a cold end temperature range from 30 to 70 C in 20 C increments. Piston amplitudes were varied from 6 to 1 1mm in .5 mm increments. A maximum of 2240 Watts electric was produced at the design point of 550 hot end, 40 C cold end with a piston amplitude of 10.5mm. This power level was reached at a gross thermal efficiency of 28%. A baseline performance map was established for the pair of 1kW Stirling convertors. The performance data will then be used for design modification to the Stirling convertors. The ALIP tested at MSFC has no moving parts and no direct electrical connections to the liquid metal containing components. Pressure is developed by the interaction of the magnetic field produced by the stator and the current which flows as a result of the voltage induced in the liquid metal contained in the pump duct. Flow is controlled by variation of the voltage supplied to the pump windings. Under steady-state conditions, pump performance is measured for flow rates from 0.5-4.3 kg/s. The pressure rise developed by the pump to support these flow rates is roughly 5-65 kPa. The RMS input voltage (phase-to-phase voltage) ranges from 5-120 V, while the frequency can be varied arbitrarily up to 60 Hz. Performance is quantified at different loop temperature levels from 50 C up to 650 C, which is the peak operating temperature of the proposed AFSP reactor. The transient response of the pump is also evaluated to determine its behavior during startup and shut-down procedures.

Polzin, Kurt A.↗

Orbital Winch for High-Strength, Space-Survivable Tethers

An Orbital Winch mechanism enables high-load, multi-line tethers to be deployed and retracted without rotating the spool on which the tether is wound. To minimize damage to the tether and the wound package during retraction or deployment under load, it can incorporate a Tension Management Module that reduces the infeed tension by a factor of 15 through the use of a powered capstan with guide rollers. This design eliminates the need for rotating high-voltage electrical connections in tether systems that use propellantless electro-dynamic propulsion. It can also eliminate the need for rotating optical connections in applications where the tether contains optical fibers. This winch design was developed to deploy a 15-km-long, 15-kg high-strength Hoytether structure incorporating conductive wires as part of the MXER-1 demonstration mission concept. Two slewing rings that orbit around the tether spool, combined with translation of one of the slewing rings back and forth along the spool axis to traverse the wind point, enables the winch to wind the tether. Variations of the traverse motion of the slewing ring can accomplish level winds and conical pirn winds. By removing the non-traversing slewing ring, and adding an actuated guide arm, the winch can manage rapid, low-drag deployment of a tether off the end of a pirn-wound spool, followed by controlled retraction and rewinding, in a manner very similar to a spin-casting reel. The winch requires at least two motor driver controller units to coordinate the action of two stepper motors to accomplish tether deployment or retraction.

Hoyt, Robert↗

Inline Electrical Connector Mate/Demate Pliers

Military and aerospace industries use Mil-Spec type electrical connections on bulkhead panels that require inline access for mate and demate operations. These connectors are usually in tight proximity to other connectors, or recessed within panels. The pliers described here have been designed to work in such tight spaces, and consist of a mirrored set of parallel handles, two cross links, two return springs, and replaceable polyurethane-coated end effectors. The polyurethane eliminates metal-to-metal contact and provides a high-friction surface between the jaw and the connector. Operationally, the user would slide the pliers over the connector shell until the molded polyurethane lip makes contact with the connector shell edge. Then, by squeezing the handles, the end effector jaws grip the connector shell, allowing the connector to be easily disconnected by rotating the pliers. Mating the connector occurs by reversing the prescribed procedure, except the connector shell is placed into the jaws by hand. The molded lip within the jaw allows the user to apply additional force for difficult-to-mate connectors. Handle design has been carefully examined to maximize comfort, limit weight, incorporate tether locations, and improve ergonomics. They have been designed with an off-axis offset for wiring harness clearance, while placing the connector axis of rotation close to the user s axis of wrist rotation. This was done to eliminate fatigue during multiple connector panel servicing. To limit handle opening width, with user ergonomics in mind, the pliers were designed using a parallel jaw mechanism. A cross-link mechanism was used to complete this task, while ensuring smooth operation.

Yutko, Brian↗

Advanced Flip Chips in Extreme Temperature Environments

The use of underfill materials is necessary with flip-chip interconnect technology to redistribute stresses due to mismatching coefficients of thermal expansion (CTEs) between dissimilar materials in the overall assembly. Underfills are formulated using organic polymers and possibly inorganic filler materials. There are a few ways to apply the underfills with flip-chip technology. Traditional capillary-flow underfill materials now possess high flow speed and reduced time to cure, but they still require additional processing steps beyond the typical surface-mount technology (SMT) assembly process. Studies were conducted using underfills in a temperature range of -190 to 85 C, which resulted in an increase of reliability by one to two orders of magnitude. Thermal shock of the flip-chip test articles was designed to induce failures at the interconnect sites (-40 to 100 C). The study on the reliability of flip chips using underfills in the extreme temperature region is of significant value for space applications. This technology is considered as an enabling technology for future space missions. Flip-chip interconnect technology is an advanced electrical interconnection approach where the silicon die or chip is electrically connected, face down, to the substrate by reflowing solder bumps on area-array metallized terminals on the die to matching footprints of solder-wettable pads on the chosen substrate. This advanced flip-chip interconnect technology will significantly improve the performance of high-speed systems, productivity enhancement over manual wire bonding, self-alignment during die joining, low lead inductances, and reduced need for attachment of precious metals. The use of commercially developed no-flow fluxing underfills provides a means of reducing the processing steps employed in the traditional capillary flow methods to enhance SMT compatibility. Reliability of flip chips may be significantly increased by matching/tailoring the CTEs of the substrate material and the silicon die or chip, and also the underfill materials. Advanced packaging interconnects technology such as flip-chip interconnect test boards have been subjected to various extreme temperature ranges that cover military specifications and extreme Mars and asteroid environments. The eventual goal of each process step and the entire process is to produce components with 100 percent interconnect and satisfy the reliability requirements. Underfill materials, in general, may possibly meet demanding end use requirements such as low warpage, low stress, fine pitch, high reliability, and high adhesion.

Ramesham, Rajeshuni↗

KSC Tech Transfer News, Volume 2, No. 2

This issue contains articles about: (1) the Innovative Partnerships Program (IPP) and the manager of the program, Alexis Hongamen, (2) New Technology Report (NTR) on a Monte Carlo Simulation to Estimate the Likelihood of Direct Lightning Strikes, (3) Kennedy Space Center's Applied Physics Lab, (4) a virtual ruler that is used for many applications, (5) a portable device that finds low-level leaks, (6) a sun-shield, that supports in-space cryogenic propellant storage, (7) lunar dust modeling software, (8) space based monitoring of radiation damage to DNA, (9) the use of light-emitting diode (LED) arrays vegetable production system, (10) Dust Tolerant Intelligent Electrical Connection Systems, (11) Ice Detection Camera System Upgrade, (12) Repair Techniques for Composite Structures, (13) Cryogenic Orbital Testbed, and (14) copyright protection.

Makufka, David↗

Photodetector Arrays for Multicolor Visible/Infrared Imaging

Monolithic focal-plane arrays of photodetectors capable of imaging the same scenes simultaneously in multiple wavelength bands in the visible and infrared spectral regions have been proposed. In prior visible/infrared imaging systems, it has been standard practice to use separate optical trains to form images in visible and infrared wavelength bands on separate visibleand infrared-photodetector arrays. Because the proposal would enable the detection of images in multiple wavelength bands on the same focal plane, the proposal would make it unnecessary to use multiple optical trains. Hence, multispectral imaging systems could be made more compact and the difficulties of aligning multiple optical trains would be eliminated. Each pixel in an array according to the proposal would contain stacks of several photodetectors. The proposal is a logical extension of prior concepts of arrays of stacked photodetectors for imaging in two or three wavelength bands. For example, such an array was described in Three-Color Focal-Plane Array of Infrared QWIPs (NPO-20683), NASA Tech Briefs, Vol. 24, No. 5 (May 2000), page 26a. In one proposed design, (see figure), each pixel would be divided into four subpixels, one being dedicated to a visible- and-near-infrared (V) band, one to a combination of the V band and a verylong- wavelength infrared (VLWIR) band, one to a combination of the V band and a long-wavelength infrared (LWIR) band, and one to a combination of the V band and a medium-wavelength infrared (MWIR) band. For this purpose, each subpixel would include a GaAs-based positive/intrinsic/negative (PIN) photodiode for detection in the V band stacked with three quantum-well infrared photodetectors (QWIPs), each optimized for one of the aforementioned infrared bands. The stacks of photodetectors in all the subpixels would be identical except for the electrical connections, which would be configured to activate the various wavelengthband combinations.

Gunapala, Sarath↗

CdZnTe Image Detectors for Hard-X-Ray Telescopes

Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

Chen, C. M. Hubert↗

Dust-tolerant electrical connector

A connector assembly includes releasably mateable plug and receptacle units. At least one socket is enclosed within the receptacle unit and is aligned with at least one permeable membrane disposed in the front end of the receptacle unit. The plug unit includes a body slidably mounted within a longitudinal bore therein. At least one pin extends from the front end of the body and is aligned with at least one permeable membrane disposed in the front end of the plug unit. The plug unit is biased toward a first, de-mate position in which the body is extended rearwardly such that the pin is enclosed with the plug unit and is slidable to a second, mate position in which the body is compressed forwardly such that the pin projects through the permeable membranes of the plug and receptacle units to electrically connect with the socket.

Sadick, Shazad↗

AIN-Based Packaging for SiC High-Temperature Electronics

Packaging made primarily of aluminum nitride has been developed to enclose silicon carbide-based integrated circuits (ICs), including circuits containing SiC-based power diodes, that are capable of operation under conditions more severe than can be withstood by silicon-based integrated circuits. A major objective of this development was to enable packaged SiC electronic circuits to operate continuously at temperatures up to 500 C. AlN-packaged SiC electronic circuits have commercial potential for incorporation into high-power electronic equipment and into sensors that must withstand high temperatures and/or high pressures in diverse applications that include exploration in outer space, well logging, and monitoring of nuclear power systems. This packaging embodies concepts drawn from flip-chip packaging of silicon-based integrated circuits. One or more SiC-based circuit chips are mounted on an aluminum nitride package substrate or sandwiched between two such substrates. Intimate electrical connections between metal conductors on the chip(s) and the metal conductors on external circuits are made by direct bonding to interconnections on the package substrate(s) and/or by use of holes through the package substrate(s). This approach eliminates the need for wire bonds, which have been the most vulnerable links in conventional electronic circuitry in hostile environments. Moreover, the elimination of wire bonds makes it possible to pack chips more densely than was previously possible.

Savrun, Ender↗

Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs

An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.

Grunthaner, Paula↗

Electrically Small Microstrip Quarter-Wave Monopole Antennas

Microstrip-patch-style antennas that generate monopole radiation patterns similar to those of quarter-wave whip antennas can be designed to have dimensions smaller than those needed heretofore for this purpose, by taking advantage of a feed configuration different from the conventional one. The large sizes necessitated by the conventional feed configuration have, until now, made such antennas impractical for frequencies below about 800 MHz: for example, at 200 MHz, the conventional feed configuration necessitates a patch diameter of about 8 ft (.2.4 m) . too large, for example, for mounting on the roof of an automobile or on a small or medium-size aircraft. By making it possible to reduce diameters to between a tenth and a third of that necessitated by the conventional feed configuration, the modified configuration makes it possible to install such antennas in places where they could not previously be installed and thereby helps to realize the potential advantages (concealment and/or reduction of aerodynamic drag) of microstrip versus whip antennas. In both the conventional approach and the innovative approach, a microstrip-patch (or microstrip-patch-style) antenna for generating a monopole radiation pattern includes an electrically conductive patch or plate separated from an electrically conductive ground plane by a layer of electrically insulating material. In the conventional approach, the electrically insulating layer is typically a printed-circuit board about 1/16 in. (.1.6 mm) thick. Ordinarily, a coaxial cable from a transmitter, receiver, or transceiver is attached at the center on the ground-plane side, the shield of the cable being electrically connected to the ground plane. In the conventional approach, the coaxial cable is mated with a connector mounted on the ground plane. The center pin of this connector connects to the center of the coaxial cable and passes through a hole in the ground plane and a small hole in the insulating layer and then connects with the patch above one-third of the radial distance from the center. The modified feed configuration of the innovative approach is an inductive-short-circuit configuration that provides impedance matching and that has been used for many years on other antennas but not on microstrip-style monopole antennas. In this configuration, the pin is connected to both the conductive patch and the ground plane. As before, the shield of the coaxial cable is connected to the ground plane, but now the central conductor is connected to a point on the pin between the ground plane and the conductive plate (see figure). The location of the connection point on the pin is chosen so that together, the inductive short circuit and the conductive plate or patch act as components of a lumped-element resonant circuit that radiates efficiently at the resonance frequency and, at the resonance frequency, has an impedance that matches that of the coaxial cable. It should be noted that the innovative design entails two significant disadvantages. One disadvantage is that the frequency bandwidth for efficient operation is only about 1/20 to 1/15 that of a whip antenna designed for the same nominal frequency. The other disadvantage is that the estimated gain is between 3-1/2 and 4-1/2 dB below that of the whip antenna. However, if an affected radio-communication system used only a few adjacent frequency channels and the design of the components of the system other than the antenna provided adequate power or gain margin, then these disadvantages could be overcome.

Young, W. Robert↗

Photodiode-Based, Passive Ultraviolet Dosimeters

Simple, passive instruments have been developed for measuring the exposure of material specimens to vacuum ultraviolet (VUV) radiation from the Sun. Each instrument contains a silicon photodiode and a coulometer. The photocharge generated in the photodiode is stored in the coulometer. The accumulated electric charge measured by use of the coulometer is assumed to be proportional to the cumulative dose of VUV radiation expressed in such convenient units as equivalent Sun hours (ESH) [defined as the number of hours of exposure to sunlight at normal incidence]. Intended originally for use aboard spacecraft, these instruments could also be adapted to such terrestrial uses as monitoring the curing of ultraviolet-curable epoxies. Each instrument includes a photodiode and a coulometer assembly mounted on an interface plate (see figure). The photodiode assembly includes an aluminum housing that holds the photodiode, a poly(tetrafluoroehylene) cosine receptor, and a narrow-band optical filter. The cosine receptor ensures that the angular response of the instrument approximates the ideal angular response (proportional to the cosine of the angle of incidence). The filter is chosen to pass the ultraviolet wavelength of interest in a specific experiment. The photodiode is electrically connected to the coulometer. The factor of proportionality between the charge stored in the coulometer and ultraviolet dosage (in units of ESH) is established, prior to use, in calibration experiments that involve the use of lamps and current sources traceable to the National Institute of Standards and Technology.

Vaughn, Jason A.↗

120-GHz HEMT Oscillator With Surface-Wave-Assisted Antenna

Two monolithic microwave integrated circuits (MMICs) have been designed and built to function together as a source of electromagnetic radiation at a frequency of 120 GHz. One of the MMICs is an oscillator and is the highest-power 120-GHz oscillator reported thus far in the literature. The other MMIC is an end-fire antenna that radiates the oscillator signal. Although these MMICs were constructed as separate units and electrically connected with wire bonds, future oscillator/ antenna combinations could readily be fabricated as monolithic integrated units. Such units could be used as relatively high-power solid-state microwave sources in diverse applications that include automotive radar, imaging, scientific instrumentation, communications, and radio astronomy. As such, these units would be attractive alternatives to vacuum-tube oscillators, which are still used to obtain acceptably high power in the frequency range of interest. The oscillator (see figure) includes a high-electron-mobility transistor (HEMT), with gate-periphery dimensions of 4 by 37 m, in a common-source configuration. The series feedback element of the oscillator is a grounded coplanar waveguide (CPW) at the source. The HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle) to maximize the output power of the oscillator. Input and output impedance-matching circuit elements are designed to maximize output power and to establish the conditions needed for oscillation. The design of the antenna takes advantage of surface waves, which, heretofore, have been regarded as highly disadvantageous because they can leak power and degrade the performances of antennas that have not been designed to exploit them. Measures taken to suppress surface waves have included complex machining of circuit substrates and addition of separate substrates. These measures are difficult to implement in standard MMIC fabrication processes. In contrast, because the design of the present antenna eliminates the need to suppress surface waves, the fabrication of the antenna is fully compatible with standard MMIC fabrication processes.

Samoska, Lorene↗