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At least 235 records · Page 13

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NASA NTRS2011

Low Fluid Shear Culture of Staphylococcus Aureus Represses hfq Expression and Induces an Attachment-Independent Biofilm Phenotype

Background: The opportunistic pathogen, Staphylococcus aureus, experiences fluctuations in fluid shear during infection and colonization of a human host. Colonization frequently occurs at mucus membrane sites such as in the gastrointestinal tract where the bacterium may experience low levels of fluid shear. The response of S. aureus to low fluid shear remains unclear. Methods: S. aureus was cultured to stationary phase using Rotating-Wall Vessel (RWV) bioreactors which produce a physiologically relevant low fluid shear environment. The bacterial aggregates that developed in the RWV were evaluated by electron microscopy as well as for antibiotic resistance and other virulence-associated stressors. Genetic expression profiles for the low-shear cultured S. aureus were determined by microarray analysis and quantitative real-time PCR. Results: Planktonic S. aureus cultures in the low-shear environment formed aggregates completely encased in high amounts of extracellular polymeric substances. In addition, these aggregates demonstrated increased antibiotic resistance indicating attachment-independent biofilm formation. Carotenoid production in the low-shear cultured S. aureus was significantly decreased, and these cultures displayed an increased susceptibility to oxidative stress and killing by whole blood. The hfq gene, associated with low-shear growth in Gram negative organisms, was also found to be down-regulated in S. aureus. Conclusions: Collectively, this data suggests that S. aureus decreases virulence characteristics in favor of a biofilm-dwelling colonization phenotype in response to a low fluid shear environment. Furthermore, the identification of an Hfq response to low-shear culture in S. aureus, in addition to the previously reported responses in Gram negative organisms, strongly suggests an evolutionarily conserved response to mechanical stimuli among structurally diverse prokaryotes.

Ott, C. Mark↗

NASA NTRS1989

Microwave microstrip resonator measurements of Y1Ba2Cu3O(7-x) and Bi2Sr2Ca1Cu2O(8-y) thin films

Radio frequency (RF) surface resistance measurement experiments on high T(sub c) thin films were performed. The method uses a microstrip resonator comprising a top gold conductor strip, an alumina dielectric layer, and a separate superconductivity ground plane. The surface resistance of the superconducting ground plane can be determined, with reference to a gold calibration standard, from the measured quality factor of the half-wave resonator. Initial results near 7 GHz over the temperature range from 25 to 300 K are presented for YBa2Cu3O(7-x) and Bi2Sr2CaCu2O(8-y) thin film samples deposited by an electron beam flash evaporation process. The RF surface resistance at 25 K for both materials in these samples was found to be near 25 milliohms.

Lichtenberg, Christopher L.↗

NASA NTRS1967

Bacteriostatic conformal coating for electronic components

Coating for electronic components used in space applications has bacteriostatic qualities capable of hindering bacterial reproduction, both vegetative and sporulative viable microorganisms. It exhibits high electrical resistivity, a low outgassing rate, and is capable of restraining electronic components when subjected to mechanical vibrations.

Bland, C.↗

NASA NTRS2006

Electrically Conductive Anodized Aluminum Surfaces

Anodized aluminum components can be treated to make them sufficiently electrically conductive to suppress discharges of static electricity. The treatment was conceived as a means of preventing static electric discharges on exterior satin-anodized aluminum (SAA) surfaces of spacecraft without adversely affecting the thermal-control/optical properties of the SAA and without need to apply electrically conductive paints, which eventually peel off in the harsh environment of outer space. The treatment can also be used to impart electrical conductivity to anodized housings of computers, medical electronic instruments, telephoneexchange equipment, and other terrestrial electronic equipment vulnerable to electrostatic discharge. The electrical resistivity of a typical anodized aluminum surface layer lies between 10(exp 11) and 10(exp 13) Omega-cm. To suppress electrostatic discharge, it is necessary to reduce the electrical resistivity significantly - preferably to < or = 10(exp 9) Omega-cm. The present treatment does this. The treatment is a direct electrodeposition process in which the outer anodized surface becomes covered and the pores in the surface filled with a transparent, electrically conductive metal oxide nanocomposite. Filling the pores with the nanocomposite reduces the transverse electrical resistivity and, in the original intended outer-space application, the exterior covering portion of the nanocomposite would afford the requisite electrical contact with the outer-space plasma. The electrical resistivity of the nanocomposite can be tailored to a value between 10(exp 7) and 10(exp 12) Omega-cm. Unlike electrically conductive paint, the nanocomposite becomes an integral part of the anodized aluminum substrate, without need for adhesive bonding material and without risk of subsequent peeling. The electrodeposition process is compatible with commercial anodizing production lines. At present, the electronics industry uses expensive, exotic, electrostaticdischarge- suppressing finishes: examples include silver impregnated anodized, black electroless nickel, black chrome, and black copper. In comparison with these competing finishes, the present nanocomposite finishes are expected to cost 50 to 20 percent less and to last longer.

Nguyen, Trung Hung↗

NASA NTRS2004

LERCIP 2004 Summary

This summer I am continuing my project from the previous two summers. My work involves ohmic contacts to N-type silicon carbide (Sic) devices. My mentor, Dr. Robert Okojie, is developing the technology behind high performance sensors and actuators for harsh environments. Sic is useful because it is able to operate at temperatures up to 600 C and it is resistant to radiation damage. This allows sensors and electronics to be placed in new locations, such as inside a jet engine or in space application without using heavy shielding. Ultimately this results in more efficient, smarter engine technology, reduced launch weights for spacecraft, and high power and high temperature electronics. A fundamental part of Sic devices is the ohmic contact. The contact is the interface between the semiconductor (Sic) and external circuitry. The current flowing in and out the devices is through the contact. Ensuring that these contacts remain ohmic (linear I-V behavior) allows us to fabricate devices that do not waste power at the metallurgical junction. Another key part is maintaining a low contact resistance. It is desired to maintain minimum energy loss by avoiding a rectifying electrical characteristic. My project is to develop and implement a testing procedure for measuring the contact resistance while the device is operating at high temperature. It is important to measure the contacts while simulating the true operating environment as closely as possible. For this reason, measurements are taken while the device is heated at intervals up to 600 C in air. To test the long tern reliability of the devices, the high temperature measurements are repeated after heating the sample for long intervals in air. A new set of data is gathered after heating for a total of 100, 200 and then 400 hours. The current as a function of voltage and the contact resistance was measured using the four point probe technique. The four point probe method is chosen because it measures contact resistance while eliminating error due to wire resistance and calibration issues.

DeAngelis, David↗

NASA NTRS1991

Composition dependence of superconductivity in YBa2(Cu(3-x)Al(x))Oy

Eleven different compositions in the system YBa2(Cu(3-x)Al(x))O(y) (x = 0 to 0.3) have been synthesized and characterized by electrical resistivity measurements, powder x-ray diffraction, and scanning electron microscopy. The superconducting transition temperature T sub c (onset) was almost unaffected by the presence of alumina due to its limited solubility in YBa2Cu3O(7-x). However, T sub c(R = 0) gradually decreased, and the resistive tails became longer with increasing Al2O3 concentration. This was probably due to formation of BaAl2O4 and other impurity phases from chemical decomposition of the superconducting phase by reaction with Al2O3.

Bansal, Narottam P.↗

NASA NTRS1993

Composition dependence of superconductivity in YBa2(Cu(3-x)Al(x))O(y)

Eleven different compositions in the system YBa2(Cu(3-x)Al(x))O(y) (x = 0 to 0.3) have been synthesized and characterized by electrical resistivity measurements, powder X-ray diffraction, and scanning electron microscopy. The superconducting transition temperature T sub c (onset) was almost unaffected by the presence of alumina due to its limited solubility in YBa2Cu3O(7-x). However, T sub c(R = 0) gradually decreased, and the resistive tails became longer with increasing Al2O3 concentration. This was probably due to formation of BaAl2O4 and other impurity phases from chemical decomposition of the superconducting phase by reaction with Al2O3.

Bansal, N. P.↗

NASA NTRS1989

Synthesis and characterization of high-Tc superconductors in the Tl-Ca-Ba-Cu-O system

Both Tl2Ca2Ba2Cu3O10 and TlCa3BaCu3O8.5 are investigated for superconductivity as a function of the sintering temperature, time, atmosphere, and quench rate in an effort to synthesize the high-Tc superconducting phase in the thallium system. The samples are characterized by electrical resistivity measurements, X-ray diffraction, and scanning electron microscopy. Samples of starting composition Tl2Ca2Ba2Cu3O10 fired in air at 860-900 C and rapidly quenched show a Tc of 96-107 K. In contrast, specimens of starting composition TlCa3BaCu3O8.5 when baked at 900 C and slowly cooled in oxygen superconduct at 116 K and above and consist of Tl2Ca2Ba2Cu3O(10+x) as the dominant phase. The results also show that, in contrast to the case of YBa2Cu3O(7-x), doping with a small concentration of fluorine sharpens the resistive transition and produces a large Tc increase in thallium-based superconductors.

Bansal, Narottam P.↗

NASA NTRS2003

Where is scattering important in nanotransistors?

This viewgraph presentation provides an overview of scattering in nanotransistors. Topics covered include: scattering mechanisms, devices used and series resistance. The authors conclude: (1) the influence of electron-photon scattering on the on-current of dual gate MOSFET's using the non-equilibrium Green's function method and (2) the influence of the drain extension region can no longer be modeled as a series resistance.

Anantram, M. P.↗

NASA NTRS2003

LabVIEW Serial Driver Software for an Electronic Load

A LabVIEW-language computer program enables monitoring and control of a Transistor Devices, Inc., Dynaload WCL232 (or equivalent) electronic load via an RS-232 serial communication link between the electronic load and a remote personal computer. (The electronic load can operate at constant voltage, current, power consumption, or resistance.) The program generates a graphical user interface (GUI) at the computer that looks and acts like the front panel of the electronic load. Once the electronic load has been placed in remote-control mode, this program first queries the electronic load for the present values of all its operational and limit settings, and then drops into a cycle in which it reports the instantaneous voltage, current, and power values in displays that resemble those on the electronic load while monitoring the GUI images of pushbuttons for control actions by the user. By means of the pushbutton images and associated prompts, the user can perform such operations as changing limit values, the operating mode, or the set point. The benefit of this software is that it relieves the user of the need to learn one method for operating the electronic load locally and another method for operating it remotely via a personal computer.

Scullin, Vincent↗

NASA NTRS1974

The Ranicon - A resistive anode image converter

A versatile photon and charged particle imaging system is described. The Ranicon employs a microchannel electron multiplier plate to convert each detected event into a charge signal. This charge pulse is proximity-focused onto a large-area resistive anode plate equipped with pickup electrodes on its edges. Each event is located electronically by the ratios of the charges collected at the edges or by the differences of the signals' risetimes. One- or two-dimensional pictures are built up by storing events digitally (e.g., a core memory) or in analog form (e.g., a storage oscilloscope). Compact laboratory models have been constructed and tested. Operating characteristics, applications, limitations, and advantages of the Ranicon are discussed.

Lampton, M.↗

NASA NTRS1990

GaAs CCD readout for engineered bandgap detectors

GaAs and related heterostructure charge-coupled devices (CCDs) for detector array readout multiplexer applications are described. Features of resistive-gate CCDs are compared with capacitive-gate CCDs for this application. Design examples of GaAs CCD readouts for linear and two-dimensional detector arrays with different detection methods and signal coupling schemes are described. Recent progress in two-dimensional electron gas (2DEG) Al(0.3)Ga(0.7)As/GaAs resistive-gate CCDs is also presented. The 2DEG resistive-gate CCD conventional buried-channel GaAs CCD.

Song, J.-I.↗

NASA NTRS1978

Measurements of material properties for solar cells

Measurements on two candidate materials for space flight are reported. The observed optical transmittance of aluminum films vapor deposited on fused quartz showed anomalously high transmittance thru 400 A and 600 A and showed an effective skin depth of 110 A in the latter part of the 1000 A thickness. KAPTON films are shown by their optical transmission spectra to have an energy gap for electron excitation of approximately 2.5 eV, which value depends on the thickness as manufactured. The resistance of KAPTON film to ionizing radiation is described by their optical spectra and their electron spin resonance spectra.

Castle, J. G., Jr.↗

NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗

NASA NTRS1978

Size effects and electron microscopy of thin metal films

All films were deposited by resistive heated evaporation in an oil diffusion pumped vacuum system (ultimate approx. equal to 0.0000001 torr). The growth from nuclei to a continuous film is highly dependent on the deposition parameters, evaporation rate as well as substrate material and substrate temperature. The growth stages of a film and the dependence of grain size on various deposition and annealing parameters are shown. Resistivity measurements were taken on thin films to observe size effects.

Hernandez, J. D.↗

NASA NTRS1987

Quadrupolar Kondo effect in uranium heavy-electron materials?

The possibility of an electric quadrupole Kondo effect for a non-Kramers doublet on a uranium (U) ion is a cubic metallic host is demonstrated by model calculations showing a Kondo upturn in the resistivity, universal quenching of the quadrupolar moment, and a heavy-electron anomaly in the electronic specific heat. With inclusion of excited crystal-field levels, some of the unusual magnetic-response data in the heavy-electron superconductor UBe13 may be understood. Structural phase transitions at unprecedented low temperatures may occur in U-based heavy-electron materials.

Cox, D. L.↗

NASA NTRS2010

Electrical Switching of Perovskite Thin-Film Resistors

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Liu, Shangqing↗

NASA NTRS1978

Electron emission from nickel-alloy surfaces in cesium vapor

An experimental apparatus and measurement techniques are described for measuring the thermionic emission from cesium-activated materials having adequate high-temperature properties such as creep strength and corrosion resistance, which might ultimately reduce the cost of thermionic converters. The electron emission characteristics are measured for nickel, Inconel 600, and Hastelloy X probes with a 412 K cesium reservoir. It is found that the nickel alloys exhibit a peak electron emission 1.4 to 2.1 times greater than pure nickel. Both the Inconel and the Hastelloy samples have work functions of 1.64 eV at peak emission. The minimum cesiated work functions are estimated to be 1.37 eV for Inconel at a probe temperature of 750 K and 1.4 eV for Hastelloy at a probe temperature of 665 K. The bare work functions for both alloys is estimated to be about the same as for pure nickel, 4.8 eV.

Manda, M.↗