Search NASA⌕ Search

SEARCH · Search NASA

Results for “heterojunctions”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Two-Dimensional Polycyclic Photovoltaic Molecule with Low Trap Density for High-Performance Photocatalytic Hydrogen Evolution

Typical organic semiconductors show a high trap density of states (10 16 –10 18 cm -3 ), providing a large number of centers for charge-carrier recombination, thus hindering the development of photocatalytic hydrogen evolution. In this report we design and synthesize a two-dimensional polycyclic photovoltaic material, named as TPP, to reduce the trap density to as low as 2.3×10 15 cm -3 , which is 1–3 orders of magnitude lower than those of typical organic semiconductors. Moreover, TPP exhibits a broad and strong absorption, ordered molecular packing with a large crystalline coherence length and enhanced electron mobility. Then, the bulk heterojunction nanoparticles (BHJ-NPs) based on a blend of polymer donor (PM6) and TPP exhibit an average hydrogen evolution rate (HER) of 64.31 mmol h -1 g -1 under AM1.5G sunlight (100,mW cm -2 ), and 72.75 mmol h -1 g -1 under 330–1100 nm illumination (198 mW cm -2 ) higher than that of the control NPs based on typical PM6 : Y6 (62.67 mmol h -1 g -1 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures

Abstract Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m −2 (at 340 nm) and 45°C through 4.02 MJ·m −2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (<−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.

14 SOLAR ENERGY↗
DOE OSTI2021

Optimizing Vertical Crystallization for Efficient Perovskite Solar Cells by Buried Composite Layers

Planar-heterojunction perovskite solar cells (PSCs) have experienced rapid evolution in recent years because of the low-temperature processing, suitable alignment, and high mobility of the tin oxide buried contact layer. However, improper SnO 2 surface states and poor crystallinity of the top perovskite films are still the main obstacles for the planar PSCs in which performance always lags behind their mesoporous counterparts. Herein, a new buried contact is reported by introducing graphitic carbon nitride (g-C 3 N 4 ) into the commonly used SnO 2 which performs outstanding transmittance, conductivity, and surface states for a high-quality electron-transporting layer. Moreover, the vertical composition and crystallinity of the top perovskite film are manipulated by rich amino groups on the edge of the g-C 3 N 4 nanosheets which induce the prenucleation of the lead-rich species at the buried interface. Benefiting from the high-quality buried contacts and the optimized perovskite layers, the resultant PSCs achieve a champion efficiency of 21.5% with all photovoltaic parameters enhanced in comparison with their control counterparts (<20%).

planar-heterojunction perovskite solar cells↗
DOE OSTI2023

C@SnS 2 core-shell 0D/2D nanocomposite with excellent electrochemical performance as lithium-ion battery anode

C@SnS 2 core-shell 0D/2D nanocomposite was successfully prepared by a one-step hydrothermal method. The SnS 2 nanosheets were heterogeneously nucleated and grown on the surface of carbon spheres. As an anode for lithium-ion batteries, the electrochemical performance of the C@SnS 2 composite outperforms that of SnS 2 nanoflowers. After 100 cycles, the reversible discharge specific capacity reaches an impressive value of 802 mAh g -1 at a current density of 100 mA g -1 . Even after 600 cycles, the discharge specific capacity remains a value of 442 mAh g -1 , under a high current density of 1 A g -1 . Further, this remarkable lithium-ion storage performance can be attributed to the unique core-shell nanostructure and the synergy between SnS 2 nanosheets and carbon spheres. This study advances our understanding of the vital role of carbon in fabricating nano-heterojunction or composite electrodes and provides a feasible route to significantly improve the electrochemical properties of SnS 2 and other metal sulfides.

25 ENERGY STORAGE↗
DOE OSTI2022

Revealing aggregation of non-fullerene acceptors in intermixed phase by ultraviolet-visible absorption spectroscopy

Non-fullerene acceptor (NFA) aggregation is crucial in determining bulk-heterojunction (BHJ) organic photovoltaic (OPV) performance. However, it is still a big challenge to characterize the nanostructure of NFAs in the disordered donor-acceptor intermixed phase. Here, we demonstrate a method to characterize NFA aggregation and composition in the intermixed phase by measuring NFA concentration-dependent ultraviolet-visible (UV-vis) absorption spectroscopy of BHJ films. In various polymer:NFA films, an absorption shift as a function of increasing molecular concentration (ASIMC) phenomenon is observed, and different NFA aggregation behaviors can be distinguished. The ASIMC method was then applied to study the influence of processing conditions on the NFA concentration in the intermixed phase of devices to establish a correlation with device efficiency. The current work provides a feasible tool to study the nanostructure of NFAs in the complex polymer matrix and to understand the variations in the NFA concentration in the intermixed phase under non-equilibrium conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Impact of dipolar molecules on the reliability of organic photovoltaic cells

Blending two non-fullerene acceptors (NFAs) to form bulk heterojunctions (BHJs) in ternary organic photovoltaics (OPVs) has been shown to lead to an end-capping exchange reaction that results in the generation of several new dipolar species whose impact on OPV operational stability remains uncertain. Here, we investigate the reliability of a ternary OPV system intentionally blended with dipolar NFA molecules. We reveal that an intrinsic contribution to OPV degradation is the reorganization and reorientation of the dipolar molecules during operation, which leads to an increased dielectric constant (ε r ) of the BHJ. Consequently, the electric field across the BHJ with dipolar molecules decreases compared with that of a non-dipolar BHJ under the same applied voltage, leading to a larger reduction in charge collection efficiency over time. This result has implications on the stability of a range of organic electronic devices containing dipolar molecules.

14 SOLAR ENERGY↗
DOE OSTI2020

Engineering Edge States of Graphene Nanoribbons for Narrow-Band Photoluminescence

Solid-state narrow-band light emitters are on-demand for quantum optoelectronics. Current approaches based on defect engineering in low-dimensional materials usually introduce a broad range of emission centers. Here, we report narrow-band light emission from covalent heterostructures fused to the edges of graphene nanoribbons (GNRs) by controllable on-surface reactions from molecular precursors. Two types of heterojunction (HJ) states are realized by sequentially synthesizing GNRs and graphene nanodots (GNDs) and then coupling them together. HJs between armchair GNDs and armchair edges of the GNR are coherent and give rise to narrow-band photoluminescence. In contrast, HJs between the armchair GNDs and the zigzag ends of GNRs are defective and give rise to nonradiative states near the Fermi level. At low temperatures, sharp photoluminescence emissions with peak energy range from 2.03 to 2.08 eV and line widths of 2–5 meV are observed. Furthermore, the radiative HJ states are uniform, and the optical transition energy is controlled by the band gaps of GNRs and GNDs. As these HJs can be synthesized in a large quantity with atomic precision, this finding highlights a route to programmable and deterministic creation of quantum light emitters.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

We present an inverted metamorphic rear heterojunction ~1.0 eV GaInAs solar cell deposited by dynamic hydride vapor phase epitaxy (D-HVPE) with high growth rate. This device uses a Ga 1-x In x P compositionally graded buffer (CGB) to bridge the lattice constant gap between the GaAs substrate and the Ga0.71In0.29As emitter layer. High-resolution x-ray diffraction and transmission electron microscopy confirm that the Ga 0.71 In 0.29 As emitter is grown lattice-matched to the in-plane lattice constant of the CGB with minimal generation of defects at the GaInAs/GaInP interface. The device contains a threading dislocation density of 2.3 × 10 6 cm -2 , a level that enables high-performance minority carrier devices and is comparable to previously demonstrated GaInP CGBs grown by D-HVPE. The device exhibits an open-circuit voltage of 0.589 V under a one-sun AM1.5G illumination condition and a bandgap-voltage offset of 0.407 V, indicating metamorphic epitaxial performance nearly equal to state-of-the-art devices. We analyze the dark current of the device and determine that reducing recombination in the depletion region, which can be achieved by reducing the threading dislocation density and optimizing the device doping density, will improve the device performance. Furthermore, the CGB and device layers, comprising ~8 µm of thickness, are grown in under 10 min, highlighting the ability of D-HVPE to produce high-quality metamorphic devices of all types with the potential for dramatically higher throughput compared to present technology.

14 SOLAR ENERGY↗
DOE OSTI2021

Compensated Contacts for Three-Terminal Transistor Solar Cells

The heterojunction bipolar transistor solar cell (HBTSC) is an alternative to conventional double-junction solar cells that combines the advantages of three-terminal architectures with a compact design. A critical part of the HBTSC fabrication is the implementation of the middle contact, the one associated to the base layer in the transistor structure, because this layer can be damaged by the diffusion of metallic species during contact annealing. As a solution we propose to implement a "compensated contact", that is, to leave a thin (< 200 nm) portion of emitter or collector between the base layer and the contact metals and compensate its doping during contact annealing. Using an Au/Zn/Au metal structure to compensate a 150 nm thick portion of the collector, we obtain a specific contact resistance ~8 10-4 ..omega.. cm2. This value is fairly invariant for annealing temperatures between 400 and 460 degrees C and annealing times between 2 and 5 minutes, and it does not improve by adding Pd to the metallic stack. Optimizing the compensated contact technology opens the path to the realization of III-V-material-based HBTSCs with open-circuit voltages and fill factors comparable to those of conventional multijunction architectures.

contact resistance↗
DOE OSTI2020

Enabling Efficiencies > 22.5% with Metal Oxide Passivating Contacts using Low-Cost Spatial Atomic Layer Deposition (Final Technical Report)

In this project, the University of Central Florida (UCF) worked to both increase module efficiency and reduce manufacturing cost by driving demonstrated lab-scale passivating contact technology using materials and processes compatible with high-volume manufacturing for crystalline silicon (c-Si) photovoltaic (PV) cells. Passivating contacts have garnered significant attention in recent years. They provide a means of suppressing contact recombination, a loss mechanism that limits the performance of industrially relevant cell architectures like Al back surface field (Al-BSF) cells and passivated emitter and rear cells (PERC). Most of the development of passivating contact technology has focused on the use of doped amorphous silicon or doped polysilicon contacts, but both suffer from parasitic optical absorption amongst other issues. Our team developed fully transparent hole-selective heterojunctions, deposited using atomic layer deposition (ALD), and showed how they could be incorporated into c-Si PV cells. The team conducted experiments to understand the process-structure-property relationship of hole-selective oxides, surface passivation oxide materials, and transparent conductive oxides deposited by ALD, and use that understanding to reduce contact recombination, contact resistivity, and parasitic optical absorption within c-Si PV cells. Before getting into the details of the report, we would like to note that COVID-19 has made it more challenging to conduct experimental research at UCF. UCF has a number of mandatory policies in place to ensure social distancing, testing, and contact tracing are all carried out in day-to-day operations. Despite these challenges, we worked diligently to make progress on this project in a manner that was as safe as possible. Over the course of the project, the UCF team and its collaborators have made the following discoveries and developments.

14 SOLAR ENERGY↗
DOE OSTI2022

Microdroplet Electrospray Localized Laser Printing and Sintering of Nanoparticles for Passivating, Carrier-Selective Contacts (Final Technical Report)

In this project, the team used a nanoparticle electrospray laser deposition (NELD) process developed at the University of Central Florida (UCF) to address current limitations of passivating, carrier-selective contact technologies for crystalline silicon (c-Si) photovoltaic (PV) cells. The NELD process was used to print low bulk line resistivity Ag contacts directly onto transparent conductive oxides (TCOs), like indium tin oxide (ITO), for hydrogenated amorphous silicon (a-Si:H) based c-Si heterojunction (SHJ) cells without any subsequent contact firing step needed.

14 SOLAR ENERGY↗
DOE OSTI2026

Screen-Printed SHJ Solar Cells with Complex Silver Inks

Metallization using complex metal inks has gained significant research interest due to its cost-effectiveness and ability to achieve performance comparable to traditional nanoparticle pastes. This study introduces the use of complex silver (Ag) inks applied via industrial screen-printing for silicon heterojunction (SHJ) solar cell metallization. The printed Ag lines exhibit a contact resistivity on SHJ tin-doped indium oxide (ITO) surfaces as low as approximately 0.2-12 mO cm2. Photoluminescence imaging reveals minimal surface passivation degradation (iVoc < 3.5 mV), while scanning electron microscopy (SEM) shows a denser structure compared to Ag layer from nanoparticle pastes. The printed Ag grid features thin (approximately 1 micrometer), continuous fingers approximately 100-120 micrometer wide, significantly thinner than conventional approximately 20-30 micrometer fingers produced with nanoparticle-based pastes. Double printing achieves SHJ device efficiencies exceeding 20%, the highest reported for industrial solar cell precursors using this technology. These findings highlight the potential of complex Ag inks as a sustainable alternative to particle-based pastes, reducing Ag consumption and processing temperatures without compromising efficiency.

14 SOLAR ENERGY↗
DOE OSTI2024

Nanostructured C@CuS Core–Shell Framework with High Lithium-Ion Storage Performance

In this study, we have synthesized a nanostructured core–shell framework of carbon-coated copper sulfide (C@CuS) through a one-step precipitation technique. The carbon sphere template facilitated the nucleation of CuS nanostructures. The synthesized nanocomposites have demonstrated remarkable lithium-ion storage capabilities when utilized as an anode in lithium-ion batteries. Notably, they exhibit an impressive rate capability of 314 mAh g -1 at a high current density of 5000 mA g -1 , along with excellent long-term cycle stability, maintaining 463 mAh g -1 at 1000 mA g -1 after 800 cycles. This superior performance is due to the core–shell architecture of the composite, where the carbon core enhances the conductivity of CuS nanoparticles and mitigates volume expansion, thus preventing capacity loss. Our study not only elucidates the significance of carbon in the construction of nano-heterojunctions or composite electrodes but also presents a practical approach to significantly boost the electrochemical performance of CuS and other metal sulfides.

25 ENERGY STORAGE↗
DOE OSTI2021

Effect of Palladium‐Tetrakis(Triphenylphosphine) Catalyst Traces on Charge Recombination and Extraction in Non‐Fullerene‐based Organic Solar Cells

Abstract The effect of the cross‐coupling catalyst tetrakis(triphenylphosphine)palladium(0) (Pd(PPh 3 ) 4 ) on the performance of a model organic bulk‐heterojunction solar cell composed of a blend of poly([2,6′‐4,8‐di(5‐ethylhexylthienyl)benzo[1,2‐b;3,3‐b]dithiophene]{3‐fluoro‐2[(2‐ethylhexyl)carbonyl]thieno[3,4‐b]thiophenediyl}) (PTB7‐Th) donor and 3,9‐bis(2‐methylene‐((3‐(1,1‐dicyanomethylene)‐6,7‐difluoro)‐indanone))‐5,5,11,11‐tetrakis(4‐hexylphenyl)‐dithieno[2,3‐d:2′,3′‐d′]‐s‐indaceno[1,2‐b:5,6‐b′]dithiophene (IOTIC‐4F) non‐fullerene acceptor is investigated. The effect of intentional addition of different amounts of Pd(PPh 3 ) 4 on morphology, free charge carrier generation, non‐geminate bulk trap‐ and surface trap‐assisted recombination as well as bimolecular recombination and charge extraction is quantified. This work shows that free charge carrier generation is affected significantly, while the impact of Pd(PPh 3 ) 4 on non‐geminate recombination processes is limited because the catalyst does not facilitate efficient trap‐assisted recombination. The studied system shows substantial robustness towards the addition of Pd(PPh 3 ) 4 in small amounts.

Schopp, Nora↗
DOE OSTI2021

Highly Efficient Ternary Solar Cells with Efficient Förster Resonance Energy Transfer for Simultaneously Enhanced Photovoltaic Parameters

Introducing a third component into organic bulk heterojunction solar cells has become an effective strategy to improve photovoltaic performance. Meanwhile, the rapid development of non-fullerene acceptors (NFAs) has pushed the power conversion efficiency (PCE) of organic solar cells (OSCs) to a higher standard. In this study, a series of fullerene-free ternary solar cells are fabricated based on a wide bandgap acceptor, IDTT-M, together with a wide bandgap donor polymer PM6 and a narrow bandgap NFA Y6. Insights from the morphological and electronic characterizations reveal that IDTT-M has been incorporated into Y6 domains without disrupting its molecular packing and sacrificing its electron mobility and work synergistically with Y6 to regulate the packing pattern of PM6, leading to enhanced hole mobility and suppressed recombination. IDTT-M further functions as an energy-level mediator that increases open-circuit voltage ( V OC ) in ternary devices. In addition, efficient Förster resonance energy transfer (FRET) between IDTT-M and Y6 provides a non-radiative pathway for facilitating exciton dissociation and charge collection. As a result, the optimized ternary device features a significantly improved PCE up to 16.63% with simultaneously enhanced short-circuit current ( J SC ), V OC , and fill factor (FF).

36 MATERIALS SCIENCE↗
DOE OSTI2021

Galvanic Transformation Dynamics in Heterostructured Nanoparticles

Corrosion is a significant problem for the stability of structural metals and potentially for functional nanomaterials in operating environments. When two metals with different electrochemical potentials form a junction, galvanic corrosion occurs, resulting in the sacrificial dissolution of the metal with a higher oxidation potential (lower electrode potential). In this report it is shown that bimetallic hetero-nanostructures composed of phase-segregated metals undergo galvanic corrosion in aqueous environments. Such selective etching of the sacrificial metal in heterojunction particles leads to the formation of unusual and kinetically stabilized half-spheroid particles. By using a fluid cell and in situ scanning transmission electron microscopy, a two-stage corrosion process can be observed where the Cu experiences a fractal breakdown before the Ag corrodes due to the lack of a protective oxide layer. However, when treated with a mild Ar plasma, the stability of these structures against corrosion is enhanced due to the conversion of the amorphous native oxide to a denser, thin layer of CuO on the Cu surface. Taken together, this work highlights the importance of considering the effects of galvanic corrosion on the stability of multicomponent nanoparticles, and it shows how mass transport in a nanoscale system is influenced by redox processes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Targeted Adjusting Molecular Arrangement in Organic Solar Cells via a Universal Solid Additive

The incorporation of solid additive has been considered as an effective strategy for developing organic photovoltaics with multi-components, which is independent of dynamics, playing unique roles in morphology adjustment. However, their complex working mechanisms involving specific chemical structures are selective to material systems, hence limiting their university and flexibility in application. Herein, an inert small-molecular compound naphtho[1,2-c:5,6-c′]bis[1,2,5]thiadiazole (NT) is introduced into the bulk-heterojunction blend as the solid additive, which can function with various material systems and solvents, depending on its simple π-conjugated structure and S⋯N interaction for adjusting molecular alignment. It is interesting to note that the introduced NT can not only improve device performance, but also simplify complicated pre- or post-processing methods, reduce impact from batch-to-batch differences, construct sufficient energy transfer channel as well as improve device stability. The resulting devices based on PTzBI-dF:Y6-BO system show an impressive power conversion efficiency of 17.4% with obviously enhanced T 80 lifetime of >1200 h. These findings provide useful guidelines for exploring potential universal solid additives benefitting toward commercial application.

36 MATERIALS SCIENCE↗