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218 records · Page 13

High average current HVDC electron gun for EIC hadron cooling

A critical R&D initiative for the Electron Ion Collider (EIC) involves the design of an electron gun capable of gen erating a high average current and high-brightness electron beam for the hadron cooler. This is essential to preserve hadron beam quality and achieve the collider’s luminosity target of 1 × 10 34 s −1 cm −2 . For an energy recovery linac (ERL)-based hadron cooler, the gun must deliver a high average current of 98.5 mA, a normalized transverse emittance of less than 2 mm−mrad, and a bunch charge of up to 2.5 nC. This proceeding outlines the high-voltage design of a DC gun operating at 500 kV, with conditioning capability up to 600 kV. The design incorporates several unique fea tures, including the use of inverted ceramic at this voltage level, active cooling for the cathode, and large single-crystal multi-alkali cathodes grown on a silicon carbide substrate. High-brightness electron sources are also pivotal for other ad vanced applications, such as high-intensity gamma sources, future 𝑒 + 𝑒 − colliders, and ultra-deep UV sources for the semiconductor industry. Additionally, this paper provides an overview of the hadron cooling approaches planned or proposed for the EIC.

43 PARTICLE ACCELERATORS↗

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage ( BV ) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Physics↗