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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13

All sources NASA NTRS DOE OSTI

NASA NTRS2005

Printed Antennas Made Reconfigurable by Use of MEMS Switches

A class of reconfigurable microwave antennas now undergoing development comprise fairly conventional printed-circuit feed elements and radiating patches integrated with novel switches containing actuators of the microelectromechanical systems (MEMS) type. In comparison with solid-state electronic control devices incorporated into some prior printed microwave antennas, the MEMS-based switches in these antennas impose lower insertion losses and consume less power. Because the radio-frequency responses of the MEMS switches are more nearly linear, they introduce less signal distortion. In addition, construction and operation are simplified because only a single DC bias line is needed to control each MEMS actuator.

Simons, Rainee N.↗

NASA NTRS1984

Magneto-optic garnet and liquid crystal optical switches

Magnetic stripe domain and liquid crystal devices are being developed and evaluated as fiber optic switches that can be utilized for nonblocking type nxm optical matrix switches in networking and optical processing. Liquid crystal switches are characterized by very low insertion loss and crosstalk, while stripe domain switches commutate in less than one microsecond. Both switches operate on multimode, randomly polarized fiber light with potentially large values for (n,m). The applications of these magnetic stripe domain and liquid crystal devices are discussed.

Krawczak, J. A.↗

NASA NTRS1994

Turbine-Driven Pipe-Cleaning Brush

Simple pipe-cleaning device includes small turbine wheel axially connected, by standoff, to circular brush. Turbine wheel turns on hub bearing attached to end of upstream cable. Turbine-and-brush assembly inserted in pipe with cable trailing upstream and brush facing downstream. Water or cleaning solution pumped through pipe. Cable held at upstream end, so it holds turbine and brush in pipe at location to be cleaned. Flow in pipe turns turbine, which turns wheel, producing desired cleaning action. In addition to brushing action, device provides even mixing of cleaning solution in pipe.

Werlink, Rudy J.↗

DOE OSTI2025

Atomic lift-off of epitaxial membranes for cooling-free infrared detection

Recent breakthroughs in ultrathin, single-crystalline, freestanding complex oxide systems have sparked industry interest in their potential for next-generation commercial devices. However, the mass production of these ultrathin complex oxide membranes has been hindered by the challenging requirement of inserting an artificial release layer between the epilayers and substrates. Here we introduce a technique that achieves atomic precision lift-off of ultrathin membranes without artificial release layers to facilitate the high-throughput production of scalable, ultrathin, freestanding perovskite systems. Leveraging both theoretical insights and empirical evidence, we have identified the pivotal role of lead in weakening the interface. This insight has led to the creation of a universal exfoliation strategy that enables the production of diverse ultrathin perovskite membranes less than 10 nm. Our pyroelectric membranes demonstrate a record-high pyroelectric coefficient of 1.76 × 10 −2 C m −2 K −1 , attributed to their exceptionally low thickness and freestanding nature. Moreover, this method offers an approach to manufacturing cooling-free detectors that can cover the full far-infrared spectrum, marking a notable advancement in detector technology.

nanoscale materials↗

NASA NTRS1966

Continuous magnetic flux pump

A method and means for altering the intensity of a magnetic field by transposing flux from one location to the location desired fro the magnetic field are examined. The device described includes a pair of communicating cavities formed in a block of superconducting material, is dimensioned to be insertable into one of the cavities and to substantially fill the cavity. Magnetic flux is first trapped in the cavities by establishing a magnetic field while the superconducting material is above the critical temperature at which it goes superconducting. Thereafter, the temperature of the material is reduced below the critical value, and then the exciting magnetic field may be removed. By varying the ratios of the areas of the two cavities, it is possible to produce a field having much greater flux density in the second, smaller cavity, into which the flux transposed.

Hildebrandt, A. F.↗

NASA NTRS2004

Long distance quantum communication using quantum error correction

We describe a quantum error correction scheme that can increase the effective absorption length of the communication channel. This device can play the role of a quantum transponder when placed in series, or a cyclic quantum memory when inserted in an optical loop.

quantum memory quantum repeater↗

DOE OSTI2020

Localized Flow Modification to Increase Power Capture of a Small-Scale Floating Undershot Waterwheel

The goal of the work described in this thesis is to design a flow augmentation device to increase the power capture and efficiency of a small-scale floating Under-Shot Water Wheel (USWW) currently being developed by Florida Atlantic University research funded by the U.S Department of Energy. The flow concentrator subsystem is intended to maximize the kinetic energy extracted by the marine hydrokinetic (MHK) energy collection device through modification of the local flow field across the capture plane. The primary objective is to increase the velocity and/or rate of mass inflow through the turbine through inserting a streamlined body in the region of interest. By utilizing the resulting flow field to increase hydraulic forcing on the waterwheel blades, the torque and/or RPM of the USWW can be increased. Based on experimental testing in the FAU wave tank at 1:5 prototype scale (280 mm wheel diameter) the flow concentrator was shown to produce an increase in device power coefficient of 17-55% measured over a velocity range of 0.16-0.45 m/s.

Hess, Sullivan↗

NASA NTRS1969

An electrical connector pin protector

Spring loaded insert protects electrical connector pins from being bent due to improper mating, or probing the pins with a screwdriver. This device modifies existing electrical connectors using only springs and retaining pins.

Mc Quillen, R. B.↗

NASA NTRS1983

Inflatable device for installing strain gage bridges

Methods and devices for installing in a tubular shaft multiple strain gages are disclosed with focus on a method and a device for pneumatically forcing strain gages into seated engagement with the internal surfaces of a tubular shaft in an installation of multiple strain gages in a tubular shaft. The strain gages or other electron devices are seated in a template-like component which is wrapped about a pneumatically expansible body. The component is inserted into a shaft and the body is pneumatically expanded after a suitable adhesive was applied to the surfaces.

Cook, C. E.↗

NASA NTRS1992

Shape-Memory Probe Grasps Small Objects

Shape-memory device removes foreign objects from ear canal, nose, or throat with little risk of damage to tissue. Thin, flexible wire inserted into cavity. Once positioned, it is made to bend into hook, tweezer, or other "remembered" grasping configuration by heating above critical temperature.

Angulo, Earl D.↗

NASA NTRS1991

Optically addressed asymmetric Fabry-Perot modulator

A low power, high contrast optically addressed modulator, operating with normal incidence, has been fabricated. Optically controlled reflection modulation is achieved through optically induced absorption modulation in a periodically delta-doped InGaAs/GaAs multiple quantum well structure inserted in an integrated asymmetric Fabry-Perot resonator. A contrast ratio over 60:1 was measured using a spectrally matched low power InGaAs/GaAs quantum well laser to generate the write (control) signal. The insertion loss for the normally off modulator is 4.6 dB at the highest write signal power (30 mW) used. The device lends itself to the fabrication of arrays for optically addressed spatial light modulation.

Larsson, A.↗

NASA NTRS1993

Silicon micromachined waveguides for millimeter-wave and submillimeter-wave frequencies

Rectangular waveguide is commonly used up to high millimeter-wave frequencies. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. The development of silicon micro-machining techniques to create silicon-based waveguide circuits, which can operate up to high submillimeter-wave frequencies, is reported. As a first step, WR-10 waveguide has been fabricated from (110) silicon wafers. Insertion loss measurements of gold plated silicon waveguide show performance comparable to standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems.

Mcgrath, William R.↗

NASA NTRS2008

RF MEMS Switches with SiC Microbridges for Improved Reliability

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

Scardelletti, Maximilian C.↗

NASA NTRS2017

Recent Radiation Test Results for Trench Power MOSFETs

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

Schottky Diodes↗

NASA NTRS2013

Nickel-Graphite Composite Compliant Interface and/or Hot Shoe Material

Next-generation high-temperature thermoelectric-power-generating devices will employ segmented architectures and will have to reliably withstand thermally induced mechanical stresses produced during component fabrication, device assembly, and operation. Thermoelectric materials have typically poor mechanical strength, exhibit brittle behavior, and possess a wide range of coefficient of thermal expansion (CTE) values. As a result, the direct bonding at elevated temperatures of these materials to each other to produce segmented leg components is difficult, and often results in localized microcracking at interfaces and mec hanical failure due to the stresses that arise from the CTE mismatch between the various materials. Even in the absence of full mechanical failure, degraded interfaces can lead to increased electrical and thermal resistances, which adversely impact conversion efficiency and power output. The proposed solution is the insertion of a mechanically compliant layer, with high electrical and thermal conductivity, between the low- and high-temperature segments to relieve thermomechanical stresses during device fabrication and operation. This composite material can be used as a stress-relieving layer between the thermoelectric segments and/or between a thermoelectric segment and a hot- or cold-side interconnect material. The material also can be used as a compliant hot shoe. Nickel-coated graphite powders were hot-pressed to form a nickel-graphite composite material. A freestanding thermoelectric segmented leg was fabricated by brazing the compliant pad layer between the high-temperature p- Zintl and low-temperature p-SKD TE segments using Cu-Ag braze foils. The segmented leg stack was heated in vacuum under a compressive load to achieve bonding. The novelty of the innovation is the use of composite material that re duces the thermomechanical stresses en - countered in the construction of high-efficiency, high-temperature therm - o-electric devices. The compliant pad enables the bonding of dissimilar thermoelectric materials while maintaining the desired electrical and thermal properties essential for efficient device operation. The modulus, CTE, electrical, and thermal conductances of the composite can be controlled by varying the ratio of nickel to graphite.

Firdosy, Samad A.↗

DOE OSTI2021

On the Equilibrium Electrostatic Potential and Light-Induced Charge Redistribution in Halide Perovskite Structures

Lead halide perovskites are semiconductor materials which are employed as nonintentionally doped absorbers inserted between two selective carrier transport layers (SCTL), realizing a p-i-n or n-i-p heterojunction. In our study, we have developed and investigated a lateral device, based on methylammonium lead iodide (MAPbI3) in which the p-i-n heterojunction develops in the horizontal direction. Our research suggests that the effective doping level in the MAPbI3 film should be very low, below 1012 cm-3. Along the vertical direction, this doping level is not enough to screen the electric field of the buried heterojunction with the SCTL. The perovskite work function is therefore affected by the work function of the SCTL underneath. From drift-diffusion simulations, we show that intrinsic perovskite-SCTL structures develop mV range surface photovoltages (SPVs) under continuous illumination. However, perovskite-SCTL structures can develop SPVs of hundreds of mV, as confirmed by our measurements. We therefore analyzed the compatibility between low doping and low defect densities in the perovskite layer and such high SPV values using numerical modeling. It is shown that these high SPV values could originate from electronic processes due to large band offsets in the buried perovskite-SCTL heterojunctions, or at the SCTL-transparent conductive oxide (TCO) buried heterojunction. However, such electronic processes can hardly explain the long SPV persistence after switching off the illumination.

defects↗

DOE OSTI2022

KokkACC: Enhancing Kokkos with OpenACC

Template metaprogramming is gaining popularity as a high-level solution for achieving performance portability on heterogeneous computing resources. Kokkos is a representative approach that offers programmers high-level abstractions for generic programming while most of the device-specific code generation and optimizations are delegated to the compiler through template specializations. For this, Kokkos provides a set of device-specific code specializations in multiple back ends, such as CUDA and HIP. Unlike CUDA or HIP, OpenACC is a high-level and directive-based programming model. This descriptive model allows developers to insert hints (pragmas) into their code that help the compiler to parallelize the code. The compiler is responsible for the transformation of the code, which is completely transparent to the programmer. This paper presents an OpenACC back end for Kokkos: KokkACC. As an alternative to Kokkos’s existing device-specific back ends, KokkACC is a multi-architecture back end providing a high-productivity programming environment enabled by OpenACC’s high-level and descriptive programming model. Moreover, we have observed competitive performance; in some cases, KokkACC is faster (up to 9×) than NVIDIA’s CUDA back end and much faster than OpenMP’s GPU offloading back end. This work also includes implementation details and a detailed performance study conducted with a set of mini-benchmarks (AXPY and DOT product) and three mini-apps (LULESH, miniFE and SNAP, a LAMMPS proxy mini-app).

Valero Lara, Pedro↗

NASA NTRS2005

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Qiu, Yueming↗