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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Metallization for Yb14MnSb11-Based Thermoelectric Materials

Thermoelectric materials provide a means for converting heat into electrical power using a fully solid-state device. Power-generating devices (which include individual couples as well as multicouple modules) require the use of ntype and p-type thermoelectric materials, typically comprising highly doped narrow band-gap semiconductors which are connected to a heat collector and electrodes. To achieve greater device efficiency and greater specific power will require using new thermoelectric materials, in more complex combinations. One such material is the p-type compound semiconductor Yb14MnSb11 (YMS), which has been demonstrated to have one of the highest ZT values at 1,000 C, the desired operational temperature of many space-based radioisotope thermoelectric generators (RTGs). Despite the favorable attributes of the bulk YMS material, it must ultimately be incorporated into a power-generating device using a suitable joining technology. Typically, processes such as diffusion bonding and/or brazing are used to join thermoelectric materials to the heat collector and electrodes, with the goal of providing a stable, ohmic contact with high thermal conductivity at the required operating temperature. Since YMS is an inorganic compound featuring chemical bonds with a mixture of covalent and ionic character, simple metallurgical diffusion bonding is difficult to implement. Furthermore, the Sb within YMS readily reacts with most metals to form antimonide compounds with a wide range of stoichiometries. Although choosing metals that react to form high-melting-point antimonides could be employed to form a stable reaction bond, it is difficult to limit the reactivity of Sb in YMS such that the electrode is not completely consumed at an operating temperature of 1,000 C. Previous attempts to form suitable metallization layers resulted in poor bonding, complete consumption of the metallization layer or fracture within the YMS thermoelement (or leg).

Firdosy, Samad↗
DOE OSTI2018

Photoinduced metastable state with modulated Josephson coupling strengths in Pr 0.88 LaCe 0.12 CuO 4

We report an intense near-infrared pump, c-axis terahertz probe measurement on an electron-doped cuprate superconductor Pr 0.88 LaCe 0.12 CuO 4 with T c = 22 K. The major effect of the intense pump is to induce a splitting of Josephson plasma edge below Tc, similar to the observation on hole-doped cuprate La 1.905 Ba 0.095 CuO 4 in a superconducting state. The photoexcitation induced spectral change does not exhibit significant decay up to the longest measured time delay 210 ps. Furthermore, the result suggests that the intense near-infrared pump drives the system from a superconducting state with a uniform Josephson coupling to a metastable superconducting phase with modulated Josephson coupling strengths below T c .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1992

Comparison of direct detection 50 Mbps Q-PPM receiver performance for AlGaAs and Nd doped laser transmitters

We present a theoretical and experimental performance comparison of a free space direct detection 50 Mbps quaternary pulse position modulation (Q-PPM) communications receiver for Nd:YAG and AlGaAs laser transmitters. Using silicon avalanche photodiodes (APD), we achieved a receiver sensitivity of 2.6 nW (264 incident photons/bit) at 1060 nm and 0.77 nW (59 incident photons/bit) at 810 nm (bit error rate (BER) of 10 exp -6). This is the best sensitivity ever reported for a direct detection receiver at 1060 nm. The experimental results were in good agreement with theoretical predictions.

Unger, G. L.↗
DOE OSTI2023

Subsurface spectroscopy of heterogeneous materials using optical wavefront shaping

Plastic-bonded explosives and propellants consist of energetic molecular crystals embedded in a polymer matrix that also includes additives, such as taggants, plasticizers, grit, antioxidants, etc. Furthermore, this heterogeneous composition renders these materials optically opaque, limiting optical characterization techniques (e.g., Raman spectroscopy) to probing chemical reactions at the sur-face. However, many reactions of interest are believed to occur inside the material where current optical techniques can not probe. To address this challenge, we have developed a new optical technique that utilizes feedback assisted wavefront shaping (using spatial light modulators) to focus probe light inside a heterogeneous material, such that we can perform subsurface spectroscopy. Recently, we demonstrated this technique by monitoring subsurface photodegradation and thermal degradation of Eu-doped molecular crystals using both fluorescence and Raman spectroscopy. Based off these successes we are now looking into improvements to this technique to allow for greater time resolution, including replacing our spatial light modulators with fast digital mirror devices, using ns optical phase conjugation, and self-healing optical beams.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1992

Generation of sub-100-fs pulses from a CW mode-locked chromium-doped forsterite laser

Generation of femtosecond pulses from a continuous-wave mode-locked chromium-doped forsterite laser is reported. The forsterite laser was actively mode locked by using an acoustooptic modulator operating at 78 MHz with two Brewster high-dispersion glass prisms for intracavity chirp compensation. Transform-limited sub-100-fs pulses were routinely generated in the TEM(00) mode with 85 mW of continuous power (with 1 percent output coupler), tunable over 1230-1280 nm. The shortest pulses measured had a 60-fs pulse width.

Seas, A.↗
NASA NTRS1979

Bandgap narrowing in moderately to heavily doped silicon

A theoretical model of bandgap narrowing in silicon at high doping levels has been developed. The model takes into account the electrostatic energy of interaction between a minority carrier and the majority carriers surrounding it, which reduces the thermal energy necessary for creation of an electron-hole pair. A pair energy similar to the excitonic binding energy of bound electron-hole pairs in insulators is obtained. Theoretical results are in excellent agreement with experimental results in the doping range from 3 times 10 to the 17th to 1.5 times 10 to the 20th/cu cm at room temperature. These results indicate that at high injection levels such as a transistor biased into the conductivity-modulation regime or a solar cell whose surface is established by ion implantation into an oxide layer, the bandgap narrowing is determined by the injected carrier concentration rather than by the doping level.

Lanyon, H. P. D.↗
DOE OSTI2022

Titanium doped kagome superconductor CsV 3–x Ti x Sb 5 and two distinct phases

The vanadium-based kagome superconductor CsV 3 Sb 5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity. The origins of CDWs, unconventional superconductivity, and their correlation with different electronic states in this kagome system are of great significance, but so far, are still under debate. Chemical doping in the kagome layer provides one of the most direct ways to reveal the intrinsic physics, but remains unexplored. Here, we report, for the first time, the synthesis of Ti-substituted CsV 3 Sb 5 single crystals and its rich phase diagram mapping the evolution of intertwining electronic states. The Ti atoms directly substitute for V in the kagome layers. CsV 3–x Ti x Sb 5 shows two distinct superconductivity phases upon substitution. The Ti slightly-substituted phase displays an unconventional V-shaped superconductivity gap, coexisting with weakening CDW, PDW, AHE, and nematicity. The Ti highly-substituted phase has a U-shaped superconductivity gap concomitant with a short-range rotation symmetry breaking CDW, while long-range CDW, twofold symmetry of in-plane resistivity, AHE, and PDW are absent. Furthermore, we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb, showing a different modulation on the superconductivity phases and CDWs. These findings open up a way to synthesise a new family of doped CsV 3 Sb 5 materials, and further represent a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Radical Polymer-Based Organic Electrochemical Transistors

Organic electrochemical transistors (OECTs) are an emerging platform for bioelectronic applications. Significant effort has been placed in designing advanced polymers that simultaneously transport both charge and ions (i.e., macromolecules that are mixed conductors). Furthermore, the considerations for mixed organic conductors are often different from the established principles that are well-known in the solid-state organic electronics field; thus, the discovery of new OECT macromolecular systems is highly desired. Here, we demonstrate a new materials system by blending a radical polymer (i.e., a macromolecule with a nonconjugated backbone and with stable open-shell sites at its pendant group) with a frequently used conjugated polymer. Specifically, poly(4-glycidyloxy-2,2,6,6-tetramethylpiperidine-1-oxyl) (PTEO) was blended with poly(3-hexylthiophene) (P 3 HT) to create thin films with distinct closed-shell and open-shell domains. Importantly, the sharp and unique oxidation–reduction (redox) potential associated with the radical moieties of the PTEO chain provided a distinct actuation feature to the blended films that modulated the ionic transport of the OECT devices. In turn, this led to controlled regulation of the doping of the P 3 HT phase in the composite film. By decoupling the ionic and electronic transport into two distinct phases and by using an ion transport phase with well-controlled redox activity, never-before-seen performance for a P3HT-based OECT was observed. That is, at loadings as low as 5% PTEO (by weight) OECTs achieved figure-of-merit (i.e., μC*) values >150 F V –1 cm –1 s –1 , which place the performance on the same order as state-of-the-art conjugated polymers despite the relatively common conjugated macromolecular moiety implemented. As such, this effort presents a design platform by which to readily create a tailored OECT response through strategic macromolecular selection and polymer processing.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Low-energy phonons in Bi 2 Sr 2 CaCu 2 O 8 + δ and their possible interaction with electrons measured by inelastic neutron scattering

Electron-phonon interaction in copper oxide superconductors is still enigmatic. Strong coupling for certain optic phonons is now well established experimentally, but theoretical understanding is challenging. Scattering of electrons near the Fermi surface by the longitudinal acoustic (LA) phonons is expected from basic theory because these phonons modulate electron density. We used inelastic neutron scattering on a large single crystal sample of optimally-doped Bi 2 Sr 2 CaCu 2 O 8+δ to show that low-energy LA phonons could couple to electronic density fluctuations only at small phonon wavevectors, which naturally limits any interaction to forward scattering. Such scattering should not be pairbreaking in the case of the d-wave gap. We also found that previously reported low energy phonon spectral weight half-way to the zone boundary is consistent with conventional lattice dynamics and does not reflect incipient charge density wave (CDW).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1977

Far infrared observations of IRC + 10216

Results are reported for measurements of IRC + 10216 at 100 microns made with the 91-cm telescope of NASA's Kuiper Airborne Infrared Observatory. The IR photometer employed consisted of a gallium-doped germanium photoconductive detector with a MOSFET preamplifier and load resistor. Signals obtained from the source at modulation frequencies of 30 and 100 Hz are plotted, and the 100-micron flux measurements are shown to be in agreement with previous bolometric measurements. It is noted that the sensitivity of the photoconductive detection system is comparable to that of the conventional bolometers that have been used in airborne IR observations.

Shivanandan, K.↗
NASA NTRS2002

Holographic Gratings for Optical Processing

Investigation of astronomical objects and tracking of man-made space objects lead to generation of huge amount of information for optical processing. Traditional big-size optical elements (such as optical telescopes) have a tendency for increasing aperture size in order to improve sensitivity. This tendency leads to increasing of weight and costs of optical systems and stimulate search for the new, more adequate technologies. One approach to meet these demands is based on developing of holographic optical elements using new polymeric materials. We have investigated possibility to use new material PQ-PMMA (phenantrenequinone-doped PMMA (Polymethyl Methacrylate)) for fabrication of highly selective optical filters and fast spatial-temporal light modulators. This material was originally developed in Russia and later was tested in CalTech as a candidate material for optical storage. Our theoretical investigation predicts the possibility of realization of fast spatial and temporal light modulation, using volume reflection-type spectral filter. We have developed also model of holographic-grating recording in PQ-PMMA material, based on diffusional amplification. This mechanism of recording allow to receive high diffraction efficiency during recording of reflection-type volume holographic grating (holographic mirror). We also investigated recording of dynamic gratings in the photorefractive crystals LiNbO3 (LN) for space-based spectroscopy and for adaptive correction of aberrations in the telescope's mirrors. We have shown, that specific 'photogalvanic' mechanism of holographic grating recording in LN allow to realize recording of blazed gratings for volume and surface gratings. Possible applications of dynamic gratings in LN for amplification of images, transmitted through an imaging fiber guide was also demonstrated.

Nickolai Kukhtarev↗
DOE OSTI2019

Superconductivity in the doped Hubbard model and its interplay with next-nearest hopping t ′

The Hubbard model is widely believed to contain the essential ingredients of high-temperature superconductivity. However, proving definitively that the model supports superconductivity is challenging. Here, we report a large-scale density matrix renormalization group study of the lightly doped Hubbard model on four-leg cylinders at hole doping concentration δ = 12.5%. We reveal a delicate interplay between superconductivity and charge density wave and spin density wave orders tunable via next-nearest neighbor hopping t ′. For finite t ′, the ground state is consistent with a Luther-Emery liquid with power-law superconducting and charge density wave correlations associated with half-filled charge stripes. In contrast, for t ′ = 0, superconducting correlations fall off exponentially, whereas charge density and spin density modulations are dominant. Our results indicate that a route to robust long-range superconductivity involves destabilizing insulating charge stripes in the doped Hubbard model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Xenon doping of Liquid Argon in ProtoDUNE Single Phase: first results

Doping Liquid Argon (LAr) with xenon is a known technique to shift the light emitted by argon (128 nm) to a longer wavelength to ease its detection. The largest Xenon doping test ever performed in a LArTPC was carried out in ProtoDUNE Single Phase (ProtoDUNE-SP) at the CERN Neutrino Platform. The response of such a large TPC (7701 of Liquid Argon and 4401 of fiducial mass) has been studied using the ProtoDUNE Photon Detection System (PDS) and a dedicated setup installed before the run. With the first, it was possible to study the light detected in the system as a function of the xenon concentration and to characterise the light collection efficiency with respect to the track position. With the second system it was possible to disentangle the LAr (128 nm) light from the xenon (178 nm) light using two dedicated X-ARAPUCA modules. The run was fully satisfactory, it was possible to measure directly the increase of the xenon light component during doping; furthermore most of the LAr light quenched by impurities was fully recovered even at small Xenon concentration (< 20 ppm in mass). A study of the collected scintillation light as a function of the track position showed an improvement of the detector response uniformity.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Tuning 2D magnetism in Fe 3+X GeTe 2 films by element doping

Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (T C ) or phase transitions. One of the challenges, however, is the realization of high T C 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe 3+X GeTe 2 films with T C above room temperature. By controlling the Fe composition in Fe 3+X GeTe 2 , a continuously modulated T C in a broad range of 185–320 K has been achieved. This widely tunable T C is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe 3+X GeTe 2 fashion.

2D ferromagnetic material↗
NASA NTRS1988

Monolithic electro-optic modulator array

A PIN GaAlAs diode structure is provided with parameters for index guiding of light in a single mode. The index of refraction of the central layer I (which in practice may be lightly doped .pi. or .nu.) is greater than the p- and n-layers to create a slab waveguide in the transverse direction. Stripe contacts define separate waveguide channels that are separated electrically and optically by implanting protons or etching grooves between the stripe contacts in the upper layer. Separate reverse biasing voltages may be applied to the stripe contacts for modulation of the light in proportions to the voltage, either with absorption modulation, if the light wavelength is within about 500.ANG. of the bandgap of the .pi.-material, or phase-delay modulation, if the wavelength is separated from the bandgap of the .pi.-material by at least 900.ANG..

Robinson, Deborah L.↗
DOE OSTI2018

Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping

Abstract Thin film materials for photovoltaics such as cadmium telluride (CdTe), copper-indium diselenide-based chalcopyrites (CIGS), and lead iodide-based perovskites offer the potential of lower solar module capital costs and improved performance to microcrystalline silicon. However, for decades understanding and controlling hole and electron concentration in these polycrystalline films has been extremely challenging and limiting. Ionic bonding between constituent atoms often leads to tenacious intrinsic compensating defect chemistries that are difficult to control. Device modeling indicates that increasing CdTe hole density while retaining carrier lifetimes of several nanoseconds can increase solar cell efficiency to 25%. This paper describes in-situ Sb, As, and P doping and post-growth annealing that increases hole density from historic 10 14 limits to 10 16 –10 17 cm −3 levels without compromising lifetime in thin polycrystalline CdTe films, which opens paths to advance solar performance and achieve costs below conventional electricity sources.

14 SOLAR ENERGY↗
DOE OSTI2024

Heteroatom anchoring to enhance electrochemical reversibility for high-voltage P2-type oxide cathodes of sodium-ion batteries

P2-type cathode has received extensive attention due to its faster Na+ diffusion and a high theoretical capacity in sodium-ion batteries (SIBs). However, undesirable phase transformations have induced dramatic capacity decay of SIBs during the cycling process. In this study, heteroatom anchoring through Cu/Mg dual doping is introduced into P2-type Na 0.67 Ni 0.33 Mn 0.67 O 2 cathode to enhance high-voltage electrochemical reversibility and modulate interfacial Na + kinetics. Further, the as-prepared Na 0.67 Ni 0.23 Mg 0.05 Cu 0.05 Mn 0.67 O 2 exhibits an outstanding capacity retention (83.4% after 2000 cycles at 10C) and rate performance (73 mAh g -1 at 10C, accounting for 58.7% of that at 0.1 C) over the voltage range of 2.5–4.4 V. Intensive explorations further manifest that the modified mechanism of dual-ion doping strategy is attributed to the synergistic coupling effect of a substantial change in Na occupancy distribution and an increase in oxygen vacancy buffer. Thus, the optimized cathode expedites Na + diffusion and reduces detrimental phase transformation, which favors high-rate performance and long-term cycling stability. This study develops a route to rationally design high-voltage cathode materials for SIBs.

25 ENERGY STORAGE↗
DOE OSTI2019

A Two-Dimensional MoS 2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)

A variety of methods including tuning chemical compositions, structures, crystallinity, defects and strain, and electrochemical intercalation have been demonstrated to enhance the catalytic activity. However, none of these tuning methods provide direct dynamical control during catalytic reactions. Here we propose a new method to tune the activity of catalysts through solid-state ion gating manipulation and adjustment (SIGMA) using a catalysis transistor. SIGMA can electrostatically dope the surface of catalysts with a high electron concentration over 5 × 10 13 cm –2 and thus modulate both the chemical potential of the reaction intermediates and their electrical conductivity. The hydrogen evolution reaction (HER) on both pristine and defective MoS 2 were investigated as model reactions. Furthermore, our theoretical and experimental results show that the overpotential at 10 mA/cm 2 and Tafel slope can be in situ, continuously, dynamically, and reversibly tuned over 100 mV and around 100 mV/dec, respectively.

36 MATERIALS SCIENCE↗