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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion

The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.

Faur, M.↗
NASA NTRS1983

Improved fabrication techniques for infrared bolometers

Techniques are described for producing improved infrared bolometers from doped germanium. Ion implantation and sputter metalization have been used to make ohmic electrical contacts to Ge:Ga chips. This method results in a high yield of small monolithic bolometers with very little low-frequency noise. When one of these chips is used as the thermometric element of a composite bolometer, it must be bonded to a dielectric substrate. The thermal resistance of the conventional epoxy bond has been measured and found to be undesirably large. A procedure for soldering the chip to a metalized portion of the substrate is described which reduced this resistance. The contribution of the metal film absorber to the heat capacity of a composite bolometer has been measured. The heat capacity of a NiCr absorber at 1.3 K can dominate the bolometer performance. A Bi absorber has significantly lower heat capacity. A low temperature blackbody calibrator has been built to measure the optical responsivity of bolometers. A composite bolometer system with a throughput of approx. 0.1 sr sq cm was constructed using the new techniques. In negligible background it has an optical NEP of 3.6 10((exp -15) W/sq root of Hz at 1.0 K with a time constant of 20 ms. The noise in this bolometer is white above 2.5 Hz and is somewhat below the value predicted by thermodynamic equilibrium theory. It is in agreement with calculations based on a recent nonequilibrium theory.

Lange, A. E.↗
NASA NTRS2014

High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

Pressure Sensors↗
NASA NTRS2014

Demonstration of SiC Pressure Sensors at 750 C

We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

Semiconductor↗
NASA NTRS1979

Development of economical improved thick film solar cell contact

Materials were surveyed to provide candidates for an all metal electrode paste system. These consisted of a major constituent metal powder, a low melting metal powder suitable for a liquid phase sintering medium, and a powder material suitable as an etchant for silicon dioxide at sintering temperatures. By means of thermal gravimetric analysis a suitable binder was identified for low temperature fired inks. The all metal ink concept was first demonstrated with the silver system to avoid the problems of limited process windows encountered with base metal systems. A number of solid materials capable of selectively etching silicon dioxide at modest temperatures were identified. A paste with silver fluoride was screened onto N-type silicon with 5 ohm cm resistivity. The resulting contact pads had excellent adhesion but were not electrically ohmic. Metallurgically, these contacts have equal or better grain structure as commercial inks fired at the same temperatures.

Ross, B.↗
DOE OSTI2022

Titanium Carbide MXene Hole Contacts for CdTe Photovoltaics

CdTe is a high‐efficiency thin‐film photovoltaic technology that has seen tremendous commercial success over the past decade. Yet despite the improvement of other device characteristics, the fabrication of an ohmic hole back contact layer has remained a challenge due to the high ionization potential of CdTe, which limits the external potential that can be feasibly reached even as other characteristics of the device improve. MXenes, a family of 2D materials with rapidly growing scientific and commercial interest, offer a promising route to forming low‐cost, low‐barrier contacts due to their demonstrated high work function, metallic conductivity, and facile solution processing from benign solvents. Here, it is shown that Ti 3 C 2 T x MXene films processed from an aqueous colloidal dispersion can perform as a highly efficient hole contact material for CdTe solar cells, resulting in high power‐conversion efficiencies. The role of the Schottky barrier formation in Ti 3 C 2 T x ‐contacted CdTe devices is probed, and potential pathways for the future development of this potent combination of materials are elucidated. The modularity of the expansive MXene family of materials presents a promising strategy for developing next‐generation hole contacts for CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Measurement of Resistance, Porosity, and Water Contact Angle of Porous Transport Layers for Low-Temperature Electrolysis Technologies

The porous transport layer is an important component of low-temperature electrolysis devices, such as proton exchange membrane water electrolyzers or anion exchange membrane water electrolyzers. PTLs have significant influence on the cell performance as their bulk resistance can impact the ohmic resistance, their contact resistance can impact electrode performance, and their structure can impact the liquid flow to the cell, which could cause mass-transport losses. In order to improve cell performance, optimization of the PTL is critical. Standardized protocols should be utilized to adequately compare PTLs being developed from different institutions. This method will detail a standardized protocol for measuring the resistance of the PTL using a four-wire setup and will also detail a process for measuring the porosity and water contact angle of the PTL using capillary flow porometry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Humidity resistant solar cell contacts

Gold-platinum solar cell contact is developed which does not exhibit chemical reactivity of titanium or porosity of silver. This contact offers excellent ohmic characteristics and stability in humid air.

Bishop, C. J.↗
NASA NTRS1985

Determination of the Si-conducting polymer interfacial properties using A-C impedance techniques

A study was made of the interfacial properties of poly(pyrrole) (PP) deposited electrochemically onto single crystal p-Si surfaces. The interfacial properties are dependent upon the counterions. The formation of 'quasi-ohmic' and 'nonohmic' contacts, respectively, of PP(ClO4) and PP films doped with other counterions (BF4 and para-toluene sulfonate) with p-Si, are explained in terms of the conductivity of these films and the flat band potential, V(fb), of PP relative to that of p-Si. The PP film seems to passivate or block intrinsic surface states present on the p-Si surface. The differences in the impedance behavior of para-toluene sulfonate doped and ClO4 doped PP are compared.

Nagasubramanian, G.↗
DOE OSTI2025

Effect of cell compression on the performance and the structure of proton exchange membrane water electrolyzer (PEMWE) assembly

Here, in the field of water electrolysis, the proton exchange membrane water electrolyzer (PEMWE) is currently the most advanced technology for producing hydrogen without emitting CO 2 . Although PEMWE plants are already in operation, further research is needed to improve cell efficiency and reduce the use of rare materials, such as iridium oxide catalysts for the oxygen evolution reaction (OER). One of the main causes of performance loss in PEMWE is the relatively low electric conductivity of the porous transport layer (PTL) and of the anode catalyst layer, which results in ohmic losses and low catalyst utilization during high current density operation. The objective of this study is to investigate how optimization of the PTL and electrode interface can increase the cell performance. To this end, we tested different cell assemblies using fibrous and sintered PTLs, decreasing membrane thickness, reducing iridium loading, and inserting a microporous layer to increase contact surface area. Electrochemical characterization of each cell configuration was systematically performed at various compression levels as the pressure is a crucial parameter influencing the electrode/PTL contact area. In parallel, X-ray microcomputed tomography (micro-CT) was employed to investigate the effects of cell hydration and compression on the structure of PEMWE components. This study combining electrochemistry and micro-CT imaging presents how optimizing the electrode/PTL contact surface area, minimizes ohmic losses, and enables PEMWE operation with low iridium loading at high current densities.

Catalyst - PTL interface↗
DOE OSTI2026

Hybrid Ionomer-Free Porous Transport Electrodes With Catalyst Coated Membranes for Enhanced Water Electrolysis

To promote industrial uptake of clean hydrogen production technologies such as polymer electrolyte membrane (PEM) water electrolyzers, advancements in catalyst layer (CL) morphology are required. We demonstrate how improved electrochemical performance can be achieved when using an ionomer free porous transport electrode (PTE) coupled with a traditional catalyst coated membrane (CCM) assembly in PEM water electrolyzers. Notably, we reveal that the superior performance achieved when utilizing a hybrid PTE and CCM assembly is due to enhanced ohmic performance caused by optimal contact with both the porous transport layer (PTL) and PEM interfaces. Using operando neutron radiography, we demonstrate that configurations utilizing a CCM resulted in more rapid water replenishment to reaction sites, indicating enhanced membrane hydration beneficial for performance. This enhanced membrane hydration coupled with improved contact area at the PEM-catalyst layer (CL) and PTL-CL interfaces was revealed through the reduced ohmic overpotentials of the hybrid PTE-CCM design, which achieved the lowest ohmic overpotential of 431 mV at 2000 mA cm−2. While the average in-plane water distributions are generally similar between cell configurations, we reveal that utilizing a PTE configuration promotes a more homogenous water distribution near the CL-membrane interface due to enhanced catalyst utilization.

Seip, Tess [ORNL] (ORCID:0000000232740594)↗
DOE OSTI2025

Integration of hydrophobic gas diffusion layers for zero-gap electrolyzers to enable highly energy-efficient CO 2 electrolysis to C 2 products

Electrochemical CO 2 reduction (eCO2R) is an attractive route for mitigating global CO 2 emissions while producing value-added chemicals. Ethylene is one product of eCO2R and is an essential industrial precursor with a global market of $230 billion. The large-scale implementation of C 2 H 4 -selective CO 2 electrolyzers remains challenging because of low energy efficiencies. In this work, we develop the design principles necessary for incorporating an expanded polytetrafluoroethylene (ePTFE) electrode into a zero-gap electrolyzer while simultaneously developing an integrated electrical front contact that reduces the ohmic resistances inherent to electrically insulating gas diffusion layers. By co-designing the catalyst layer, gas diffusion medium, and operating conditions for a zero-gap ePTFE gas diffusion electrode (GDE), we achieved a full-cell voltage of 2.5 V at 200 mA cm −2 at 25 cm 2 geometric area cell with Faradaic efficiencies of 48% for ethylene and 40% for ethanol. This work highlights strategies for developing a scalable, stable, and highly energy-efficient eCO2R for C 2 products.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1989

Gallium arsenide processing for gate array logic

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Cole, Eric D.↗
NASA NTRS1996

AlGaN Channel Transistors for Power Management and Distribution

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

ENERGY MANAGEMENT↗
NASA NTRS2001

Study of Electrical Contacts and Devices in Advanced Semiconductors

Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Hall, H. P.↗
DOE OSTI2023

Lowering the operating temperature of protonic ceramic electrochemical cells to <450 °C

Protonic ceramic electrochemical cells (PCECs) can be employed for power generation and sustainable hydrogen production. Lowering the PCEC operating temperature can facilitate its scale-up and commercialization. However, achieving high energy efficiency and long-term durability at low operating temperatures is a long-standing challenge. Here, in this work, we report a simple and scalable approach for fabricating ultrathin, chemically homogeneous, and robust proton-conducting electrolytes and demonstrate an in situ formed composite positive electrode, Ba 0.62 Sr 0.38 CoO 3–δ –Pr 1.44 Ba 0.11 Sr 0.45 Co 1.32 Fe 0.68 O 6–δ , which significantly reduces ohmic resistance, positive electrode–electrolyte contact resistance and electrode polarization resistance. The PCECs attain high power densities in fuel-cell mode (~0.75 W cm –2 at 450 °C and ~0.10 W cm –2 at 275 °C) and exceptional current densities in steam electrolysis mode (–1.28 A cm –2 at 1.4 V and 450 °C). At 600 °C, the PCECs achieve a power density of ~2 W cm –2 . Additionally, we demonstrate the direct utilization of methane and ammonia for power generation at <450 °C. Our PCECs are also stable for power generation and hydrogen production at 400 °C.

25 ENERGY STORAGE↗
DOE OSTI2025

Bipolar transport in diamond under photo-excitation: Evidence of free charge scattering by excitons

The fundamental characteristics of the Coulomb e-h interactions in ultra-pure diamond are investigated through time-resolved photoconductivity measurements in homogeneously photoexcited samples with ohmic-like low resistive B + sandwich contacts. Here, we demonstrate that, in the electric field, the bipolar charge mobility exhibits drastic reduction for photo-injected densities of 10 14 ‐10 16 cm ‐3 that cannot be explained only by mutual scattering between free e-h particles. This phenomenon is clarified by adding scattering caused by excitons whose density grows in the photo-exited system. The comparison of drift mobilities at 300 K in diamond obtained in this study and in pure Si and Ge obtained from literature, where exciton scattering is insignificant, is presented. We derive the empirical expression for the density dependences of bipolar mobility for the electric fields up to 1 kV/cm that could be useful for the development of diamond electronic devices.

Bipolar drift↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗