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DOE OSTI2022

Sensitivity and Detection Limit of Spectroscopic-Grade Perovskite CsPbBr 3 Crystal for Hard X-Ray Detection

We report spectroscopic-grade single crystal detectors can register the energies of individual X-ray interactions enabling photon-counting systems with superior resolution over traditional photoconductive X-ray detection systems. Current technical challenges have limited the preparation of perovskite semiconductors for energy-discrimination X-ray photon-counting detection. Here, this work reports the deployment of a spectroscopic-grade CsPbBr 3 Schottky detector under reverse bias for continuum hard X-ray detection in both the photocurrent and spectroscopic schemes. High surface barriers of approximate to ≈ 1 eV are formed by depositing solid bismuth and gold contacts. The spectroscopic response under a hard X-ray source is assessed in resolving the characteristic X-ray peak. The methodology in enhancing X-ray sensitivity by controlling the X-ray energies and flux, and voltage, is described. The X-ray sensitivity varies between a few tens to over 8000 μC Gy air -1 cm -2 . The detectable dose rate of the CsPbBr 3 detectors is as low as 0.02 nGy air s -1 in the energy discrimination configuration. Finally, the unbiased CsPbBr 3 device forms a spontaneous contact potential difference of about 0.7 V enabling high quality of the CsPbBr 3 single crystals to operate in "passive" self-powered X-ray detection mode and the X-ray sensitivity is estimated as 14 μC Gy air -1 cm -2 . The great potential of spectroscopic-grade CsPbBr 3 devices for X-ray photon-counting systems is anticipated in this work.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Improved Contacts for Tandem Cells with Enhanced Effciency Grown by D-HVPE

Dynamic hydride vapor phase epitaxy (D-HVPE) has provided a potential route towards lower cost material growth of III-V photovoltaic devices. A highly doped Ga0.5In0.5P emitter layer is grown in attempt to force passivation at the front of the cell to account for the absence of a suitable window layer in our reactor. Control over dopant diffusion in these materials is thus critical to achieving high-efficiency device performance. Here, we institute a two-step contact layer design that boosts tandem cell efficiencies by minimizing Se diffusion into the underlying emitter layer while still providing sufficiently low contact resistance. Short-circuit current in these devices improves to 8.9 mA/cm2 in an uncoated GaInP/GaAs cell, an improvement of 1.2 mA/cm2 over our previous best cell. Conversion efficiency with the new contact doping scheme is projected to be ~27% with the inclusion of a standard ARC layer.

27 ARPA - Advanced Research Projects Agency-Energy↗

DOE OSTI2020

Highly Efficient and Stable Perovskite Solar Cells Enabled by Low‐Cost Industrial Organic Pigment Coating

Abstract Surface passivation of perovskite solar cells (PSCs) using a low‐cost industrial organic pigment quinacridone (QA) is presented. The procedure involves solution processing a soluble derivative of QA, N , N ‐bis(tert‐butyloxycarbonyl)‐quinacridone (TBOC‐QA), followed by thermal annealing to convert TBOC‐QA into insoluble QA. With halide perovskite thin films coated by QA, PSCs based on methylammonium lead iodide (MAPbI 3 ) showed significantly improved performance with remarkable stability. A PCE of 21.1 % was achieved, which is much higher than 18.9 % recorded for the unmodified devices. The QA coating with exceptional insolubility and hydrophobicity also led to greatly enhanced contact angle from 35.6° for the pristine MAPbI 3 thin films to 77.2° for QA coated MAPbI 3 thin films. The stability of QA passivated MAPbI 3 perovskite thin films and PSCs were significantly enhanced, retaining about 90 % of the initial efficiencies after more than 1000 hours storage under ambient conditions.

He, Qingquan↗

DOE OSTI2020

Highly Efficient and Stable Perovskite Solar Cells Enabled by Low‐Cost Industrial Organic Pigment Coating

He, Qingquan↗

DOE OSTI2020

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 10 9 and 6 × 10 3 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗

DOE OSTI2020

Passive millimeter wave radiometer system for calibration of infrared cameras

An apparatus for accurate measurement of surface and sub-surface temperatures of an object from a distance without contacting the object is provided. Illustrative embodiments provide for simultaneous measurement of thermal emission and emissivity in the mm-wave regime thereby enabling real-time non-contact measurement of emissivity. Corrected temperatures for the object which may be used for calibration of infrared thermographic cameras are determined from the measurement of emissivity.

Murphy, Ryan D.↗

DOE OSTI2021

In-Home Mobility Frequency and Stability in Older Adults Living Alone With or Without MCI: Introduction of New Metrics

Background: Older adults spend a considerable amount of time inside their residences; however, most research investigates out-of-home mobility and its health correlates. We measured indoor mobility using room-to-room transitions, tested their psychometric properties, and correlated indoor mobility with cognitive and functional status. Materials and Methods: Community-dwelling older adults living alone ( n = 139; age = 78.1 ± 8.6 years) from the Oregon Center for Aging & Technology (ORCATECH) and Minority Aging Research Study (MARS) were included in the study. Two indoor mobility features were developed using non-parametric parameters (frequency; stability): Indoor mobility frequency (room-to-room transitions/day) was detected using passive infrared (PIR) motion sensors fixed on the walls in four geographic locations (bathroom; bedroom; kitchen; living room) and using door contact sensors attached to the egress door in the entrance. Indoor mobility stability was estimated by variances of number of room-to-room transitions over a week. Test-retest reliability (Intra-class coefficient, ICC) and the minimal clinically important difference (MCID) defined as the standard error of measurement (SEM) were generated. Generalized estimating equations models related mobility features with mild cognitive impairment (MCI) and functional status (gait speed). Results: An average of 206 days (±127) of sensor data were analyzed per individual. Indoor mobility frequency and stability showed good to excellent test-retest reliability (ICCs = 0.91[0.88–0.94]; 0.59[0.48–0.70]). The MCIDs of mobility frequency and mobility stability were 18 and 0.09, respectively. On average, a higher indoor mobility frequency was associated with faster gait speed (β = 0.53, p = 0.04), suggesting an increase of 5.3 room-to-room transitions per day was associated with an increase of 10 cm/s gait speed. A decrease in mobility stability was associated with MCI (β = −0.04, p = 0.03). Discussion: Mobility frequency and stability in the home are clinically meaningful and reliable features. Pervasive-sensing systems deployed in homes can objectively reveal cognitive and functional status in older adults who live alone.

Wu, Chao-Yi↗

DOE OSTI2022

Thermal analysis of RHIC arc dipole magnet cold mass with EIC beam screen

The existing RHIC storage rings – including their superconducting magnet arcs – will be used for the hadron storage ring of the Electron-Ion Collider (EIC). The vacuum chamber of these magnets was not designed for the EIC hadron beams, with shorter bunches and of higher average current than the RHIC beams. With the current stainless steel beam pipe, the resistive-wall (RW) heating will exceed the dynamic heat load budget. Limiting the RW heating is important to prevent the superconducting magnets from quenching and to maintain a low screen temperature necessary to impede the rise of RW heating (higher resistance at higher temperature) as well as to achieve desired ultra-high vacuum. In addition, simulations predict the formation of electron cloud which would further contribute to the dynamic heat load and could compromise the quality and stability of the beam. To reduce the resistive-wall heating and suppress electron cloud, a beam screen will be installed in the vacuum chamber of the RHIC SC magnets. The screen will have a high RRR copper layer at its inner face – useful to reduce the resistive-wall impedance thanks to its high conductivity especially at cryogenic temperatures – and will be coated with a thin layer of amorphous carbon, a material with low secondary electron yield to suppress the formation of electron clouds. The baseline solution envisages a screen that will be cooled by thermal contact to the 4.55 K beam pipe. Detailed thermal analysis have been conducted in ANSYS 2020 for an arc dipole cold mass equipped with a beam screen in order to study the feasibility of a passively-cooled screen and guide its design. Temperature-dependent thermal conductivity properties of all materials in the operating (cryogenic) temperature range are considered. Suitable assumptions and simplifications are made to model the magnet coil and calculate its homogenized thermal conductivity. Sensitivity studies with respect to layer thicknesses and area of contact are carried out and results are presented.

43 PARTICLE ACCELERATORS↗

DOE OSTI2020

Insights into the mechanisms controlling the residual corrosion rate of borosilicate glasses

Borosilicate glasses are widely used to confine high-level radioactive wastes. The lifetime of these materials could reach hundreds of thousands of years if leaching of the glass into groundwater enables the formation of a passivating gel layer. Even in this regime, the glass will never stop corroding as thermodynamic equilibrium between glass and solution cannot be achieved. Therefore, accurate predictions of glass durability including passivation, require a deep understanding of the mechanisms controlling the so-called residual rate. However, despite tremendous efforts, these mechanisms remain poorly understood. Here, focusing on the behavior of the soluble elements of the International Simple Glass (B, Na, and Ca), we show that the residual rate is controlled by the behavior of B, a glass former supposed to dissolve instantaneously when in contact with water and thus widely considered as an ideal tracer. We then demonstrate that B release is controlled by multiple processes highly dependent on the pH. At the beginning of the passivating layer formation, the hydrolysis of B-O-Si linkages is rate-limiting and has an activation energy of ~60 kJ mol –1 , a value slightly lower than that for breaking Si-O-Si linkages. Once the fraction of closed pores resulting from gel restructuring is high enough, then diffusion of both reactants (water molecules) and some products (mainly B aq , Ca aq ) through the growing gel layer becomes rate-limiting. Consequently, B and Ca accumulate in an inner layer referred to as the active zone, with potential feedback on the B-O-Si hydrolysis. A new paradigm, including B as a key element of the system, is proposed to develop a comprehensive model for the corrosion of borosilicate glass.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping

In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.

14 SOLAR ENERGY↗

DOE OSTI2020

DFT modelling of explicit solid–solid interfaces in batteries: methods and challenges

Density Functional Theory (DFT) calculations of electrode material properties in high energy density storage devices like lithium batteries have been standard practice for decades. By contrast, DFT modelling of explicit interfaces in batteries arguably lacks universally adopted methodology and needs further conceptual development. In this paper, we focus on solid–solid interfaces, which are ubiquitous not just in all-solid state batteries; liquid-electrolyte-based batteries often rely on thin, solid passivating films on electrode surfaces to function. We use metal anode calculations to illustrate that explicit interface models are critical for elucidating contact potentials, electric fields at interfaces, and kinetic stability with respect to parasitic reactions. The examples emphasize three key challenges: (1) the “dirty” nature of most battery electrode surfaces; (2) voltage calibration and control; and (3) the fact that interfacial structures are governed by kinetics, not thermodynamics. To meet these challenges, developing new computational techniques and importing insights from other electrochemical disciplines will be beneficial.

25 ENERGY STORAGE↗

DOE OSTI2020

Kinetic versus Thermodynamic Stability of LLZO in Contact with Lithium Metal

Li 7 La 3 Zr 2 O 12 (LLZO) garnet-based oxides are a promising class of solid electrolytes used as the separator in all-solid-state batteries (ASSBs). While LLZO is considered to have a wide electrochemical stability window, its intrinsic stability in contact with lithium metal is not sufficiently well understood, and there is still a debate on the key question of whether LLZO does or does not form passivation layers before and during cycling. Utilizing both in situ and operando X-ray photoelectron spectroscopy techniques, in this work we reveal the presence of a kinetic barrier to the reduction of LLZO by Li metal, with the extent of oxygen-deficient interphase (ODI) formation depending sensitively on the energetics of Li metal arriving at the Li vertical bar LLZO interface. Despite the clear presence of a kinetic barrier to reduction, the electrochemical response of the Li vertical bar LLZO interface is unchanged by the presence of the ODI, indicating that ODI formation during electrochemical cycling does not hinder charge transfer across the Li vertical bar LLZO interface. Overall, these results reveal that the reactivity of LLZO with Li metal depends not only on the material properties of the adjoining phases (i.e., surface purity and active contact) and their resulting thermodynamic stability but also on the energy input at the interface and the resulting reaction kinetics. Furthermore, the presence of a kinetic barrier to reduction highlights the additional complexities governing the reactivity of solid-state interfaces in ASSBs and underscores the importance of operando characterization of interfacial stability to design more robust, high-performance protection strategies for solid electrolytes in contact with reactive electrodes.

25 ENERGY STORAGE↗

DOE OSTI2026

Screen-Printed SHJ Solar Cells with Complex Silver Inks

Metallization using complex metal inks has gained significant research interest due to its cost-effectiveness and ability to achieve performance comparable to traditional nanoparticle pastes. This study introduces the use of complex silver (Ag) inks applied via industrial screen-printing for silicon heterojunction (SHJ) solar cell metallization. The printed Ag lines exhibit a contact resistivity on SHJ tin-doped indium oxide (ITO) surfaces as low as approximately 0.2-12 mO cm2. Photoluminescence imaging reveals minimal surface passivation degradation (iVoc < 3.5 mV), while scanning electron microscopy (SEM) shows a denser structure compared to Ag layer from nanoparticle pastes. The printed Ag grid features thin (approximately 1 micrometer), continuous fingers approximately 100-120 micrometer wide, significantly thinner than conventional approximately 20-30 micrometer fingers produced with nanoparticle-based pastes. Double printing achieves SHJ device efficiencies exceeding 20%, the highest reported for industrial solar cell precursors using this technology. These findings highlight the potential of complex Ag inks as a sustainable alternative to particle-based pastes, reducing Ag consumption and processing temperatures without compromising efficiency.

14 SOLAR ENERGY↗

DOE OSTI2020

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

14 SOLAR ENERGY↗

DOE OSTI2023

Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts

A tunneling atomic layer deposited (ALD) AlO x layer was inserted in a Si|SiO x |AlO x |MoO x |metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky barrier height. ALD AlO x provides a synthesis-tunable fixed charge and can provide excellent field effect passivation at the SiO x |AlO x interface. A large (>1 × 10 12 q.cm –2 ) negative fixed charge density was expected to decrease Schottky barrier height on p-type silicon and increase Schottky barrier height on n-type silicon by up to 0.4 eV based on an electrostatic model. Fixed charge density and interface trap state density were measured using a thick layer of AlO x in metal oxide semiconductor capacitor structures (MOSCAPs); Schottky barrier height and specific contact resistivity were measured using a tunneling-active layer of AlO x in contacted structures with MoO x . In some samples, HfO x interface layers were inserted between AlO x and silicon to quench the fixed negative charge. The Schottky barrier height was found to vary with processing conditions but did not have a strong correlation with expected fixed charge density. Here, while fixed charge may play a role in determining the Schottky barrier height, other parameters also have significant affect. Further work is needed to minimize contact resistivity and elucidate other factors impacting the Schottky barrier height.

14 SOLAR ENERGY↗

DOE OSTI2022

Experimental and analytical study of the hydrodynamic and single and two-phase convective heat transfer performance of flexible PDMS microchannels with micropillar arrays

Various copper and silicon based thermal management systems are used in the cooling of electronics. However, the rigid nature of these materials along with their high thermal and electrical conductivity pose a difficulty in developing direct contact embedded flexible cooling systems that can offer robust cooling performance. The low density, thermal stability, chemical inertness, and electrical insulation of Polydimethylsiloxane (PDMS) make it an ideal material to develop lightweight direct contact thermal management systems for electronics. Its ease of fabrication with tunable flexibility provides the opportunity to go beyond traditional electronics and develop advanced active and passive thermal management systems for a wide–range of applications in foldable and wearable electronics, liquid cooling garments, microgravity, and electric motors. In this study, a flexible PDMS based microchannel with micropillar arrays, which enhance the thermal performance of the device through capillary-assisted flow, has been developed. The hydrodynamic and convection heat transfer performance of three PDMS wick pillar geometries, ranging from a porosity of 0.8–0.91, are investigated and compared under single-phase and two-phase conditions. Dielectric coolant FC-3283 is employed and permeability measurements are made for mass fluxes ranging from 53 kg/m 2 s to 369 kg/m 2 s. Given its conformability, the device demonstrates a deviation from Darcy’s Law, within the laminar regime, with an increasing permeability with mass flux at the rate of ~0.5–0.8 Darcy/(kg/m 2 s). A semi-analytical model has been developed and reported to quantify the conformability of the device. The heat transfer performance is experimentally evaluated using the same dielectric fluid for mass flux ranging from 105 kg/m 2 s to 420 kg/m 2 s with heat fluxes ranging from 1.5 W/cm 2 to 16 W/cm 2 . Heat transfer coefficients of up to 7000 W/m 2 K are observed, which are comparable to copper and silicon microchannels. The effect of porosity on the single phase thermal performance has been evaluated against the pumping power to provide a basis for thermal management system design. Finally, high-speed imaging is performed to study the two-phase flow characteristics to provide insight into the vapor formation and removal.

42 ENGINEERING↗

DOE OSTI2020

Elucidating Interfacial Stability between Lithium Metal Anode and Li Phosphorus Oxynitride via In Situ Electron Microscopy

Li phosphorus oxynitride (LiPON) is one of a very few solid electrolytes that have demonstrated high stability against Li metal and extended cyclability with high Coulombic efficiency for all solid-state batteries (ASSBs). However, theoretical calculations show that LiPON reacts with Li metal. Here, we utilize in situ electron microscopy to observe the dynamic evolutions at the LiPON–Li interface upon contacting and under biasing. We reveal that a thin interface layer (~60 nm) develops at the LiPON–Li interface upon contact. This layer is composed of conductive binary compounds that show a unique spatial distribution that warrants an electrochemical stability of the interface, serving as an effective passivation layer. Our results explicate the excellent cyclability of LiPON and reconcile the existing debates regarding the stability of the LiPON–Li interface, demonstrating that, though glassy solid electrolytes may not have a perfect initial electrochemical window with Li metal, they may excel in future applications for ASSBs.

25 ENERGY STORAGE↗