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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Xiao, Ye-Gao↗
NASA NTRS2006

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Yan, Feng↗
NASA NTRS2008

Optical Measurement of Mass Flow of a Two-Phase Fluid

An optoelectronic system utilizes wavelength-dependent scattering of light for measuring the density and mass flow of a two-phase fluid in a pipe. The apparatus was invented for original use in measuring the mass flow of a two-phase cryogenic fluid (e.g., liquid hydrogen containing bubbles of hydrogen gas), but underlying principles of operation can readily be adapted to non-cryogenic two-phase fluids. The system (see figure) includes a laser module, which contains two or more laser diodes, each operating at a different wavelength. The laser module also contains beam splitters that combine the beams at the various wavelengths so as to produce two output beams, each containing all of the wavelengths. One of the multiwavelength output beams is sent, via a multimode fiberoptic cable, to a transmitting optical coupler. The other multiwavelength output beam is sent, via another multimode fiber-optic cable, to a reference detector module, wherein fiber-optic splitters split the light into several multiwavelength beams, each going to a photodiode having a spectral response that is known and that differs from the spectral responses of the other photodiodes. The outputs of these photodiodes are digitized and fed to a processor, which executes an algorithm that utilizes the known spectral responses to convert the photodiode outputs to obtain reference laser-power levels for the various wavelengths. The transmitting optical coupler is mounted in (and sealed to) a hole in the pipe and is oriented at a slant with respect to the axis of the pipe. The transmitting optical coupler contains a collimating lens and a cylindrical lens that form the light emerging from the end of the fiber-optic cable into a fan-shaped beam in a meridional plane of the pipe. Receiving optical couplers similar to the transmitting optical couplers are mounted in the same meridional plane at various longitudinal positions on the opposite side of the pipe, approximately facing the transmitting optical coupler along the same slant. Light collected by each receiving optical coupler is sent, via a multimode fiber-optic cable, to a detector module similar to the reference detector module. The outputs of the photodiodes in each detector module are digitized and processed, similarly to those of the reference detector module, to obtain indications of the amounts of light of each wavelength scattered to the corresponding receiving position. The value for each wavelength at each position is also normalized to the reference laser-power level for that wavelength. From these normalized values, the density and the mass flow rate of the fluid are estimated.

Wiley, John↗
DOE OSTI2020

Modular low cost trackerless spectral sensor

A photodiode sensor device and systems. The photodiode sensor device includes a housing portion. The housing portion includes a cylindrical enclosure. A window is disposed at a first end of the housing portion. A filter wheel is within the housing portion. A motor positioned within the housing is adjacent the filter wheel opposite the window. The motor is attached to the filter wheel. A photodiode sensor within the housing portion intermediate the first photodiode sensor and the window. The first photodiode sensor receives filtered light incident on the window and transmit a signal associated with sensed parameters of the filtered light. Also, a hemispherical dome for diffusing the light to a collimating lens has a grating, a focusing lens, and a linear detector array. An exit port transmits light to the collimating lens. The sensor array is opposite the grating for sensing the diffused light.

14 SOLAR ENERGY↗
DOE OSTI2022

Fast Near-Infrared Photodetection Using III–V Colloidal Quantum Dots

Colloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II–VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III–Vs—if their surface chemistry can be mastered—offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm 2 V -1 s -1 ) with a 4× reduction in permittivity compared to PbS CQDs. Finally, the resulting photodiodes achieve a response time faster than 2 ns—the fastest photodiode among previously reported CQD photodiodes—combined with an external quantum efficiency (EQE) of 30% at 940 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2022

QTIA, a 2.5 or 10 Gbps 4-channel array optical receiver ASIC in a 65 nm CMOS technology

Here, the Quad transimpedance and limiting amplifier (QTIA) is a 4-channel array optical receiver ASIC, developed using a 65 nm CMOS process. It is configurable between the bit rate of 2.56 Gbps and 10 Gbps per channel. QTIA offers careful matching to both GaAs and InGaAs photodiodes. At this R&D stage, each channel has a different biasing scheme to the photodiode for optimal coupling. A charge pump is implemented in one channel to provide a higher reverse bias voltage, which is especially important to mitigate radiation effects on the photodiodes. The circuit functions of QTIA successfully passed the lab tests with GaAs photodiodes.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1973

Investigation of responsivity and noise in a direct-coupled photodetector-preamplifier for facsimile cameras

The direct-coupled (DC) mode of detector operation is evaluated for use in a facsimile camera. Photodiode-preamplifier sensitivity is described in terms of photodiode responsivity and possible noise sources resulting from the photodiode and preamplifier. Responsivity and noise limitations are experimentally verified and used to predict photodiode-preamplifier sensitivity under a wide range of operating conditions. Results demonstrate that the DC mode offers advantages in sensitivity and reduced mechanical complexity for facsimile cameras over the more common technique of chopping the radiation and ac amplifying the resultant signal.

Kelly, W. L., IV↗
NASA NTRS1992

X-ray spectroscopy with silicon pin and avalanche photo diodes

Results of an evaluation of silicon P-Intrinsic-N (PIN) photodiodes and Avalanche Photodiodes (APD) for the direct detection of soft x rays from 1 to 20 keV and for the detection of scintillation light output from CsI(TI) for higher x ray energies (30 to 1000 keV) are presented. About one keV resolution was achieved at room temperature for both the PIN and APD detectors for soft x rays (1 to 20 keV). Commercially available, low power (18 mV), low noise, hybrid preamplifiers, were used. These photodiodes were also coupled to CsI(TI) scintillator and obtained about 6 resolution at 662 keV. The photodiode frequency response matches well with the emission spectrum of the CsI(TI) scintillator providing good spectral resolution and a higher signal than NaI(TI) when viewed by conventional photomultipliers. A PIN-CsI(TI) combination provides a low energy threshold of around 60 keV while for the APD-CsI(TI) it is 15 keV.

Desai, U. D.↗
NASA NTRS2005

Characterization of Dual-Band Infrared Detectors for Application to Remote Sensing

NASA Langley Research Center (LaRC), in partnership with the Rensselaer Polytechnic Institute (RPI), developed photovoltaic infrared (IR) detectors suitable at two different wavelengths using Sb-based material systems. Using lattice-matched InGaAsSb grown on GaSb substrates, dual wavelength detectors operating at 1.7 and 2.5 micron wavelengths can be realized. P-N junction diodes are fabricated on both GaSb and InGaAsSb materials. The photodiode on GaSb detects wavelengths at 1.7 micron and the InGaAsSb detector detects wavelengths at 2.2 micron or longer depending on the composition. The films for these devices are grown by metal-organic vapor phase epitaxy (MOVPE). The cross section of the independently accessed back-to-back photodiode dual band detector consists of a p-type substrate on which n-on-p GaInAsSb junction is grown, followed by a p-on-n GaSb junction. There are three ohmic contacts in this structure, one to the p-GaSb top layer, one to the n-GaSb/n-GaInAsSb layer and one to the p-type GaSb substrate. The common terminal is the contact to the n-GaSb/n-GaInAsSb layer. The contact to the n-GaSb/p-GaInAsSb region of the photodiode in the dual band is electrically connected and is accessed at the edge of the photodiode. NASA LaRC acquired the fabricated dual band detector from RPI and characterized the detector at its Detector Characterization Laboratory. Characterization results, such as responsivity, noise, quantum efficiency, and detectivity will be presented.

Abedin, M. Nurul↗
NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗
NASA NTRS2008

Fast Offset Laser Phase-Locking System

Figure 1 shows a simplified block diagram of an improved optoelectronic system for locking the phase of one laser to that of another laser with an adjustable offset frequency specified by the user. In comparison with prior systems, this system exhibits higher performance (including higher stability) and is much easier to use. The system is based on a field-programmable gate array (FPGA) and operates almost entirely digitally; hence, it is easily adaptable to many different systems. The system achieves phase stability of less than a microcycle. It was developed to satisfy the phase-stability requirement for a planned spaceborne gravitational-wave-detecting heterodyne laser interferometer (LISA). The system has potential terrestrial utility in communications, lidar, and other applications. The present system includes a fast phasemeter that is a companion to the microcycle-accurate one described in High-Accuracy, High-Dynamic-Range Phase-Measurement System (NPO-41927), NASA Tech Briefs, Vol. 31, No. 6 (June 2007), page 22. In the present system (as in the previously reported one), beams from the two lasers (here denoted the master and slave lasers) interfere on a photodiode. The heterodyne photodiode output is digitized and fed to the fast phasemeter, which produces suitably conditioned, low-latency analog control signals which lock the phase of the slave laser to that of the master laser. These control signals are used to drive a thermal and a piezoelectric transducer that adjust the frequency and phase of the slave-laser output. The output of the photodiode is a heterodyne signal at the difference between the frequencies of the two lasers. (The difference is currently required to be less than 20 MHz due to the Nyquist limit of the current sampling rate. We foresee few problems in doubling this limit using current equipment.) Within the phasemeter, the photodiode-output signal is digitized to 15 bits at a sampling frequency of 40 MHz by use of the same analog-to-digital converter (ADC) as that of the previously reported phasemeter. The ADC output is passed to the FPGA, wherein the signal is demodulated using a digitally generated oscillator signal at the offset locking frequency specified by the user. The demodulated signal is low-pass filtered, decimated to a sample rate of 1 MHz, then filtered again. The decimated and filtered signal is converted to an analog output by a 1 MHz, 16-bit digital-to-analog converters. After a simple low-pass filter, these analog signals drive the thermal and piezoelectric transducers of the laser.

Shaddock, Daniel↗
NASA NTRS2007

Gratings and Random Reflectors for Near-Infrared PIN Diodes

Crossed diffraction gratings and random reflectors have been proposed as means to increase the quantum efficiencies of InGaAs/InP positive/intrinsic/ negative (PIN) diodes designed to operate as near-infrared photodetectors. The proposal is meant especially to apply to focal-plane imaging arrays of such photodetectors to be used for near-infrared imaging. A further increase in quantum efficiency near the short-wavelength limit of the near-infrared spectrum of such a photodetector array could be effected by removing the InP substrate of the array. The use of crossed diffraction gratings and random reflectors as optical devices for increasing the quantum efficiencies of quantum-well infrared photodetectors (QWIPs) was discussed in several prior NASA Tech Briefs articles. While the optical effects of crossed gratings and random reflectors as applied to PIN photodiodes would be similar to those of crossed gratings and random reflectors as applied to QWIPs, the physical mechanisms by which these optical effects would enhance efficiency differ between the PIN-photodiode and QWIP cases: In a QWIP, the multiple-quantum-well layers are typically oriented parallel to the focal plane and therefore perpendicular or nearly perpendicular to the direction of incidence of infrared light. By virtue of the applicable quantum selection rules, light polarized parallel to the focal plane (as normally incident light is) cannot excite charge carriers and, hence, cannot be detected. A pair of crossed gratings or a random reflector scatters normally or nearly normally incident light so that a significant portion of it attains a component of polarization normal to the focal plane and, hence, can excite charge carriers. A pair of crossed gratings or a random reflector on a PIN photodiode would also scatter light into directions away from the perpendicular to the focal plane. However, in this case, the reason for redirecting light away from the perpendicular is to increase the length of the optical path through the detector to increase the probability of absorption of photons and thereby increase the resulting excitation of charge carriers. A pair of crossed gratings or a random reflector according to the proposal would be fabricated as an integral part of photodetector structure on the face opposite the focal plane (see figure). In the presence of crossed gratings, light would make four passes through the device before departing. In the presence of a random reflector, a significant portion of the light would make more than four passes: After each bounce, light would be scattered at a different random angle, and would have a chance to escape only when it was reflected, relative to the normal, at an angle less than the critical angle for total internal reflection. Given the indices of refraction of the photodiode materials, this angle would be about 17 . This amounts to a very narrow cone for escape of trapped light.

Gunapala, Sarath↗
NASA NTRS2006

Microwave Oscillators Based on Nonlinear WGM Resonators

Optical oscillators that exploit resonantly enhanced four-wave mixing in nonlinear whispering-gallery-mode (WGM) resonators are under investigation for potential utility as low-power, ultra-miniature sources of stable, spectrally pure microwave signals. There are numerous potential uses for such oscillators in radar systems, communication systems, and scientific instrumentation. The resonator in an oscillator of this type is made of a crystalline material that exhibits cubic Kerr nonlinearity, which supports the four-photon parametric process also known as four-wave mixing. The oscillator can be characterized as all-optical in the sense that the entire process of generation of the microwave signal takes place within the WGM resonator. The resonantly enhanced four-wave mixing yields coherent, phase-modulated optical signals at frequencies governed by the resonator structure. The frequency of the phase-modulation signal, which is in the microwave range, equals the difference between the frequencies of the optical signals; hence, this frequency is also governed by the resonator structure. Hence, further, the microwave signal is stable and can be used as a reference signal. The figure schematically depicts the apparatus used in a proof-of-principle experiment. Linearly polarized pump light was generated by an yttrium aluminum garnet laser at a wavelength of 1.32 microns. By use of a 90:10 fiber-optic splitter and optical fibers, some of the laser light was sent into a delay line and some was transmitted to one face of glass coupling prism, that, in turn, coupled the laser light into a crystalline CaF2 WGM disk resonator that had a resonance quality factor (Q) of 6x10(exp 9). The output light of the resonator was collected via another face of the coupling prism and a single-mode optical fiber, which transmitted the light to a 50:50 fiber-optic splitter. One output of this splitter was sent to a slow photodiode to obtain a DC signal for locking the laser to a particular resonator mode. The other output of this splitter was combined with the delayed laser signal in another 50:50 fiber-optic splitter used as a combiner. The output.of the combiner was fed to a fast photodiode that demodulated light and generated microwave signal. In this optical configuration, the resonator was incorporated into one arm of a Mach-Zehnder interferometer, which was necessary for the following reasons: It was found that when the output of the resonator was sent directly to a fast photodiode, the output of the photodiode did not include a measurable microwave signal. However, when the resonator was placed in an arm of the interferometer and the delay in the other arm was set at the correct value, the microwave signal appeared. Such behavior is distinctly characteristic of phase-modulated light. The phase-modulation signal had a frequency of about 8 GHz, corresponding to the free spectral range of the resonator. The spectral width of this microwave signal was less than 200 Hz. The threshold pump power for generating the microwave signal was about 1 mW. It would be possible to reduce the threshold power by several orders of magnitude if resonators could be made from crystalline materials in dimensions comparable to those of micro-resonators heretofore made from fused silica.

Maleki, Lute↗
DOE OSTI2024

Optical and photoelectric properties of surface barrier diodes based on n- Hg3In2Te6 crystals

The high radiation resistance of Hg3In2Te6 (MIT) single crystals to large doses of ionizing radiation makes devices quite attractive. Such a feature of the crystal structure has not only important advantages, but also causes serious technological difficulties in doping and controlling the specific resistance within the required limits and type of conductivity of single crystals. These technological difficulties create serious problems when creating structures with a potential barrier, especially with a p-n junction. At the moment, there are no publications on the creation of a p-n junction based on MIT. The only alternative is to create a potential barrier such as a Schottky diode or a metal-dielectric-semiconductor structure. This limits the use of MIT to produce, for example, rectifier diodes that can operate at relatively high reverse bias voltages. The typical resistivity of single crystals of MIT of n-type conductivity, which are used for the manufacture of diodes and photodiodes, is approximately equal to ρ≈103-104 Ω×cm. Such a specific resistance leads to a relatively large resistance of the neutral part of the single crystal, which in turn limits the direct currents of the rectifier diodes and significantly limits an important parameter of photodiodes - the dynamic range of the watt-ampere characteristic. This problem arises from the relatively high series resistance of the substrate. For rectifier diodes, this relatively large series resistance leads to a significant forward bias voltage drop, which reduces both the rectification factor and the amount of rectified current. We have already created diodes and photodiodes on Cr/MIT/Cr single crystals with a specific resistance of ρ≈103-104 Ω×cm. The diodes had relatively small dark currents but had the disadvantage of a relatively large specific resistance of the substrate, which we have already discussed above [1,2,3].

Sklyarchuk, V.↗
NASA NTRS1977

Vacuum UV performance of silicon detectors

The sensitivity, time-varying response, and spatial sensitivity of four silicon detectors of vacuum UV were measured by passing a typical flux of 3 x 10 photons/s at the Lyman alpha line of 1215.7 A through an exit aperture of 0.55 mm x 0.8 mm. The detectors tested were: (1) a Fairchild FPM 200 silicon planar passivated photodiode with the window removed so that radiation could directly impinge on the center of the 1.0 mm square silicon chip, (2) a Fairchild FPM 100 silicon NPN planar passivated phototransistor, (3) the Hewlett-Packard 5082-4204 silicon planar PIN photodiode, and (4) the United Detector Technology PIN Spot/2 special sensitive silicon Schottky surface photodiode with the window removed.

Ohlhaber, R. L.↗
NASA NTRS1978

High-speed communication detector characterization by bit error rate measurements

Performance data taken on several candidate high data rate laser communications photodetectors is presented. Measurements of bit error rate versus signal level were made in both a 1064 nm system at 400 Mbps and a 532 nm system at 500 Mbps. RCA silicon avalanche photodiodes are superior at 1064 nm, but the Rockwell hybrid 3-5 avalanche photodiode preamplifiers offer potentially superior performance. Varian dynamic crossed field photomultipliers are superior at 532 nm, however, the RCA silicon avalanche photodiode is a close contender.

Green, S. I.↗
NASA NTRS1983

IR detectors - Heterodyne and direct

Recent developments in the area of wide-bandwidth infrared detectors, both for direct and heterodyne detection, are reviewed with emphasis on the differences and tradeoffs between photodiodes and photoconductors. In the direct-detection mode, where amplifier noise is an important consideration, the state-of-the-art detection noise equivalent power is approximated by 500 (B/10 MHz) pW. At short wavelengths (less than 1.7 micron), avalanche photodiodes offer superior performance, with a detection noise equivalent power of about 50 (B/10 MHz) pW. In heterodyne operation, near-ideal sensitivities of about 0.3 (B/10 MHz) pW have been achieved with 77K photodiodes. At 10 microns, HgCdTe photoconductors offer very good heterodyne performance at elevated temperatures: 2 (B/10 MHz) pW at 195 K and potentially 3 (B/10 MHz) pW at 250 K.

Spears, D. L.↗
NASA NTRS1986

XUV radiometric standards at NBS

The far-UV and XUV detector calibration services at NBS, the properties of the detectors, and the spectrometer calibration facilities at the Synchrotron Ultraviolet Radiation Facility (SURF II) at NBS are described. The method used to calibrate the quantum efficiency of windowless photodiode detectors in the ionization chamber, and the facilities for calibrating photodiodes at various wavelengths are discussed. The cathode and anode of the windowless photodiodes and their operation are examined. Consideration is given to the calculation of spectral irradiance from SURF II; the two stations of the spectrometer facility; the large spectrometer calibration chamber; and sources of error in flux determinations for SURF II.

Ott, W. R.↗