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At least 235 records · Page 13

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NASA NTRS1986

Phase-locked arrays of semiconductor injection lasers - A review

Arrays of phase-locked semiconductor injection lasers integrated monolithically on the same substrate are one potential method for obtaining higher power levels (in controlled mode operation) than those available from a single laser. This paper describes basic methods for analyzing the electrical and optical characteristics of these devices, and discusses problems associated with maintaining a stable operation in a single array mode ('supermode'). Various experimental results are presented and compared with theory.

Katz, Joseph↗

NASA NTRS1984

Diamond shines in high-power devices

The 20-W S-band power amplifiers aboard the GOES E and F spacecraft exemplify the problems that type-IIa diamond heat sinks have been developed to solve, including the requirement for junction temperatures to be kept below 125 C. Diamond heat sinks allow high power S-band semiconductors to operate at a flange temperature of 70 C without exceeding the stipulated maximum junction temperature. Type-IIA diamond, which is an excellent electrical insulator, possesses a thermal conductivity four times better than pure copper at 100 C, and outperforms BeO by an even greater margin. Higher costs are offset by high reliability. Attention is presently given to the results of tests conducted by the NASA Goddard Space Flight Center.

Line, L.↗

NASA NTRS1982

Gain saturation in semiconductor lasers - Theory and experiment

The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.

Kasemset, D.↗

NASA NTRS1996

Alkali layered compounds interfaces for energy conversion and energy storage

During year one a new ultra-high vacuum, an Ar(+) ion sputterer, a low energy electron diffraction (LEED) system, an Auger electron spectrometer (AES), a work function measurement device with a Kelvin probe, and related accessories were used. The study found a focus in the adsorption of chalcogenides on Si and III-V compound semiconductors. In the second year, a scanning tunneling microscope was obtained along with a quadrapole mass spectrometer, power supplies, a computer, a chart recorder, etc. We started the systematic study on the adsorption of chalcogenides on the compound semiconductor surfaces. The third year saw the mounting of the scanning tunneling microscope (STM) on the existing UHV system. The investigation continued with the adsorption of Cs (alkali) on S-covered Si(100)2x1 surfaces. Then the adsorption of S on Cs-covered Si(100) surfaces was studied.

Papageorgopoulos, Chris A.↗

NASA NTRS2012

Prognostics of Power Electronics, Methods and Validation Experiments

Abstract Failure of electronic devices is a concern for future electric aircrafts that will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. As a result, investigation of precursors to failure in electronics and prediction of remaining life of electronic components is of key importance. DC-DC power converters are power electronics systems employed typically as sourcing elements for avionics equipment. Current research efforts in prognostics for these power systems focuses on the identification of failure mechanisms and the development of accelerated aging methodologies and systems to accelerate the aging process of test devices, while continuously measuring key electrical and thermal parameters. Preliminary model-based prognostics algorithms have been developed making use of empirical degradation models and physics-inspired degradation model with focus on key components like electrolytic capacitors and power MOSFETs (metal-oxide-semiconductor-field-effect-transistor). This paper presents current results on the development of validation methods for prognostics algorithms of power electrolytic capacitors. Particularly, in the use of accelerated aging systems for algorithm validation. Validation of prognostics algorithms present difficulties in practice due to the lack of run-to-failure experiments in deployed systems. By using accelerated experiments, we circumvent this problem in order to define initial validation activities.

Kulkarni, Chetan S.↗

NASA NTRS1985

A new very high voltage semiconductor switch

A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of 10 higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.

Sundberg, G. R.↗

NASA NTRS1985

A new very high voltage semiconductor switch

Sundberg, G. R.↗

NASA NTRS2013

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ AlInGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

Frez, Clifford F.↗

NASA NTRS2003

Thermoelectric microdevice fabricated by a MEMS-like electrochemical process

Microelectromechanical systems (MEMS) are the basis of many rapidly growing technologies, because they combine miniature sensors and actuators with communications and electronics at low cost. Commercial MEMS fabrication processes are limited to silicon-based materials or two-dimensional structures. Here we show an inexpensive, electrochemical technique to build MEMS-like structures that contain several different metals and semiconductors with three-dimensional bridging structures. We demonstrate this technique by building a working microthermoelectric device. Using repeated exposure and development of multiple photoresist layers, several different metals and thermoelectric materials are fabricated in a three-dimensional structure. A device containing 126 n-type and p-type (Bi, Sb)2Te3 thermoelectric elements, 20 microm tall and 60 microm in diameter with bridging metal interconnects, was fabricated and cooling demonstrated. Such a device should be of technological importance for precise thermal control when operating as a cooler, and for portable power when operating as a micro power generator.

Evaluation Studies↗

NASA NTRS1995

Monitoring Composite Material Pressure Vessels with a Fiber-Optic/Microelectronic Sensor System

We discuss the concept of an integrated, fiber-optic/microelectronic distributed sensor system that can monitor composite material pressure vessels for Air Force space systems to provide assessments of the overall health and integrity of the vessel throughout its entire operating history from birth to end of life. The fiber optic component would include either a semiconductor light emitting diode or diode laser and a multiplexed fiber optic sensing network incorporating Bragg grating sensors capable of detecting internal temperature and strain. The microelectronic components include a power source, a pulsed laser driver, time domain data acquisition hardware, a microprocessor, a data storage device, and a communication interface. The sensing system would be incorporated within the composite during its manufacture. The microelectronic data acquisition and logging system would record the environmental conditions to which the vessel has been subjected to during its storage and transit, e.g., the history of thermal excursions, pressure loading data, the occurrence of mechanical impacts, the presence of changing internal strain due to aging, delamination, material decomposition, etc. Data would be maintained din non-volatile memory for subsequent readout through a microcomputer interface.

Klimcak, C.↗

NASA NTRS2010

Advanced Avionics and Processor Systems for a Flexible Space Exploration Architecture

The Advanced Avionics and Processor Systems (AAPS) project, formerly known as the Radiation Hardened Electronics for Space Environments (RHESE) project, endeavors to develop advanced avionic and processor technologies anticipated to be used by NASA s currently evolving space exploration architectures. The AAPS project is a part of the Exploration Technology Development Program, which funds an entire suite of technologies that are aimed at enabling NASA s ability to explore beyond low earth orbit. NASA s Marshall Space Flight Center (MSFC) manages the AAPS project. AAPS uses a broad-scoped approach to developing avionic and processor systems. Investment areas include advanced electronic designs and technologies capable of providing environmental hardness, reconfigurable computing techniques, software tools for radiation effects assessment, and radiation environment modeling tools. Near-term emphasis within the multiple AAPS tasks focuses on developing prototype components using semiconductor processes and materials (such as Silicon-Germanium (SiGe)) to enhance a device s tolerance to radiation events and low temperature environments. As the SiGe technology will culminate in a delivered prototype this fiscal year, the project emphasis shifts its focus to developing low-power, high efficiency total processor hardening techniques. In addition to processor development, the project endeavors to demonstrate techniques applicable to reconfigurable computing and partially reconfigurable Field Programmable Gate Arrays (FPGAs). This capability enables avionic architectures the ability to develop FPGA-based, radiation tolerant processor boards that can serve in multiple physical locations throughout the spacecraft and perform multiple functions during the course of the mission. The individual tasks that comprise AAPS are diverse, yet united in the common endeavor to develop electronics capable of operating within the harsh environment of space. Specifically, the AAPS tasks for the Federal fiscal year of 2010 are: Silicon-Germanium (SiGe) Integrated Electronics for Extreme Environments, Modeling of Radiation Effects on Electronics, Radiation Hardened High Performance Processors (HPP), and and Reconfigurable Computing.

Keys, Andrew S.↗

NASA NTRS2010

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Frez, Clifford F.↗

NASA NTRS1991

Advances in microsensor development for gas and flow measurement in space power and propulsion systems

Emerging microelectromechanical sculpturing technology is presently extended, in conjunction with the use of deep semiconductor impurities having extreme flow sensitivities, small masses for shortest time response, and unconventional electrode schemes for elevated-temperature operation, for rocket-engine fuel flow sensing tasks. The radiation component of heat transfer is negligible, so that the device operates on the basis of conduction and convection loss.

Henderson, H. T.↗

NASA NTRS1994

Improved Ferroelectric Memories With Nondestructive Readout

Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}.

Thakoor, Sarita↗

NASA NTRS2010

Low Mass Printable Devices for Energy Capture, Storage, and Use for Space Exploration Missions

The energy-efficient, environmentally friendly technology that will be presented is the result of a Space Act Agreement between -Technologies Worldwide, Inc., and the National Aeronautics and Space Administration s (NASA s) Marshall Space Flight Center (MSFC). This work combines semiconductor and printing technologies to advance lightweight electronic and photonic devices having excellent potential for commercial and exploration applications, and is an example of industry and government cooperation that leads to novel inventions. Device development involves three energy generation and consumption projects: 1) a low mass efficient (low power, low heat emission) micro light-emitting diode (LED) area lighting device; 2) a low-mass omni-directional efficient photovoltaic (PV) device with significantly improved energy capture; and 3) a new approach to building supercapacitors. These three technologies - energy capture, storage, and usage (e.g., lighting) - represent a systematic approach for building efficient local micro-grids that are commercially feasible; furthermore, these same technologies will be useful for lightweight power generation that enables inner planetary missions using smaller launch vehicles and facilitates surface operations. The PV device model is a two-sphere, light-trapped sheet approximately 2-mm thick. The model suggests a significant improvement over current thin film systems. All three components may be printed in line by printing sequential layers on a standard screen or flexographic direct impact press using the threedimensional printing technique (3DFM) patented by NthDegree. MSFC is testing the robustness of prototype devices in the harsh space and lunar surface environments, and available results will be reported. Unlike many traditional light sources, this device does not contain toxic compounds, and the LED component has passed stringent off-gassing tests required for potential manifesting on spacecraft such as the International Space Station. Future exploration missions will benefit from "green" technology lighting devices such as this, which show great promise for both terrestrial use and space missions.

Frazier, Donald O.↗

NASA NTRS2006

Development of Efficient Mid-IR Interband Cascade Lasers for Chemical Sensing

Significant progress has been made: Above room temperature (up to 350K) pulsed operation has been demonstrated. CW operation temperature has been raised up to 237 K. DFB IC lasers have been applied for the detection of trace gases such as CH4, HCl, and H2CO. Devices have been operated continuously over several hundred hours without degradation. Main challenge remains for many potential applications of ICLs. CW operation at room temperature and above with significant output powers. There is still significant room for improvement: Laser design and material quality - many parameters have not been optimized. Device fabrication and thermal management (passivation, better mounting, etc.). Significantly higher output power can be achieved with laser arrays.

diode lasers↗

NASA NTRS2010

Development of SiC Large Tapered Crystal Growth

Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

Neudeck, Phil↗

NASA NTRS1994

Design of power electronics for TVC and EMA systems

The EMA systems proposed for future space transportation applications are high power systems operating at voltages up to 270 Vdc and at current levels on the order of hundreds of amperes. The position of the actuator is controlled by modulating the flow of energy from the source to an electric motor with an inverter. Hard-switching of the semiconductor devices in the inverter results in considerable device switching stresses and losses and in the generation of substantial amounts of EMI. Both of these can be reduced by employing zero-voltage-switching (ZVS) techniques in the inverter. This project has focused on the development of a ZVS inverter for the Marshall Space Center EMA prototypes, which utilize brushless dc motors to convert electrical energy to mechanical energy. An inverter which permitted zero-voltage switching and a quasi-PWM operation was selected for study and implementation. A waveshaping circuit is added to the front of a standard three-phase inverter to achieve the desired switching properties. This circuit causes the input voltage of the three-phase inverter to ring to zero where it is clamped for a short period of time. During this zero-voltage period, any of the semiconductor switches in the three-phase inverter are switched on or off at zero voltage resulting in a reduction in switching losses and EMI. The operation of this waveshaping circuit and its interaction with the three-phase inverter are described. The different circuit modes were analyzed using equivalent circuits. Based on this analysis, design relationships were developed for calculating component values for the circuit elements in the waveshaping circuit. Waveforms of various voltages and currents in the waveshaping circuit were plotted and used to determine the ratings of the semiconductors in the waveshaping circuit. The implementation of this inverter are described. Block diagrams for the overall control system and the waveshaping circuit control are presented and discussed. The current control scheme employed in the controller is also described.

Nelms, R. Mark↗