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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2024

ARC-SAFE: Accelerated Response semiconducting Contactors and Surge Attenuation For DC Electrical systems (Final Scientific/Technical Report)

The landscape of power transmission and distribution is quickly evolving as more power conversion is done through power electronics and transmitted or distributed at medium voltage direct current (MVDC). As power electronics tend to store less energy and be less resilient to faults than conventional power transformers, a reliable and fast protection against faults is critical to protect power electronics (PE) based infrastructure, especially for medium- and high-voltage applications. This motivates the development of PE based protection circuits to replace slower contemporary electromechanical breakers. In this project a novel PE based MVDC circuit breaker is developed; the new design is comprised of 1) a normally-on leg made of commercially-available, cascaded SiC junction field effect transistors (JFETs) with a passive balancing network, and 2) a normally-off leg based on an optically-triggered gallium nitride (GaN) photoconductive semiconductor switch (PCSS). The normally-off leg was designed to be quickly turned on, to divert current to an auxiliary dissipative circuit, as the normally-on leg is turned off. This approach, using solid-state devices, was selected for a high-performance, fast-switching operation for the DC circuit breaker as compared to approaches that use slower mechanical switches. To be practical, the circuit breaker must have low conduction loss (low Ron) in the normally-on leg and fast coordinated triggering of the normally-off leg to avoid damage from inductive flyback, which could be considerable for long lengths of cable.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Advanced Electron Microscopy of Nanophased Synthetic Polymers and Soft Complexes for Energy and Medicine Applications

After decades of developments, electron microscopy has become a powerful and irreplaceable tool in understanding the ionic, electrical, mechanical, chemical, and other functional performances of next-generation polymers and soft complexes. The recent progress in electron microscopy of nanostructured polymers and soft assemblies is important for applications in many different fields, including, but not limited to, mesoporous and nanoporous materials, absorbents, membranes, solid electrolytes, battery electrodes, ion- and electron-transporting materials, organic semiconductors, soft robotics, optoelectronic devices, biomass, soft magnetic materials, and pharmaceutical drug design. For synthetic polymers and soft complexes, there are four main characteristics that differentiate them from their inorganic or biomacromolecular counterparts in electron microscopy studies: (1) lower contrast, (2) abundance of light elements, (3) polydispersity or nanomorphological variations, and (4) large changes induced by electron beams. Since 2011, the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory has been working with numerous facility users on nanostructured polymer composites, block copolymers, polymer brushes, conjugated molecules, organic–inorganic hybrid nanomaterials, organic–inorganic interfaces, organic crystals, and other soft complexes. This review crystalizes some of the essential challenges, successes, failures, and techniques during the process in the past ten years. It also presents some outlooks and future expectations on the basis of these works at the intersection of electron microscopy, soft matter, and artificial intelligence. Machine learning is expected to automate and facilitate image processing and information extraction of polymer and soft hybrid nanostructures in aspects such as dose-controlled imaging and structure analysis.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evaluation of PbTe and SnTe as Ohmic Contact Layers in CdTe Solar Cell Devices

For solar cells based on CdTe, the choice of a suitable back contact material is limited by CdTe's deep work function. Here, we explored p-type PbTe and SnTe as ohmic contacts to CdTe. These contact layers were grown on single crystal CdTe substrates by molecular beam epitaxy, and the valence band offset between film and substrate was measured using X-ray photoemission spectroscopy. Polycrystalline device structures were also grown by sublimation to assess performance improvements. Doping was achieved in PbTe by thallium incorporation. Only the highest Tl doped PbTe resulted in a desirable band alignment with the CdTe, forming an electron reflector and no hole barrier. Time-resolved photoluminescence measurements also revealed significant photocarrier lifetime improvements for only the highest doped PbTe. Consequentially, devices incorporating the highest doped PbTe layers showed increased power conversion efficiency, primarily from increased fill factor. Doping of the PbTe was measured via Hall effect with variable magnetic field, which was required due to the formation of an n-type parasitic interface layer. To properly interpret the variable field Hall measurements, we derived an expression for the magnetic field-dependent conductivity tensor of an L-valley semiconductor.

anisotropic band valley↗
DOE OSTI2024

Point defects in CdTe and CdSeTe alloy: a first principles investigation with DFT+U

CdTe and its alloy CdSeTe are widely used in optoelectronic devices, such as radiation detectors and solar cells, due to their superior electrical properties. However, the formation of defects and defect complexes in these materials can significantly affect their performance. As a result, understanding the defect formation and recombination processes in CdTe and CdSeTe alloy is of great importance. In recent years, density functional theory (DFT) calculations have emerged as a powerful tool for investigating the properties of defects in semiconductors. In this paper, we use DFT+U calculations to comprehensively study the properties of intrinsic defects as well as extrinsic defects induced by commonly used dopants, such as Cu and group V elements, in CdTe and CdSeTe alloy. This work provides insights into the effects of these defects on the electrical and optical properties of the material.

14 SOLAR ENERGY↗
DOE OSTI2022

Predicting Solar Cell Performance from Terahertz and Microwave Spectroscopy

Abstract Mobilities and lifetimes of photogenerated charge carriers are core properties of photovoltaic materials and can both be characterized by contactless terahertz or microwave measurements. Here, the expertise from fifteen laboratories is combined to quantitatively model the current‐voltage characteristics of a solar cell from such measurements. To this end, the impact of measurement conditions, alternate interpretations, and experimental inter‐laboratory variations are discussed using a (Cs,FA,MA)Pb(I,Br) 3 halide perovskite thin‐film as a case study. At 1 sun equivalent excitation, neither transport nor recombination is significantly affected by exciton formation or trapping. Terahertz, microwave, and photoluminescence transients for the neat material yield consistent effective lifetimes implying a resistance‐free JV‐curve with a potential power conversion efficiency of 24.6 %. For grainsizes above ≈20 nm, intra‐grain charge transport is characterized by terahertz sum mobilities of ≈32 cm 2 V −1 s −1 . Drift‐diffusion simulations indicate that these intra‐grain mobilities can slightly reduce the fill factor of perovskite solar cells to 0.82, in accordance with the best‐realized devices in the literature. Beyond perovskites, this work can guide a highly predictive characterization of any emerging semiconductor for photovoltaic or photoelectrochemical energy conversion. A best practice for the interpretation of terahertz and microwave measurements on photovoltaic materials is presented.

14 SOLAR ENERGY↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
DOE OSTI2022

Asymmetric side-chain engineering in semiconducting polymers: a platform for greener processing and post-functionalization of organic electronics

Organic semiconducting polymers are a powerful platform for the design of next-generation technologies due to their excellent optoelectronic properties and solution processability, allowing access to low-cost and scalable manufacturing techniques such as spin-coating, slot-die coating and roll-to-roll printing. However, their extended π-conjugation results in low solubility, requiring the use of toxic halogenated solvents to generate thin films and devices. Furthermore, accessible post-functionalization of semiconductors toward the development of multifunctional devices and sensors remains a challenge due to limited solid-state chemistry for alkyl side chains. In this work, an asymmetric side-chain engineering approach was used to introduce terminal hydroxyl moieties alongside traditional solubilizing branched alkyl chains into an isoindigo-based polymer. The hydroxyl moieties led to significantly improved processability in alcohol-based solvents without sacrificing electronic performance in thin film organic field-effect transistors. Solid state morphologies of the thin films processed from both alcohol-based and traditional halogenated solvents were further characterized using atomic force microscopy and grazing incidence wide angle X-ray scattering. Additionally, Cryo-EM was utilized in order to characterize the role of asymmetric side-chain functionality in solution state aggregation. The versatility of this design was further probed using fluorescein isothiocyanate to directly functionalize the asymmetric polymer in thin film. Furthermore, this facile solid-state post-functionalization further demonstrates asymmetric side-chain engineering to be a viable approach toward the development of sustainably manufactured multifunctional electronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗
DOE OSTI2024

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors

Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm −1 K −1 at 298° K, compared to BSO's 3.29 Wm −1 K −1 ). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 V pp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion

Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.

Chen, Siwei [Department of Mechanical Engineering ↗
DOE OSTI2020

Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm

In this study, the interband GaSb-based diode lasers emitting simultaneously in two narrow bands separated by either ~1.6 or ~3.3 THz were designed, fabricated and characterized. The device active region contained one asymmetric tunnel-coupled double quantum well with separation between two lowest electron subbands controlled by thickness of the tunnel barrier. The Y-branch 6th order distributed Bragg reflector devices have been fabricated with either deep or shallow etched ridge waveguides. The increase of the deeply etched ridge waveguide width from 10 to 20 μm improved laser threshold and efficiency thanks to reduction of the relative role of the sidewall defect recombination. Further improvement of the device performance parameter was achieved by shallow etching. The shallow etched lasers with stable dual-wavelength emission spectrum generated 100 mW of continuous wave output power at 20 °C

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams

Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.

MOSFET↗
DOE OSTI2022

GaN HEMT Fabrication for Radiation-Hardened Sensing and Communications Electronics

Gallium nitride (GaN), a wide bandgap semiconductor, has vast potential to address two environment conditions associated with the application of electronics to nuclear power: elevated temperatures, and high levels of radiation. A process was developed at The Ohio State University (OSU) to enable fabrication of complex digital and analog electronics circuits for application to nuclear power environments such as locations near or in the reactor core or in spent nuclear fuel casks. Radio frequency (RF)-grade GaN high electron mobility transistor (HEMT) devices were fabricated as part of this process. These were fabricated as depletion mode and enhancement mode devices. They have been electrically characterized and have demonstrated the expected performance. Behavioral models (Verilog-A) were developed from these device measurements to enable electrical simulation of GaN HEMT devices and circuits using common electronics simulation tools based on Simulation Program with Integrated Circuit Emphasis (SPICE). A similar set of GaN HEMT devices is being developed to provide lower speed devices for logic and analog functions. These accomplishments position this technology for effective application to sensor interfacing, signal processing, and data communications in nuclear power plants, including operation in or near the reactor core.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2020

Pulsed studies of intervalley transfer in Al 0.35 In 0.65 As: A paradigm for valley photovoltaics

Al 0.35 In 0.65 As is a direct semiconductor whose multivalley conduction-band structure has been proposed for use in so-called valley photovoltaics. In such hot-carrier solar cells, energetic (hot) photocarriers are stored in satellite valleys away from the Γ point, allowing them to be extracted prior to thermalization and to thereby increase power-conversion efficiency. While prior theoretical work has highlighted the potential of Al 0.35 In 0.65 As—a widely used barrier material in electronic and optoelectronic devices, for use in valley photovoltaics—surprisingly little is known about its electrical properties, especially how these are impacted by the application of high fields. In this work, we therefore undertake a detailed characterization of the electrical properties of Te-doped ($\textit{n}$-type) Al 0.35 In 0.65 As, over wide ranges of temperature (3–400 K) and electric field (<50 kV/cm). Using pulsed measurements to suppress the influence of Joule heating, we reveal the presence of clear negative-differential conductance in the current-voltage characteristics of the films, suggestive of the intervalley transfer of hot electrons. This conclusion is supported by the results of ensemble Monte Carlo simulations of the hot-carrier action, which confirm the connection of the observed negative-differential conductance to hot-electron transfer from the conduction-band (Γ) minimum, to the side valleys at the $\textit{L}$ point. Further, the quantitative features of the experimentally determined velocity-field curves are found to be in good agreement with the results of these calculations, providing further confidence in the role of the implied intervalley transfer mechanism. Overall, these results confirm the excellent potential of Al 0.35 In 0.65 As for use as the absorber material in hot-carrier solar cell technology.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Integration Methods for High-Density Integrated Electric Drives (Final Technical Report)

The project goal was to research, design and fabricate high-power-density, high-performance SiC power electronic modules for motor drive inverters in electric vehicles (EVs) to enable the subsequent motor drive to achieve a power density of 100 kW/l. EVs use electric motors instead of internal combustion engines as the prime mover, and their core components are semiconductor-based power electronic modules. Efficient power electronic modules play a vital role in power conversion systems. The performance of power modules directly affects the energy efficiency and overall performance of electric vehicles. Therefore, it is particularly important to develop power modules with high power density and high electrical performance that will perform reliably under EV environmental conditions. To achieve these goals, advanced electronic packaging technologies are required. This report describes a 5-year effort to integrate key aspects surrounding the basic power devices into the module itself to increase power density. These include sensing and sensing readout circuits, gate driver circuits, and two-sided cooling solutions.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Transformer coupled toroidal wave-heated remote plasma sources operating in Ar/NF 3 mixtures

Remote plasmas are used in semiconductor device manufacturing as sources of radicals for chamber cleaning and isotropic etching. In these applications, large fluxes of neutral radicals (e.g. F, O, Cl, H) are desired with there being negligible fluxes of potentially damaging ions and photons. One remote plasma source (RPS) design employs toroidal, transformer coupling using ferrite cores to dissociate high flows of moderately high pressure (up to several Torr) electronegative gases. In this paper, results are discussed from a computational investigation of moderate pressure, toroidal transformer coupled RPS sustained in Ar and Ar/NF 3 mixtures. Operation of the RPS in 1 Torr (133 Pa) of argon with a power of 1.0 kW at 0.5 MHz and a single core produces a continuous toroidal plasma loop with current continuity being maintained dominantly by conduction current. Operation with dual cores introduces azimuthal asymmetries with local maxima in plasma density. Current continuity is maintained by a mix of conduction and displacement current. Operation in NF 3 for the same conditions produces essentially complete NF 3 dissociation. Electron depletion as a result of dissociative attachment of NF 3 and NF x fragments significantly alters the discharge topology, confining the electron density to the downstream portion of the source where the NFx density has been lowered by this dissociation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

A first test of CUPID prototypal light detectors with NTD-Ge sensors in a pulse-tube cryostat

CUPID is a next-generation bolometric experiment aiming at searching for neutrinoless double-beta decay with ~250 kg of isotopic mass of 100 Mo. It will operate at ~10 mK in a cryostat currently hosting a similar-scale bolometric array for the CUORE experiment at the Gran Sasso National Laboratory (Italy). CUPID will be based on large-volume scintillating bolometers consisting of 100 Mo-enriched Li 2 MoO 4 crystals, facing thin Ge-wafer-based bolometric light detectors. In the CUPID design, the detector structure is novel and needs to be validated. In particular, the CUORE cryostat presents a high level of mechanical vibrations due to the use of pulse tubes and the effect of vibrations on the detector performance must be investigated. In this paper we report the first test of the CUPID-design bolometric light detectors with NTD-Ge sensors in a dilution refrigerator equipped with a pulse tube in an above-ground lab. Light detectors are characterized in terms of sensitivity, energy resolution, pulse time constants, and noise power spectrum. Despite the challenging noisy environment due to pulse-tube-induced vibrations, we demonstrate that all the four tested light detectors comply with the CUPID goal in terms of intrinsic energy resolution of 100 eV RMS baseline noise. Indeed, we have measured 70–90 eV RMS for the four devices, which show an excellent reproducibility. We have also obtained high energy resolutions at the 356 keV line from a 133 Ba source, as good as Ge semiconductor γ detectors in this energy range.

47 OTHER INSTRUMENTATION↗