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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗

Bidirectional dc-to-dc Power Converter

Solid-state, series-resonant converter uses high-voltage thyristors. Converter used either to convert high-voltage, low-current dc power to lowvoltage, high current power or reverse. Taking advantage of newly-available high-voltage thyristors to provide better reliability and efficiency than traditional converters that use vacuum tubes as power switches. New converter essentially maintenance free and provides greatly increased mean time between failures. Attractive in industrial applications whether or not bidirectional capability is required.

Griesbach, C. R.↗

Integrating aerodynamic surface modeling for computational fluid dynamics with computer aided structural analysis, design, and manufacturing

This presentation will discuss the development of a NASA Geometry Exchange Specification for transferring aerodynamic surface geometry between LeRC systems and grid generation software used for computational fluid dynamics research. The proposed specification is based on a subset of the Initial Graphics Exchange Specification (IGES). The presentation will include discussion of how the NASA-IGES standard will accommodate improved computer aided design inspection methods and reverse engineering techniques currently being developed. The presentation is in viewgraph format.

Thorp, Scott A.↗

Flow downstream of the heliospheric terminal shock - The magnetic field on the heliopause

Modeling the kinematic magnetic field in the solar wind beyond the terminal shock shows that a ridge of magnetic pressure is produced just inside the heliopause. This ridge is sufficiently large that it will cause the layer immediately inside the heliopause to thicken, pushing the heliopause outward and slightly affecting its position relative to the terminal shock. However, the ridge is far too thin to cause an important change in the distance of the terminal shock from the sun. We show that these conclusions are a simple consequence of geometrical arguments for incompressible, steady, laminar flows. Moreover, the heliopause magnetic field originates on the terminal shock near the substagnation point. Consequently, the heliospheric current sheet field reversals are painted onto the inside surface of the heliopause. Alternate magnetic polarity strips will be oppositely directed relative to the interstellar magnetic field, implying that reconnection inevitably occurs on a fine some near the nose of the heliosphere. This suggests that the heliopause is a leaky, diffuse surface.

Nerney, Steven↗

Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Ringel, S. A.↗

The roles of vertical mixing, solar radiation, and wind stress in a model simulation of the sea surface temperature seasonal cycle in the tropical Pacfic Ocean

The climatological seasonal cycle of sea surface temperature (SST) in the tropical Pacific is simulated using a newly developed upper ocean model. The roles of vertical mixing, solar radiation, and wind stress are investigated in a hierarchy of numerical experiments with various combinations of vertical mixing algorithms and surface-forcing products. It is found that the large SST annual cycle in the eastern equatorial Pacific is, to a large extent, controlled by the annually varying mixed layer depth which, in turn, is mainly determined by the competing effects of solar radiation and wind forcing. With the application of our hybrid vertical mixing scheme the model-simulated SST annual cycle is much improved in both amplitude and phase as compared to the case of a constant mixed layer depth. Beside the strong effects on vertical mixing, solar radiation is the primary heating term in the surface layer heat budget, and wind forcing influences SST by driving oceanic advective processes that redistribute heat in the upper ocean. For example, the SST seasonal cycle in the western Pacific basically follows the semiannual variation of solar heating, and the cycle in the central equatorial region is significantly affected by the zonal advective heat flux associated with the seasonally reversing South Equatorial Current. It has been shown in our experiments that the amount of heat flux modification needed to eliminate the annual mean SST errors in the model is, on average, no larger than the annual mean uncertainties among the various surface flux products used in this study. Whereas a bias correction is needed to account for remaining uncertainties in the annual mean heat flux, this study demonstrates that with proper treatment of mixed layer physics and realistic forcing functions the seasonal variability of SST is capable of being simulated successfully in response to external forcing without relying on a relaxation or damping formulation for the dominant surface heat flux contributions.

Chen, Dake↗

Effects of Plasma Hydrogenation on Trapping Properties of Dislocations in Heteroepitaxial InP/GaAs

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approx. 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogen passivation. It is further shown that the "apparent" activation energies of dislocation related deep levels, before and after passivation, reduce by approx. 70 meV as DLTS fill pulse times are increased from 1 usec. to 1 msec. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Ringel, S. A.↗

Thermoelectric Products

Instead of bulky coils and compressors used in conventional refrigeration systems, UST design engineers drew on thermo-electric technology. UST's precision temperature chambers (PTC's) feature small thermoelectric modules that measure not much more than 1 square inch and operate on unique phenomenon of heat exchange. When electric current flows through specialized metallic crystals, heat is produced; when current direction is reversed cooling is produced.

Source record↗

Recent advances in the treatment of orthostatic hypotension

Orthostatic hypotension is a fall in blood pressure on standing that causes symptoms of dizziness, visual changes, and discomfort in the head and neck. The goal of treatment is the improvement of the patient's functional capacity, rather than a target blood pressure. For treatment to be successful, it must be individualized. Non-pharmalogic interventions include carefully managed exercise, scheduled activities, and monitoring of the environmental temperature. Agents such as fludrocortisone, midodrine, and epoetin alfa offer successful pharmacologic interventions. Although these measures ease the symptoms of orthostatic hypotension, current approaches neither reverse nor stabilize the disease process in autonomic disorders.

Review↗

Preliminary Experimental Measurements for a Gallium Electromagnetic (GEM) Thruster

A low-energy gallium plasma source is used to perform a spatially and temporally broad spectroscopic survey in the 220-520 nm range. Neutral, singly, and doubly ionized gallium are present in a 20 J, 1.8 kA (peak) arc discharge operating with a central cathode. When the polarity of the inner electrode is reversed the discharge current and arc voltage waveforms remain similar. Utilizing a central anode configuration, multiple Ga lines are absent in the 270-340 nm range. In addition, neutral and singly ionized Fe spectral lines are present, indicating erosion of the outer electrode. With graphite present on the insulator to facilitate breakdown, line emission from the gallium species is further reduced and while emissions from singly and doubly ionized carbon atoms and molecular carbon (C2) radicals are observed. These data indicate that a significant fraction of energy is shifted from the gallium and deposited into the various carbon species.

Thomas, Robert E.↗

External Dependencies-Driven Architecture Discovery and Analysis of Implemented Systems

A method for architecture discovery and analysis of implemented systems (AIS) is disclosed. The premise of the method is that architecture decisions are inspired and influenced by the external entities that the software system makes use of. Examples of such external entities are COTS components, frameworks, and ultimately even the programming language itself and its libraries. Traces of these architecture decisions can thus be found in the implemented software and is manifested in the way software systems use such external entities. While this fact is often ignored in contemporary reverse engineering methods, the AIS method actively leverages and makes use of the dependencies to external entities as a starting point for the architecture discovery. The AIS method is demonstrated using the NASA's Space Network Access System (SNAS). The results show that, with abundant evidence, the method offers reusable and repeatable guidelines for discovering the architecture and locating potential risks (e.g. low testability, decreased performance) that are hidden deep in the implementation. The analysis is conducted by using external dependencies to identify, classify and review a minimal set of key source code files. Given the benefits of analyzing external dependencies as a way to discover architectures, it is argued that external dependencies deserve to be treated as first-class citizens during reverse engineering. The current structure of a knowledge base of external entities and analysis questions with strategies for getting answers is also discussed.

Ganesan, Dharmalingam↗

Toroidal Field Reversing Switch

A motor-driven, high-current switch is being designed by Stäubli Electrical Connectors in collaboration with Princeton Plasma Physics Laboratory to reverse the DIII-D Toroidal field coil current. The existing field reversing procedure requires approximately 4 h of labor performed between run days to reconfigure the bus work, thus requiring a separate run day to complete experimental scans with both field directions. This typically results in different wall conditions which complicate the results or make them invalid. The proposed switch will complete the reversal process in approximately 4-5 min, between shots, so that wall conditions are not a factor, and easily fits within the 10-12 min DIII-D shot cycle. The switch is a compact design fitting into a 157.5 × 41 cm envelope. The switch uses two copper pins that slide between Stäubli MULTILAM contacts. The switch is rated for total current of 180-kA dc for 10 s with a 12-min repetition rate; the maximum operating coil current is 124-kA dc. The switch diagnostics include: voltage drop, current monitor, thermal monitors, position sensors, and motor torque. Here, the switch is rated for 300 cycles per year, and 3000 cycles overall before contact replacement, with contact inspection yearly. The design details and operation of the switch are covered in this article.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Effect of Mechanical Stresses on Characteristics of Chip Tantalum Capacitors

The effect of compressive mechanical stresses on chip solid tantalum capacitors is investigated by monitoring characteristics of different part types under axial and hydrostatic stresses. Depending on part types, an exponential increase of leakage currents was observed when stresses exceeded 10 MPa to 40 MPa. For the first time, reversible variations of leakage currents (up to two orders of magnitude) with stress have been demonstrated. Mechanical stresses did not cause significant changes of AC characteristics of the capacitors, whereas breakdown voltages measured during the surge current testing decreased substantially indicating an increased probability of failures of stressed capacitors in low impedance applications. Variations of leakage currents are explained by a combination of two mechanisms: stress-induced scintillations and stress-induced generation of electron traps in the tantalum pentoxide dielectric.

Teverovsky, Alexander A.↗

Rocket plume base heating methodology

A review of radiative transport calculation methods for base heating is presented followed by a description of the current methodology for the Space Shuttle plume radiation predictions and improvements for the Advanced Solid Rocket Booster (ASRB). The calculation methods include empirical methods, the SIRRM code and the forward and reverse Monte Carlo methods. Current plume radiation methods include those used for the Space Shuttle Main Engines and the Solid Rocket Booster (SRB). Methods being developed for the ASRB include changes in plume property prediction methodology and application of the reverse Monte Carlo method in predicting plume radiation models. Results of the prediction methods are compared with experimental measurements on the current SRB and on 1/6-scale motors using both SRB and ASRB propellants. Examples are also presented demonstrating the statistical results available with the reverse Monte Carlo method.

Reardon, John E.↗

Negative-ion formation in the explosives RDX, PETN, and TNT using the Reversal Electron Attachment Detection (READ) technique

In the search for high sensitivity and direct atmospheric sampling of trace species, techniques have been developed such as atmospheric-sampling, glow-discharge ionization (ASGDI), corona discharge, atmospheric pressure ionization (API), electron-capture detection (ECD), and negative-ion chemical ionization (NICI) that are capable of detecting parts-per-billion to parts-per-trillion concentrations of trace species. These techniques are based on positive- or negative-ion formation via charge-transfer to the target, or electron capture under multiple-collision conditions in a Maxwellian distribution of electron energies at the source temperature. One drawback of the high-pressure, corona- or glow-discharge devices is that they are susceptible to interferences either through indistinguishable product masses, or through undesired ion-molecule reactions. The ASGDI technique is relatively immune from such interferences, since at target concentrations of less than 1 ppm the majority of negative ions arises via electron capture rather than through ion-molecule chemistry. A drawback of the conventional ECD, and possibly of the ASGDI, is that they exhibit vanishingly small densities of electrons with energies in the range 0-10 millielectron volts (meV), as can be seen from a typical Maxwellian electron energy distribution function at T = 300 K. Slowing the electrons to these subthermal (less than 10 meV) energies is crucial, since the cross section for attachment of several large classes of molecules is known to increase to values larger than 10(exp -12) sq cm at near-zero electron energies. In the limit of zero energy these cross sections are predicted to diverge as epsilon(exp -1/2), where epsilon is the electron energy. In order to provide a better 'match' between the electron energy distribution function and attachment cross section, a new concept of attachment in an electrostatic mirror was developed. In this scheme, electrons are brought to a momentary halt by reversing their direction with electrostatic fields. At this turning point the electrons have zero or near-zero energy. A beam of target molecules is introduced, and the resultant negative ions extracted. This basic idea has been recently improved to allow for better reversal geometry, higher electron currents, lower backgrounds, and increased negative-ion extraction efficiency. We present herein application of the so-called reversal electron attachment detector (READ) to the study of negative-ion formation in the explosives molecules RDX, PETN, and TNT under single-collision conditions.

Chutijian, Ara↗

Non-volatile, solid state bistable electrical switch

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Williams, Roger M.↗