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At least 235 records · Page 13

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NASA NTRS1991

Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors

Plasma-deposited germanium nitride was investigated for the first time as a possible gate insulator for InP compound semiconductor metal-insulator-semiconductor FET (MISFET) technology. The germanium nitride films were successfully deposited in a capacitively coupled parallel plate reactor at 13.56 MHz operation using GeH4/N2/NH3 and GeH4/N2 mixtures as reactant gases. The former process produced better quality films with enhanced uniformity, increased deposition rates, and increased resistivity. The breakdown field strength of the films was greater than 10 to the 6th V/cm. Auger electron spectroscopy did not indicate significant chemical composition differences between the two processes. For MISFETs with 2-micron channel lengths fabricated on InP, the device transconductance and threshold voltage for the GeH4/N2/NH3 process were 17 mS/mm and -3.6 V, respectively. The drain-source breakdown voltages were greater than 10 V.

Johnson, Gregory A.↗

NASA NTRS1991

Squeezed photon-number noise and sub-Poissonian electrical partition noise in a semiconductor laser

Amplitude noise on the light from a semiconductor laser produced a photocurrent fluctuation spectrum that was a maximum of 85 percent (-8.3 dB) below the shot-noise limit. Squeezing in semiconductor lasers is not limited by the overall quantum, or current transfer, efficiency from the laser injection current to the detector photocurrent. Current leakage away from the lasing junction does not introduce Poissonian partition noise.

Richardson, W. H.↗

NASA NTRS1991

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗

NASA NTRS1991

Intelligent monitoring and control of semiconductor manufacturing equipment

The use of AI methods to monitor and control semiconductor fabrication in a state-of-the-art manufacturing environment called the Rapid Thermal Multiprocessor is described. Semiconductor fabrication involves many complex processing steps with limited opportunities to measure process and product properties. By applying additional process and product knowledge to that limited data, AI methods augment classical control methods by detecting abnormalities and trends, predicting failures, diagnosing, planning corrective action sequences, explaining diagnoses or predictions, and reacting to anomalous conditions that classical control systems typically would not correct. Research methodology and issues are discussed, and two diagnosis scenarios are examined.

Murdock, Janet L.↗

NASA NTRS1991

The 1.083 micron tunable CW semiconductor laser

A tunable CW laser is desired to produce light equivalent to the helium spectral line at 1.08 microns. This laser will serve as an optical pumping source for He-3 and He-4 atoms used in space magnetometers. This light source can be fabricated either as a semiconductor laser diode or a pumped solid state laser. Continuous output power of greater than 10 mW is desired. Semiconductor lasers can be thermally tuned, but must be capable of locking onto the helium resonance lines. Solid state lasers must have efficient pumping sources suitable for space configuration. Additional requirements are as follows: space magnetometer applications will include low mass (less than 0.5 kg), low power consumption (less than 0.75 W), and high stability/reliability for long missions (5-10 years).

Wang, C. S.↗

NASA NTRS1993

Self-collimated unstable resonator semiconductor laser

Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror M sub 1 and a small convex mirror M sub 2 on opposite surfaces of a semiconductor body of a material having an effective index of refraction denoted by n, where the respective mirror radii R sub 1, R sub 2 and beam radii r sub 1, r sub 2 are chosen to satisfy a condition (R sub 2)/(1 + r sub 1) = (n - 1)/n, with a value of geometric magnification 1 less than or equal to M less than or equal to (n + 1)/(n - 1) where r sub 1 and r sub 2 are the radii of counterpropagating beams at respective mirrors of radii R sub 1 and R sub 2.

Lang, Robert J.↗

NASA NTRS1993

A semiconductor bridge ignited hot gas piston ejector

The topics are presented in viewgraph form and include the following: semiconductor bridge technology (SCB); SCB philosophy; technology transfer; simplified sketch of SCB; SCB processing; SCB design; SCB test assembly; 5 mJ SCB burst based on a polaroid photograph; micro-convective heat transfer hypothesis; SCB fire set; comparison of SCB and hot-wire actuators; satellite firing sets; logic fire set; SCB smart component; SCB smart firing set; semiconductor design considerations; and the adjustable actuator system.

Grubelich, M. C.↗

NASA NTRS1993

Rapid Thermal Processing (RTP) of semiconductors in space

The progress achieved on the project entitled 'Rapid Thermal Processing of Semiconductors in Space' for a 12 month period of activity ending March 31, 1993 is summarized. The activity of this group is being performed under the direct auspices of the ROMPS program. The main objective of this program is to develop and demonstrate the use of advanced robotics in space with rapid thermal process (RTP) of semiconductors providing the test technology. Rapid thermal processing is an ideal processing step for demonstration purposes since it encompasses many of the characteristics of other processes used in solid state device manufacturing. Furthermore, a low thermal budget is becoming more important in existing manufacturing practice, while a low thermal budget is critical to successful processing in space. A secondary objective of this project is to determine the influence of microgravity on the rapid thermal process for a variety of operating modes. In many instances, this involves one or more fluid phases. The advancement of microgravity processing science is an important ancillary objective.

Anderson, T. J.↗

NASA NTRS1993

Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sintering

Contact formation to InP is plagued by the violent metal-semiconductor intermixing that takes place during the contact sintering process. We have discovered a truly unique contact system, involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

Weizer, Victor G.↗

NASA NTRS1992

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI2 and II-IV-V2 semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI2 and II-IV-V2 compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice-matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V2 compounds and group IV elements are realized, II-IV-V2 alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗

NASA NTRS1993

Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately, Y1Ba2Cu3O(7-delta) superconducting quantum interference devices utilizing both biepitaxial and step-edge Josephson junctions. Both semiconductor and superconductor devices were operated at 77 K. The cofabrication of devices using these disparate yet complementary electronic technologies on the same substrate opens the door for the fabrication of true semiconductive/superconductive hybrid integrated circuits capable of exploiting the best features of each of these technologies.

Burns, M. J.↗

NASA NTRS1994

Sensor Detects Semiconductor Escaping From Ampoule

Sensor detects breakage of ampoule containing molten semiconductor. Chemical reaction between hot semiconductor material and wire causes step increase in electrical resistance and temperature of wire. Because of step increase in resistance, sensor regarded as operating in simple on/off mode used to shut down crystal-growth furnaces automatically. Sensor incorporated into cartridge in various ways; affixed to outer wall of ampoule or to inner wall of cartridge by mechanical mounting or by vapor deposition.

Watring, Dale A.↗

NASA NTRS1993

Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI(sub 2) and II-IV-V(sub 2) semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI(sub 2) and II-IV-V(sub 2) compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP, or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V(sub 2) compounds and group IV elements are realized, II-IV-V(sub 2) alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

Bachmann, Klaus J.↗

NASA NTRS1994

Optical processing for semiconductor device fabrication

A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

Sopori, Bhushan L.↗

NASA NTRS1994

Modes in light wave propagating in semiconductor laser

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Manko, Margarita A.↗

NASA NTRS1994

Circular electrode geometry metal-semiconductor-metal photodetectors

The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

Mcaddo, James A.↗

NASA NTRS1995

Circular electrode geometry metal-semiconductor-metal photodetectors

Mcadoo, James A.↗

NASA NTRS1998

Testing and Further Development of Improved Etches and Etching Methods for the Analysis of Bridgman Grown Semiconductor Crystals with an Emphasis on Lead-Tin-Telluride

The goals outlined for the research project for this year have been completed, and the following supporting documentation is attached: 1. A copy of the proposal outlining the principal goals: (a) Improve the characterization of semiconductor crystals through new etches and etching procedures. (b) Developed a novel voltammetric method to characterize semiconductor crystals as a result of searching for improved etches for lead-tin-telluride. (c) Presented paper at ACCG- 10. (d) Prepared manuscripts for publication. Completed additional testing suggested by reviewers and re-submitted manuscripts. (e) Worked with an undergraduate student on this project to provide her an opportunity to have a significant research experience prior to graduation. 2. In addition to the anticipated goals the following were also accomplished: (a) Submitted the newly developed procedures for consideration as a patent or a NASA Tech Brief. (b) Submitted a paper for presentation at the forthcoming ICCG- 12 conference. 3. A copy of the final draft of the publication as submitted to the editors of the Journal of Crystal Growth.

Barber, Patrick G.↗