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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Tuning interfacial spin filters from metallic to resistive within a single organic semiconductor family
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Carrier-controlled anomalous Hall effect in an intrinsic ferromagnetic semiconductor
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Heitler-London model for acceptor-acceptor interactions in doped semiconductors
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Atomically thin MoS2: a new direct-gap semiconductor
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Origin of the Variation of Exciton Binding Energy in Semiconductors
Abstract not provided
Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe
Abstract not provided
Direct Measurement of Lattice Dynamics and Optical Phonon Excitation in Semiconductor Nanocrystals Using Femtosecond Stimulated Raman Spectroscopy
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Direct Time-Domain View of Auger Recombination in a Semiconductor
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Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe
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Antidoping in Insulators and Semiconductors Having Intermediate Bands with Trapped Carriers
Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were sporadically recorded in different materials without noting the mechanism: electron doping was observed to cause a portion of the lowest unoccupied band to merge into the valance band, leading to a decrease in conductivity. This behavior, that we dub as “antidoping,” was seen in rare-earth nickel oxides SmNiO 3 , cobalt oxides SrCoO 2.5 , Li-ion battery materials, and even MgO with metal vacancies. We describe the physical origin of antidoping as well as its inverse problem—the “design principles” that would enable an intelligent search of materials. We find that electron antidoping is expected in materials having preexisting trapped holes and is caused by the annihilation of such “hole polarons” via electron doping. Finally, this may offer an unconventional way of controlling conductivity.
Compound Semiconductor Photonic Integrated Circuits at Sandia National Laboratories.
Abstract not provided.
Compound Semiconductor Integrated Photonics for Avionics.
Abstract not provided.