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Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.
Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with the currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems are useful in providing lightweight insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.
A prototype 700 GHz subharmonically pumped superconductor-insulator-superconductor (SIS) mixer integrated with a tapered slot antenna on a silicon substrate is described. Imaging using integrated SIS-mixer-antenna chips is discussed.
During this period InGaAs and InGaAsP were grown on (100)InP by liquid phase electroepitaxy (LPEE). Results of the epitaxial growth of InGaAs on sputtered quartz masked substrates are presented. The resulting surface morphology can be related to the current density distribution near the edges of a masked pattern. The quaternary InGaAs was grown with compositions corresponding to 1.3 micron and 1.5 micron emission wavelengths. Growth rates were found to be linearly dependent upon current density, and a strong dependence upon composition was noted. These compositions lie in the miscibility gap region of the alloy phase diagram at the 645 C growth temperature. Growths were performed at 685 C to avoid the miscibility gap. Epilayers were characterized by photoluminescence, X-ray diffraction, secondary ion mass spectrometry, and Hall effect measurements. Aluminum oxide was deposited on silicon and InGaAs substrates for the characterization of this material as an insulator in a field effect transistor structure. It was determined that the results did not warrant further work with the deposition from an aluminum isopropoxide source. A metallographic vapor phase epitaxy system installation is nearing completion for use in hybrid III-V semiconductor epilayer growths.
A porous body of fibrous, low density silica-based insulation material is at least in part impregnated with a reactive boron oxide containing borosilicate glass frit, a silicon tetraboride fluxing agent and a molybdenum silicide emittance agent. The glass frit, fluxing agent and emittance agent are separately milled to reduce their particle size, then mixed together to produce a slurry in ethanol. The slurry is then applied to the insulation material and sintered to produce the porous body.
The evolution of reusable surface insulation is described, with attention to the mullite and other aluminosilicates, zirconia, and silicon carbide-coated carbon compositions experimented with in the late 1960s and early 1970s. Evaluation and development concentrated in this period on such aspects of design and material properties as cold soak performance, attachment, shock impingement, surface coating cracks, and tile gap design and heating. In addressing the central problem of heat-shield thermal conductivity, it was found that for a given density, silica fibers had a lower conductivity than those of mullite. This was due to the one-micron, as opposed to 4.7-micron, diameter of the silica fibers, which resulted in smaller pores and therefore less convective and radiative heat transfer. Attention is also given to tile coating materials and the high-temperature processes by which they were applied.
Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.
The development of a new insulation material for heat-shielding advanced reusable entry vehicles is reported. The material, called fibrous refractory composite insulation, is a composite of two ceramic fibers with no additional additives to bond the fibers together; it also includes silicon carbide, an emmittance agent, to improve its optical properties at high temperature. One fiber is a drawn 11-micron-diameter aluminoborosilicate fiber, the other fiber is the silica fiber (microquartz) used in producing silica RSI (reusable surface insulation for the Space Shuttle), which is a blown fiber of 1-3 micron diameter and variable length. A composition containing 20%, with a thermal shock resistance of 1.8 that of all silica insulation, has been successfully produced in a pilot plant.
The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.
An extensive development and testing program on adhesive systems shows that: (1) A closed cell silicone rubber sponge bonded to substrates with thin bond lines of glass filled adhesive exhibits density and modulus values approximately one third that of solid silicone adhesives; (2) utilization of glass or phenolic microballoons as fillers in silicone adhesives reduces density but increases moduli of the vulcanized materials; (3) the silicone elastomer based adhesives appear to be complex systems rather than homogeneous, isotropic materials. Tensile, shear, and compression properties plotted versus temperature verify this conjecture; and (4) constant strain-stress relaxation tests on glass-filled adhesive show that stress relaxation is most pronounced near the glass transition temperature.
Based on fluorination technology developed during 1934 to 1959, and the fiber technology developed during the 1970s, a new process was developed to produce graphite fluoride fibers. In the process, pitch based graphitized carbon fibers are at first intercalated and deintercalated several times by bromine and iodine, followed by several cycles of nitrogen heating and fluorination at 350 to 370 C. Electrical, mechanical, and thermal properties of this fiber depend on the fluorination process and the fluorine content of the graphite fluoride product. However, these properties are between those of graphite and those of PTFE (Teflon). Therefore, it is considered to be a semiplastic. The physical properties suggest that this new material may have many new and unexplored applications. For example, it can be a thermally conductive electrical insulator. Its coefficient of thermal expansion (CTE) can be adjusted to match that of silicon, and therefore, it can be a heat sinking printed circuit board which is CTE compatible with silicon. Using these fibers in printed circuit boards may provide improved electrical performance and reliability of the electronics on the board over existing designs. Also, since it releases fluorine at 300 C or higher, it can be used as a material to store fluorine and to conduct fluorination. This application may simplify the fluorination process and reduce the risk of handling fluorine.
The solar array module plasma interactions experiment is a space shuttle experiment designed to investigate and quantify the high voltage plasma interactions. One of the objectives of the experiment is to test the performance of the Advanced Photovoltaic Solar Array (APSA). The material properties of array blanket are also studied as electric insulators for APSA arrays in high voltage conditions. Three twelve cell prototype coupons of silicon cells were constructed and tested in a space simulation chamber.
Measurement of the minority-carrier mobility in the base region of a high-voltage metal-insulator-N-P solar cell (Green et al., 1984), as well as in other 0.1-ohm cm cells, provides direct proof that the high voltages measured for that cell are due not only to improved emitter characteristics but to an improved base region as well. The base characteristics are shown to be quite sensitive to the effects of diffusion-induced lattice stress originating in the emitter. The implications of these findings for the fabrication of high-efficiency cells are discussed.
Addition of refractory fibers and whiskers to insulating tiles composed primarily of fibrous silica, such as those used on the skin of Space Shuttle orbiter, greatly improves properties. New composition suitable for lightweight, thermally-stable mirror blanks and as furnace and kiln insulation. Improved tiles made with current tile-fabrication processes. For given density, tiles containing silicon carbide and boron additives stronger in flexure than tiles made from silica alone. In addition, tiles with additives nearly immune to heat distortion, whereas pure-silica tiles shrink and become severely distorted.
Spacecraft entering a planetary atmosphere require a very sophisticated thermal protection system. The materials used must be tailored to each specific vehicle based on its planned mission profiles. Starting with the Space Shuttle, many types of ceramic insulation with various combinations of thermal properties have been developed by others. The development of two new materials is described: A Composite Flexible Blanket Insulation which has a significantly lower effective thermal conductivity than other ceramic blankets; and a Silicon Matrix Composite which has applications at high temperature locations such as wing leading edges. Also, a systematic study is described that considers the application of these materials for a proposed Personnel Launch System. The study shows how most of these available ceramic materials would perform during atmospheric entry of this vehicle. Other specific applications of these thermal protection materials are discussed.
Semirigid polyurethane foam is firm enough not to collapse yet soft enough not to crack in extreme cold. Silicone cover retards flames and glass-fabric reinforcement protects foam against accidental damage from tools during installation and maintenance.
We present the results of our measurements of the electron emission properties of selected insulating and conducting materials used on the International Space Station (ISS). Utah State University (USU) has performed measurements of the electron-, ion-, and photon-induced electron emission properties of conductors for a few years, and has recently extended our capabilities to measure electron yields of insulators, allowing us to significantly expand current spacecraft material charging databases. These ISS materials data are used here to illustrate our various insulator measurement techniques that include: i) Studies of electron-induced secondary and backscattered electron yield curves using pulsed, low current electron beams to minimize deleterious affects of insulator charging. ii) Comparison of several methods used to determine the insulator 1st and 2nd crossover energies. These incident electron energies induce unity total yield at the transition between yields greater than and less than one with either negative or positive charging, respectively. The crossover energies are very important in determining both the polarity and magnitude of spacecraft surface potentials. iii) Evolution of electron emission energy spectra as a function of insulator charging used to determine the surface potential of insulators. iv) Surface potential evolution as a function of pulsed-electron fluence to determine how quickly insulators charge, and how this can affect subsequent electron yields. v) Critical incident electron energies resulting in electrical breakdown of insulator materials and the effect of breakdown on subsequent emission, charging and conduction. vi) Charge-neutralization techniques such as low-energy electron flooding and UV light irradiation to dissipate both positive and negative surface potentials during yield measurements. Specific ISS materials being tested at USU include chromic and sulfuric anodized aluminum, RTV-silicone solar array adhesives, solar cell cover glasses, Kapton, and gold. Further details of the USU testing facilities, the instrumentation used for insulator measurements, and the NASA/SEE Charge Collector materials database are provided in other Spacecraft Charging Conference presentations (Dennison, 2003b). The work presented was supported in part by the NASA Space Environments and Effects (SEE) Program, the Boeing Corporation, and a NASA Graduate Fellowship. Samples were supplied by Boeing, the Environmental Effects Group at Marshall Space Flight Center, and Sheldahl, Inc.
X ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) were used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal nitride oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor on insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface.