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Effect of neighboring grain orientation on strain localization in slip bands in HCP materials
Particularly in plastically anisotropic crystals, such as hexagonal close packed (HCP) materials, plastic deformation is realized by slip acting in the small volumes within individual crystals. Here we extend a full field fast Fourier transform (FFT)-based elasto-viscoplastic formulation to simulate the development of a single slip band on either prismatic or basal planes spanning a crystal. Calculations of the strain and stress fields induced locally within the band and parent crystal, and ahead of the band/grain boundary junction in the neighboring crystal are analyzed as the slip band intensifies under increasing applied strain. We report a substantial influence of the crystallographic orientation of the nearest neighboring grain on the rate of slip band localization. Performing the analysis on two materials, CP-Ti and Mg, indicates that the strength of the material affects the rate of localization, with stronger materials tending to localize more easily. A slip band tip stress-based criterion is proposed for identifying the nearest neighbor orientations in which slip band transmission is possible and the likely slip system for which it occurs. This indicator is validated against experimental studies on commercially pure Ti, an Mg–Y alloy, and Ti–6Al–4V. Finally, we show that for low GB misorientations, the slip band is likely to transmit into another slip band of the same type in the neighbor grain, while for high GB misorientations, it is likely to transmit into one of a different type or to not transmit at all.
Effects of Zr addition on lattice strains and electronic structures of NbTaTiV high-entropy alloy
We report the room-temperature (RT) deformation behavior for two single-phase body-centered-cubic (BCC) refractory high-entropy alloys (RHEAs), NbTaTiV and NbTaTiVZr, has been comprehensively investigated via in-situ neutron-diffraction experiments. Our work shows that the addition of Zr leads to the transition of mechanical response from ductile to brittle behavior. The results of lattice-strain evolutions obtained from in-situ neutron diffraction for the ductile NbTaTiV RHEA exhibit atypical plastic-deformation behavior, i.e., the reduced plasticanisotropic deformation, leading to an even distribution of the applied stress amongst the grains with different orientations rather than forming stress concentrations in {200}-oriented grains during plastic-deformation. Density functional theory (DFT) analysis shows that NbTaTiVZr has a lower electron density at the Fermi level, larger lattice distortion, and stronger charge transfer, as compared to NbTaTiV, suggesting higher strength and lower ductility in NbTaTiVZr, which are consistent with the current experimental results.
Combined effects of grain size and strain-rate on the microstructural evolution and twinning in metastable β phase Ti-15Mo (wt.%) under dynamic compression
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The classical-to-quantum crossover in the strain-induced ferroelectric transition in SrTiO3 membranes
Mechanical strain presents an effective control over symmetry-breaking phase transitions. In quantum paralelectric SrTiO3, strain can induce ferroelectric order via modification of the local Ti potential energy landscape. However, brittle bulk materials can only withstand limited strain range (~0.1%). Taking advantage of nanoscopically-thin freestanding membranes, we demonstrate an in- situ strain-induced reversible ferroelectric transition in freestanding SrTiO3 membranes. We measure the ferroelectric order by detecting the local anisotropy of the Ti 3d orbital signature using x-ray linear dichroism at the Ti-K pre-edge, while the strain is determined by x-ray diffraction. With reduced thickness, the SrTiO3 membranes remain elastic with >1% tensile strain cycles. A robust displacive ferroelectricity appears beyond a temperature-dependent critical strain. Interestingly, we discover a crossover from a classical ferroelectric transition to a quantum regime at low temperatures, which enhances strain-induced ferroelectricity. Our results offer new opportunities to strain engineer functional properties in low dimensional quantum materials and provide new insights into the role of ferroelectric fluctuations in quantum paraelectric SrTiO3.
Effect of (001) and (111) epitaxial strain on Pnma perovskite oxides
Not Available
Tailoring the TRIP Effect in Q&P Steels using Strain Rate and Temperature.
Abstract not provided.
Printed Strain Gauges for High Temperature Applications (>300°C)
The real-time understanding of strain and deformation of materials provides prognostic health monitoring of components of current operational reactors and valuable data that shortens the timeline for the development of new nuclear-relevant materials in test reactor experiments. This report discusses the current development and testing of additively manufactured strain gauges. This has potential to improve the sensor design and manufacturing techniques to meet the requirements of the current and advanced nuclear reactors (i.e., in terms of environment conditions, sample geometry, and materials compatibility). The developmental additively manufactured strain gauges are exposed to separate effects testing (i.e., mechanical strain, high temperature) to determine environmental factors that affect the strain gauge. In addition, sensor qualification methodologies are further developed for determining the reliability and robustness at the interface of the AM strain gauge materials.
Orienting Strained Interfaces designed to Direct Energy Flow (Final Technical Report)
This proposal aims to establish a transformative paradigm for oxide heterostructures with an exceptionally large number of interfaces designed to direct energy flow through controlled interface orientation, enabling fast ion transport. A primary focus is on unveiling the key role of interfacial strain in oxygen ion migration at low temperatures. The central challenge is to create, understand, utilize self-assembled vertical heteroepitaxial nanostructures with the goal of obtaining and understanding fast ion transport properties by modulating interfacial strain. The specific objectives are: (1) to synthesize multilayer thin films and vertical heteroepitaxial nanostructures with fluorite Gd-doped CeO 2 (GDC) and bixbyite RE 2 O 3 (RE = Y and Sm), (2) to evaluate the interfacial strain states under various temperatures and ambient conditions, (3) to understand the effect of interfacial strain on ionic conductivity of the proposed nanostructures, (4) to understand the three-dimensional (3D) atomic structure of the proposed material design and interface phenomena at the atomic scale.
Application of printed strain gauges in prototypical nuclear reactor conditions
This report discusses the current development and testing of additively manufactured temperature sensors and resistive/ capacitive strain gauges. This has potential to improve the sensor design and manufacturing techniques to meet the requirements of in-pile monitoring of mechanical properties and structural health of materials and specimens in current and advanced nuclear test reactors (i.e., in terms of environment conditions, sample geometry, and materials compatibility). The developmental additively manufactured strain gauges are exposed to separate effects testing (i.e., mechanical strain (up to 1000 µe), high temperature (up to 700 °C)) to determine environmental factors that affect the performance of the strain gauge. The robustness and integrity of a printed strain gauge layer exposed to a molten salt environment for up to 500 hours was evaluated, with the goal of assessing material compatibility of printed strain sensors for instrumented surveillance test articles in molten salt reactors. In addition, sensor qualification methodologies are further developed for determining the reliability and robustness at the interface of the additively manufactured strain gauge materials.
Strain-Modulated Exciton Localization and Enhanced Emission in Multilayer GaSe
Strain engineering is one of the most effective routes for tuning the electrical and optical properties of two-dimensional layered materials. Besides reproducing the results of other groups on the tunability and photoluminescence (PL) enhancement of free and bound excitons under mechanical deformation or thermal effects, we systematically studied the mechanical strain (wrinkle) and local thermal strain (laser heating) effects on the PL lifetime and polarization in GaSe multilayers and their interplay, revealing their coupled impact on excitonic dynamics. Here, the PL intensity of localized excitons in the wrinkle region of GaSe increases superlinearly with the excitation laser power. The polarization effect has been observed for the bound exciton in GaSe under mechanical strain, but not in GaSe under thermal strain. Fluorescence lifetime imaging (FLIM) measurements reveal strain-tunable lifetimes for both free and bound excitons, and the lifetime of the bound exciton is longer than the free exciton in the mechanical strain region, correlating with the enhanced emission of the bound exciton. These results highlight previously uncharacterized optoelectronic tunability in GaSe and broaden the design space for strain (or thermally)-controlled 2D layered devices.
Enabling room-temperature ferromagnetism in few-layered MoS 2 films via strain engineering
Strain engineering presents a promising pathway for modulating the physical properties of two-dimensional (2D) transition metal dichalcogenides materials. Here, in this study, we investigate the strain-induced magnetic behavior of diamagnetic MoS 2 films prepared by the DC magnetron sputtering technique. By applying +1% tensile strain to few-layered MoS 2 films (∼3.5 nm), we observe the emergence of room-temperature ferromagnetism with a magnetization saturation of about ∼130 emu/cm 3 , in stark contrast to bulk films (∼40 nm), which remain diamagnetic under similar conditions. Raman spectroscopy reveals a pronounced reduction in the intensity and the splitting of the E′ mode in 1% strained few-layered films, indicating a possible bond elongation and symmetry breaking under tensile stress. Additionally, x-ray absorption spectroscopy at the Mo M 3 edge further confirms a strain-induced electronic structure modification in few-layered films, with no corresponding shift observed in bulk counterparts. Moreover, the strain-induced magnetic and structural changes are largely reversible upon strain release. We attribute the origin of ferromagnetism in few-layered films to the combined influence of tensile strain and defect-assisted bond weakening, which facilitates crystal field transitions within the Mo 4d orbitals. These findings demonstrate that strain engineering can effectively induce and modulate magnetism in 2D materials, providing opportunities for developing strain-controlled spintronic applications.
Spontaneous Hall effect enhanced by local Ir moments in epitaxial Pr 2 Ir 2 O 7 thin films
Rare-earth pyrochlore iridates ( RE 2 Ir 2 O 7 ) consist of two interpenetrating cation sublattices, the RE with highly frustrated magnetic moments, and the iridium with extended conduction orbitals significantly mixed by spin-orbit interactions. The coexistence and coupling of these two sublattices create a landscape for discovery and manipulation of quantum phenomena such as the topological Hall effect, massless conduction bands, and quantum criticality. Thin films allow extended control of the material system via symmetry-lowering effects such as strain. While bulk Pr 2 Ir 2 O 7 shows a spontaneous hysteretic Hall effect below 1.5 K, we observe the effect at elevated temperatures up to 15 K in epitaxial thin films on (111) yttria-stabilized zirconia (YSZ) substrates synthesized via solid-phase epitaxy. Similar to the bulk, the lack of observable long-range magnetic order in the thin films points to a topological origin. We use synchrotron-based element-specific x-ray diffraction and x-ray magnetic circular dichroism to compare powders and thin films to attribute the spontaneous Hall effect in the films to localization of the Ir moments. Further, we link the thin-film Ir local moments to lattice distortions absent in the bulklike powders. We conclude that the elevated-temperature spontaneous Hall effect is caused by the topological effect originating either from the Ir or Pr sublattice, with interaction strength enhanced by the Ir local moments. This spontaneous Hall effect with weak net moment highlights the effect of vanishingly small lattice distortions as a means to discover topological phenomena in metallic frustrated magnetic materials.
Experimental determination of energy-level structures of diamond silicon-vacancy centers in off-axis magnetic fields
Here, we report the development of an experimental approach to efficiently determine the energy level structure of an individual silicon vacancy (SiV) center in a magnetic field along an arbitrary direction. This approach uses two coupling rates (one each for the ground and the excited states) to characterize the combined effects of static strain and dynamic Jahn-Teller coupling and exploits the fact that orbital Zeeman effects vanish when the magnetic field is normal to the SiV axis. With an analytical expression for the energy level structure of the SiV under a transverse magnetic field, the two coupling rates can be directly derived from two measurements: one on the frequency separation between two spin-conserved transitions and the other on the coherent population trapping resonance of the SiV ground spin states. A detailed comparison between the numerical calculation and the experimental result on the dependence of the spin-conserved splitting on both the amplitude and direction of the magnetic field further reveals unequal orbital magnetic coupling for the ground and excited states, indicating that unequal orbital quenching factors are needed for an accurate description of the SiV energy level structure in a magnetic field.
The influence of kinematics of deformation on polycrystalline halite dynamic recrystallization: Full-field simulation of simple shear versus pure shear
Rock salt, composed mainly of halite, flows viscoplastically over a wide range of geological conditions, strongly impacting the dynamic evolution of sedimentary basins and orogens. Understanding how dislocation creep, which involves dislocation glide, intracrystalline recovery and dynamic recrystallization, influences the microstructure and rheology of halite under various deformation kinematics and temperatures is crucial for enhancing knowledge of salt flow dynamics. Here, this study employs a full-field numerical simulation method to compare the viscoplastic deformation of polycrystalline halite under simple shear and pure shear conditions up to a natural strain of ε = 1.5 at temperatures ranging from 100 °C to 300 °C. The results are presented in terms of crystallographic preferred orientation (CPO), grain shape preferred orientation (SPO), subgrain boundary direction, grain size and strain rate distribution. The results indicate that the crystallographic anisotropy of individual halite crystals is transferred to the polycrystalline scale, resulting in strain localization, particularly in simple shear simulations. The kinematics of deformation affect the evolution and distribution of high strain-rate bands, determining the direction of intragranular substructures and the morphology of strain-induced grain boundaries, with minimal impact on grain size. The intensity of grain boundary migration increases with temperature, significantly influencing grain morphology and size, thereby obscuring strain localization, while having little effect on CPOs. At low strain (ε < 1.0), CPOs relative to both the maximum shortening direction and the grain SPO are similar regardless of the deformation kinematics. At high strain (ε > 1.0), simple shear CPOs exhibit three stronger {100} maxima with a monoclinic symmetry relative to the grain SPO compared to the six {100} maxima with an orthotropic symmetry relative to the grain SPO generated under pure shear. Therefore, microstructures and CPOs can serve as indicators of the strain path in polycrystalline halite under various conditions, aiding in determining the shear sense and elucidating the deformation kinematics of salt structures.
Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides
Strain engineering can modulate the material properties of two-dimensional (2D) sem- iconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS 2 , a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe the electron mobility in monolayer WS 2 and MoS 2 transistors. Further, this approach experimentally achieves ~2× higher on-state current and mobility with ~0.3% applied biaxial strain in WS 2 , the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering 2D semiconductors for flexible electronics, sensors, integrated circuits, and other opto-electronic applications.
THE DESIGN OF RADIAL HONEYCOMB LATTICES FOR IMPACT ENERGY ABSORPTION IN RADIOACTIVE MATERIALS PACKAGES
In this research we present a variation on the corrugation technique of honeycomb lattices, for cylindrical honeycombs, making them much easier to design for impact energy absorption in radioactive materials packages. This variation, termed radial honeycomb lattices, eliminates the residual strain and saddle effect. The use of honeycomb lattices provides advantages over the typically used foams. While foams are effective at absorbing impact energy, they can burn, their material properties are difficult to control, they can degrade over time, and procurement of raw materials can be dependent on timing of manufacturer batch runs. While the weaknesses of foam are strengths for honeycomb lattices, lattices have a different set of problems. Typically, when cylindrical honeycomb lattices are manufactured, they are manufactured flat, wrapped around a mandrel of the desired radius, and then brazed. This approach introduces residual strains, resulting in the saddle effect, which limits both the radial thickness and cylinder length. The radial honeycomb lattice approach presented here makes the design of thicker and longer cylinder honeycombs possible. To address these issues, we propose a honeycomb lattice which changes in cross-section from the inner to the outer radius of the cylinder. This causes the lattice to automatically wrap into a cylinder as it exits the corrugating gears. The theoretically bounding case, of a square cross-section at the inner radius, transitioning through a hexagon, to a diamond cross-section at the outer radius, results in a maximum thickness of approximately 41% of the inner radius. Full mathematical derivations, implemented in computer code, allow for the design of an entire radial honeycomb lattice, including the corrugating gears. To accomplish this only the radial thickness, inner cross-section shape, cell size, and nominal gear radius need to be specified, making the design of these lattices very efficient. Radial honeycomb lattice prototypes have demonstrated that the honeycomb does indeed wrap into a cylinder as intended, without the saddle effect, and can therefore be used to create thick-walled cylinders of any length. These design improvements make cylindrical honeycomb lattices much more accessible as a design element for radioactive materials packages
Strain-modulated anisotropic electronic structure in superconducting RuO 2 films
The binary ruthenate, RuO 2 , has been the subject of intense interest due to its itinerant antiferromagnetism and strain-induced superconductivity. The strain mechanism and its effect on the microscopic electronic states leading to the normal and superconducting state, however, remain undisclosed. Here, we investigate highly strained epitaxial (110) RuO 2 films using polarization-dependent oxygen K-edge x-ray absorption spectroscopy (XAS). Through the detection of pre-edge peaks arising from O:2p - Ru:4d hybridization, we uncover the effects of epitaxial strain on the orbital/electronic structure near the Fermi level. Our data show robust strain-induced shifts of orbital levels and a reduction of hybridization strength. Furthermore, we reveal a pronounced in-plane anisotropy of the electronic structure along the [110] / [1$\bar{1}$0] directions naturally stemming from the symmetry-breaking epitaxial strain of the substrate. The B 2g symmetry component of the epitaxially enforced strain breaks a sublattice degeneracy, resulting in an increase of the density of states at the Fermi level (E F ), possibly paving the way to superconductivity. Finally, these results underscore the importance of the effective reduction from tetragonal to orthorhombic lattice symmetry in (110) RuO 2 films and its relevance towards the superconducting and magnetic properties.