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This paper reports recent Total Ionizing Dose (TID) test results obtained at JPL. Several device samples were analyzed exhibiting significant failure levels and ELDRS effects under biased and unbiased condition.
The considered investigation is concerned with the study of the total-dose degradation mechanisms in an IIL analog to digital (A/D) converter. The A/D converter is a 10 digit device having nine separate functional units on the chip which encompass several hundred transistors and circuit elements. It was the objective of the described research to find the radiation sensitive elements by a systematic search of the devices on the LSI chip. The employed technique using a scanning electron microscope to determine the functional blocks of an integrated circuit which are sensitive to ionizing radiation and then progressively zeroing in on the soft components within those blocks, proved extremely successful on the AD571. Four functional blocks were found to be sensitive to radiation, including the Voltage Reference, DAC, IIL Clock, and IIL SAR.
The purpose of this testing was to obtain total ionizing dose (TID) information about commercial off-the-shelf (COTS) n-channel and p-channel MOFETs that are being considered for use on the Goddard Modular SmallSat Architecture (GMSA) Adapter board in an H-Bridge circuit to drive magnetorquers. Testing took place at NASA Goddard Space Flight Center’s (GSFC) Radiation Effects Facility using the gamma source. Testing occurred from July 31st – August 1st, 2018.
Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.
The solar storm of May 2024, the Gannon storm, led to a display of aurora over the globe. One of the less known effects of that storm is on the radiation doses in low-Earth orbit: it first led to a Forbush decrease in dose rates and then to a Solar Energetic Particle (SEP) event that increased the total dose suffered near the international space station. The Nowcast of Aerospace Ionizing RAdiation System (NAIRAS) model predicts dosimetric and radiative flux quantities for assessing human radiation exposure levels and radiation effects on flight electronic systems from the surface of the Earth to deep space. It runs in near-real-time at the CCMC, but also has a run-on-request that allows for a more precise computation thanks to carefully processed data. NAIRAS was able to compute the effects of the Gannon storm at the ISS in real-time and provide ideas of the doses encountered by the astronauts and the experiments in and outside of the station. In this work, we show the simulations of the doses encountered during the storm and compare them with several measurements at the ISS. This work shows the capabilities of NAIRAS to address the problem of the SEP events at low Earth orbit and its real-time capabilities.
Special technology and circuit architecture are of growing interest for implementation of circuits which operate at low supply voltages and consume low power levels without sacrificing performance[1]. Use of thin buried oxide SOI substrates is a primary approach to simultaneously achieve these goals. A significant aspect regarding SIMOX SOI for low voltage, low power applications is the reliability and performance of the thin buried oxide. In addition, when subjected to high total dose irradiation, the silicon islands within the BOX layer of SIMOX can store charges and significantly effect the back channel threshold voltages of devices. Thus, elimination of the islands within the buried oxide (BOX) layer is preferred in order to prevent leakage through these conductive islands and charge build-up within the buried oxide layer. A differential (2-step) ramp rate as applied to full and 100 nm BOX SIMOX was previously reported to play a significant role in the stoichiometry and island formation within the buried layer[2]. This paper focus is on the properties of a thin (120nm) buried oxide as a function of the anneal ramp rate and the temperature of anneal. In this research, we have found an improvement in the buried oxide stoichiometry with the use of a slower, singular ramp rate for specified thin buried oxides, with slower ramp rates and higher temperatures of anneal suggested for reducing the presence of Si islands within the BOX layer.
Risk to astronauts due to ionizing radiation exposure is a primary concern for missions beyond Low Earth Orbit (LEO) and will drive mission architecture requirements, mission timelines, and operational practices. For short missions, radiation risk is dominated by the possibility of a large Solar Particle Event (SPE). Longer duration missions have both SPE and Galactic Cosmic Ray (GCR) risks. SPE exposure can contribute significantly toward cancer induction in combination with GCR. As mission duration increases, mitigation strategies must address the combined risks from SPE and GCR exposure. In this paper, full mission exposure assessments were performed for the proposed long duration lunar surface mission scenarios. In order to accomplish these assessments, previously developed radiation shielding models for a proposed lunar habitat and rover were utilized. End-to-End mission exposure assessments were performed by first calculating exposure rates for locations in the habitat, rover, and during Extra-Vehicular Activities (EVA). Subsequently, total mission exposures were evaluated for the proposed timelines. Mission exposure results, assessed in terms of effective dose, are presented for the proposed timelines and recommendations are made for improved astronaut shielding and safer operational practices.
Chromosomal aberrations were measured in human peripheral blood lymphocytes after in vitro exposure to neon ions at energies of 64, 89, 142, or 267. The corresponding LET values for these energies of neon ranged from 38-103 keV/micrometers and doses delivered were in the 10 to 80 cGy range. Chromosome exchanges were assessed in metaphase and G2 phase cells at first division after exposure using fluorescence in situ hybridization (FISH) with whole chromosome probes and dose response curves were generated for different types of chromosomal exchanges. The yields of total chromosome exchanges were similar for the 64, 89, and 142 MeV exposures, whereas the 267 MeV/u neon with LET of 38 keV/micrometers produced about half as many exchanges per unit dose. The induction of complex type chromosome exchanges (exchanges involving three or more breaks and two or more chromosomes) showed a clear LET dependence for all energies. The ratio of simple to complex type exchanges increased with LET from 18 to 51%. The relative biological effectiveness (RBE) was estimated from the initial slope of the dose response curve for chromosome damage with respect to gamma-rays. The RBE(sub max) values for total chromosome exchanges for the 64 MeV/u was around 30.
Despite significant progress understanding biological radiation effects via terrestrial studies, no terrestrial source duplicates space’s unique radiation environment. Furthermore, no biological experiments have been conducted beyond low Earth orbit since Apollo. Understanding space’s fundamental biological effects requires overcoming these limitations. The BioSentinel 4U payload, under development for flight aboard Exploration Mission-1, measures biological responses to deep space radiation. Traveling to more than 1AU from Earth, BioSentinel/EM-1 will record DNA double-strand breaks (DSBs) repaired using a pathway common to humans and BioSentinel’s bioengineered yeast model organism, responding to as few as one biologically repaired DSB. The BioSentinel/Mars 4U instrument (6-8kg; 5-8W; 0.2-1MB/week) would include eighteen 16-well biosensor fluidic cards, activated biweekly during Mars 2020’s cruise phase, to provide a dose-dependent rate of DSB/repair. The instrument, which includes solid-state sensors for total ionizing dose and linear-energy-transfer spectra, addresses MEPAG SKG-B3 by simultaneously measuring both spectra and biological effects of space radiation. Biological measurements are rendered reliable by independent replicate experiments. The spatio-temporal uniformity of interplanetary galactic cosmic radiation makes BioSentinel/EM1 and BioSentinel/Mars approximate replicates, except for any major differences in solar particle events. Results will be compared to Earth and ISS controls to characterize the radiation/reduced-gravity parameter space by its biological impact.
Nonionizing energy loss (NIEL) is a quantity that describes the rate of energy loss due to atomic displacements as a particle traverses a material. The product of the NIEL and the particle fluence (time integrated flux) gives the displacement damage energy deposition per unit mass of material. NIEL plays the same role to the displacement damage energy deposition as the stopping power to the total ionizing dose (TID). The concept of NIEL has been very useful for correlating particle induced displacement damage effects in semiconductor and optical devices. Many studies have successfully demonstrated that the degradation of semiconductor devices or optical sensors in a radiation field can be linearly correlated to the displacement damage energy, and subsequently to the NIEL deposited in the semiconductor devices or optical sensors. In addition, the NIEL concept was also useful in the study of both Si and GaAs solar cells and of high temperature superconductors, and at predicting the survivability of detectors used at the LHC at CERN. On the other hand, there are some instances where discrepancies are observed in the application of NIEL, most notably in GaAs semiconductor devices. However, NIEL is still a valuable tool, and can be used to scale damages produced by different particles and in different environments, even though this is not understood at the microscopic level.
Physiological mechanical loading is crucial for maintenance of bone integrity and architecture. We have calculated the strain caused by gravity stress on osteoblasts and found that 4-30g corresponds to physiological levels of 40-300 microstrain. Short-term gravity loading (15 minutes) induced a 15-fold increase in expression of growth-related immediate early gene c-fos, a 5-fold increase in egr-1, and a 3-fold increase in autocrine bFGF. The non-growth-related genes EP-1, TGF-beta, and 18s were unaffected by gravity loading. Short-term physiological loading induced extracellular signal-regulated kinase (ERK 1/2) phosphorylation in a dose-dependent manner with maximum phosphorylation saturating at mechanical loading levels of 12g (p < 0.001) with no effect on total ERK. The phosphorylation of focal adhesion kinase (FAK) was unaffected by mechanical force. g-Loading did not activate P38 MAPK or c-jun N-terminal kinase (JNK). Additionally, a gravity pulse resulted in the localization of phosphorylated ERK 1/2 to the nucleus; this did not occur in unloaded cells. The induction of c-fos was inhibited 74% by the MEK1/2 inhibitor U0126 (p < 0.001) but was not affected by MEK1 or p38 MAPK-specific inhibitors. The long-term consequence of a single 15-minute gravity pulse was a 64% increase in cell growth (p < 0.001). U0126 significantly inhibited gravity-induced growth by 50% (p < 0.001). These studies suggest that short periods of physiological mechanical stress induce immediate early gene expression and growth in MC3T3-E1 osteoblasts primarily through an ERK 1/2-mediated pathway.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.
Recent enhanced low dose rate sensitivity (ELDRS) investigations carried out by RLP Research, Crane, Arizona State University (ASU), and Jet Propulsion Laboratory (JPL) have shown significant differences in the degradation of bipolar microcircuits with total dose in the presence of molecular hydrogen (H2) in packages. This has a significant impact on radiation hardness assurance and opens up opportunity to improve device performance. The objectives of this program are 1) to investigate and confirm the causal relationship between packaging recipes, hydrogen contamination, and total dose response of linear bipolar microcircuits; and 2) to develop a guideline that will take into account these effects at the radiation level for future NASA space missions. This program is geared to benefit all future NASA space missions using bipolar or BiCMOS linear devices.
Provide overview of Space Radiation Sources, Environments, Interactions with Electronic Devices - Radiation Sources - Solar Energetic Particles (SEP) and Solar Particle Events (SPE) - Galactic Cosmic Rays (GCR) - Radiation Environments - Van Allen belts - Beyond the belts - Reference SLS-SPEC-159 Rev G: Design Specification for Natural Environment (DSNE) - Interactions with Electronic Devices - Ionizing - Nonionizing - Internal Charging
The results of passive and active radiation measurements on Spacelab-1 are reported. Spacelab-1 was flown on the STS-9 mission, orbited at an altitude of 241 km, with an inclination of 57 deg and 240 hours of flight time. Approximately thirty passive detectors deployed inside the module, in the access tunnel, and outside on the pallet made possible the radiation measurements. The various forms of radiation measured were a low linear energy transfer component ranging from 94 to 133 mrads inside the module (average dose rate of 10.0 mrads/day; about twice the rate of earlier shuttle flights), an average mission dose-equivalent rate of about 18.5 mrem/day (six times higher than earlier flights), accumulated doses of 125 and 128 mrads and a yield of 17 and 12 mrads for passages through the South Atlantic Anomaly. Spacelab-1, because of its low altitude and short duration, was relatively benign in terms of total radiation dose. Some of the measurements such as high-LET particles and neutrons have biological significance and potential effects on future experiments.
As an emerging technology, silicon carbide (SiC) power MOSFETs are showing great potential for higher temperature/power rating, higher efficiency, and reduction in size and weight, which makes this technology ideal for high temperature, harsh environment applications such as downhole, medical, avionic, or even space applications. Radiation tolerance therefore becomes a critical aspect of the device performance in such environments. In this work, we explored radiation hardness of SiC devices to total ionizing dose (TID), neutron-induced single-event burnout (SEB), and heavy-ion induced single-event effects (SEE).
Three Tektronix 1024 x 1024 multi-pinned-phased (MPP) charge coupled devices were irradiated with protons to obtain data on CCD performance degradation in a proton radiation environment. The devices were irradiated with a spectrum of energies up to 120 MeV, simulating the total radiation dose of a long-term space experiment. Basic parameters such as charge transfer efficiency, dark current, noise, and full well were measured before and after irradiation. A test was also performed to determine the effectiveness of various thicknesses of tantalum shielding in protecting the CCD from damage. Dark current increase and CTE degradation were the most noticeable effects of proton radiation. This paper will present the objectives, test data, and conclusions of the proton testing, and will identify future testing to be performed.
Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs.