Small Current Measurements with Insulated Gate Field Effect Transistor Electrometers
Small current measurements with insulated-gate field effect transistor electrometers
ELECTROMETER↗
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Components irradiation test no. 19, gamma irradiation of 2N914, 2N918, S2N930, 2N2192 and 2N2369 transistors
Gamma radiation tests on n-p-n silicon epitaxial transistors
SILICON TRANSISTOR↗
A thick-film, insulated gate field effect transistor
Feasibility of fabricating thick film, insulated gate field effect transistor using integrated screened circuit technology
INTEGRATED CIRCUIT↗
Compatible thin-film transistors
Fabrication of thin film transistors compatible with passive components
THIN FILM↗
Phenomenological study of radiation damage and recovery of metal-oxide field effect transistors
Phenomenological study of radiation damage and recovery of metal oxide semiconductor field effect transistors
METAL OXIDE SEMICONDUCTOR /MOS/↗
Low-noise amplifier design with field-effect transistors, volume I Final report
Low noise amplifier design with field effect transistors, random noise characteristics, and noise measurements on commercial devices
NOISE MEASUREMENT↗
Proton irradiation effects in MOS and junction field-effect transistors and integrated circuits
Proton irradiation effects in MOS and junction field effect transistors and integrated circuits
INTEGRATED CIRCUIT↗
Design and development of a high power, low saturation voltage silicon switching transistor Quarterly report
Silicon switching transistor with saturation voltage of 0.1 V at 75 A collector current
SATURATION↗
Mechanisms of ionizing radiation surface effects on transistors.
Ionizing radiation effects on silicon planar bipolar transistors determine degradation mechanisms
SILICON TRANSISTOR↗
Design of low-noise transistor switch capable of meeting military EMI specifications.
Low noise transistor switch design capable of switching 1A and meeting military current probe EMI specifications
SWITCHING CIRCUIT↗
Transferred substrate heterojunction bipolar transistors for submillimeter wave applications
We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.
heterojunction bipolar transistor InP submillimete↗
Transferred substrate heterojunction bipolar transistors for millimeter and submillimeter wave applications
We report on our effort to develop the world's fastest transistor with the ultimate goal of utilizing them in electronic devices for advancing the present state of RF electronic systems.
InP HBT rf transistor III-V compound semiconductor↗
Low Temperature Noise and Electrical Characterization of the Company Heterojunction Field-Effect Transistor
This paper discusses the electrical properties of the complementary heterojunction field-effect transistor (CHFET) at 4K, including the gate leakage current, the subthreshold transconductance, and the input-referred noise voltage.
electrical properties transistors↗
Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron Transistor
We have demonstrated a bound to continuum state GaAs/AlxGa1-xAs infrared hot electron transistor which has a peak response at (sub =16.3). This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1-xAs barrier between the base and the collector as an energy discriminating filter.
infrared hot electron transistor photosensitive em↗
Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz
We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz.
transistors↗
Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications
Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.
large-area electronics↗
Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors
The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.
thermal cycling tests↗
Total Ionizing Dose Test Report BFR92A NPN 5 GHz Wide Band Transistor from NXP
The purpose of this test was to characterize the Philips/NXP BFR92A NPN 5 gigahertz wide band silicon transistor for total dose response. This test shall serves as the radiation lot acceptance test (RLAT) for the lot date code (LDC) 1027. The BFR92A is packaged in a 3-pin plastic SOT23 package. Low dose rate (LDR/ELDRS) irradiations was performed.
Total Ionizing Dose (TID)↗