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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Vapor grown silicon dioxide layer protects base-collector junction in silicon planar transistors during the emitter diffusion process. This oxide fills in any imperfections that exist in the thermally grown oxide layer and is of greater thickness than that layer. This process is used to deposit protective silicon dioxide coatings on optical surfaces.
Electrical pulse generator uses power transistors and silicon controlled rectifiers for producing a high current pulse having fast rise and fall times. At quiescent conditions, the standby power consumption of the circuit is equal to zero.
Simple circuit that uses a single transistor to accomplish capacitor storage followed by common-base switching supplies a pulse voltage, higher than that normally available from emitter-follower circuits, to drive a 100-watt transmitter.
Semiconductor information storage and retrieval system provides a comprehensive, accurate, and ready reference to characteristic data of diodes and transistors. The system can be used to supply a complete listing of technical component information necessary for circuit designers, reliability engineers, and quality assurance personnel.
Equivalent circuit for the field effect transistor made up of circuit elements can be simulated by existing computer programs.
MOS transistor structures with enhancement mode of operation, discussing fabrication processes via V-C characteristics, temperature effects on performance, etc
Transistor biased amplifier has a biased diode discriminator driven by a high impedance /several megohms/ current source, rather than a voltage source with several hundred ohms output impedance. This high impedance input arrangement makes the incremental impedance of the threshold diode negligible relative to the input impedance.
Small lightweight multiplexer incorporates IG-FETs /Insulated Gate-Field Effect Transistors/ for all digital logic functions, including the internally generated 3.6-kHz clock. It consists of 30 primary channels, each of which is sampled 120 times per second.
Power transistor is provided with an integral flat plate aluminum heat sink which mounts directly on a printed circuit board containing associated circuitry. Standoff spacers are used to attach the heat sink to the printed circuit board containing the remainder of the circuitry.
Circuit enables high sawtooth currents to be passed through a deflection coil and isolate the coil driving amplifier from the flyback voltage. It incorporates a switch consisting of transistors in series with the driving amplifier and deflection coil. The switch disconnects the deflection coil from the amplifier during the retrace time.
New frequency divider circuit can be synchronized over a wider input control frequency range, has greater phase stability, and is less sensitive to temperature changes than conventional synchronized oscillators. The new circuit uses the avalanche breakdown mode of operation of transistors.
Technique that makes the metal leads integral to the transistor wafer and reduces capacitance in the device, thereby increasing its efficiency is outlined.
Progress status on high power, low saturation voltage silicon switching transistor
Insulated gate field effect transistors using cadmium selenide or telluride as piezoelectric semiconductor material
Phenomenological study of radiation damage and recoverability of metal oxide field effect transistors
Proton irradiation effects in MOS and junction field-effect transistors and integrated circuits
High power low saturation voltage silicon switching transistor
Analytical expressions to determine transistor design effects on radiation resistance