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Compared to graphene with semimetallic features, two-dimensional (2D) silicon carbide (Si–C) materials constitute another highly promising family for opto-electronic applications owing to their intrinsic electronic gaps.
Robust atomic-to-meso-scale chirality is now observed in the one-dimensional form of tellurium. This enables a large and counter-intuitive circular-polarization dependent second harmonic generation response above 0.2 which is not present in two-dimensional tellurium. Orientation variations in 1D tellurium nanowires obtained by four-dimensional scanning transmission electron microscopy (4D-STEM) and their correlation with unconventional non-linear optical properties by second harmonic generation circular dichroism (SHG-CD) uncovers an unexpected circular-polarization dependent SHG response from 1D nanowire bundles – an order-of-magnitude higher than in single-crystal two-dimensional tellurium structures – suggesting the atomic- and meso-scale crystalline structure of the 1D material possesses an inherent chirality not present in its 2D form; and which is strong enough to manifest even in the aggregate non-linear optical (NLO) properties of aggregates.
Water isotope separation, specifically separating heavy from light water, is a technologically important problem due to the usage of heavy water in applications such as nuclear magnetic resonance, nuclear power, and spectroscopy.
We present absorption spectra of thin, free-flowing liquid sheets in the vacuum ultraviolet energy range using a gas-squeezed liquid jet. Compared to liquid flow cells, operation without transmission windows eliminates restrictions on the energy range. The temperature of the water sheet is estimated at 0 ± 3 °C, at the verge of the supercooled regime. By adjusting flow conditions in situ, we recorded absorption spectra at water sheet thicknesses ranging from 20 to 50 nm. We show that the absorption spectra of thin jets contain significant contributions from interference effects that need to be deconvoluted from spectral contributions due to the electronic structure. We employ a Fresnel propagation model to model the spectral changes and understand the impact of thickness variations and thin film interference. This opens the door for the investigation of solvation, interface, and similar effects by recording valence band spectra.
The evolution of medium range ordering (MRO) and crystallization behavior of amorphous TiO 2 films grown by atomic layer deposition (ALD) were studied using in situ four-dimensional scanning transmission electron microscopy. The films remain fully amorphous when grown at 120 °C or below, but they start showing crystallization of anatase phases when grown at 140 °C or above. The degree of MRO increases as a function of temperature and maximizes at 140 °C when crystallization starts to occur, which suggests that crystallization prerequires the development of nanoscale MRO that serves as the site of nucleation. In situ annealing of amorphous TiO 2 films grown at 80 °C shows enhancement of MRO but limited number of nucleation, which suggests that post-annealing develops only a small portion of MRO into crystal nuclei. The MRO regions that do not develop into crystals undergo structural relaxation instead, which provides insights into the critical size and degree of ordering and the stability of certain MRO types at different temperatures. In addition, crystallographic defects were observed within crystal phases, which likely negate corrosion resistance of the film. Our result highlights the importance of understanding and controlling MRO for optimizing ALD-grown amorphous films for next-generation functional devices and renewable energy applications.
Here, we describe a fully in situ method of fabricating light-scattering structures on III-V materials that generates a rough morphology via vapor phase etching and redeposition. Fully in situ methods support higher industrial throughput by utilizing the growth reactor to generate the light-trapping structures after device growth without removal from the reactor. We use HCl and PH 3 to etch and redeposit scattering morphologies on Ga 0.5 In 0.5 P in a dynamic hydride vapor phase epitaxy (D-HVPE) reactor. We show that the addition of PH 3 leads to redeposition during the vapor phase HCl etching of Ga 0.5 In 0.5 P and that HCl flow rate and time exposed to HCl-PH 3 each independently cause a linear increase in the redeposited feature size, indicating that redeposition proceeds by island growth in a III-Cl-limited, hydride-enhanced HVPE regime. Auger electron spectroscopy and scanning transmission electron microscopy with energy dispersive spectroscopy (STEM-EDS) reveal redeposition to be highly Ga-rich GaInP, i.e., Ga(In)P. The Ga-rich nature of the redeposition results from the higher thermodynamic driving force for Ga incorporation than for In during HVPE growth and the difference in the volatility of the III-Cl etch products. The resulting morphologies have high broadband scattering, as determined by normal specular reflectance and integrating sphere measurements, indicating effectiveness as light-scattering structures. In a 270-nm-thick GaAs photovoltaic device with a textured back surface, we achieve a 4.9% increase in short circuit current density (J SC ) without any loss in open-circuit voltage (V OC ) relative to a planar control using only a 60 s in situ texturing treatment.
Using a combination of hysteresis loop, Kerr microscope, and x-ray magnetic circular dichroism measurements, in this study we investigated the antiferromagnetic (AFM) domain switching process modulated by the sub-nm thick Co inserting layer in a single crystalline Fe/Co/CoO/MgO(001). The CoO AFM domain switching occurs at lower temperature for the thicker Co interlayer, and the activation energy barrier of CoO AFM domain switching decreases as the Co interlayer thickness increases. The exchange coupling strength between the AFM spins in CoO layer and the ferromagnetic spins in the Fe/Co bilayer is found to be independent of the Co layer thickness. Our results suggest an approach to modulate the dynamic properties of AFM domains with an interfacial modification.
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III-V materials provide the highest efficiencies, but the higher cost of these materials compared to other alternatives such as silicon has limited their applications. One way of reducing the costs is by minimizing the amount of material needed. In this work, using optical simulations we test light trapping layers in the front and in the back of a GaAs single junction solar cell. By using these layers, we predict that we can obtain near optically thick GaAs single junctions with only 300 nm active material, with maximum calculated J sc of 28.7 mA/cm 2 under the radiative limit.
In this report the domain structure in in-plane magnetized Fe/Ni/W(110) films is investigated using spin-polarized low-energy electron microscopy. A novel transition of the domain wall shape from a zigzaglike pattern to straight is observed as a function of the film thickness, which is triggered by the transition of the domain wall type from the out-of-plane chiral wall to the in-plane Néel wall. The contribution of the Dzyaloshinskii-Moriya interaction to the wall energy is proposed to explain the transition of the domain wall shape, which is supported by Monte Carlo simulations.
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Abstract Thin-film optical diodes are important elements for miniaturizing photonic systems. However, the design of optical diodes relies on empirical and heuristic approaches. This poses a significant challenge for identifying optimal structural models of optical diodes at given wavelengths. Here, we leverage a quantum annealing-enhanced active learning scheme to automatically identify optimal designs of 130 nm-thick optical diodes. An optical diode is a stratified volume diffractive film discretized into rectangular pixels, where each pixel is assigned to either a metal or dielectric. The proposed scheme identifies the optimal material states of each pixel, maximizing the quality of optical isolation at given wavelengths. Consequently, we successfully identify optimal structures at three specific wavelengths (600, 800, and 1000 nm). In the best-case scenario, when the forward transmissivity is 85%, the backward transmissivity is 0.1%. Electromagnetic field profiles reveal that the designed diode strongly supports surface plasmons coupled across counterintuitive metal–dielectric pixel arrays. Thereby, it yields the transmission of first-order diffracted light with a high amplitude. In contrast, backward transmission has decoupled surface plasmons that redirect Poynting vectors back to the incident medium, resulting in near attenuation of its transmission. In addition, we experimentally verify the optical isolation function of the optical diode.
all solid state Li battery made with organosulfide cathode, flexible thin SSE and Li anode
This is a poster presentation given at the 2024 AIChE Annual Meeting, San Diego, CA, October 27-31, 2024. In this poster we describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors.