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At least 235 records · Page 13

Improved Control of Charging Voltage for Li-Ion Battery

The protocol for charging a lithium-ion battery would be modified, according to a proposal, to compensate for the internal voltage drop (charging current internal resistance of the battery). The essence of the modification is to provide for measurement of the internal voltage drop and to increase the terminal-voltage setting by the amount of the internal voltage drop. Ordinarily, a lithium-ion battery is charged at constant current until its terminal voltage attains a set value equal to the nominal full-charge potential. The set value is chosen carefully so as not to exceed the lithium-plating potential, because plated lithium in metallic form constitutes a hazard. When the battery is charged at low temperature, the internal voltage drop is considerable because the electrical conductivity of the battery electrolyte is low at low temperature. Charging the battery at high current at any temperature also gives rise to a high internal voltage drop. In some cases, the internal voltage drop can be as high as 1 volt per cell. Because the voltage available for charging is less than the terminal voltage by the amount of the internal voltage drop, the battery is not fully charged (see figure), even when the terminal voltage reaches the set value. In the modified protocol, the charging current would be periodically interrupted so that the zero-current battery-terminal voltage indicative of the state of charge could be measured. The terminal voltage would also be measured at full charging current. The difference between the full-current and zero-current voltages would equal the internal voltage drop. The set value of terminal voltage would then be increased beyond the nominal full-charge potential by the amount of the internal voltage drop. This adjustment would be performed repeatedly, in real time, so that the voltage setting would track variations in the internal voltage drop to afford full charge without risk of lithium plating. If the charging current and voltage settings were controlled by a computer, then this method of charge control could readily be implemented in software.

Timmerman, Paul↗

Measuring Conductor Widths and Spacings Electrically

Widths and spacings of conductor lines on integrated circuits measured electrically by split cross-bridge resistor technique. Speeds evaluation of integrated-circuit fabrication processes. When measurement of probe currents and voltages and reduction of measurement data automated, test structure probed and characterized in less than one second.

Buehler, Martin G.↗

Ferritin-Templated Quantum-Dots for Quantum Logic Gates

Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

Choi, Sang H.↗

Fiber-optic sensors for aerospace electrical measurements: An update

Fiber-optic sensors are being developed for electrical current, voltage, and power measurements in aerospace applications. These sensors are presently designed to cover ac frequencies from 60 Hz to 20 kHz. The current sensor, based on the Faraday effect in optical fiber, is in advanced development after some initial testing. Concentration is on packaging methods and ways to maintain consistent sensitivity with changes in temperature. The voltage sensor, utilizing the Pockels effect in a crystal, has excelled in temperature tests. This paper reports on the development of these sensors, the results of evaluation, improvements now in progress, and the future direction of the work.

Patterson, Richard L.↗

ACTS Battery and Solar Array Assembly On-Orbit Measured Performance

The Advanced Communications Technology Satellite (ACTS) is a NASA experimental communications satellite system designed to demonstrate on-orbit Ka-band communications and switching technologies that will be used by NASA and the commercial sector in the 21st century. The ACTS was launched on September 12, 1993, and has performed over 10 years of successful experimental operations. The purpose of this report is to describe the ACTS power subsystem and the ACTS solar array and battery assemblies located within the power subsystem and then to document on-orbit measured performance from launch to mission end on April 28, 2004. Solar array and battery performance data is presented, and respective conclusions are drawn. The total solar array power available to the spacecraft was measured each year at the same time, and battery voltage performance was measured twice per year at the same times during peak solar eclipse. At the highest spacecraft power demand, the ACTS uses approximately 1113 W of electrical power during the low-burstrate experiment to operate all six satellite subsystems. After 10 years of on-orbit operation, solar array available output power normal to the Sun measured 1508 W, which represents 395 W of excess margin. The ACTS batteries have successfully supported the ACTS experiment program for over 10 years and operated in excess of 900 charge and discharge cycles through 21 eclipse seasons.

Hilderman, Don R.↗

The dc arc characteristics in subsonic orifice nozzle flow

The cold air flow field for a 1/27 cm orifice nozzle was determined for subsonic flow velocities. In addition, d.c. arc voltage, current, and diameter measurements were made for a range of velocities and arc gaps. Average voltage gradients increased rapidly as an arc extinguishing velocity was approached. Measured values of current and diameter were used as an input for relaxation solution of an energy balance equation to compute radial temperature profiles. Calculated arc voltage gradients compare favorably with measured average voltage gradients.

Nagamatsu, H. T.↗

Automated System Tests Ferroelectric Capacitors

Polarization-switching parameters measured under computer control. Ferroelectric-capacitor-testing system applies voltage pulses and measures responses of ferroelectric capacitor to determine write; "time dependence of polarization," polarization-retention and fatigue characteristics of capacitor. Highly integrated setup quite flexible, versatile, and interactive, and allows convenient computer storage and analysis of data.

Lakata, Mark↗

Experimental Investigation of the Near-Wall Region in the NASA HiVHAc EDU2 Hall Thruster

The HiVHAc propulsion system is currently being developed to support Discovery-class NASA science missions. Presently, the thruster meets the required operational lifetime by utilizing a novel discharge channel replacement mechanism. As a risk reduction activity, an alternative approach is being investigated that modifies the existing magnetic circuit to shift the ion acceleration zone further downstream such that the magnetic components are not exposed to direct ion impingement during the thruster's lifetime while maintaining adequate thruster performance and stability. To measure the change in plasma properties between the original magnetic circuit configuration and the modified, "advanced" configuration, six Langmuir probes were flush-mounted within each channel wall near the thruster exit plane. Plasma potential and electron temperature were measured for both configurations across a wide range of discharge voltages and powers. Measurements indicate that the upstream edge of the acceleration zone shifted downstream by as much as 0.104 channel lengths, depending on operating condition. The upstream edge of the acceleration zone also appears to be more insensitive to operating condition in the advanced configuration, remaining between 0.136 and 0.178 channel lengths upstream of the thruster exit plane. Facility effects studies performed on the original configuration indicate that the plasma and acceleration zone recede further upstream into the channel with increasing facility pressure. These results will be used to inform further modifications to the magnetic circuit that will provide maximum protection of the magnetic components without significant changes to thruster performance and stability.

Electric Propulsion↗

Behavior of Langmuir Probes in Non-Equilibrium Plasmas

Langmuir probes are diagnostic tools used to determine electron temperature, number density, and plasma potential. Irving Langmuir first used an electrostatic probe in the 1920s to find these characteristics in ionized gases. Single, double, and triple Langmuir probes are commonly used in plasma diagnostics because of their relative simplicity. In the single probe, a swept voltage is applied between the probe tip and circuit common to acquire a waveform showing the collected current as a function of applied voltage. A double Langmuir probe consists of two tips, both inserted into the plasma, with a voltage applied between them. As this voltage is swept, a current-voltage characteristic is measured. In a triple probe three probe tips are electrically coupled to each other with constant non-swept voltages applied between each of the tips. The voltages are selected to represent three points on the single Langmuir probe I-V curve. Elimination of the voltage sweep makes it possible to measure time-varying plasma properties in transient plasmas. Triple Langmuir probe measurements have been widely employed for various types of plasmas, including pulsed and time-varying plasmas such as those seen in pulsed plasma thrusters (PPTs), dense plasma focus devices, plasma flows, and fusion experiments. The typical Langmuir probe analysis for determining electron temperature and number density of the plasma (for a single, double, or triple Langmuir probe) includes an assumption that the plasma is in thermal equilibrium. While the this assumption may be justified for some applications, it is unlikely that it is fully justifiable for pulsed and time-varying plasmas or for the entire time a plasma device is in use. In the present work, we model the responses of Langmuir probes as they are inserted into a range of simple equilibrium and non-equilibrium plasmas. We return to basic governing equations of probe current collection and compute the current to the probes for a distribution function consisting of two Maxwellian distributions with different temperatures (the two-temperature Maxwellian). A variation of this method is also employed, where one of the Maxwellians is offset from zero (in velocity space) to add a suprathermal beam of electrons to the tail of the main Maxwellian distribution (the bump-on-the-tail distribution function). For a range of parameters in these non-Maxwellian distributions, we compute the current collection to the probes. Comparing the distribution function that was assumed a priori with the plasma density and temperature one would infer when applying standard probe theory to analyze the collected currents serves to illustrate the effect a non- Maxwellian plasma would have on results interpreted using the equilibrium probe current collection theory, allowing us to state the magnitudes of these deviations as a function of the assumed distribution function properties.

Polzin, Kurt A.↗

Measuring Input Thresholds on an Existing Board

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Kuperman, Igor↗

Method and apparatus for frequency spectrum analysis

A method for frequency spectrum analysis of an unknown signal in real-time is discussed. The method is based upon integration of 1-bit samples of signal voltage amplitude corresponding to sine or cosine phases of a controlled center frequency clock which is changed after each integration interval to sweep the frequency range of interest in steps. Integration of samples during each interval is carried out over a number of cycles of the center frequency clock spanning a number of cycles of an input signal to be analyzed. The invention may be used to detect the frequency of at least two signals simultaneously. By using a reference signal of known frequency and voltage amplitude (added to the two signals for parallel processing in the same way, but in a different channel with a sampling at the known frequency and phases of the reference signal), the absolute voltage amplitude of the other two signals may be determined by squaring the sine and cosine integrals of each channel and summing the squares to obtain relative power measurements in all three channels and, from the known voltage amplitude of the reference signal, obtaining an absolute voltage measurement for the other two signals by multiplying the known voltage of the reference signal with the ratio of the relative power of each of the other two signals to the relative power of the reference signal.

Cole, Steven W.↗

Measurement of material parameters that limit the open-circuit voltage in P-N-junction silicon solar cells

The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.

Lindholm, F. A.↗

Silicon solar cell process development, fabrication and analysis

The fabrication of solar cells from several unconventional silicon materials is described, and cell performance measured and analyzed. Unconventional materials evaluated are edge defined film fed grown (EFG), heat exchanger method (HEM), dendritic web grown, and continuous CZ silicons. Resistivity, current voltage, and spectral sensitivity of the cells were measured. Current voltage was measured under AM0 and AM1 conditions. Maximum conversion efficiencies of cells fabricated from these and other unconventional silicons were compared and test results analyzed. The HEM and continuous CZ silicon were found to be superior to silicon materials considered previously.

Minahan, J. A.↗

A Facility Effect Characterization Test of the BHT-6000 Hall Thruster

During the development of the BHT-6000 Hall thruster for flight on NASA’s Power and Propulsion Element, a facility effect test campaign was performed on an engineering unit of the thruster. Testing occurred in Vacuum Facility 5 at NASA Glenn Research Center. The goal of the test campaign was to characterize the behavior of the BHT-6000 Hall thruster as functions of facility effects such that the thruster’s in-flight behavior can be reasonably bounded. In particular, the behavior of the thruster with regard to the background pressure and electrical environment was tested. The background pressure was controlled by injecting supplemental propellant flow into the environment, while the electrical environment was controlled by biasing the facility beam dump. Thrust was found to remain constant over the tested range of pressures while specific impulse was found to increase slightly (1 to 1.5% over a range of up to 20 μTorr, depending on operating point). Plasma plume properties, particularly of ions exiting the side of the thruster, were found to be highly sensitive to pressure and may require pressures of less than a few μTorr for accurate measurements. The thruster was found to operate identically with changing beam dump bias voltage to within measurement uncertainties.

Electric propulsion↗

A Facility Effect Characterization Test of the BHT6000 Hall Thruster

During the development of the BHT-6000 Hall thruster for flight on NASA’s Power and Propulsion Element, a facility effect test campaign was performed on an engineering unit of the thruster. Testing occurred in Vacuum Facility 5 at NASA Glenn Research Center. The goal of the test campaign was to characterize the behavior of the BHT-6000 Hall thruster as functions of facility effects such that the thruster’s in-flight behavior can be reasonably bounded. In particular, the behavior of the thruster with regard to the background pressure and electrical environment was tested. The background pressure was controlled by injecting supplemental propellant flow into the environment, while the electrical environment was controlled by biasing the facility beam dump. Thrust was found to remain constant over the tested range of pressures while specific impulse was found to increase slightly (1 to 1.5% over a range of up to 20 μTorr, depending on operating point). Plasma plume properties, particularly of ions exiting the side of the thruster, were found to be highly sensitive to pressure and may require pressures of less than a few μTorr for accurate measurements. The thruster was found to operate identically with changing beam dump bias voltage to within measurement uncertainties.

Electric propulsion↗

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

Toftul, Alexandra↗

The ISR Asymmetrical Capacitor Thruster: Experimental Results and Improved Designs

A variety of Asymmetrical Capacitor Thrusters has been built and tested at the Institute for Scientific Research (ISR). The thrust produced for various voltages has been measured, along with the current flowing, both between the plates and to ground through the air (or other gas). VHF radiation due to Trichel pulses has been measured and correlated over short time scales to the current flowing through the capacitor. A series of designs were tested, which were increasingly efficient. Sharp features on the leading capacitor surface (e.g., a disk) were found to increase the thrust. Surprisingly, combining that with sharp wires on the trailing edge of the device produced the largest thrust. Tests were performed for both polarizations of the applied voltage, and for grounding one or the other capacitor plate. In general (but not always) it was found that the direction of the thrust depended on the asymmetry of the capacitor rather than on the polarization of the voltage. While no force was measured in a vacuum, some suggested design changes are given for operation in reduced pressures.

Canning, Francis X.↗