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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Surface basicity controls C–C coupling rates during carbon dioxide-assisted methane coupling over bifunctional Ca/ZnO catalysts

Carbon dioxide-assisted coupling of methane offers an approach to chemically upgrade two greenhouse gases and components of natural gas to produce ethylene and syngas. Prior research on this reaction has concentrated efforts on catalyst discovery, which has indicated that composites comprised of both reducible and basic oxides are especially promising. There is a need for detailed characterization of these bifunctional oxide systems to provide a more fundamental understanding of the active sites and their roles in the reaction. We studied the dependence of physical and electronic properties of Ca-modified ZnO materials on Ca content via X-ray photoelectron and absorption spectroscopies, electron microscopy, and infrared spectroscopic temperature-programmed desorption (IR-TPD). It was found that introduction of only 0.6 mol% Ca onto a ZnO surface is necessary to induce significant improvement in the catalytic production of C 2 species: C 2 selectivity increases from 5% on un-modified ZnO to 58%, at similar conversions. Evidence presented shows that this selectivity increase results from the formation of an interface between the basic CaO and reducible ZnO phases. Furthermore, the basicity of these interface sites correlates directly with catalytic activity over a wide composition range, and this relationship indicates that moderate CO 2 adsorption strength is optimal for CH 4 coupling. These results demonstrate, for the first time to our knowledge, a volcano-type relationship between CO 2 -assisted CH 4 coupling activity and catalyst surface basicity, which can inform further catalyst development.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Comparison of the Arrhenius parameters between conventional hydrothermal and microwave-assisted synthesis methods for tin oxide nanoparticles

Microwave (MW) irradiation has emerged as a powerful tool for accelerating materials synthesis, yet the origins of its specific influence on reaction kinetics remain elusive. While multiple studies have attributed the observed enhancements in reaction rates under MW heating to reduced activation energies, other accounts have suggested modifications to the Arrhenius pre-exponential factor as the predominant cause. Distinguishing between these parameters in modern applications of MW processing in nanomaterials requires experimental approaches capable of resolving the dynamic and nuanced structural kinetics that govern MW-assisted chemistry. Here, we combine in-situ synchrotron X-ray total scattering with pair distribution function (PDF) analysis to track the structural evolution of SnO 2 nanoparticles synthesized via MW-assisted and conventional hydrothermal conditions. Avrami modeling and Arrhenius analysis suggest that although MW irradiation yields a higher apparent activation energy, the enhanced crystallization is better explained by a pre-exponential factor several orders of magnitude larger than that of conventional heating. These findings suggest that the MW field induces a higher frequency of successful molecular rearrangements rather than lowering the intrinsic activation barrier. The results contribute further insights clarifying the role of the applied MW field for materials design where MW-specific effects can be deliberately harnessed. Furthermore, this work presents a framework promoting the utility of in-situ PDF characterization coupled with kinetic analysis for developing more sophisticated descriptions of nanoscale transformations for MW-driven reaction kinetics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Plasma-assisted deposition and characterization of Al 2 O 3 dielectric layers on (001) β -Ga 2 O 3

In this work, we have investigated plasma-assisted deposition of Al 2 O 3 on HVPE (001) β-Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga 2 O 3 , with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. In conclusion, this study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al 2 O 3 /β-Ga 2 O 3 MOS structures for device application purposes.

42 ENGINEERING↗
DOE OSTI2023

The acceleration of a high-charge electron bunch to 10 GeV in a 10-cm nanoparticle-assisted wakefield accelerator

An intense laser pulse focused onto a plasma can excite nonlinear plasma waves. Under appropriate conditions, electrons from the background plasma are trapped in the plasma wave and accelerated to ultra-relativistic velocities. This scheme is called a laser wakefield accelerator. In this work, we present results from a laser wakefield acceleration experiment using a petawatt-class laser to excite the wakefields as well as nanoparticles to assist the injection of electrons into the accelerating phase of the wakefields. We find that a 10-cm-long, nanoparticle-assisted laser wakefield accelerator can generate 340 pC, 10 ± 1.86 GeV electron bunches with a 3.4 GeV rms convolved energy spread and a 0.9 mrad rms divergence. It can also produce bunches with lower energies in the 4–6 GeV range.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

Here, we study the impact of deep-level defects on trap-assisted Auger–Meitner recombination in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) method and deep-level optical spectroscopy (DLOS). Carrier dynamics information, including carrier lifetime, recombination rate, and carrier density, is obtained from SSEL, while DLOS is used to obtain the deep-level defect density. Through fitting the nonradiative recombination rates of wafers with different deep-level defect densities, we obtain the Shockley–Read–Hall (SRH) and trap-assisted Auger–Meitner recombination (TAAR) coefficients. We show that defect-related nonradiative recombination, including both SRH and TAAR, accounts for a relatively small fraction of the total nonradiative recombination, which is dominated by intrinsic Auger–Meitner recombination. The interplay between carrier localization and Coulomb enhancement has a different impact on radiative and intrinsic Auger–Meitner recombination. Evidence is presented that the imbalance between the change of radiative and intrinsic Auger–Meitner recombination is the primary cause of the efficiency droop at high carrier densities in the samples studied.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electronic, direct optical, and phonon-assisted optical properties of 4H Si from first principles

The cubic polytype of silicon (Si) is the most commercialized semiconductor material and finds applications in numerous electronic and optoelectronic devices, such as solar cells. However, recent reports on the synthesis of the hexagonal 4H Si polytype have attracted the attention of the scientific community to understand its functional properties. Here, we report the electronic, vibrational, and optical properties of the 4H Si polytype obtained with predictive first-principles calculations, with an emphasis of phonon-assisted absorption in the indirect regime. Compared to the cubic polytype, 4H Si shows a slightly narrower indirect gap by ∼0.05 eV. The calculated phonon-assisted optical spectra show that 4H Si exhibits a stronger absorption coefficient than cubic Si across the visible and IR spectral regions. We further evaluate the short-circuit current density of textured thin-films. We demonstrate that 4H Si can achieve the same short-circuit current density for a five times thinner film compared to the cubic polytype, which mainly resulted from absorption in the indirect gap regime. Our work demonstrates the advantages of 4H Si for thin-film silicon-based solar-cell applications.

Materials Science↗
DOE OSTI2020

Performances of ionic liquid matrices with butyl ammonium counterion for matrix-assisted laser desorption/ionization mass spectrometric detection and analysis of sucralfate

In this work, the performances of two ionic liquid matrices (ILMs) with the same ammonium counterpart for mass spectrometric analysis of the insoluble and soluble sucralfate were compared. Matrix-assisted laser desorption/ionization mass spectrometry (MALDI MS) was performed assisted by the butylammonium salts of α-cyano-hydroxycinnamic acid (CHCAB) and 2,5-dihydroxybenzoic acid (DHBB). CHCAB has a higher IE than DHBB, but better optical properties. CHCAB is more suitable for the analysis of sucralfate, although molecular ions of both compounds were detectable only with low intensities. Thus, optical properties of ILMs are crucial to enhance the sensitivity of MALDI MS detection of polysulfated oligosaccharides. © 2019, © 2019 Taylor & Francis Group, LLC.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Quantum dynamics of positron-hydrogen scattering and three-body bound state formation with an assisting laser field: predictions of a reduced-dimensionality model

Abstract We investigate the quantum dynamics of target excitation and positronium formation in the positron-hydrogen atom scattering without and with an external assisting laser field within a reduced-dimensional quantum model. Strong interference fringes between the incident and reflected positron wave packets are observed in the reaction region. We further investigate the critical behavior of transition probabilities near the channel-opening thresholds for hydrogen excitation and positronium formation and find a strong competition between channels with similar threshold energies, but different parities. The transmission ratios of the incident positron in different reaction channels are calculated, and it is shown that only positronium formation in the ground state prefers forward scattering. Our simulation of the positron-hydrogen scattering with an assisting laser field indicates that the three-particle bound states can be formed during the collisions due to the photon emission induced by the external laser field.

Optics↗
DOE OSTI2024

Dimensionality effects on trap-assisted recombination: the Sommerfeld parameter

Abstract In the context of condensed matter physics, the Sommerfeld parameter describes the enhancement or suppression of free-carrier charge density in the vicinity of a charged center. The Sommerfeld parameter is known for three-dimensional systems and is integral to the description of trap-assisted recombination in solids. Here we derive the Sommerfeld parameter in one and two dimensions and compare with the results in three dimensions. We provide an approximate analytical expression for the Sommerfeld parameter in two dimensions. Our results indicate that the effect of the Sommerfeld parameter is to suppress trap-assisted recombination in decreased dimensionality.

Physics↗
DOE OSTI2024

AI-assisted detector design for the EIC (AID(2)E)

Artificial Intelligence is poised to transform the design of complex, large-scale detectors like ePIC at the future Electron Ion Collider. Featuring a central detector with additional detecting systems in the far forward and far backward regions, the ePIC experiment incorporates numerous design parameters and objectives, including performance, physics reach, and cost, constrained by mechanical and geometric limits. This project aims to develop a scalable, distributed AI-assisted detector design for the EIC (AID(2)E), employing state-of-the-art multiobjective optimization to tackle complex designs. Supported by the ePIC software stack and using G EANT 4 simulations, our approach benefits from transparent parameterization and advanced AI features. The workflow leverages the PanDA and iDDS systems, used in major experiments such as ATLAS at CERN LHC, the Rubin Observatory, and sPHENIX at RHIC, to manage the compute intensive demands of ePIC detector simulations. Tailored enhancements to the PanDA system focus on usability, scalability, automation, and monitoring. Ultimately, this project aims to establish a robust design capability, apply a distributed AI-assisted workflow to the ePIC detector, and extend its applications to the design of the second detector (Detector-2) in the EIC, as well as to calibration and alignment tasks. Additionally, we are developing advanced data science tools to efficiently navigate the complex, multidimensional trade-offs identified through this optimization process.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Microwave-assisted synthesis of iron sulfide motifs for electrochemical applications

Abstract The syntheses of FeS 2 and Fe 3 S 4 nanomaterials were optimized using a novel facile, surfactant-free, and microwave-assisted, one-pot synthesis method, run under ambient and reasonably mild reaction conditions. Synthetic parameters, such as metal precursor salt identity, reaction time, reaction temperature, metal:sulfur molar ratios, and solvent combinations, were all systematically investigated and optimized. A series of FeS 2 (pyrite) samples was initially fabricated using thioacetamide (TAA) as the sulfur precursor to generate a distinctive, uniform octahedra-based morphology. Switching the sulfur precursor from TAA to L-cysteine resulted in a corresponding transformation in not only chemical composition from FeS 2 to an iron thiospinel structure, Fe 3 S 4 (otherwise known as greigite), but also an associated morphological evolution from octahedra to nanosheet aggregates. The study of these materials has enabled crucial insights into the formation mechanisms of these materials under a relatively non-conventional microwave-assisted setting. Furthermore, in separate experiments, multi-walled carbon nanotubes (MWNTs) and graphene were added in with underlying metal sulfide species to create conductive Fe–S/MWNT composites and Fe–S/graphene composites, respectively. The method of addition of either MWNTs or graphene was also explored, wherein an ‘ ex-situ ’ synthetic procedure was found to be the least disruptive means of attachment and immobilization onto iron sulfide co-reagents as a means of preserving the latter’s inherent composition and morphology. The redox acidity for the parent material and associated composites demonstrates the utility of our as-developed synthetic methods for creating motifs relevant for electrochemical applications, such as energy storage.

25 ENERGY STORAGE↗
DOE OSTI2025

AI-assisted transport of radioactive ion beams

Beams of radioactive heavy ions allow researchers to study rare and unstable atomic nuclei, shedding light into the internal structure of exotic nuclei and on how chemical elements are formed in stars. However, the extraction and transport of radioactive beams rely on time-consuming expert-driven tuning methods, where hundreds of parameters are manually optimized. Here, in this study, we introduce a system that employs Artificial Intelligence (AI), specifically utilizing Bayesian Optimization, to assist in the transport process of radioactive beams. We apply our methodology to real-life scenarios showing advantages when compared with standard tuning methods. This AI-assisted approach can be extended to other radioactive beam facilities around the world to improve operational efficiency and enhance scientific output.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Trap-assisted Auger-Meitner recombination in GaN p-i-n diodes

Most properties of semiconductor devices are dominated by shallow impurities. However, deep defects often play an important role, for instance, in recombination processes or high field transport. While a variety of techniques are available to assess the density and energy levels of impurities, other properties, such as the recombination mechanisms of the defects, escape observation. We report on the direct measurement of hot electrons generated by trap-assisted Auger-Meitner recombination (TAAR) in GaN p-i-n diodes. By performing electron emission spectroscopy (EES) on diodes with surfaces activated to negative electron affinity by cesium, we observe the expected overflow electrons of p-i-n diodes under low current injection. However, when operating the devices at higher current densities, as low as ∼25 A/c⁢m 2 , we measure the emission of high-energy electrons. At variance with the observed hot electrons in light-emitting diodes (LEDs) using EES, the hot electrons generated in p-i-n diodes at our tested currents cannot be from eeh Auger-Meitner recombination due to the diodes' significantly lower carrier densities compared to those in LEDs. During our measurements, we observe the emission of accumulated electrons with energies ∼0.42 eV, ∼0.99 eV, ∼1.43 eV, and ∼2.32 eV above the conduction-band minimum (CBM) at various bias conditions, suggesting the existence of conduction-band features in GaN at these energies where electrons can be long-lived, such as satellite-valley minima and inflection points. We also measure incompletely relaxed hot electrons approaching energies 1.97 ± 0.13 eV and 2.94 ± 0.13 eV above the CBM, as the diodes are biased to high currents, suggesting at least some of the TAAR partaking defects have an energy level ≳1.97 eV and ≳2.94 eV away from either the conduction or valence band edges. Additionally, at our highest operating currents, we measure hot electrons with energies 3.28 ± 0.13 eV above the CBM, providing direct evidence of TAAR processes involving shallow impurities. This unexpected observation of TAAR in GaN p-i-n diodes spotlights the importance of further studies of defects in GaN and the necessity to incorporate the multi-phonon emission, radiative, and TAAR capture steps of defect-assisted recombination cycles into device modeling. Furthermore, this experiment demonstrates the applicability of the simplest semiconductor structures, p-i-n diodes, as a test bed to study the rich recombination physics of semiconductor materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Trap-Assisted Auger-Meitner Recombination from First Principles

Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic devices, but the conventional multiphonon emission (MPE) process fails to explain the observed loss in wide-band-gap materials. Here, we highlight the role of trap-assisted Auger-Meitner (TAAM) recombination and present a first-principles methodology to determine TAAM rates due to defects or impurities in semiconductors or insulators. We assess the impact on efficiency of light emitters in a recombination cycle that may include both TAAM and carrier capture via MPE. We apply the formalism to the technologically relevant case study of a calcium impurity in InGaN, where a Shockley-Read-Hall recombination cycle involving MPE alone cannot explain the experimentally observed nonradiative loss. We find that, for band gaps larger than 2.5 eV, the inclusion of TAAM results in recombination rates that are orders of magnitude larger than recombination rates based on MPE alone, demonstrating that TAAM can be a dominant nonradiative process in wide-band-gap materials. Furthermore, our computational formalism is general and can be applied to the calculation of TAAM rates in any semiconducting or insulating material.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Phonon-Assisted Auger-Meitner Recombination in Silicon from First Principles

Here, we present a consistent first-principles methodology to study both direct and phonon-assisted Auger-Meitner recombination (AMR) in indirect-gap semiconductors that we apply to investigate the microscopic origin of AMR processes in silicon. Our results are in excellent agreement with experimental measurements and show that phonon-assisted contributions dominate the recombination rate in both n-type and p-type silicon, demonstrating the critical role of phonons in enabling AMR. We also decompose the overall rates into contributions from specific phonons and electronic valleys to further elucidate the microscopic origins of AMR. Our results highlight potential pathways to modify the AMR rate in silicon via strain engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Machine Learning-Assisted Stability Boundary Determination of Multiport Autonomous Reconfigurable Solar Power Plants

The multiport autonomous reconfigurable solar (MARS) power plant is a promising solution to integrate renewable resources and energy storage systems into the alternating current (ac) power grid and an high-voltage direct current (HVdc) link. In the MARS system, various input power sources are connected to the individual submodules (SMs) through direct current (dc)–dc converters. However, the presence of external power sources can result in unbalanced capacitor voltages of SMs, thereby violating stability constraints under multiple/diverse operating conditions. This article aims to address the gap by accurately determining the stability boundary of the MARS system. As such, a novel machine learning (ML)-assisted energy balancing control (EBC) criterion is proposed. Further, in conjunction with a refined EBC, this approach ensures balanced capacitor voltages across various types of SMs, significantly enhancing the overall system efficiency. The proposed EBC criterion effectively controls EBC activation and deactivation, achieving remarkable accuracy. Both power systems computer aided design (PSCAD)/electromagnetic transients including direct current (EMTDC) simulations and control hardware-in-the-loop (cHIL) tests are conducted to validate the feasibility and efficiency of the proposed method. By combining the EBC and ML-assisted EBC criterion, efficient energy management is achieved for systems featuring multiple input power sources, such as MARS. This approach enables the system to fully exploit its potential across an expanded operational range while upholding high-efficiency standards.

14 SOLAR ENERGY↗
DOE OSTI2024

Forced Oscillation Source Location in Power Systems Using MVMD-assisted DEF in TF Plane

Fast and accurate forced oscillation source location (FOSL) is critical for mitigating forced oscillations in power systems. Here, to overcome the shortcomings of traditional dissipating energy flow (DEF) in decomposing the forced oscillation components from the measurement responses, a multivariate variational mode decomposition (MVMD)-assisted FOSL is proposed in this paper to locate the forced oscillation sources from measurements in time-frequency (TF) plane. The multi-channel measurement matrix of each generator is formed, then the multi-channel modes are decomposed from the formed multi-channel measurement matrix using the MVMD. Further, the intrinsic mode functions (IMFs) associated with the forced oscillation mode are distinguished from the decomposed modes according to the relative energy weights. With the distinguished IMFs, the MVMD-assisted DEF calculation method is developed to locate the forced oscillation source. Finally, the performance of the proposed method is evaluated using the simulation data of the WECC 179-bus test system and IEEE-NASPI Oscillation Source Location Contest as well as the actual PMU data of ISO New England. The results validated the effectiveness and accuracy of the proposed method in the FOSL.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Comprehensive Studies on Hot Compaction and Vibration-Assisted Compaction Tests of Aluminum Powder

Abstract Aluminum powder compaction was studied using both test and simulation. Cold compaction, hot compaction, and vibration-assisted (cold) compaction tests were conducted to achieve different density ratios. First, the hot compaction test (at 300 °C, compression pressure 140 MPa) improved about 6% compared with cold compaction under the same compression pressure. Second, although the relative density ratio does not obviously improve at a vibration-assisted (cold) compaction, the strength of the specimens made under vibration loading is much better than those of cold compaction. Additionally, finite element models with well-calibrated Drucker–Prager Cap (DPC) material constitutive model were built in abaqus/standard to simulate the powder compaction process. The results of the finite element model have very good correlations with test results up to the tested range, and this finite element model further predicts the loading conditions needed to achieve the higher density ratios. Two exponential equations of the predicted density ratio were obtained by combining the test data and the simulation results. A new analytical solution was developed to predict the axial pressure versus the density ratio for the powder compaction according to DPC material model. The results between the analytical solution and the simulation model have a very good match.

Engineering↗