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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14

Turbomachine blade trailing edge cooling circuit with turn passage having set of obstructions

A turbomachine blade, and a coupon for a turbomachine blade, are disclosed. The blade may include an airfoil body having a pressure side and a suction side connected by a leading edge and a trailing edge, a coolant feed passage defined in the airfoil body, and a coolant reuse passage defined in the airfoil body. The blade may also include a first cooling circuit defined in the airfoil body. The first cooling circuit may include a rearward passage extending toward the trailing edge from and fluidly coupled to the coolant feed passage, and a radially spreading return passage extending away from the trailing edge toward and fluidly coupled to the coolant reuse passage. The cooling circuit may also include a radially extending turn passage coupling the rearward passage and the radially spreading return passage. A first set of obstructions may be positioned in the radially extending turn passage.

Dyson, Thomas Earl↗

Power converter having a gate drive circuit and method of operating

A power converter apparatus comprises a set of switching elements communicatively coupled with a set of gate drive circuits. Each gate drive circuit is configured to provide a respective drive signal to a corresponding switching element, each switching element being switchably responsive to the respective drive signal. The apparatus includes a controller module configured to control an output state of the power converter, and selectively change one of a respective gate resistance and a respective gate current of a corresponding subset of the gate drive circuits based on the output state of the power converter.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Offset-aligned three-dimensional integrated circuit

A three-dimensional integrated circuit includes a first die structure having a first geometry. The first die structure includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The three-dimensional integrated circuit includes a second die structure having a second geometry. A stacked portion of the second die structure is aligned with the first region. The three-dimensional integrated circuit includes an additional die structure stacked with the first die structure and the second die structure. The additional die structure has the first geometry or the second geometry.

Wilkerson, Brett P.↗

Opportunities and Challenges of Computational Electromagnetics Methods for Superconducting Circuit Quantum Device Modeling: A Practical Review

High-fidelity numerical methods that model the physical layout of a device are essential for the design of many technologies. For methods that characterize electromagnetic effects, these numerical methods are referred to as computational electromagnetics (CEM) methods. Although the CEM research field is mature, emerging applications can still stress the capabilities of the techniques in use today. The design of superconducting circuit quantum devices falls in this category due to the unconventional material properties and important features of the devices covering nanometer to centimeter scales. Such multiscale devices can stress the fundamental properties of CEM tools which can lead to an increase in simulation times, a loss in accuracy, or even cause no solution to be reliably found. While these challenges are being investigated by CEM researchers, knowledge about them is limited in the broader community of users of these CEM tools. This review is meant to serve as a practical introduction to the fundamental aspects of the major CEM techniques that a researcher may need to choose between to model a device, as well as provide insight into what steps they may take to alleviate some of their challenges. Our focus is on highlighting the main concepts without rigorously deriving all the details, which can be found in many textbooks and articles. After covering the fundamentals, we discuss more advanced topics related to the challenges of modeling multiscale devices with specific examples from superconducting circuit quantum devices. We conclude with a discussion on future research directions that will be valuable for improving the ability to successfully design increasingly more sophisticated superconducting circuit quantum devices. Although our focus and examples are taken from this area, researchers from other fields will still benefit from the details discussed here.

Elkin, Samuel T. [Virginia Tech., Blacksburg]↗

A novel equivalent circuit for GDC-based solid oxide cells considering the variations of cell resistances under load

Regarding the mixed ionic-electronic conductive electrolytes, there are several constant assumptions about cell resistances and transference numbers. In this work, the charge transport frameworks of mixed conductive SOCs are comprehensively illustrated. And the independent external current density is introduced into the equivalent circuit for considering the variations of cell resistances under load. The updated expressions of cell resistances together with transference numbers are deduced rigorously based on the equivalent circuit. Electrolyte-supported NiO-GDC/GDC/LSCF cells are tested, and the experimental results validate the variations of cell resistances, especially for the polarization resistance. The comparisons show that electron hole resistances together with transference number calculated by the updated expressions are larger than those obtained by Liu’s method. More accurate transference number and cell resistances under load can be achieved by using the proposed method in this study.

25 ENERGY STORAGE↗

Wide Bandgap Solid State Circuit Breakers for AC and DC Microgrids

The objective of the project is to develop a new class of ultrafast, self-powered, programmable, autonomously operated, bidirectional solid state circuit breakers (SSCBs) using wide band gap (WBG) semiconductors with 1000X reduction in response time and 5X reduction in cost in comparison to commercial mechanical circuit breakers. In particular, we have developed two SSCB prototypes of 380VDC/220VAC/20A and 1000VDC/10A using GaN power switches for common distribution-level AC and DC voltages.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Measurement of shunt resistance and conduction band offset in Cu(In,Ga)Se 2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn 1-x GaxSe 2 (CIGSe) solar cells. A range of compositions are investigated, including constant x=0.35 and x=0.55 as well as a graded composition profile having a minimum of x=0.25. Both the open circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. Finally, to quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

14 SOLAR ENERGY↗

All 2D Material Printed Diodes and Circuits on Paper for Sustainable Electronics

Sustainable electronics aim to reduce environmental impact by using ecofriendly materials, energy-efficient manufacturing, and recyclable components. However, existing approaches rely on complex, resource-intensive methods, rare metals, or nanomaterials with limited stability as well as plastic substrates, raising sustainability issues. Solution-processed two-dimensional (2D) materials offer a promising alternative: water-based and biocompatible conductive, semiconductive, and insulating 2D material inks can be produced with scalable techniques and are suitable for the fabrication of fully printed devices on low-cost and biodegradable paper substrates. However, 2D material only and fully printed diodes on paper have not yet been reported. Here, we demonstrate fully inkjet-printed 2D material-based diodes on paper using metal-insulator-semiconductor and metal-insulator-metal-semiconductor architectures. Water-based graphene and MoS2 inks, prepared by liquid-phase exfoliation, are used for the metallic and insulating films, while electrochemical exfoliation is used to produce the semiconducting MoS2 ink. The highest forward-to-reverse current ratio obtained is 330 (at ±2 V), while the forward current density is 1 mA/cm2 (at 1 V), making the diode performance comparable to the best solution-processed diodes reported so far. However, in contrast to previous works, fabrication occurs entirely at room temperature and ambient pressure, without using high-pressure sputtering, thermal evaporation, and any precious metal ink. The devices maintain stable performance under bending up to strain of 4% over 10,000 cycles. Finally, the diodes are successfully integrated with other 2D-material based electrical components to realize fully printed RC circuits, differentiators, integrators, and AC-to-DC converters onto paper, hence demonstrating the suitability of our approach for sustainable and disposable integrated circuits.

2D materials↗

Noninvasive mid-circuit measurement and reset on atomic qubits

Mid-circuit measurement and reset of subsets of qubits are crucial ingredients of quantum error correction and many quantum information applications. Measurement of atomic qubits is accomplished through resonant fluorescence, which typically disturbs neighboring atoms due to photon scattering. We propose and prototype a scheme for measurement and reset that provides both spatial and spectral isolation by using tightly focused laser beams and narrow atomic transitions. The unique advantage of this scheme is that all operations are applied exclusively to the read-out qubit, with little overhead and negligible disturbance to the other qubits of the same species. In this paper, we pave the way for noninvasive and high-fidelity mid-circuit measurement and demonstrate all key building blocks on a single trapped barium ion.

atomic systems↗

Ground-state-based model reduction with unitary circuits

Here, we present a method to numerically obtain low-energy effective models based on a unitary transformation of the ground state. The algorithm finds a unitary circuit that transforms the ground state of the original model to a projected wavefunction with only the low-energy degrees of freedom. The effective model can then be derived using the unitary transformation encoded in the circuit. We test our method on the one-dimensional and two-dimensional square-lattice Hubbard model at half-filling, and obtain more accurate effective spin models than the standard perturbative approach.

Hubbard model↗

Flux-based three-dimensional electrodynamic modeling approach to superconducting circuits and materials

Modeling the behavior of superconducting electronic circuits containing Josephson junctions is crucial for the design of superconducting information processors and devices. In this paper, we introduce DEC-QED, a computational approach for modeling the electrodynamics of superconducting electronic circuits containing Josephson junctions in arbitrary three-dimensional electromagnetic environments. DEC-QED captures the nonlinear response and induced currents in BCS superconductors and accurately captures phenomena such as the Meissner effect, flux quantization, and Josephson effects. Using a spatial coarse-graining formulation based on discrete exterior calculus (DEC), DEC-QED can accurately simulate transient and long-time dynamics in superconductors. Finally, the expression of the entire electrodynamic problem in terms of the gauge-invariant flux field and charges makes the resulting classical field theory suitable for second quantization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dynamic, symmetry-preserving, and hardware-adaptable circuits for quantum computing many-body states and correlators of the Anderson impurity model

We present a hardware-reconfigurable ansatz on N q -qubits for the variational preparation of many-body states of the Anderson impurity model (AIM) with N imp + N bath = N q /2 sites, which conserves total charge and spin z component within each variational search subspace. The many-body ground state of the AIM is determined as the minimum over all minima of O(N$^2_ q$) distinct charge-spin sectors. Hamiltonian expectation values are shown to require ω(N q ) < N meas. $\leqslant$ O(N imp N bath ) symmetry-preserving, parallelizable measurement circuits, each amenable to postselection. To obtain the one-particle impurity Green’s function we show how initial Krylov vectors can be computed via midcircuit measurement and how Lanczos iterations can be computed using the symmetry-preserving ansatz. For a single-impurity Anderson model with a number of bath sites increasing from one to seven, we show using numerical emulation that the ease of variational ground-state preparation is suggestive of linear scaling in circuit depth and subquartic scaling in optimizer complexity. We therefore expect that, combined with time-dependent methods for Green’s function computation, our ansatz provides a useful tool to account for electronic correlations on early fault-tolerant processors. Finally, with a view towards computing real materials properties of interest like magnetic susceptibilities and electron-hole propagators, we provide a straightforward method to compute many-body, time-dependent correlation functions using a combination of time evolution, midcircuit measurement-conditioned operations, and the Hadamard test.

36 MATERIALS SCIENCE↗

Suppressing Quantum Circuit Errors Due to System Variability

We present a quantum circuit optimization technique that takes into account the variability in error rates that is inherent across present-day noisy quantum computing platforms. This method can be run after qubit routing or postcompilation and consists of computing isomorphic subgraphs to input circuits and scoring each using heuristic cost functions derived from system calibration data. Using an independent standard algorithmic test suite, we show that it is possible to recover on average nearly 40% of missing fidelity using better qubit selection via efficient to compute cost functions. We demonstrate additional performance gains by considering qubit placement over multiple quantum processors. The overhead from these tools is minimal with respect to other compilation steps, such as qubit routing, as the number of qubits increases. As such, our method can be used to find qubit mappings for problems at the scale of quantum advantage and beyond.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Beamline Spectroscopy of Integrated Circuits With Hard X-Ray Transition Edge Sensors at the Advanced Photon Source

At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to semiconductor-based energy-dispersive detectors, but with better collection efficiency than wavelength-dispersive instruments, will enable greatly improved X-ray emission and absorption spectroscopic measurements. Additionally, a prototype instrument with 24 microwave-frequency multiplexed pixels is now in testing at the Advanced Photon Source (APS) 1-BM beamline. Initial measurements show an energy resolution ten times better (150 eV compared to < 15 eV) than the silicon-drift detectors currently available to APS beamline users, and in particular demonstrate the ability to resolve closely-spaced emission lines in samples containing multiple transition metal elements, such as integrated circuits. Comparing fluorescence spectra of integrated circuits measured with our TESs at the beamline to those measured with silicon detectors, we find emission lines and elements largely hidden (e.g. Hf alongside Cu) from a semiconductor-based detector but well resolved by a TES. This directly shows the strengths of TES-based instruments in fluorescence mapping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Measurements of DC SQUID Damping Effects on Superconducting Resonant Circuits

Here, we present experimental measurements of SQUID-induced damping effects on strongly coupled, lumped-element resonators in the 500kHz–1 MHz frequency range. While dc SQUIDs are commonly used for sensitive readout of electromagnetic signals such as in lumped-element axion dark matter searches, coupling a dc SQUID to a resonant circuit modifies the circuit's resonance frequency, quality factor, noise, and impedance. These parameters have a direct impact on the science reach of axion dark matter detectors, making it important to understand SQUID damping contributions. We describe a helium dip probe and two-stage SQUID readout scheme used to probe SQUID damping effects. Measurements from this setup inform the design and operation of both future test platforms as well as next-generation dark-matter experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Epoxy / Silicone Potting Material Removal for Greater Recovery of Circuit Boards

This report documents an exploratory research project, “Epoxy/Silicone Potting Material Removal for Greater Recovery of Circuit Boards,” that investigated micro abrasion and laser ablation as potential cost effective methods for removal of epoxy and silicone potting material from printed circuit boards (PCBs) to expose components for testing and repair. The ability to cost effectively remove such PCB potting materials will improve PCB repair, remanufacture, and reuse opportunities with potential for sizable reductions in material use, E-waste, and energy. Laser ablation was identified as a method potentially warranting further investigation, in particular for epoxy based potting materials.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Fast, Controllable, and Modular Solid-State Circuit Breaker Design for Battery Management Systems

Electric power grid is experiencing a growing number of distributed and inertia-free generation resources. To facilitate the growing generation and load demands, and ensure stable operation, energy storage systems, especially behind-themeter-storage (BTMS), have emerged as a potential candidate. BTMS plays a vital role in the grid storage sector and supports high power charging for EVs. However, the potential of thermal runaway and associated safety concerns in the batteries can hamper their widespread adoption. In this work, we provide a solution for a fast and controllable discharge of a cell that was identified as a stressful/faulty, in the battery pack, and fast circuit breaking leveraging the Solid-State Circuit Breaker (SSCB) technology which provides active control over the cell connection as opposed to conventional passive solutions. Testing on the simulation platform successfully validated the concept, demonstrating its efficacy. Controlled discharge testing with 20Ah LiFePO4 Lithium Iron Phosphate (LFP) cells from 1C-10C current rate on the hardware prototype corroborated simulation results, demonstrating design feasibility and providing essential data for its performance and thermal characteristics, while also revealing limitations that inform areas for further optimization.

33 ADVANCED PROPULSION SYSTEMS↗

Globally Optimizing QAOA Circuit Depth for Constrained Optimization Problems

We develop a global variable substitution method that reduces n-variable monomials in combinatorial optimization problems to equivalent instances with monomials in fewer variables. We apply this technique to 3-SAT and analyze the optimal quantum unitary circuit depth needed to solve the reduced problem using the quantum approximate optimization algorithm. For benchmark 3-SAT problems, we find that the upper bound of the unitary circuit depth is smaller when the problem is formulated as a product and uses the substitution method to decompose gates than when the problem is written in the linear formulation, which requires no decomposition.

3-SAT↗