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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2017

Geotechnical Tests on Asteroid Simulant Orgueil

In the last 100 years, the global population has more than quadrupled to over seven billion people. At the same time, the demand for food and standard of living has been increasing which has amplified the global water use by nearly eight times from approximately 500 to 4000 cu km per yr from 1900 to 2010. With the increasing concern to sustain the growing population on Earth it is necessary to seek other approaches to ensure that our planet will have resources for generations to come. In recent years, the advancement of space travel and technology has allowed the idea of mining asteroids with resources closer to becoming a reality. During the duration of the internship at NASA Kennedy Space Center, several geotechnical tests were conducted on BP-1 lunar simulant and asteroid simulant Orgueil. The tests that were conducted on BP-1 was to practice utilizing the equipment that will be used on the asteroid simulant and the data from those tests will be omitted from report. Understanding the soil mechanics of asteroid simulant Orgueil will help provide basis for future technological advances and prepare scientists for the conditions they may encounter when mining asteroids becomes reality in the distant future. Distinct tests were conducted to determine grain size distribution, unconsolidated density, and maximum density. Once the basic properties are known, the asteroid simulant will be altered to different levels of compaction using a vibrator table to see how compaction affects the density. After different intervals of vibration compaction, a miniature vane shear test will be conducted. Laboratory vane shear testing is a reliable tool to investigate strength anisotropy in the vertical and horizontal directions of a very soft to stiff saturated fine-grained clayey soil. This test will provide us with a rapid determination of the shear strength on the undisturbed compacted regolith. The results of these tests will shed light on how much torque is necessary to drill through the surface of an asteroid. Most of the known asteroids are believed to be left over material during the formation of the solar system that never accreted to form planets. Asteroids can be found in several groups such as Trojan Asteroids, Near Earth Asteroids (NEAs) and the main asteroid belt. The Trojan Asteroids orbit the 4th and 5th Lagrange points of major planets in the Solar System while the NEA's have orbits that are close to and sometimes intersect with Earths orbit and the Main Asteroid Belt which is found between the orbit of Mars and Jupiter. Gravitational perturbations can alter the orbit of asteroids in the Main Asteroid Belt causing them to move closer to earth causing them to become in the NEA class.

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NASA NTRS2008

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

Zheng, Xinyu↗