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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Electrochemical Doping of Halide Perovskites by Noble Metal Interstitial Cations

Abstract Metal halide perovskites are an attractive class of semiconductors, but it has proven difficult to control their electronic doping by conventional strategies due to screening and compensation by mobile ions or ionic defects. Noble‐metal interstitials represent an under‐studied class of extrinsic defects that plausibly influence many perovskite‐based devices. In this work, doping of metal halide perovskites is studied by electrochemically formed Au + interstitial ions, combining experimental data on devices with a computational analysis of Au + interstitial defects based on density functional theory (DFT). Analysis suggests that Au + cations can be easily formed and migrate through the perovskite bulk via the same sites as iodine interstitials (I i + ). However, whereas I i + compensates n‐type doping by electron capture, the noble‐metal interstitials act as quasi‐stable n‐dopants. Experimentally, voltage‐dependent, dynamic doping by current density–time ( J–t ), electrochemical impedance, and photoluminescence measurements are characterized. These results provide deeper insight into the potential beneficial and detrimental impacts of metal electrode reactions on long‐term performance of perovskite photovoltaic and light‐emitting diodes, as well as offer an alternative doping explanation for the valence switching mechanism of halide‐perovskite‐based neuromorphic and memristive devices.

14 SOLAR ENERGY↗
DOE OSTI2025

Co‐Doping Approach for Enhanced Electron Extraction to TiO 2 for Stable Inorganic Perovskite Solar Cells

Inorganic perovskite CsPbI 3 solar cells hold great potential for improving the operational stability of perovskite photovoltaics. However, electron extraction is limited by the low conductivity of TiO 2 , representing a bottleneck for achieving stable performance. In this study, a co‐doping strategy for TiO 2 using Nb(V) and Sn(IV), which reduces the material's work function by 80 meV compared to Nb(V) mono‐doped TiO 2 , is introduced. To gain fundamental understanding of the processes at the interfaces between the perovskite and charge‐selective layer, transient surface photovoltage measurements are applied, revealing the beneficial effect of the energetic and structural modification on electron extraction across the CsPbI 3 /TiO 2 interface. Using 2D drift‐diffusion simulations, it is found that co‐doping reduces the interface hole recombination velocity by two orders of magnitude, increasing the concentration of extracted electrons by 20%. When integrated into n–i–p solar cells, co‐doped TiO 2 enhances the projected T S80 lifetimes under continuous AM1.5G illumination by a factor of 25 compared to mono‐doped TiO 2 . This study provides fundamental insights into interfacial charge extraction and its correlation with operational stability of perovskite solar cells, offering potential applications for other charge‐selective contacts.

14 SOLAR ENERGY↗
DOE OSTI2020

Growth and Characterization of Arsenic-Doped CdTe 1-x Se x Single Crystals Grown by the Cd-Solvent Traveling Heater Method

The photovoltaic performance of CdTe solar cells is mainly limited by low doping and short minority carrier lifetime. Group-V element doping and Se-alloying have a significant impact on tuning these fundamental CdTe properties. In this paper, we report the growth of p-type As-doped, Cd-rich CdTe 1-x Se x single crystals using metallic Cd as the solvent in the traveling-heater method. The structural and electrical properties of CdTe1-xSex are examined for different Se concentrations. CdTe 1-x Se x single crystals (0 ≤ x ≤ 0.5) with zincblende structure indicate homogeneous composition. The 10 17 cm-3 As-doping activation efficiency can be maintained at close to 50% for x ≤ 0.2. Se alloying leads to bulk minority carrier lifetime exceeding 30 ns for samples doped near 1017 cm -3 . These results help us to overcome the current roadblocks in device performance.

14 SOLAR ENERGY↗
DOE OSTI2022

Reverse water-gas shift: Na doping of m-ZrO 2 supported Pt for selectivity control

Reverse water-gas shift (RWGS) is a vital step in producing syngas for the chemical conversion of CO 2 to liquid transportation fuels and chemicals. Na-doping of m-ZrO 2 supported Pt catalysts allowed selectivity control by systematically increasing the ratio of relative rates of r CO /r CH4 . This was achieved by facilitating the formation of formate intermediate species, which precedes CO formation, and by suppressing the metallic Pt 0 active sites responsible for CH 4 formation. Here, a 2.5%Na-2%Pt/m-ZrO 2 catalyst was first tested for the forward water-gas shift (FWGS) reaction and found to have 50% higher CO conversion at 285°C compared to the undoped catalyst. Results of DRIFTS spectroscopy of adsorbed CO confirmed a formate ν(CH) band shift to lower wavenumbers (2870–2802 cm —1 ) with the addition of Na and more rapid forward formate decomposition in steam to H 2 and carbonate species, the precursor to CO 2 . This is consistent with C-H bond breaking being the rate limiting step of a FWGS mechanism occurring at the metal-support junction. Consistent with this, DRIFTS of RWGS in 4%CO 2 + 60%H 2 showed more facile formation of formate for the Na-doped catalyst and, once again, the ν(CH) band was shifted to lower wavenumbers (2874–2803 cm —1 ) with Na-doping. In addition, Na doping resulted in a systematic decrease in the Pt-carbonyl band in DRIFTS of adsorbed CO as well as DRIFTS of in-situ RWGS reaction tests, suggesting that Na blocked a fraction of on-top Pt sites, breaking up ensembles of Pt 0 responsible for methanation. The selectivity of the 2.5%Na-doped catalyst, unlike its undoped counterpart, was remarkably resistant to methanation (e.g., selectivity < 0.2% CH 4 with pressures of up to 20 bar).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

High-efficiency perovskite photovoltaic modules achieved via cesium doping

Perovskite solar modules have been attracting increasing attention due to their market potential, yet publications concerned with theintrinsic scale-up potential of different perovskite compositions remain relatively scarce. On the other hand, while great success is being made towards improving the power conversion efficiency (PCE) of perovskite solar cells (PSCs) by cesium cation (Cs + ) doping of the perovskite, more attention is being paid to the perovskite phase stabilization effect of Cs + doping, and less to other properties that are critical to understand and futher improve the PSC's. In this work, moderately-Cs-doped MAPbI 3 was employed as a model perovskite material in order to exclude the phase stabilization effect. Our systematic study revealed the influence of Cs + in organic-inorganic hybrid perovskites on the crystal structure, crystallization process, trap state density, band structure and charge (i.e., ions or photo-carriers) transport. Markedly, it has been observed that Cs + doping can greatly increase the carrier diffusion length in the perovskite films, thus improving the potential to scale-up PSC's.The PCE of small area devices (0.09 cm 2 ) was increased to 21.72% from 19.73%, with decreased hysteresis behavior and increased operational stability (T85 = 1000 h) after Cs + doped, where T85 refers to the retention of 85% of the initial PCE. Moreover, a PCE of 21.08% was obtained for a Cs + -containing perovskite module with an active area > 30 cm 2 , which demonstrates a better "reproducibility" than the reference sample (MAPbI3-based perovskite modules, PCE = 18.26%).

14 SOLAR ENERGY↗
DOE OSTI2020

Cr-doped U 3 Si 2 composite fuels under steam corrosion

Dense Cr-doped U 3 Si 2 composite fuels were manufactured by spark plasma sintering, and the effects of Cr addition on mechanical properties and oxidation resistance were investigated. Furthermore, dynamic oxidation testing by thermogravimetric analysis revealed significantly improved oxidation resistance of U 3 Si 2 with minimal doping of 3 wt% Cr. The onset oxidation temperature increased to above 550 °C in air and ~520 °C in steam conditions for the 5 wt% and 10 wt% Cr-doped composites. Steam corrosion testing under 360 °C for 24 hours indicated well-maintained pellet integrity without pulverization for the 10 wt% Cr-doped U 3 Si 2 pellet which only showed minor surface oxidation. The first promising results open up the possibility of designing and manufacturing metal additive-doped U 3 Si 2 composite fuels with significantly-improved corrosion resistance as a potential candidate for accident tolerant fuels.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors

The Ovonic Threshold Switching (OTS) selector serves as an essential component in the development of three-dimensional high-density memory integration technology. Nevertheless, the state-of-the-art high-performance OTS materials usually contain toxic elements such as arsenic (As), posing significant risks to both environmental and human health. Nitrogen (N), which belongs to the same group as arsenic (As), has emerged as a highly promising alternative for As doping. However, the underlying mechanisms that govern N-based OTS materials have not yet been extensively investigated. In this study, we delve into the effects of N doping on the structural, bonding, and electronic properties of amorphous GeSe (a-GeNSe) by ab initio molecular dynamics simulations to bridge the knowledge gap. Our findings indicate that upon N doping in a-GeSe, the formation of robust Ge-N bonds, along with N-centered tetrahedral and triangular structures, resulting in the sluggish atomic movement that enhances the thermal stability and endurance of a-GeNSe. The OTS characteristics are significantly influenced by the material’s electronic band structure, and thus the relatively slow performance drift can be attributed to the stabilization of mid-gap states, a result of N doping which effectively slows down the aging process of chalcogenide glass. Moreover, the increased mobility gap in a-GeNSe raises the threshold voltage (V th ), making it more compatible with commercially available phase-change memory materials. Furthermore, our findings reveal the extensive impact of the N element on a typical OTS material and offer valuable perspectives for alternative doping strategies that could potentially supplant As practices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Photo-doping of spiro-OMeTAD for highly stable and efficient perovskite solar cells

A widely used component of high-efficiency perovskite solar cells (PSCs) is the molecular hole-transport material (HTM) spiro-OMeTAD. This organic solid needs to be p-doped to acquire sufficient hole conductivity. However, the conventional doping method using LiTFSI in the air is slow, sensitive to the environment, and may lead to the deterioration of the PSCs by unintended oxidation or dopant migration. It is thus highly desirable to develop fast doping approaches that avoid exposing the PSC to ambient air and easy-to-move dopant ions. Here, we report here that light absorption by spiro-OMeTAD itself triggers redox photochemistry that has so far been ignored. Strikingly, we found that Y(III) or La(III)-tBP complexes catalyze the symmetry-breaking charge separation of photo-excited spiro-OMeTAD, resulting in the efficient p-doping of the HTM. Using this photo-redox process, we realize PSCs with superior stability over cells using conventional doping that show no degradation under continuous illumination over 1,000 h.

14 SOLAR ENERGY↗
DOE OSTI2022

Electron doping of NdNiO 3 thin films using dual chamber CaH 2 annealing

Hydrogen donor doping has been exploited as a strategy to manipulate the electronic structure and electrical properties of functional oxide systems. Especially, the development of synthetic methods to achieve electron doping of perovskite rare-earth nickelate thin films utilizing interstitial hydrogen is highly desirable considering the rich electronic phase diagram hosting several functional properties. Here, in this work, we present the hydrogenation of NdNiO 3 (NNO) thin films using CaH 2 annealing and the resulting giant modulation of electrical resistivity in hydrogenated NNO (H–NNO) thin films. Magnetron sputtering was employed to deposit epitaxial ~60 nm-thin NNO films on single crystal LaAlO 3 (LAO) substrates. The formation of the pristine perovskite NNO phase was realized after annealing the films at 500 °C for 24 h. CaH 2 annealing of NNO thin films for time durations ranging from 1 to 6 h was performed in a vacuumed ampule with two interconnected chambers at 280 °C. The two-chamber design enables a simple and clean approach for hydrogen doping without physical contact between the powder and sample of interest. X-ray diffraction and Raman spectroscopy revealed the formation of NNO in pristine samples, and the subsequent hydrogen incorporation upon CaH 2 annealing without forming any impurity phases. The conversion of the oxidation state of Ni towards +2 upon CaH 2 annealing was probed using X-ray photoelectron spectroscopy and X-ray absorption spectroscopy. Consequently, a substantial increase in the room-temperature resistivity was observed upon CaH 2 annealing indicating the formation of a strongly correlated electronic configuration of Ni in H–NNO due to electron doping. Overall, the findings of this study highlight the versatility of CaH 2 annealing as an electron doping method to tune the electrical properties of correlated oxides at low temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

First-principles elucidation of the effects of Al-doping on Li-ion diffusion in LiCoO 2

Al-doped garnet Li 7 La 3 Zr 2 O 12 solid-electrolyte and LiCoO 2 cathode are promising choices as catholyte materials in all solid-state Li batteries, however, interdiffusion of Al is commonly evident during high-temperature processing and electrochemical cycling. Furthermore, to address the impact of Al interdiffusion on Li + transport properties in LiCoO 2 , we carried out a systematic evaluation of Al doping on Li + diffusion barriers in LiCoO 2 using first-principles based methods. Following the monovacancy diffusion mechanism, Al-doping (primarily at the Co site) is found to improve Li diffusion kinetics in the LiCoO 2 lattice due to favorable CoO 6 octahedral distortion experienced at the transition states. However, when considering the previously established dominant divacancy diffusion mechanism, slower Li diffusion is generally expected. In addition, a broad variation of Li diffusion barriers is observed upon Al doping, which suggests the system may suffer from non-uniform Li incorporation and diffusion that adversely affects its rate capacity during cycling. In summary, this work highlights, for the rational design of catholyte of all solid-state batteries, special attention may need to be paid to address the potential impact of non-intentional doping induced during processing on the overall electrochemical performance of the catholyte.

Al-doped LiCoO2↗
DOE OSTI2021

Complex Relationship between Side-Chain Polarity, Conductivity, and Thermal Stability in Molecularly Doped Conjugated Polymers

Molecularly doped conjugated polymers with polar side chains are an emerging class of conducting materials exhibiting enhanced and thermally stable conductivity. In this work, we study the electronic conductivity (σ) and the corresponding thermal stability of two polythiophene derivatives comprising oligoethylene glycol side chains: one having oxygen attached to the thiophene ring (poly(3-(methoxyethoxyethoxy)thiophene) (P3MEET)) and the other having a methylene spacer between the oxygen and the thiophene ring (poly(3-(methoxyethoxyethoxymethyl)thiophene) (P3MEEMT)). Thin films were vapor-doped with fluorinated derivatives of tetracyanoquinodimethane (FnTCNQ, n = 4, 2, 1) to determine the role of dopant strength (electron affinity) in maximum achievable σ. Specifically, when vapor doping with F 4 TCNQ, P3MEET achieved a substantially higher σ of 37.1 ± 10.1 S/cm compared to a σ of 0.82 ± 0.06 S/cm for P3MEEMT. Structural characterization using a combination of X-ray and optical spectroscopy reveals that the higher degree of conformational order of polymer chains in the amorphous domain upon doping with F 4 TCNQ in P3MEET is a major contributing factor for the higher σ of P3MEET. Additionally, vapor-doped P3MEET exhibited superior thermal stability compared to P3MEEMT, highlighting that the presence of polar side chains alone does not ensure higher thermal stability. Molecular dynamics simulations indicate that the dopant–side-chain nonbond energy is lower in the P3MEET:F 4 TCNQ mixture, suggesting more favorable dopant–side-chain interaction, which is a factor in improving the thermal stability of a polymer/dopant pair. Our results reveal that additional factors such as polymer ionization energy and side-chain–dopant interaction should be taken into account for the design of thermally stable, highly conductive polymers.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Basal Plane Doping to Activate Colloidal MoS 2 Nanosheets for Catalytic Hydrodeoxygenation of para- Cresol

The valorization of biomass into biofuels is a critical process for producing renewable fuels. Hydrodeoxygenation (HDO), particularly over doped molybdenum disulfide (MoS 2 ), a transition metal dichalcogenide (TMD) material, is a common representative catalytic reaction system for converting biomass-derived materials into useful hydrocarbons. However, the location and role of dopants, such as Co, in HDO is not fully understood. The effects of dopant location and oxidation state are often precluded by inhomogeneity in the ensemble properties of nanosheet size and dopant dispersion, as well as difficulty in observing the behavior of atomic site behavior directly. Using a colloidal approach to synthesize cobalt-doped MoS 2 nanosheets with controlled dopant concentration, combined with X-ray absorption spectroscopy (XAS) and density functional theory (DFT) calculations, we determine that basal plane doped Co (25% Co:Mo mole ratio) shows peak catalytic activity in HDO of para-cresol, a model biomass-derived compound, and that basal Co sites are demonstrably more active than edge sites. By observing these doping effects in MoS 2 catalysts for HDO, we can further optimize not only the production of carbon-neutral fuels but also direct the tailoring of doped TMD catalysts toward their intended applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Pressure-Modulated Energy Transfer Dynamics in Mn 2+ -Doped CdS/ZnS Core/Shell Quantum Dots

Transition metal doping in semiconductor quantum dots (QDs) significantly impacts their optical properties, thus expanding the range of their potential optoelectronic applications. This study investigates the pressure-dependent energy transfer dynamics in Mn 2+ -doped CdS/ZnS core/shell QDs, focusing on how external hydrostatic pressure modulates these dynamics and optical properties. By synthesizing Mn 2+ -doped QDs with varying Mn 2+ doping concentrations, we explore the effects of the pressure on photoluminescence (PL) spectra and energy transfer efficiency. Our study reveals that increasing pressure induces a blueshift in the QD host bandgap PL and a redshift in the Mn 2+ dopant PL. The pressure-induced shifts highlight a unique modulation mechanism where the energy transfer efficiency decreases with pressure due to reduced wave function overlap between host excitons and Mn 2+ dopants. Detailed analysis of the PL quantum yields and energy transfer rate constants provides insights into these dynamics, suggesting that the pressure can effectively and reversibly regulate the energy transfer efficiencies and rates. In conclusion, these results have implications for developing pressure-sensitive configurable devices and exploring pressure-induced phenomena in doped nanomaterials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Influence of gadolinium doping on structural, optical, and electronic properties of polymeric graphitic carbon nitride

Polymeric graphitic carbon nitride (gCN) materials have received great attention in the fields of photo and electrocatalysis due to their distinct properties in metal-free systems with high physicochemical stability. Nevertheless, the activity of undoped gCN is limited due to its relatively low specific surface area, low conductivity, and poor dispersibility. Doping Gd atoms in a gCN matrix is an efficient strategy to fine-tune its catalytic activity and its electronic structure. Herein, the influence of various wt% of gadolinium (Gd) doped in melon-type carbon nitride was systematically investigated. Gadolinium-doped graphitic carbon nitride (GdgCN) was synthesized by adding gadolinium nitrate to dicyandiamide during polymerization. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results revealed that the crystallinity and the morphological properties are influenced by the % of Gd doping. Furthermore, X-ray photoelectron spectroscopy (XPS) studies revealed that the gadolinium ions bonded with nitrogen atoms. Complementary density functional theory (DFT) calculations illustrate possible bonding configurations of Gd ions both in bulk material and on ultrathin melon layers and provide evidence for the corresponding bandgap modifications induced by gadolinium doping.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Extrinsic n-type doping of Cd 3 As 2 thin films

Cd 3 As 2 provides an excellent platform for studying the physics of three-dimensional Dirac semimetals due to its stability as well as its compatibility with thin film growth. Crystals made using both bulk and thin film synthesis are unintentionally doped n-type, and other than introducing Zn to reduce the carrier concentration, no efforts have been reported to alter this intrinsic doping without major changes to the band structure. Here, group VI elements Te and Se are introduced during epitaxy to increase the electron concentration of the films. Starting from an unintentionally doped electron concentration of 1–2 × 10 17 cm -3 , concentrations of up to 3 × 10 18 cm -3 are achieved. Analysis of Shubnikov–de Haas oscillations reveals good agreement in calculated effective mass and Fermi velocity of highly doped films with unintentionally doped single crystals with similar electron concentrations. The density functional theory is also performed to study the effects of group VI substitutions and confirms no strong perturbations in the electronic structure. This work ultimately demonstrates tunability in the carrier concentration using extrinsic dopants without substantial changes in the band structure, allowing for intentional design of Fermi-level position for device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Low-efficiency-droop c -plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active region carrier density (n), causing the electrical efficiency droop onset to occur at low current densities. Here, we present an approach to reduce the internal electric fields (Eint) in c-plane QWs by placing doped p-type and n-type GaN barriers close to the QW. The reduced Eint also allows a thick QW active region design, which helps to lower n to further reduce the droop. The concept of using doped barriers to control Eint is explained using theory and device simulations. Following that, multiple series of thick single QW (SQW) LEDs were grown and characterized. Key parameters in the epitaxial design such as the doping levels and the relative position of the doped barriers were systematically studied and optimized. In conclusion, by using optimized doped barriers and a thick SQW, c-plane LEDs with a low-efficiency droop of 14% at 300 A/cm2 [with respect to the peak external quantum efficiency (EQE)] and a high peak EQE of 49% were demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Reaction mechanisms for electrical doping of organic semiconductors using complex dopants

Electrical doping of organic semiconductors (OSCs) can be achieved using simple one-electron reductants and oxidants as n- and p-dopants, respectively, but for such dopants, increased doping strength is accompanied by increased sensitivity to ambient moisture and/or oxygen. “Indirect” or “complex” dopants—defined here as those that generate OSC radical cations or anions via pathways more complex than a single simple electron transfer, i.e., by multistep reactions—represent a means of circumventing this problem. Further, this review highlights the importance of understanding the reaction mechanisms by which such dopants operate for: (i) ensuring a researcher knows the composition of a doped material; (ii) predicting the thermodynamic feasibility of achieving doping with related dopant:OSC combinations; and (iii) predicting whether thermodynamically feasible doping reactions are likely to be rapid or slow, or to require subsequent activation. The mechanistic information available to date for some of the wide variety of complex n- and p-dopants that have been reported is then reviewed, emphasizing that in many cases our knowledge is far from complete.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2006

Delta-Doped High Purity Silicon UV-NIR CCDs with High QE and Low Dark Current

Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.

Orion↗