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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Proton Conducting Neuromorphic Materials and Devices

Neuromorphic computing and artificial intelligence hardware generally aims to emulate features found in biological neural circuit components and to enable the development of energy-efficient machines. In the biological brain, ionic currents and temporal concentration gradients control information flow and storage. It is therefore of interest to examine materials and devices for neuromorphic computing wherein ionic and electronic currents can propagate. Protons being mobile under an external electric field offers a compelling avenue for facilitating biological functionalities in artificial synapses and neurons. In this review, we first highlight the interesting biological analog of protons as neurotransmitters in various animals. We then discuss the experimental approaches and mechanisms of proton doping in various classes of inorganic and organic proton-conducting materials for the advancement of neuromorphic architectures. Since hydrogen is among the lightest of elements, characterization in a solid matrix requires advanced techniques. We review powerful synchrotron-based spectroscopic techniques for characterizing hydrogen doping in various materials as well as complementary scattering techniques to detect hydrogen. First-principles calculations are then discussed as they help provide an understanding of proton migration and electronic structure modification. Outstanding scientific challenges to further our understanding of proton doping and its use in emerging neuromorphic electronics are pointed out.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Window-integrated charge-mode digital-to-analog converter for arbitrary waveform generator

A digital-to-analog converter circuit that creates an analog waveform from an input digital waveform. Operating the circuit comprises using the input digital waveform to 1) operate a charge control switch to set a charge time period, 2) operate a discharge control switch to set a discharge time period, 3) set a charge current magnitude using a charge gain, and 4) set a discharge current magnitude using a discharge gain. A charge source electrically charges a load capacitor during the charge time period (i.e., the charge mode). A discharge source electrically discharges the load capacitor during the discharge time period (i.e., the discharge mode). A circuit output transmits the analog waveform defined by the charge mode and the discharge mode. A charge current magnitude greater than the discharge current magnitude produces an upward-sloping analog waveform. A charge current magnitude less than the discharge current magnitude produces a downward-sloping analog waveform.

Li, Shaorui↗
DOE OSTI2020

Interfacial spin–orbit torques

Spin–orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin–orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin–orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin–orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin–orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. In this study, we show the relationship between different interface transport parameters within the same model. For charges and spins flowing perpendicular to the interface, interfacial spin–orbit coupling both modifies the mixing conductance of the magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin–orbit coupling gives rise to torques described by spin–orbit filtering, spin swapping, and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

High frequency impedance characteristics of a tunable microplasma device

Computational studies on high frequency impedance characteristics of a microplasma device are reported. While microplasma is ignited using a primary excitation signal, frequency response of plasma impedance is determined by a secondary high frequency probe signal with significantly lower voltage amplitude such that it does not influence the plasma parameters. Here, the computational model utilizing the drift–diffusion approximation is first validated by comparing with experimental data for microplasmas ignited at pressures ranging from 1 to 5 Torr. In spite of quantitative discrepancies, good overall agreement is obtained between the measured frequency response of impedance of the discharge. Comparisons are also presented for various plasma parameters including mean electron number density, sheath thickness, mean electron temperature, and collision frequency that were inferred from the impedance measurements. The computational model is then used to perform simulations of near-atmospheric pressure microplasmas with the probe signal frequency ranging from 3 to 20 GHz. The simulations demonstrate the presence of a resonance frequency at which the impedance vanishes. More importantly, it is shown that this resonant frequency can be tuned effectively by suitably modifying the operating parameters (gap size, pressure, and excitation voltage). The simulated impedance characteristics are used to determine the effective plasma inductance and capacitance using a non-linear fitting approach, thereby showing the dependence of these electrical parameters on the plasma operating conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Active Reduction of Apparent Cable Capacitance

This paper presents a method for reducing apparent cable capacitance seen by sensors. The proposed method is designed for sensing in extreme environments including ultra-high temperatures, but can be applied in benign environments as well. By reducing the cable capacitance, high speed signals can be transmitted over longer distances, allowing the application of advanced control systems that require high bandwidth data for stable operation. A triaxial cable with an associated guard circuit is developed that actively reduces cable capacitance while also rejecting extraneous electric and magnetic interference on the signal. The active capacitance reduction method developed is tested experimentally and shown to reduce apparent cable capacitance to two percent of the static value.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Railroad block/grade crossing warning system

A train safety system comprises a cable connected to at least two conducting contacts, an electrical load between said two conducting magnetic contacts, and a DC track circuit associated with railroad tracks wherein the at least two conducting plates can be connected to each of the railroad rails in order to shunt the DC track circuit and alert oncoming trains of fouling of the tracks or crossing ahead.

42 ENGINEERING↗
DOE OSTI2023

Magnetoelectric inverter

A magneto-electric (ME) inverter includes two anti-ferromagnetic spin orbit read (AFSOR) circuit elements, each AFSOR circuit element has a CMOS inverter; and an AFSOR device with a ME base layer; a semiconductor channel layer on the ME base layer and comprising a source terminal and a drain terminal, where the source terminal is coupled to an output of the CMOS inverter; and a gate electrode on the semiconductor channel layer. The gate electrode of a second AFSOR device of the two AFSOR circuit elements is coupled to the drain terminal of a first AFSOR device of the two AFSOR circuit elements.

Gaul, Nishtha Sharma↗
DOE OSTI2025

Addendum to SAND2023-09604 Xyce lumped-element transmission line model verification to support Empire-Cable cable SGEMP analyses

This report supplements the Verification of Empire-Cable SAND report by expanding on the use of Xyce to simulate the coupling to a transmission line cable model. While Empire-Cable solves its governing equations on a high-order, finite-element mesh with an an implicit-in-time formulation, Xyce must use a first order graph for the circuit and explicit-in-time approach to be compatible with non-linear electrical device models. Thus, given the different solution methodologies in Xyce as compared to Empire-Cable, the convergence rates are expected to be different but the overall quality of the solution should be the same. The original four canonical problems studied in the Empire-Cable verification report are replicated here running in Xyce using transmission line modeling parameters from the verification report. Overall, agreement between the codes is excellent with Xyce’s convergence rates being limited mostly to first order due to the circuit network approximation of a transmission line being a first order approximation.

42 ENGINEERING↗
DOE OSTI2023

Polarization-controlled volatile ferroelectric and capacitive switching in Sn 2 P 2 S 6

Abstract Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic- like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn 2 P 2 S 6 at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau–Ginzburg–Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls (DWs) decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, DW mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Integration of Ultrawide Bandgap Photoconducting Semiconductor Switches into High-Voltage, High-Current Pulser Systems

In this feasibility study we will evaluate the viability of integrating ultrawide bandgap (UWBG) photoconducting semiconductor switches (PCSS) in high-voltage pulser systems capable of driving low-impedance dynamic loads critical for next-generation accelerator and RF-source applications. The project consisted of developing modelling tools that would inform design of UWBG PCSS packages that could be mounted onto conventional circuit boards. Specifically, we are interested in evaluating the following through simulation software: (1) resistance to electrical breakdown (2) proximity effects due to high-frequency skin effect (3) transient behavior from switching (4) effective transmission of RF signals (5) thermal dynamics of the switch under operation (6) sensitivity to inhomogeneities in optical excitation of the material (7) cross-talk effects from parallel switching structures, and (8) susceptibility of system to damaged components. The project resulted in the development of a special-purpose circuit code that implements photoconductivity physics. This code was used to evaluate objectives 1-6 above, identifying a critical requirement associated with the need for fine control of dopant concentrations in the UWBG material to reach an optimal solution for voltage standoff and laser light responsivity requirements. In addition, we identified that the temperature dependence of the electrical conductivity of this material was typically not well-measured and developed a platform for measuring both the “dark” and “illuminated” conductivity on real physical switches in the lab to better inform our models.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Preconceptual Designs of Coupled Power Delivery between a 4-Loop PWR and 100-500 MWe HTSE Plants

This study develops a preconceptual design for the integration between a large-scale high-temperature electrolysis facility and a NPP. Two hydrogen facility sizes are considered: 100 MWnom and 500 MWnom. Both steam supply designs use cold reheat steam extraction as a heat source. A reboiler inside the protected area of the power plant transfers steam heat to the demineralized water supply for the hydrogen plant. After the heat transfer, the extracted steam condenses and returns to the condenser while the process steam routes out of the protected area to the electrolyzers. Electrical power is tapped off from the high voltage side of the GSU transformer, where it is then transported via a 345-kV transmission line to the hydrogen facility. Circuit breakers and disconnects are located at both ends of the transmission line. Step down transformers and miscellaneous switchgear/buses are located at the end of the transmission line inside the HTEF boundary. Control capabilities for the steam interfacing equipment and electrical dispatch are accessible from the Main Control Room, and protective relays for the transmission line are located inside the Relay Room. Computer modeling was performed for the thermal and electrical designs. PEPSE analysis provided the steady-state parameters for thermal extraction from the turbine cycle. These parameters were used to inform transients and size equipment in combination with Applied Flow Technology (AFT) Arrow and AFT Fathom modeling for steam and water piping, respectively. Electrical transients were analyzed using PSCAD. An ETAP model was used to evaluate power flow and short circuit, which enabled the sizing of transformers and protective equipment. A cost estimate was developed for both integration designs when considering plant separation distances of 250 m and 500 m. From these estimates, the modifications for thermal and electrical interfacing of a first-of-a-kind nuclear-integrated hydrogen facility are anticipated to cost between $60–250/kWnom., where the subscript “nom” refers to the nominal size of the hydrogen plant. On a thermal power basis, the thermal power has a cost of approximately $8/MWth for a 500 MWnom high temperature electrolysis plant located 500 m distant from the NPP. That value decreases to approximately $7.5/MWth for a 250 m separation distance between the hydrogen plant and the NPP. This value is lower than previous estimates of the cost of heat extracted from NPPs primarily because in this work the steam is extracted from cold reheat instead of the main steam line, which reduces the cost of the dispatched steam by approximately $3.5/MWth. Nuclear steam extraction can provide a profit avenue for many plants and is not restricted to hydrogen production. Ammonia production, oil refining, and paper production, among other industrial processes all require thermal energy, which can be provided by NPPs. Future work should look further at the details of thermal extraction for a variety of use cases. This can include increased levels of extraction and multiple simultaneous users. Additionally, site-specific studies should be performed to develop industry experience and improve cost accuracy.

08 HYDROGEN↗
DOE OSTI2020

Electrical meter probe contact verification system

A system and method verifies continuity with and measures voltage across a circuit under test (in some instances simultaneously) using two or more test probes. Two or more probe continuity circuits measure continuity through the test probes by injecting a test current through and measuring a processed test current received at each of the plurality of test probes. The probe continuity circuits measure the respective processed test current rendered by the test current flowing through the test circuit at each test probe. A voltmeter measures the potential difference across the test probes.

42 ENGINEERING↗
DOE OSTI2022

Universal topological quantum computation with strongly correlated Majorana edge modes

Abstract Majorana-based quantum gates are not complete for performing universal topological quantum computation while Fibonacci-based gates are difficult to be realized electronically and hardly coincide with the conventional quantum circuit models. In reference Hu and Kane (2018 Phys. Rev. Lett. 120 066801), it has been shown that a strongly correlated Majorana edge mode in a chiral topological superconductor can be decomposed into a Fibonacci anyon τ and a thermal operator anyon ɛ in the tricritical Ising model. The deconfinement of τ and ɛ via the interaction between the fermion modes yields the anyon collisions and gives the braiding of either τ or ɛ . With these braidings, the complete members of a set of universal gates, the Pauli gates, the Hadamard gate and extra phase gates for one-qubit as well as controlled-NOT (CNOT) gate for two-qubits, are topologically assembled. Encoding quantum information and reading out the computation results can be carried out through electric signals. With the sparse-dense mixed encodings, we set up the quantum circuit where the CNOT gate turns out to be a probabilistic gate and design the corresponding devices with thin films of the chiral topological superconductor. As an example of the universal topological quantum computing, we show the application to Shor’s integer factorization algorithm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Spatiotemporal dynamics of ionic reorganization near biological membrane interfaces

Electrical signals in excitable cells involve spatially localized ionic fluxes through ion channels and pumps on cellular lipid membranes. Common approaches to understand how these fluxes spread assume that the membrane and the surrounding electrolyte comprise an equivalent circuit of capacitors and resistors, which ignores the localized nature of transmembrane ion transport, the resulting ionic gradients and electric fields, and their spatiotemporal relaxation. Here, we consider a model of localized ion pumping across a lipid membrane, and use theory and simulation to investigate how the electrochemical signal propagates spatiotemporally in and out of plane along the membrane. The localized pumping generates long-ranged electric fields with three distinct scaling regimes along the membrane: a constant potential near-field region, an intermediate monopolar region, and a far-field dipolar region. Upon sustained pumping, the monopolar region expands radially in plane with a steady speed that is enhanced by the dielectric mismatch and the finite thickness of the lipid membrane. For unmyelinated lipid membranes in physiological settings, we find remarkably fast propagation speeds of ∼ 40 m / s , allowing faster ionic reorganization compared to bare diffusion. Together, our paper shows that transmembrane ionic fluxes induce transient long-ranged electric fields in electrolyte solutions, which may play hitherto unappreciated roles in biological signaling. Published by the American Physical Society 2025

Row, Hyeongjoo (ORCID:000000033623512X)↗
DOE OSTI2024

Mechanically activated and deactivated ion transport across nanopores with heterogeneous surface charge distributions

To mimic the intricate and adaptive functionalities of biological ion channels, electrohydrodynamic ion transport has been studied extensively, albeit mostly, across uniformly charged nanochannels. Here, we analyze the ion transport under coupled electric field and pressure across heterogeneously charged nanopores with oppositely charged sections on their lateral surface. We only consider such pores with symmetric hourglass-like and cylindrical shapes to focus on the effects of the non-uniform surface charge distribution. Finite-element simulations of a continuum model demonstrate that a pressure applied in either direction of the pore-axis equally suppresses or amplifies the ionic conductance, depending on the electric field polarity, by distorting the quasi-static distribution of ions in the pore. The resulting anomalous mechanical deactivation and activation of ionic current under opposite voltage biases exhibit the functional modularity of our setup, while their intensities are highly tunable, substantially greater than those of analogous behaviors in other nanochannels, and fundamentally correlated to ionic current rectification (ICR) in our pores. A detailed study of ICR subsequently reveals its counterintuitive non-monotonous variations, in the pores, with the magnitude of applied voltage and the pore length, that can help optimize their diode-like behavior. We further illustrate that while the hourglass-shaped nanopores yield the more efficient mechanical suppressors of ion transport, their cylindrical analogs are the superior rectifiers and mechanical amplifiers of ion conduction. Therefore, this article provides a blueprint for the strategic design of nanofluidic circuits to attain a robust, modular, and tunable control of ion transport under external electrical and mechanical stimuli.

Physics↗
DOE OSTI2024

Quantum limits of superconducting-photonic links and their extension to millimeter waves

Photonic addressing of superconducting circuits has been proposed to overcome wiring complexity and heat-load challenges. However, such superconducting-photonic links suffer from an efficiency-noise trade-off that limits scalability. This trade-off arises because increasing power conversion efficiency entails reducing optical power, which makes the converted signal susceptible to shot noise. We analyze this trade-off and find that the laser-driven qubit gate infidelity scales inversely with the number of photons used. While methods such as nonlinear detection or squeezed light could mitigate this effect, we consider generating higher-frequency electrical signals, such as millimeter waves (100 GHz), using laser light. At these higher frequencies, circuits have higher operating temperatures and cooling power budgets and alleviate constraints posed by the trade-off. Therefore, we demonstrate an optically driven cryogenic millimeter-wave source with a maximum power efficiency of 8 ×10 −5 that can generate a maximum of 0.7 μ⁢W of 80 GHz power, with a 1200-thermal-photon equivalent of added noise at 4K. Using this source, we perform frequency-domain spectroscopy of superconducting NbTiN resonators at 80–90 GHz. Our results show a promising approach to lessen the efficiency-noise constraints on superconducting-photonic links, while leveraging the benefits of photonic signal delivery. Further optimization of power efficiency and noise at high frequencies could make scalable photonic control of superconducting qubits viable at temperatures exceeding 1K.

Optoelectronics↗
DOE OSTI2021

Low-Cost Handle Study for Photovoltaics on Transfer Printed Virtual Substrates

This work expands upon previous research related to transfer printed virtual substrates: a technique for generating low-cost engineered substrates that is not based on wafer reuse. Here, silicon and sapphire are evaluated as candidate low-cost handle materials, validated by metal organic chemical vapor deposition regrowth of GaAs single-junction solar cells. Resulting devices are studied via materials and electrical characterization techniques, including concentration measurements that indicate GaAs//sapphire TPVS open-circuit voltage at >10 suns comparable with identical devices grown on a prime GaAs substrate.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2024

TTW (Transition to Wire Device) [SWR-25-02]

The Transition to Wire (TTW) hardware project is a method for connecting solar research samples with fragile interconnects to robust, weatherproof and consistent commercial connectors. The Transition to Wire device is a printed circuit board designed to facilitate the transition from tab ribbon or other unsecured electrical contacts on research samples to either wires or a connector. The four pin connector provides a kelvin (4 wire) connection at the solder pad where the sample connects.

McDanold, Byron↗