On the Recombination of High Energy Hadrons with Electrons
Explore the source record for details and available documents.
43 PARTICLE ACCELERATORS↗
SEARCH · Search NASA
Results for “ELECTRON RECOMBINATION”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Electron-ion and ion-ion recombination
Explore the source record for details and available documents.
Biondi, M. A.↗
Probing the Early Universe with the SZ Effect
The Cosmic Microwave Background Radiation (CMBR) which we observe today is relic radiation which last interacted with matter more than 10 billion years ago, when the expanding universe cooled to the point that free electrons and ionized nuclei recombined to form atoms. Prior to recombination, scattering between photons and free electrons was a very frequent occurrence, and the distance light could penetrate was small; afterwards, with free electrons out of circulation, the universe became largely transparent to light. Thus, the CMBR photons we observe today give us a clear view of the state of the early universe. Measured deviations in the intensity of the CMBR trace the small perturbations in the primordial matter density, which have been amplified by gravitational forces to form the magnificent, complex structures which comprise the present-day universe.
Joy, M. K.↗
Solution synthesis of two-dimensional zinc oxide (ZnO)/molybdenum disulfide (MoS 2 ) heterostructure through reactive templating for enhanced visible-light degradation of rhodamine B
Numerous inorganic materials have been identified as potential candidates for high-performance photocatalysts. However, their solar-to-energy conversion efficiencies still fail to meet commercial requirements. Here, the main hurdle is the rapid recombination of photoexcited electrons and holes in single-phase materials. A viable predicted approach to suppress charge recombination is coupling two materials to form a two-dimensional (2D) heterostructure that physically separates photoinduced electrons and holes in different layers. In this work, the heterostructure-based paradigm was tested and a scalable solution synthesis of epitaxial ZnO-MoS 2 heterostructure was developed. A 2D ZnO-MoS 2 heterostructure was synthesized under hydrothermal conditions by stabilizing intermediate Zn-hydroxide states on a functionalized MoS 2 surface. Detailed characterization showed the formation of multilayer heterostructure with MoS 2 flakes intercalated between large size ZnO plates. The performance of this heterostructure was evaluated using photocatalytic degradation of rhodamine B. A degradation efficiency of 70% was measured within 90 minutes of visible-light irradiation, almost doubling the efficiency of the corresponding single-phase materials or their physical mixtures.
2D heterostructure↗
Narrow Radiative Recombination Continua: A Signature of Ions Crossing the Contact Discontinuity of Astrophysical Shocks
X-rays from planetary nebulae (PNs) are believed to originate from a shock driven into the fast stellar wind (v ~ 1000 kilometers per second) as it collides with an earlier circumstellar slow wind (v ~ 10 kilometers per second). In theory, the shocked fast wind (hot hubble) and the ambient cold nebula can remain separated by magnetic fields along a surface referred to as the contact discontinuity (CD) that inhibits diffusion and heat conduction. The CD region is extremely difficult to probe directly owing to its small size and faint emission. This has largely left the study of CDs, stellar-shocks, and the associated micro-physics in the realm of theory. This paper presents spectroscopic evidence for ions from the hot bubble (kT approximately equal to 100 eV) crossing the CD and penetrating the cold nebular gas (kT approximately equal to 1 eV). Specifically, a narrow radiative recombination continuum (RRC) emission feature is identified in the high resolution X-ray spectrum of the PN BD+30degree3639 indicating bare C VII ions are recombining with cool electrons at kT(sub e) = 1.7 plus or minus 1.3 eV. An upper limit to the flux of the narrow RRC of H-like C VI is obtained as well. The RRCs are interpreted as due to C ions from the hot bubble of BD+30degree3639 crossing the CD into the cold nebula, where they ultimately recombine with its cool electrons. The RRC flux ratio of C VII to C VI constrains the temperature jump across the CD to deltakT greater than 80 eV, providing for the first time direct evidence for the stark temperature disparity between the two sides of an astrophysical CD, and constraining the role of magnetic fields and heat conduction accordingly. Two colliding-wind binaries are noted to have similar RRCs suggesting a temperature jump and CD crossing by ions may be common feature of stellar wind shocks.
Behar, Ehud↗
Recombination of NO/+/ in the mid-latitude trough and the polar ionization hole
The dissociative recombination of NO(+) with electrons is further examined using a sample of Atmosphere Explorer data from the midlatitude ionization trough. The electron temperature for this data sample covered a range of 2500 K, thus allowing an accurate determination of the temperature dependence of the rate coefficient. The results confirm earlier determinations which were made from a large data base, and the rate coefficient alpha is found to be inversely proportional to the electron temperature. The possibility of a neglected process in the NO(+) chemistry is investigated which, if it were included, might result in a smaller temperature dependence of alpha. Such a source would require a direct dependence on electron temperature. A possible candidate is associative recombination of energetic N(D-2) with O. The results confirm recent measurements which find that this process cannot be significant. The NO(+) chemistry is a very sensitive indicator of chemical equilibrium conditions. By using measurements of the relevant parameters made in the polar ionization hole it is found that horizontal drifts do not appear to be significant in this region.
Torr, M. R.↗
X-ray Spectra of the Fe-L Complex II: Atomic Data Constraints from the EBIT Experiment and X-Ray Grating Observations of Capella
The Hitomi results for the Perseus cluster have shown that accurate atomic models are essential to the success of X-ray spectroscopic missions and just as important as the store of knowledge on instrumental calibration and astrophysical modeling. Preparing the models requires a multifaceted approach, including theoretical calculations, laboratory measurements, and calibration using real observations. In a previous paper, we presented a calculation of the electron impact cross sections on the transitions forming the Fe-L complex. In the present work, we systematically tested the calculation against cross-sections of ions measured in an electron beam ion trap experiment. A two-dimensional analysis in the electron beam energies and X-ray photon energies was utilized to disentangle radiative channels following dielectronic recombination, direct electron-impact excitation, and resonant excitation processes in the experimental data. The data calibrated through laboratory measurements were further fed into a global modeling of the Chandra grating spectrum of Capella. We investigated and compared the fit quality, as well as the sensitivity of the derived physical parameters to the underlying atomic data and the astrophysical plasma modeling. We further list the potential areas of disagreement between the observations and the present calculations, which, in turn, calls for renewed efforts with regard to theoretical calculations and targeted laboratory measurements.
Liyi Gu↗
Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
36 MATERIALS SCIENCE↗
Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells
The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.
Li, S. S.↗
Repetitively pulsed nanosecond discharge plasma decay in propane–oxygen gas mixture in the presence of a heating electric field
Plasma decay in the afterglow of a repetitively pulsed nanosecond discharge in a stoichiometric propane–oxygen mixture was experimentally investigated when a weak heating DC electric field was applied and in its absence. The discharge was ignited at room gas temperature and a pressure of 1–2 Torr and was characterized by low specific energy inputs (<0.004 eV per molecule in one pulse). Using microwave interferometry, the temporal evolution of the electron density during plasma decay was studied, and the effective recombination coefficients were obtained from data processing. It was shown that the rate of plasma decay behaved in a non-monotonic manner with increasing degree of propane oxidation; at first the decay rate grew, then passed through a maximum, fell and saturated in the limit of a large (~2000) number of pulses. In this limit, the effect of the heating DC electric field on the plasma decay decreased with approaching chemical equilibrium. Numerical simulation of the observed effects was performed for low and high oxidation degrees of propane taking into account changes in the composition of positive ions in the plasma. Good agreement was obtained between measurements and calculations of the electron density during plasma decay in these cases. Here it was shown that the formation of cluster ions in the discharge afterglow plays a fundamental role. The plasma decay was controlled by electron recombination with hydrocarbon cluster ion at low oxidation degree of propane and with water cluster (hydrated) ions at high oxidation degree. A hypothesis was proposed to explain the observed nonmonotonic behavior of the plasma decay rate with an increase in the propane oxidation in the discharge, based on the formation of hydrated hydrocarbon ions C x H y + (H 2 O) k at moderate oxidation degrees.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes
First-principles calculations of defects and electron–phonon interactions play a critical role in the design and optimization of materials for electronic and optoelectronic devices. The late Audrius Alkauskas made seminal contributions to developing rigorous first-principles methodologies for the computation of defects and electron–phonon interactions, especially in the context of understanding the fundamental mechanisms of carrier recombination in semiconductors. Alkauskas was also a pioneer in the field of quantum defects, helping to build a first-principles understanding of the prototype nitrogen-vacancy center in diamond, as well as identifying novel defects. Here, we describe the important contributions made by Alkauskas and his collaborators and outline fruitful research directions that Alkauskas would have been keen to pursue. Audrius Alkauskas’ scientific achievements and insights highlighted in this article will inspire and guide future developments and advances in the field.
36 MATERIALS SCIENCE↗
Study of Inelastic Electron-molecule Collisions Progress Report No. 1, 21 Mar. - 30 Jun. 1966
Theory applied to calculating rate of dissociative nitrogen ion recombination in study of inelastic electron-molecule collisions
INELASTIC COLLISION↗
Experimental apparatus for photon/ion coincidence measurements of dielectronic recombination
An inclined beams apparatus for the measurement of absolute cross sections for dielectronic recombination between free electrons and singly or multiply charged ions is described. The collision products, a photon and a lower-charge-state ion, are detected in delayed coincidence. Measurements of dielectronic recombination in C(3+) are described to illustrate the use of the apparatus and techniques. Verification of the calibrations and operation of the apparatus is demonstrated through measurements of charge transfer and electron impact excitation.
Gardner, L. D.↗
Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron-beam-induced current and its derivative Determination of diffusion lengths in the low micron and submicron ranges
A systematic and quantitative analysis is carried out to investigate the effects of the shape (point, cube, Gaussian) and size of the generation volume, the surface recombination velocity, and the diffusion length on the electron-beam-induced current (EBIC) and its derivative (DEIC). Thick homogeneously doped samples exhibiting diffusion lengths in the low micron and submicron range are considered. The results are presented in computed EBIC curves as a function of scanning distance and of the ratio true diffusion length/effective diffusion length. Shown using these curves are: (1) a simple and yet rigorous method for the determination of the true diffusion length, taking into consideration all of the factors cited above, (2) a method for the rapid determination of the surface recombination velocity, (3) the condition under which the source shape becomes insignificant, and (4) a new value for the lower limit of the diffusion length which can be determined by the EBOC technique.
Luke, K. L.↗
Understanding Recombination Pathways of CdSeTe/CdTe Devices Using Temperature Dependence of Fill Factor
Understanding the temperature dependence of photovoltaic parameters is critical for identifying performance limiting mechanisms in CdTe-based solar cells. In this study, we investigate the temperature dependence of fill factor (FF(T)) in CdSeTe/CdTe solar cells using a combination of experimental current density-voltage (JV) measurements and numerical simulations. The measured FF(T) exhibits a nonlinear response with temperature, peaking at moderate temperature values (10–30°C). Through numerical modeling, we reveal that this peaking behavior in FF(T) arises when the dominant recombination mechanism transitions from bulk to interface with increasing temperature. This transition is primarily driven by low hole mobility (0.6–1.2 cm2/V·s), while electron mobility, interface recombination velocities, and carrier lifetime also contribute to the effect. Our findings demonstrate that FF(T) analysis is a promising diagnostic tool for distinguishing recombination pathways and guiding the optimization of thin-film CdTe solar cells under real-world conditions.
CdTe photovoltaics↗
Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy
Using electron emission spectroscopy, measurement and analysis were conducted on the energy distribution of vacuum emitted electrons from electrically driven InGaN/GaN green (peak wavelengths 𝜆 ≈ 515nm) light-emitting diodes (LEDs) with and without a prewell superlattice (SL). Here, we report on the detection of a high-energy upper valley at ∼ 1.7eV above the Γ valley from samples with no prewell SL. We propose that these upper valley electrons originate predominantly from trap-assisted Auger recombination (TAAR) in green LEDs, as the intensity of these peaks is found to have quadratic dependence on the carrier density 𝑛 [see Espenlaub et al., J. Appl. Phys. 126, 184502 (2019)]. The high-energy upper valley peak was not observed in the sample with a prewell SL which is attributed to gettering by the prewell SL of still unidentified impurities that act as TAAR centers.
carrier generation & recombination↗
Deep level defects and cation sublattice disorder in ZnGeN 2
The III-nitrides have revolutionized lighting technology and power electronics. Expanding the nitride semiconductor family to include the heterovalent ternary nitrides opens up new and exciting opportunities for device design that may help overcome some of the limitations of the binary nitrides as well as new applications. However, the more complex cation sublattice also gives rise to new complexities with both native and extrinsic defects, such as disorder on the cation sublattice. Here, depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy measurements of defect energy levels in ZnGeN 2 combined with transmission microscopy and crystal lattice diffraction reveal optical signatures of mid-gap states that can be associated with cation sublattice disorder. The energies of these characteristic optical signatures in ZnGeN 2 thin films grown by metal-organic chemical vapor deposition are in good agreement with energy levels predicted by density functional theory for specific thermodynamically stable native point defects. To test the dependence of these defect signatures on crystal atomic composition, we correlated spatially-resolved optical and atomic composition measurements using spatially resolved x-ray photoelectron spectroscopy with systematically varied growth conditions on the same ZnGeN 2 films. The resultant elemental maps versus defect spectral energies and intensities suggest that cation antisite complexes (Zn Ge -Ge Zn ) versus isolated native point defects form preferentially and introduce mid-gap states that dominate electron-hole pair recombination. Complexing of Zn Ge and Ge Zn antisites manifests as disorder in the cation sub-lattice and leads to the formation of wurtzitic ZnGeN 2 as indicated by transmission electron microscopy diffraction patterns and x-ray diffraction (XRD) reciprocal space maps. Furthermore, these findings emphasize the importance of growth conditions to control cation place exchange.
42 ENGINEERING↗
Intersubband Auger recombination and population inversion in quantum-well subbands
The intersubband-Auger-recombination time of electrons under population-inversion conditions in a single quantum well is calculated by taking into account momentum- and energy-conservation rules, and by employing Fermi-Dirac statistics. The screened matrix element of the electron-electron interaction and the overlap integral are calculated for an infinitely deep quantum well. The results are in a good agreement with published experimental data. As a major nonradiative process, the Auger recombination is related to threshold current of infrared lasers based on intersubband transitions in quantum-well structures. The realization of these devices and other limitations to achieving population inversion are discussed. In view of the results, development of these lasers for emission wavelengths corresponding to energies below the LO-phonon energy seems feasible.
Borenstain, S.↗