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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 253 records · Page 14

Preliminary results from the first satellite of a high-resolution germanium gamma-ray spectrometer: Backgrounds from electron bremsstrahlung and from electron-positron annihilation

Detailed data are presented on the bremsstrahlung backgrounds measured by a satellite-borne high resolution Ge(Li) gamma ray spectrometer. Two bremsstrahlung classes were discussed: (1) those arising from radiation belt electrons stopping in the vicinity of the spectrometer, and (2) bremsstrahlung produced by electrons precipitating into the earth's atmosphere.

Imhof, W. L.↗

Investigation of electron dynamics in the magnetosphere with electron beams injected from sounding rockets

This paper describes an empirical study of the basic mechanisms by which electrons precipitate from the geomagnetic field to produce 'auroral X rays' during periods of geomagnetic activity. The study was based on data obtained by the Echo satellites. Echo I, launched in 1970, injected 40 keV, 0.1 amp electron pulses at low latitude (L ? 2.6) and successfully measured the returning pulses from the conjugate region. Electric fields and multiple Coulomb scattering were studied. Echo II, launched in 1972 from high latitude (L ? 8) studied the interaction of the beams with background radiation and the detailed motion of the beams near the rocket. Evidence for a beam plasma instability was obtained. Echo III launched in April 1974, (L ? 5.5) detected a series of conjugate echoes during the presence of a strong convective field in the magnetosphere. It was shown that the electric field measurement in the ionosphere using the incoherent backscatter radar and detectors on the rocket was transferred to the equatorial plane as though field lines were equipotentials.

Winckler, J. R.↗

Study of electronic properties in proton- and electron-irradiated GaAlAs and GaAs solar cell materials

Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.

Li, S. S.↗

Electron, electron-bremsstrahlung and proton depth-dose data for space-shielding applications

A data set has been developed, consisting of depth-dose distributions for omni-directional electron and proton fluxes incident on aluminum shields. The principal new feature of this work is the accurate treatment, based on detailed Monte Carlo calculations, of the electron-produced bremsstrahlung component. Results covering the energy region of interest in space-shielding calculations have been obtained for the absorbed dose (a) as a function of depth in a semi-infinite medium, (b) at the edge of slab shields, and (c) at the center of a solid sphere. The dose to a thin tissue-equivalent detector was obtained as well as that in aluminum. Various results and comparisons with other work are given.

Seltzer, S. M.↗

A new semiclassical decoupling scheme for electronic transitions in molecular collisions - Application to vibrational-to-electronic energy transfer

A new semiclassical decoupling scheme (the trajectory-based decoupling scheme) is introduced in a computational study of vibrational-to-electronic energy transfer for a simple model system that simulates collinear atom-diatom collisions. The probability of energy transfer (P) is calculated quasiclassically using the new scheme as well as quantum mechanically as a function of the atomic electronic-energy separation (lambda), with overall good agreement between the two sets of results. Classical mechanics with the new decoupling scheme is found to be capable of predicting resonance behavior whereas an earlier decoupling scheme (the coordinate-based decoupling scheme) failed. Interference effects are not exhibited in P vs lambda results.

Lee, H.-W.↗

Effects of low energy proton, electron, and simultaneously combined proton and electron environments in silicon and GaAs solar cells

Degradation of silicon and GaAs solar cells due to exposures to low energy proton and electron environments and annealing data for these cells are discussed. Degradation of silicon cells in simultaneously combined electron and low energy proton environments and previous experimental work is summarized and evaluated. The deficiencies in current solar array damage prediction techniques indicated by these data and the relevance of these deficiencies to specific missions such as intermediate altitude orbits and orbital transfer vehicles using solar electric propulsion systems are considered.

Horne, W. E.↗

Electron-temperature dependence of dissociative recombination of electrons with CO/+/./CO/n-series ions

The dependence on electron temperature of the coefficients for electron recombination with molecular cluster ions of the carbon monoxide series, CO(+).(CO)n, is determined. A microwave discharge lasting approximately 0.1 msec was applied in 5-20 Torr neon containing a few tenths percent CO in an afterglow mass spectrometer apparatus, and the time histories of the various afterglow ions were measured. Expressions for the dependence of the recombination coefficients of the dimer and trimer ions CO(+).CO and CO(+).(CO)2 are obtained which are found to be significantly different from those previously obtained for hydronium and ammonium series polar cluster ions, but similar to those of simple diatomic ions.

Whitaker, M.↗

Investigations of electron helicity in optically active molecules using polarized beams of electrons and positrons

A positronium-formation experiment with a high sensitivity to a possible relation between the helicity of beta particles emitted in nuclear beta decay and the optical asymmetry of biological molecules is presented. The experiment is based on a mechanism in which the electrons in optically active molecules possess a helicity of less than 0.001, too weak to detect in radiolysis experiments, the sign of which depends on the chirality of the isomer. A helicity-dependent asymmetry is sought in the formation of the triplet ground state of positronium when a low-energy beam of polarized positrons of reversible helicity interacts with an optically active substance coating a channel electron multiplier. Asymmetries between positronium decays observed at positive and negative helicities for the same substance can thus be determined with a sensitivity of 0.0001, which represents a factor of 100 improvement over previous positronium experiments.

Gidley, D. W.↗

The effect of space charge fields due to finite length electron beams in the free-electron laser

The space charge electric field of a finite length electron beam in the free electron laser amplifier with a tapered wiggler is analyzed. In the free drift region between the accelerator and laser, expressions for the increase of energy spread due to the self field are presented. In the FEL interaction region, the general conditions on the importance of the self electric field in the equations of motion is obtained. A numerical example of the FEL experiment at 10.6 microns is given.

Tang, C.-M.↗

Measurements of electron attachment lineshapes and cross sections at ultralow electron energies for c-C6F10, c-C6F12, C8F16 and 1,1,2-C2Cl3F3

Electron attachment cross sections are reported in the electron energy range 0-160 meV and at energy resolutions of 4.5-7.5 meV (FWHM) for the molecules c-C6F10 (perfluorocyclohexene), c-C6F12 (perfluoro-1,2-dimethylcyclobutane), C8F16 (perfluoro-1,3-dimethylcyclohexane) and 1,1,2-C2Cl3F3 (1,1,2-trichlorotrifluoroethane). Use is made of the Kr photoionization technique, and measured attachment lineshapes are converted to cross sections by normalization through attachment rate constants. Comparisons are made with attachment cross sections derived from swarm-measured rate constants. Similar to previous results in eight other molecules, the present four molecules exhibit resolution-limited onsets at a threshold consistent with an s-wave attachment behavior and with a neutral-negative-ion curve crossing at zero energy.

Alajajian, S. H.↗

Measurements of electron attachment lineshapes and cross sections at ultra-low electron energies for CF2Cl2, c-C4F6, c-C4F8 and c-C7F14

Electron-attachment cross sections are reported in the electron energy range 0-160 meV, and at energy resolutions of 7.0 and 7.5 meV (FWHM), for the molecules CF2Cl2 (dichlorodifluoromethane), c-C4F6 (perfluorocyclobutene), c-C4F8 (perfluorocyclobutane), and c-C7F14 (perfluoromethylcyclohexane). Use is made of the Kr photoionization method. Measured attachment lineshapes are deconvoluted from the spectral slit function, and are converted to cross sections by normalization through thermal attachment-rate constants. Comparisons are made with attachment cross sections derived from several independent sets of swarm-measured rate constants, and with collisional ionization (high-Rydberg attachment) data.

Chutjian, A.↗

Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopy

A new technique for spectroscopic investigation of subsurface interface electronic structure has been developed. The method, ballistic-electron-emission microscopy (BEEM), is based on scanning tunneling microscopy. BEEM makes possible, for the first time, direct imaging of subsurface interface properties with nanometer spatial resolution. The first application of BEEM to subsurface Schottky-barrier interfaces is reported.

Kaiser, W. J.↗

Measurement of electron-attachment line shapes, cross sections, and rate constants in HI and DI at ultralow electron energies

Electron-attachment cross sections are reported in the electron energy range 0-150 MeV, at an energy resolution of 6.5 MeV (full width at half maximum) for the molecules HI and DI. Use is made of the Kr photoionization method to obtain cross sections for HI, and a signal intercomparison technique to obtain cross sections and the thermal-attachment rate constant for DI. Attachment properties of the two molecules are very similar. The ratio of attachment cross sections is discussed in terms of the reduced-mass dependence of the dissociation width and the survival probability, and in terms of spectroscopic thresholds and rotational populations for attachment at 300 K. Approximate potential-energy curves for the lowest states of the neutral molecule and negative ion are given.

Alajajian, S. H.↗

Electron acceleration at nearly perpendicular collisionless shocks. I - One-dimensional simulations without electron scale fluctuations

Under certain conditions electrons can be reflected and effectively energized at quasi-perpendicular shocks. This process is most prominent close to the point where the upstream magnetic field is tangent to the curved shock. A theoretical explanation of the underlying physical mechanism has been proposed which assumes conservation of magnetic moment and a static, simplified shock profile are performed. Test particle calculations of the electron reflection process in order to examine the results of the theoretical analysis without imposing these restrictive conditions. A one-dimensional hybrid simulation code generates the characteristic field variations across the shock. Special emphasis is placed on the spatial and temporal length scales involved in the mirroring process. The simulation results agree generally well with the predictions from adiabatic theory. The effects of the cross-shock potential and unsteadiness are quantified, and the influence of field fluctuations on the reflection process is discussed.

Krauss-Varban, D.↗

Electronic shift register memory based on molecular electron-transfer reactions

The design of a shift register memory at the molecular level is described in detail. The memory elements are based on a chain of electron-transfer molecules incorporated on a very large scale integrated (VLSI) substrate, and the information is shifted by photoinduced electron-transfer reactions. The design requirements for such a system are discussed, and several realistic strategies for synthesizing these systems are presented. The immediate advantage of such a hybrid molecular/VLSI device would arise from the possible information storage density. The prospect of considerable savings of energy per bit processed also exists. This molecular shift register memory element design solves the conceptual problems associated with integrating molecular size components with larger (micron) size features on a chip.

Hopfield, J. J.↗

Simulation studies of plasma waves in the electron foreshock - The generation of Langmuir waves by a gentle bump-on-tail electron distribution

Particle simulation experiments were used to study the basic physical ingredients needed for building a global model of foreshock wave phenomena. In particular, the generation of Langmuir waves by a gentle bump-on-tail electron distribution is analyzed. It is shown that, with appropriately designed simulations experiments, quasi-linear theory can be quantitatively verified for parameters corresponding to the electron foreshock.

Dum, C. T.↗

Chemistry of electronic ceramic materials. Proceedings of the International Conference on the Chemistry of Electronic Ceramic Materials

The conference was held at Jackson Hole, Wyoming from August 17 to 22, 1990, and in an attempt to maximize the development of this rapidly moving, multidisciplinary field, this conference brought together major national and international researchers to bridge the gap between those primarily interested in the pure chemistry of inorganic solids and those interested in the physical and electronic properties of ceramics. With the many major discoveries that have occurred over the last decade, one of the goals of this meeting was to evaluate the current understanding of the chemistry of electronic ceramic materials, and to assess the state of a field that has become one of the most important areas of advanced materials research. The topics covered include: crystal chemistry; dielectric ceramics; low temperature synthesis and characterization; solid state synthesis and characterization; surface chemistry; superconductors; theory and modeling.

Davies, P. K.↗